2016 年奈米技術與材料研討會 - nano.dyu.edu.twnano.dyu.edu.tw/2016abstract/2016nano.pdf · 黃名以、李明儒、顏光逸、楊名展、聖瑋、黃郁晟、陳柏維

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2016 年奈米技術與材料研討會

Nanometer-Scale Technology and Materials

Symposium 2016

會議手冊

2016 年 11 月 18 日

NTMS 2016

2016

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Nanometer-Scale Technology and Materials Symposium 2016

為促進奈米尺度技術與奈米尺度材料相關領域之研究與學術交流並協助人

才之培育自 2005 年起大葉大學每年舉辦本研討會藉由相關研究之發表與討

論分享更加充實與增進彼此的知識

舉辦時間2016 年 11 月 18 日（周五）

舉辦地點大葉大學工學大樓六樓會議廳 H613 室

主辦單位大葉大學材料科學與工程學系電機工程學系

指導單位行政院科技部

議程主席范榮權

籌備委員李得勝陳昭翰范榮權宋皇輝李世鴻姚品全

李弘彬連水養李義剛廖芳俊賴峰民王偉凱

大會邀請演講

游志文教授（大葉大學分子生物科技學系）

Plant biotechnologyndashfrom basic research to industrial applications

吳憲昌教授（國立彰化師範大學物理學系）

Shape-controlled nanopores using a low intensity electron beam and its applications

游智勝教授（財團法人國家實驗研究院儀器科技研究中心生醫平台

與育成組）

新竹生醫園區及國研醫材創價聯盟

曾耀霆教授（國立屏東大學應用物理系）

UpConversion NanoParticles (UCNPs) and Its Applications

工作團隊曾偉毓劉子豪林宜憲王楨傑吳承諺李宗哲蔡育哲

黃名以李明儒顏光逸楊名展江聖瑋黃郁晟陳柏維何信威

聯絡人

范榮權教授

51591 彰化縣大村鄉學府路 168 號

大葉大學電機工程學系材料科學與工程學系

電話(04) 851-1888 轉 2178 傳真(04) 851-1280

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目錄

研討會議程helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip05

邀請演講摘要helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip07

論文宣讀摘要helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip12

壁報論文摘要helliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphelliphellip20

4

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研討會議程時間內容

0900 ～ 0920 報到張貼壁報展示

0920 ～ 0930 開幕致詞

0930 ～ 1020

邀請演講游志文教授

大葉大學分子生物科技學系

Plant biotechnologyndashfrom basic research to

industrial applications

1020 ～ 1030 休息

1030 ～ 1120

邀請演講吳憲昌教授

國立彰化師範大學物理學系

Shape-controlled nanopores using a low intensity

electron beam and its applications

1130 ～ 1210

邀請演講游智勝教授

財團法人國家實驗研究院儀器科技研究中心生醫平台與育成組


1210 ～ 1340 午餐壁報展示

1340 ～ 1430

邀請演講曾耀霆教授

國立屏東大學應用物理系

UpConversion NanoParticles (UCNPs) and Its

Applications

1430 ～ 1500 休息壁報展示

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1500 ～ 1515

以氧化鋅薄膜製作場效電晶體之研究

大葉大學醫療器材設計與材料碩士學位學程

任泰欣

1515 ～ 1530 BiVO4 摻雜銀離子提升在可見光下之光催化效能探討

國立彰化師範大學

黃建愷

1530 ～ 1545

抑制劑對鎂鋰合金(LZ91)金屬奈米空氣電池電催化性能之研析

大葉大學醫療器材設計與材料學士學位學程

李佳諭劉桂萍

1545 ～ 1600

藉由 SLS 機制由基板直接成長鍺奈米線

大葉大學電機工程學系

黃名以

1600~1625 閉幕

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植物生物技術ndash由基礎研究至產業應用大葉大學分子生物科技學系

