-
2007
1
-
20072
1.
2.
-
20073
(.DC) (.DC & .TRAN)
, - -
/ , (.AC) (.NOISE) (.OP) Slew rate (.TRAN)
-
20074
Degeneration
degeneration
-
20075
ac
drain
. - gate-drain . .
( reactive )
-
20076
BJT
Cin
out
C
Cm
in
out
C
Cout
min
C
A
t
Cm
Rrr
ii
RrRrg
vv
RrRrR
grR
IVr
VIg
+=+=+===
==
0
00
0
0
0
00
0
,,, ( Rs )
-
20077
:
Ibias = Ieo e(Vin -Vout )/UT
Vout = -UT ln(Ibias/Ieo) + Vin
Vout = Vin
Ibias = Ibias e(Vin -Vout )/UT 100A
Vdd
GND
Vout
Vin
-
20078
(2)
:
10nA
Vdd
GND
Vout
VinIbias = Io e
Vin/UT e-Vout/UT
Vout = UT ln(Ibias/Io) + Vin
Vout = VinIbias = Ibias e
Vin/UT e-Vout/UT
Id = Ibias eVout/VA = Io e
Vin/UT e-Vout/UT
Vout = UT ln(Ibias/Io) + ( // (VA/UT))Vin
-
20079
BJT
, Rin,
, Rout, , vout/vin, , iout/iin
. 0=100, VA=100V, Is=10fA.
-
200710
( Rs )
-
200711
CE ( )
( Rs )
-
200712
MOS CS (common source)
-
200713
MOS CG (common gate)
rds
-
200714
Rin, Rout vout/vin CG
rds. KN=110A/V2, VT=0.7V, N=0.04V-1,
W/L=10m/1m, ID=200A RD.
-
200715
MOS CD (common drain- )
rds
-
200716
degeneration /
Degeneration
-
200717
degeneration /
Degeneration
-
200718
Degeneration (1/2)
+
- gm
GND
Vout
Vin
GND
Vout
Vin
-
200719
Degeneration (2/2)
VA Q1 :
GND
Vout
Vin
GND
Vout
V1
Q1
II = Ieo e
V1 /UT = Ieo e(Vin - V1 + Vout/Av )/UT
2 V1 = Vin + Vout / Av
I = Ieo e(Vin + Vout/Av )/(2 UT)
( MOSFET)
-
200720
- CE
/ :
Ibias
Vdd
GND
Vin
Ibias = Ico eVin/UT eVout /VA
Vout = -VA ln(Ibias/Ico) + ( VA / UT) Vin
-
200721
CD (1/2)
= 0
100pA
Vdd
GND
Vout
Vin
Ibias
Vout = ( VA / UT) Vin
Ibias = Ibias eVin/UT eVout/VA
-
200722
CD (2/2)
Vb
Vdd
GND
Vout
M6
M7VinVout = ( (VAn // VAp) UT) Vin
Id = Ibias e-Vout/VAp
= Ibias eVin/UT eVout/VAn
-
200723
CD
V1
GND
Ibias
Vdd
GND
Vout
Mb
M6
M7
-
200724
CE/CS
-
200725
DIBL FET
-
200726
- CB
/ (- )
:
Ibias = Ico e (Vb -Vin )/UT eVout /VA
Vout = -VA ln(Ibias/Ico) + (VA / UT) Vin (VA / UT) Vb
Gain = VA / UT = Av
100A
Vdd
Vin
Vb
-
200727
- CG
subthresholdMOSFET :
.
Ibias = Io e (Vb -Vin )/UT eVout /VA
Vout = -VA ln(Ibias/Io) + (VA / UT) Vin ( VA / UT) Vb
Gain = VA / UT = Av
100pA
Vdd
Vout
Ibias
Vin
Vb
-
200728
-
200729
CMOS
-
200730
Subthreshold MOSFETs
0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.910
-11
10-10
10-9
10-8
10-7
10-6
Gate voltage (V)
D
r
a
i
n
c
u
r
r
e
n
t
(
A
)
= 0.58680 Io = 1.2104fA
G
S
D
nFET
G
S
D
B
pFET
-
200731
/ MOS
( )
( )1 //)(0
///0
TdsTSG
TDTSTG
uVuVV
uVuVuVDS
eeI
eeeII
=
=
( ) ( )( )eeII uVVuVV TdgTSg = //0
( ) ( )( )1 //0 TSdTSg uVVuVV eeI =
/)(0
TSG uVVeI =
4 Tds UV >
-
200732
-
200733
/
Rout10A
Iout
Id = Id(sat) (1 + (Vd/VA) )
Id = Id(sat) eVd/VA
Ic = Ic(sat) (1 + (Vc/VA) )
Ic = Ic(sat) eVc/VA
Early ( )
-
200734
-
GND
Iin
GND
Iout
ViC
C (dVi/dt) = Iin - Ico exp(Vi/UT)
Iout = Ico exp(Vi/UT)
(C / Iout) (d Iout /dt) = Iin - Iout
C (d Iout /dt) = Iout( Iin - Iout )
-
200735
2
-
200736
MOS
GND
10A
Vdd
GND
Vout
Vin
500A
Vdd
100pA
Vdd
Vout
Vin
GND
Vout
Vin
Subthreshold MOS Above threshold MOS Subthreshold MOS
-
200737
MOS above threshold
I = (K/2k) ( (k(Vg - VT) - Vs)2 - (k(Vg - VT ) - Vd) 2 )
: Qd = 0
I = (K/2) ( ((Vg - VT) - Vs)2
AN k = 1 ( back-gate ):
I = (K/2) ( 2(Vgs - VT) Vds - Vds2 )
-
200738
Gummel
0.1 0.2 0.3 0.4 0.5 0.6 0.710
-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
Base-Emitter Voltage (V)
C
u
r
r
e
n
t
s
Ic: n=1, Is = 5.52fA
Ib: n=1.019, Is = 0.048fA
-
200739
gm ror
BJT
Above VTMOSFET
Av
(UT ) / I I / UT
I / UT
2I /(V1-V2 -VT)
VA / I
VA / I
VA / I
VA / UT
VA / UT
2VA/(V1-V2 -VT)
gmV ro
V3
V2V2
r
V1 +
V
-
V3
V2
V1
V3
V2
V1I I
-
200740
Vdd
GND
R1
Vout
Vin
10A
Vdd
GND
Vout
Vin
Vb
Vdd
GND
Vout
Vin
chip
-
200741
MOS
-
200742
BJT
( )
C
eo
oo
BEBi
E
E
CRf
rrrr
rrR
RrRrRRrRr
rRA
12
))(1()(
)]1)(||([||
1)1)(||(
)1)(||(
0
0
0
=
=++=++=
+++=
beEC
oo
Bi
e
CCoC
CrRCRf
rRrRR
rRR
rrR
rA
)(112
||
)||(
++===
==
beEC
eo
eEBi
E
C
eE
C
CrRCRf
rRrRRRRR
rRRA
)(112
)]([||
2
1
11
++==
+=+=
)
-
200743
BJT
MOS
-
200744
BJT (2)BJT CE ( )MOS CS (common source) MOS CG (common gate) MOS
CD (common drain- ) degeneration / degeneration /Degeneration
(1/2)Degeneration (2/2) - CE CD (1/2) CD (2/2) CDCE/CS - CB - CG
CMOS Subthreshold MOSFETs / MOS / - MOS MOS above threshold Gummel
MOSBJT
