（ Transmission Electron Microscopy： TEM）穿透式電子顯微鏡

Advisor: Kuen-Hsien, Wu Student: Jyun-Li, Wu

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OutlineIntroduction

Principle

Application

Comparison

Conclusion

Reference

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Introduction

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Introduction

1924 Louis de Broglie

1926 Hans Busch

1931 Ernst Ruska

1939

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Principle規格：（ 1 ）電子源：熱陰極電子鎗（鎢絲或是 LaB6 燈絲）（ 2 ）最大加速電壓： 120KV（ 3 ）倍率：最低 50x ，最高 600,000x（ 4 ）傾斜角度：正負 30 度

圖片來源 : 南台科技大學

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Principle

Vacuum System ： To increase the mean free path of the electron gas interaction for the voltage difference between the cathode and the ground without generating an arc .

Electromagnetic Lens System ： A series of electromagnetic lenses and apertures are used to reduce the diameter of the source of electrons and to place a small, focused beam of electrons onto the specimen.

Sample Holder ： TEM specimen stage designs include airlocks to allow for insertion of the specimen holder into the vacuum with minimal increase in pressure in other areas of the microscope. 

Imaging System ： Imaging methods in TEM utilize the information contained in the electron waves exiting from the sample to form an image.

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Principle

 S ＝ 0.61λ/NA

  λ ＝ h / p

LaB6

圖片來源： http://www.hk-phy.org/atomic_world/tem/tem02_e.html

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Principle

圖片來源： http://www.hk-phy.org/atomic_world/tem/tem02_e.html

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Principle

Elastic Scattering

Inelastic scattering

Back-scattered Electron

圖片來源： http://www.microscopy.ethz.ch/elast.htm

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Analysis of material contain :

Application

Material morphology

Material defects

Chemical composition

Crystallographic structure

Extremely high resolution images

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Application

Epitaxy structure

Polycrystalline silicon

圖片來源： http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf

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Application

Bright field image

Dark field image

圖片來源： http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf

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Application

BFI of particle in Al-Cu alloy

DFI selected to show the particle seen on their side

DFI showing the conspicuous close to vertical particle

圖片來源： http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf

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ApplicationThree-dimensional image

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Application南台科技大學 -奈米科技研究中心： JEOL JEM-  1230穿透式電子顯微鏡  (120 kV TEM)TEM影像分析1000元 /小時 學校單位

1500元 /小時 研究單位

2000元 /小時 營利事業單位

成功大學 -微奈米科技研究中心 ：高解析場發射掃描穿透式電子顯微鏡(High-Resolution Transmission Electron Microscopy ; HR-TEM)680自行操作 /小時  1800 代工學界 /小時 

3600 代工業界 /小時 

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Comparison

SEM : 1. Samples must be conductive.2. Samples can not be a powder or a

volatile items.3. The scattered electrons in SEM are

backscattered or secondary electrons.4. SEM has only 0.4 nanometers.

TEM : 1. Samples must be conductive.2. TEM sample need to prepare for thickness.3. Using elastic scattering and inelastic scattering

for image. 4. The resolution of TEM is 0.5 angstroms.5. Specimen size must be under 3mm.

圖片來源： http://highscope.ch.ntu.edu.tw/wordpress/?p=1599

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Because of TEM analysis would be broken the sample, so we should consider what formation we can obtain in TEM, but TEM can provide high resolution better than SEM.

Both SEM and TEM are two types of electron microscopes and are tools to view and examine small samples. 

Conclusion

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http://investor.fei.com/http://highscope.ch.ntu.edu.tw/wordpress/?p=1

599http://www.hk-phy.org/atomic_world/tem/tem02

_c.htmlhttp://news.gamme.com.tw/388598http://en.wikipedia.org/wiki/Transmission_electr

on_microscopyhttp://homepage.ntu.edu.tw/~ntuipse/TEM.htmhttp://www.microscopy.ethz.ch/elast.htmhttp://www.differencebetween.net/science/differ

ence-between-tem-and-sem/

Reference

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Thanks for your attention