游志文

摘要

生物科技於近年迅速崛起可廣泛運用於醫藥產業農林漁牧業食品產業特

化產業能源產業及污染防治等領域其中「植物生物技術」是以植物為研究對

象利用植物的增殖基因調控基因轉殖等方式以達到改變植物特性提高

作物逆境抗性增加作物產能等目的本次內容將以「植物生物技術」提高作物

寒害耐受能力為例介紹由植物寒害研究至產業應用與商品化之過程已知遺傳

上任何植物自身即攜帶有各式抗寒基因與抗寒機制但生長於熱帶或亞熱帶地區

之植物抗寒基因之啟動常較為鈍化緩慢常不及應變外在環境突發性溫度變

化容易遭受寒溫損傷溫帶與寒帶植物則有較為迅速與強烈之反應低溫耐受

性因而較佳當前研究結果顯示H2O2為植物細胞中的逆境共同訊號傳遞分子

以H2O2處理植物可以活化植物自身抗逆境機制迅速提高作物對於寒害的耐受能

力同時也提高植物對於乾旱高鹽溫度真菌等逆境的抗性以菸草為模式

植物轉殖以外源性葡萄糖氧化酶基因藉此提高細胞中過氧化氫含量也可達

成提高環境逆境耐受能力之效果本次內容除植物寒害防治外也同時介紹目前

「植物生物技術」對於農作物病害防治作物營養價值提高藥用蛋白生產等產

業運用之進展與現況

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Cen-Shawn Wu1

Chien-Han Chen2 Xuyan Chang

1 Jun Wei Huang

2 and Rui-Zhi Su

1

1 Department of Physics National Changhua University of Education Changhua 500

Taiwan

2 Graduate Institute of Photonics National Changhua University of Education Changhua 500

Taiwan

Abstract

Solid-state nanopores have attracted considerable attention in recent years due to

their promising applications in next-generation nanosensors for rapid electrical

detection and characterization of biomolecules However key to detect and

characterize DNA and biomolecules with single-molecule resolution is not only the

nanopore size but also the corresponding three-dimensional (3D) nanopore sidewall

shape The shape of sidewall is an important issue in the analysis of DNA

translocation through nanopore Here we demonstrated by using a low-intensity

electron beam to make nanoscale pores this technique is possible to control the 3D

shape of nanopore in the Si3N4 membranes In addition the electron tomography is a

powerful technique for characterizing nanoscale structures in three dimensions

Individual projection images of the tilt series are aligned with cross-correlation the

tomographic reconstruction is calculated by weighted back-projection These images

are used to investigate the dynamics of nanopore formation mechanism Furthermore

we introduce a novel fabrication technique to form metallic quantum dots devices

This device consists of a small disc sandwiched between top and bottom metallic

contacts The measurement result shows that the device is possible to resolve

well-defined electronic states as quantum dots behavior

Keywords nanopore low-intensity electron beam electron tomography Quantum dot

L2

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游智勝


摘要

「國研醫材創價聯盟」是一個全新的聯盟概念目標在連結醫療器材從創意

到產品的過程中所需要的各項驗證服務引領發明者找到上市的最短路徑加

速價值的呈現國研醫材創價聯盟成員包含科技部經濟部衛福部與農委會所

屬單位為全國最完整的跨部會支援體系並延伸串接醫材價值鏈上下游服務平

台一舉囊括創意能量累積產品規格制定臨床前試驗臨床試驗與產品上市

等醫材開發關鍵階段所需能量透過產官學研各界攜手合作國研醫材創價聯盟

協助醫材諮詢輔導安全及效能驗證資金輔導服務一次到位

L3

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Applications

曾耀霆


摘要

稀土元素特殊的電子構型具有未填滿的4f 電子殼層4f 電子層之間的躍

遷可以發光和產生雷射頻譜範圍含括紫外光可見光到紅外光可觀察到的譜

線有 3000 條使其具有優異的光學特性可製作成上轉換功能性材料

（Upconversion Functional Materials）及運用至生醫相關之感測器等稀土

元素因而在發光材料領域有著巨大的應用前景由於上轉換發光材料可以受近紅

外光（NIR）激發而發射出可見光的特性近幾十年來發展出廣泛可能的應用

另一方面隨著奈米晶體研究的發展上轉換發光奈米晶體製備亦備受關注因

為由近紅外光激發的核-殼上轉換奈米晶體可以大幅度地避免生物組織的背景螢

光減小了對生物組織的傷害提高了靈敏度並且具有毒性低穿透力強的特

點故在生物醫學領域具有相當的前景及應用潛力

L4

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以氧化鋅薄膜製作場效電晶體之研究宋皇輝 1

任泰欣 2

1大葉大學材料科學及工程學系

彰化縣大村鄉學府路 168號 2大葉大學醫療器材設計與材料碩士學位學程

彰化縣大村鄉學府路 168號

摘要

本研究以 ZnO 和 Ag 製作蕭特基場效電晶體(field effect transistor FET)第

一階段的實驗以工作氣體氬氣透過射頻濺鍍磊晶成長 ZnO 薄膜於 Eagle2000reg

玻璃基板上薄膜成長於室溫製備 n-type ZnO 薄膜做為場效電晶體的電子通道

(n channel FET)透過粉末 X 光繞射儀(XRD)分析 ZnO 薄膜晶格方向ZnO 薄膜

沿 c 軸(002)方向成長以 SEM 觀察薄膜表面形態由 SEM 觀察到其表面呈現

丘峰狀以霍爾量測系統測量薄膜之電阻率載子濃度及載子遷移率等特性

在第二階段的實驗中使用黃光製程製作電極將光阻以選轉塗佈鍍於 ZnO

表面以 HCl 將部分不需要的 ZnO 去除再使用蒸鍍於 ZnO 薄膜表面特定區域

鍍上 Ag作為蕭特基閘極並提供此場效電晶體電流源及電壓輸出源連接 ZnO

作為源極和汲極而製成金屬半導體場效電晶體透過 IV 測量分析作場效電

晶體之電導特性

關鍵字磁控射頻濺鍍場效電晶體氧化鋅薄膜霍爾量測電阻率載子濃

度

O71

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Fabrication and Characterization of Zinc Oxide

Metal-Semiconductor Field-Effect Transistors

Fabricated Huang-Huei Sung

1 Tai-XinRen

2

1Department of Materials Science and Engineering Da-Yeh University Dacun

Changhua 51591 Taiwan 2Master Program for Design and Materials for Medical Equipment and Devices

Da-Yeh University Dacun Changhua 51591 Taiwan

Abstract

This research is to study the ZnO metal-semiconductor field effect transistor

(MEFET) with an Ag gate The ZnO films which are the electronic channel of the

FET were deposited on Eagle2000reg substrates using a rf magnetron sputtering

system with working gas argon The crystallinity of the ZnO thin film was examined

by XRD and the surface morphology of ZnO thin films were studied by SEM XRD

spectra showed that the films are epitaxy and the c-axis is perpendicular to the film

surface In addition the hexagonal morphology could also be observed in the SEM

images The resistivity and carrier concentration are measured by a Hall effect facility

The electrodes on ZnO films are patterned by the standard photolithography followed

by the wet etching Then the Ag gate film was deposited by thermal evaporation

method and was patterned by lift-off process After completing the MEFET device

the current versus voltage (I-V) characteristics of the gate Schottky contacts are

measured The results shown a rectification behavior with leak currents

KeywordsRF magnetron sputtering field effect transistors the zinc oxide film Hall

effect resistivity carrier concentration

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BiVO4 摻雜銀離子提升

在可見光下之光催化效能探討黃建愷

1 林泱蔚

1

1國立彰化師範大學

摘要利用水熱合成法(180 24小時)製備出單斜晶系BiVO4利用可見光還原法還

原出Ag奈米粒子藉此合成出AgBiVO4由粉末式X射線繞射儀(XRD) 掃描及穿

透式電子顯微鏡(SEM and TEM)及紫外光-可見光漫反射光譜儀(UV-DRS)鑑定

本研究材料之結構型態及表面特徵結果顯示AgNO3與BiVO4重量百分比及可

見光之照射時間對於本研究材料之型態及光催化活性有很大的影響利用亞甲

基藍(MB)在可見光照射下(gt420 nm)對本研究材料進行光催化活性實驗因

為AgBiVO4存在著異質界面使AgBiVO4相對於BiVO4及P25有較好的光催化活

性另外我們發現BiVO4在AgNO3水溶液中(BiVO4Ag+)能夠有效的增強其光催化

活性(30分鐘可以降解99 的MB)我們提出了Z-scheme的光催化機制解釋

在可見光下的光催化增強機制此外也將AgBiVO4應用在光催化滅菌及利用

BiVO4螢光分析的方式檢測水中的Ag+濃度

關鍵詞BiVO4 Ag 水溶液 AgBiVO4 可見光 O2 釋放光催化滅菌汙染物

降解

O101

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Effect of doping silver ions on BiVO4 in enhancing

photocatalytic performance under visible light

Chien-Kai Huang1 and Yang-Wei Lin

1

1 Department of Chemistry National Changhua University of Education Changhua

City Taiwan

Abstract

Monoclinic BiVO4 products were synthesized via a hydrothermal process used as a

template for the fabrication of Ag nanoparticle-doped BiVO4 (AgBiVO4) composite

products through a visible light reduction process The structures morphologies and

optical properties of the as-prepared products were characterized by X-ray powder

diffraction scanning electron microscopy transmission electron microscope

energy-dispersive X-ray spectroscopy and UVndashVis diffuse reflectance spectroscopy

Results showed the mass ratio of AgNO3 to BiVO4 and the illumination time of

visible light have great effect on the morphologies and optical properties of the

products The photocatalytic activities of the prepared products were examined by

studying the degradation of methylene blue (MB) solutions under visible light

irradiation (gt 420 nm) The results show clearly that the AgBiVO4 possess a higher

photocatalytic activity than pure BiVO4 and P25 due to its AgBiVO4 interfaces

Interestingly obviously enhancing photocatalytic activity (gt99 degradation within

30 min) was found on BiVO4 in aqueous AgNO3 solution (BiVO4Ag+) We

proposed a possible Z-scheme photocatalytic mechanism to understand the enhanced

photochemical properties In addition We use the AgBiVO4 application on

photocatalytic disinfection and the BiVO4 products possess potential of detecting Ag+

ions concentration in water by fluorescence analyses

Keywords BiVO4 AgNO3 solution AgBiVO4 visible light O2 evolution

pollutant degradation

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抑制劑對鎂鋰合金(LZ91)

金屬奈米空氣電池電催化性能之研析

李佳諭 1 劉桂萍 1

1大葉大學醫療器材設計與材料學士學位學程

彰化縣大村鄉學府路 168 號

摘要

本實驗研究主要在於鎂鋰合金金屬燃料電池結構製作及催化層之至備提升電池

的性能陽極採用鎂合金LZ91陰極中的空氣層採用26nm奈米碳球與PTFE為提

供良好的氣體透氣性及導電度以過錳酸鉀與奈米碳球混合用直接迴流法合成

奈米MnO2當催化劑至備2M的二氧化錳催化劑在電解溶液主要以35wt鹽水

為主分別添加01M之硫酸磷酸醋酸次氯酸鈉探討不同酸類的電解液之

腐蝕極化曲線及空氣電池全放電測試由腐蝕極化曲線可知再 35wt

NaCl+01MH2SO4之後有最佳的放電效果在電解液中添加氫抑制劑以降低過

電勢和自腐蝕性減小自腐蝕速度提高鎂合金陽極利用率加入微量聚乙二醇

600十六烷基三甲基溴化銨來探討不同濃度脂抑制劑所產生的緩蝕效果

關鍵詞鎂鋰合金抑制劑二氧化錳

O102

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以藉由 SLS 機制由基板直接成長鍺奈米線

李世鴻黃名以陳木松范榮權

大葉大學電機工程學系彰化縣大村鄉學府路 168 號

摘要

在本研究中藉由固相液相固相(SLS)機制在550ordmC-650ordmC溫度範圍中在鍍金的(100)鍺基板上成長鍺奈米線(GeNW)鍺奈米線是在一大氣壓的氬氣氛圍下以一種自我組合的方式來成長的甚且在鍺奈米線成長過程中並不需要提供諸如鍺烷等氣體我們以場發射掃描式電子顯微鏡(FESEM)來觀察鍺奈米線的表面形貌我們以穿透式電子顯微鏡(TEM)來分析鍺奈米線的直徑厚度與結構並能量散射頻譜(EDS)來決定鍺奈米線的化學成分鍺奈米線的成長對於成長溫度是非常敏感的而且只有在非常有限溫度範圍(575ordmC-625ordmC)中才有可能具有良好表面形貌鍺奈米線這些長薄直的鍺奈米線具有很高的高寬比而且是被一層氧化物層所包覆這層氧化物的成分為GeOx 其中xlt2隨著金膜的厚度由9 nm降至1 nm時所成長鍺奈米線的直徑則會由1193 nm下降至385 nm我們的實驗結果顯示可以藉由改變金膜的厚度來控制所成長鍺奈米線的直徑關鍵詞鍺奈米線固相液相固相(SLS)機制

O103

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Direct Growth of Germanium Nanowires

by a SLS Mechanism

Shih-Fong Lee Ming-Yi Huang Mu-Song Chen and Jung-Chuan Fan

Department of Electrical Engineering Da-Yeh UniversityChanghua 51591 Taiwan

Abstract

In this study germanium nanowires (GeNWs) were grown directly from a

Au-deposited germanium (100) substrates by a solid-liquid-solid (SLS) mechanism in

the temperature range 550ordmC-650ordmC The GeNWs are grown by a self-assembly way

on the Au-coated germanium substrate at the atmospheric pressure of Ar ambience

Furthermore additional feedstock gas such as GeH4 is not needed during the

growth of GeNWs The surface morphology of GeNWs was characterized with

field-emission scanning electron microscope (FESEM) The diameter thickness and

structure of GeNWs were analyzed with transmission electron microscopy (TEM) and

the chemical compositions of GeNWs were determined by energy-dispersive

spectroscopy (EDS) The growth of GeNWs is very sensitive to the growth

temperature and GeNWs with excellent morphology and high surface density can be

successfully grown only over a limited temperature range (575ordmC-625ordmC) These long

thin and straight GeNWs have a high aspect ratio and are surrounded by an oxide

layer The composition of corresponding oxide layers is GeOx (xlt2) As the thickness

of Au film is decreased from 9 nm to 1 nm the average diameter of GeNWs

decreases from 1193 nm to 385 nm Our experimental results demonstrate that the

diameter of germanium nanowires can be controlled by the thickness of Au catalytic

film Key words germanium nanowires solid-liquid-solid

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領域

1 掃描探針顯微術

2 奈米元件製程與檢測

3 奈米生物技術

4 奈米生醫材料

5 奈米碳管

6 奈米粉末

7 奈米尺度光電磁材料與元件

8 奈米機電系統

9 奈米科學教育

10 其他奈米尺度技術與材料

22

壁報論文摘要編號

P21

Studies of Nanoscale Films Grown on GaAs in Etches

P22

綠色合成法製備雞蛋白螢光金奈米團簇及檢測環境水樣中的汞離子

P23

THE OPTICAL ABSORPTION OF SUB-BANDGAP IN HYDROGENATED

AMORPHOUS SILICON

P41

還原態氧化石墨烯的表面分析及其抗菌特性之研究

P42

仿生法沉積氫氧基磷灰石二氧化鈦複合薄膜界面形貌之操控與抑菌性評估

P51

低維半導體在奈米碳管中的電子傳輸和光學性能

P61

以溶膠-凝膠法合成 B 摻雜 ZnO 和其性質研究

P62

以溶膠-凝膠法合成 Mn 摻雜介孔 SnO2 及其性質研究

P63

以溶膠-凝膠法製備摻雜鈦介孔二氧化鈰及其特性研究

P64

驟冷式化學氣相合成反應器中奈米氧化鋅的連續可控製備

P71

摻釔氧化鋅薄膜之特性分析

P72

銅-鈷共摻雜氧化鋅薄膜之稀磁性特性分析

P73

石墨烯的添加對鎳基超合金銲件之顯微組織和機械性質研究

P74

金屬覆層對氧化鋅薄膜光電導影響之研究

P75

氧化鋅摻雜鉺的製備與特性分析

P76

利用電泳沉積法製備白金及石墨稀對應電極與其電性探討

23

P77

CoXFe3-XO4 塊材的物理性質研究

P78

Bi-Fe-O 不同比例塊材的物理性質研究

P79

低微度系統中半導體的磁阻

P91

The Study of E-Learning - Nanomaterials Science

P92

Greedy Layer-Wise Initialization of Neural Network

P101

Thermal Dissipation and Analysis for electrical packages

P102

以微波電漿束化學氣相沉積系統在氧化鋁管壁內成長類鑽碳薄膜之研究

P103

利用超音波噴塗製備二氧化矽疏水薄膜

P104

Performance Comparisons of Feature Selections for Big Data

P105

Application of Deep Learning in Pattern Recognition

P106

Characteristic Analysis of the Convolutional Neural Network

P107

藉由氣相液相固相機制所合成氮化鎵奈米線

P108

奈米碳管木質素共摻牛皮明膠假體材料之微波介電特性

P109

氮化硼的添加對 316L 硬銲銲縫的熱傳導性質影響

P1010


P110

二氧化鈦鍍膜之濕式沈積高分子基板表面改質之影響

P111

以超音波噴塗法製備親水性二氧化矽薄膜材料研究

24

砷化鎵在酸性溶液中的奈米薄膜生成

劉漢忠

大華科技大學機電工程系

新竹縣芎林鄉大華路 1號

摘要

本研究使用砷化鎵(GaAs)半導體測定在照光的條件下感應耦合電漿技術的

溶解速率和奈米薄膜生成使用兩種X-射線繞射分析技術分別是廣角度繞射

(WAD)和掠角度繞射(GAD)廣角度繞射分析蝕刻溶液H2SO4H2O只從一個基體氧

化物的晶格組介面射檢測每個繞射線出現可能引起的反應物表面層反射光束的

干涉圖案實驗使用掠角度繞射X射線用來確保高敏感度的表面型態分析不僅

分析其化學成分也檢測了氧化物的結構特徵研究發現GaOOH相會成長於氧化

物的表面上並且使得GaAs溶解速率急劇增加這些反應性質的差異可以解釋在

H2O2H2O溶液中反應是否會在GaAs表面上形成GaOH2+中間產物的熱力學穩定的能

量趨勢因此GaAs的表面上會有GaOOH化合物的形成依據熱力學推測乃因硫

酸溶液中加入了H2O2反應過程會產生GaOH2+中間產物使得GaAs在酸液中的反應

溶解速率會因此而急遽加速在照光或不照光下的ICP測試GaAs在H2SO4系統中

的溶解速率極低

關鍵詞砷化鎵奈米薄膜感應耦合電漿廣角度繞射掠角度繞射

P21

25


HAN-CHUNG LIU

Department of Mechatronics Engineering

Ta Hwa University of Science and Technology

No1 Dahua Road QiongLin Shiang HsinChu County 307 Taiwan

ABSTRACT

The electrochemical dissolution rates and nanoscale films oxide of GaAs were

determined by the inductively coupled plasma technique (ICP) under illumination

Both X-ray wide angle diffraction (WAD) and glancing angle diffraction (GAD)

techniques were used Diffraction from only one lattice set in the matrix oxide was

detected in etching with H2SO4H2O solution by wide angle diffraction Each

diffraction line appeared as an interference pattern Glancing angle diffraction of

X-ray source ensured high sensitivity not only to investigate chemical composition

but also to characterize the structural features of the oxides The GaAs dissolution rate

in aqueous sulfuric acids solutions increased dramatically in the presence of H2O2

and the GaOOH phase was uniquely found on the oxidized surface It is postulated

that the production of GaOH2+

intermediate is thermodynamically favored so that the

dissolution rate of GaAs in H2SO4 system is accelerated by the present of H2O2 The

dissolution rate of GaAs in H2SO4 systems was low by ICP test under either

illumination or dark

Key Words GaAs nanoscale films inductively coupled plasma WAD GAD

26


林穎巧林泱蔚


彰化市進德路一號

摘要

本篇研究就由家用微波爐微波輔助合成的方式利用雞蛋白作為板模及保護劑製備具有螢光性質的金奈米團簇（Gold nanocluster Au NCs）雞蛋白中富含豐富的蛋白質來源在鹼性的環境下色胺酸與酪胺酸或將金離子還原成金原子合成反應時間短（五分鐘）且符合綠色化學的準則使用 370 nm 的激發光雞蛋白螢光金奈米團簇（egg－AuNCs）會放出 646 nm 的紅色螢光利用高解析穿透式電子顯微鏡可以知道 egg-AuNC 粒徑大小為 545 plusmn 276 nm此外根據以往的研究指出由於 Hg

2+ndashAu

+間的金屬親核鍵能夠明顯的使

egg-AuNC 的紅色螢光消光因此可將所製備 egg-AuNC 開發成重金屬汞離子的感測器針對汞離子的最低偵測極限為 219 M（SN Ratio = 3）應用於湖水中仍具有良好的回收率範圍（100-1115）本篇研究發展出來的奈米探針具有簡單快速合成高選擇性的優點並符合綠色化學的觀點對環境友善關鍵字金奈米團簇螢光汞微波輔助合成綠色化學

P22

27

Green Synthesis of Egg-Protected Au Nanocluster

and their Fluorescence-Quenched sensing of Hg(II)

Ying-Chiao Lin Yang-Wei Lin

Department of Chemistry National Changhua University of Education Changhua

City Taiwan

Abstract

In this study a household microwave (MW)-assisted synthesis method for

preparation of fluorescent chicken egg white (CEW)-stabilized gold nanoclusters

(eggndash AuNCs) has been developed CEW was used as template and protector CEW

contains rich source of protein which lead to the formation of eggndashAuNCs Tyrosine

and tryptophan amino acid residues are responsible for the conversion of Au ions to

Au0 under alkaline condition Not only the reaction time can be shortened to five

minutes but the method confirms to the demand for the green chemistry due to the

superheating and non-thermal effects of the MW energy The as-prepared eggndashAuNCs

had red emission (λem＝646 nm) when excited at 370 nm From high-resolution

transmission electron microscopy the size of the eggndashAuNCs was well-dispersed and

the average diameter of ca 545 nm In addition We demonstrated that the

metallophilic bond between Au+ and Hg

2+ would quench the red fluorescence of

eggndashAuNCs leading to develop the as-prepared eggndashAuNCs as the nanoprobe for

Hg2+

ions The limit of detection for Hg2+

ions was 219 M (SN Ratio = 3) The

practicality of the eggndash AuNCs probe was validated for the determination of Hg2+

ion

concentration in environmental water samples (lake-water) with recoveries of

100-1115 The proposed MW-assisted synthesis method for preparation of

eggndashAuNCs its advantages of simplicity fast reproducibility selectivity and

environmentally friendly Keyword gold nanocluster fluorescence mercury green chemistry

1

氫化非晶矽中子帶間隙的光學吸收

范榮權 1曾偉毓 1 宋皇輝 2李世鴻 1

1 大葉大學電機工程學系

2大葉大學材料科學與工程學系

摘要

利用新的光激熱偏折技術量測物質的光導吸收光譜我們可以得到在光導吸收中有很明

顯的光吸收特性能量在傳導帶以下的 12eV 到 085eV 的吸收峯可以看出是非晶矽

的懸鍵所產生中性或帶電的缺陷態能階為了增強光激熱偏折以去離子水為熱傳導介質

的訊號我們引用邁克遜干涉效應來改善此系統此種方法可以使光激熱偏折系統在熱

遲鈍的傳導介質中提高它的靈敏度

關鍵詞半導體非晶態矽光吸收缺陷

THE OPTICAL ABSORPTION OF SUB-BANDGAP IN

HYDROGENATED AMORPHOUS SILICON

Jung-Chuan Fan1Wei-Yu Tseng

1 Huang-Huei Sung

2 and Shih-Fong Lee1

1 Department of Electrical Engineering Da-Yeh University Changhua Taiwan

2 Department of Materials Science and Engineering Da-yeh University Dachun

Changhua 51591 Taiwan

A novel technique based on photothermal deflection spectroscopy is modified to

measure the photoinduced absorption in materials We observed the clear structures in the

photoinduced absorption spectrum The energy located at 12eV to 085eV below the

conduction band edge are the neutral and charged stated of the dangling-bond defects in

a-SiH In order to enhance the PDS signal in the de-ionized water deflected medium we

applied the Michelson interference method to modify the conventional PDS system This

technique enables the sensitive measurement of PDS at the thermal dull liquid medium

circumstance

Keywords Semiconductor Amorphous Silicon Absorption Defect

P23

2


姚品全蕭喆允傅俊豪

摘要

石墨粉以哈莫法(modified Hummers method)製得氧化石墨烯後(Graphene

Oxide)再分別以聯氨(Hydrazine)硼氫化鈉(NaBH4)與兩種不同溫度之氫氣(Hydragon)

還原等方法將其還原為石墨烯(reduction-Graphene Oxide)進行 XPS 表面分析與進行抗

菌測試(Antibacterial test)檢測其抗菌效能氧化還原石墨烯其表面接覆著不同官能基

對其抗菌特性有一定影響經過 XPS 與抗菌比對分析後發現還原程度較高的石墨烯

對於抗菌測試有較佳的結果

關鍵字哈莫法抗菌測試石墨烯XPS

Surface Analysis of reduced Graphene Oxide and

Antibacterial ativity evaluation

Pin-Chuan YaoChe-Yun HsiaoJyun-Hao Fu

Abstract Graphite oxidation to Graphene Oxide by modified Hummers method and then hydrogenated

with Hydrazine NaBH4 and Hydragon at two different temperatures respectively

Reduction-Graphene Oxide And we observed its surface analysis by XPS and antibacterial

test to detect its antibacterial efficacy The surface of the redox graphene is covered with

different functional groups which has certain influence on its antibacterial properties After

XPS and antimicrobial comparison analysis found that a high degree of reduction of graphene

for antibacterial tests have better results

Keyword modified Hummers method Graphene Antibacterial test XPS

P41

3

仿生法沉積氫氧基磷灰石二氧化鈦複合薄膜界面形貌之

操控與抑菌性評估

陳喬毅韓青邑姚品全

摘要

本研究使用 Sol-gol 二氧化鈦與 P25 二氧化鈦分散液所形成二種不同的二氧化鈦表

面再來透過浸泡模擬體液使氫氧基磷灰石成長在兩種二氧化鈦表面上觀察不同的

二氧化鈦表面對氫氧基磷灰石的結晶有何不同並通過抑菌測試確定具有可以有效的抗

菌

氫氧基磷灰石具有吸附的特性希望藉由與二氧化鈦光觸媒的結合形成氫氧基磷

灰石與二氧化鈦的複合材料達到無光時氫氧基磷灰石作用吸附的特性有光時驅動二

氧化鈦光觸媒分解

關鍵詞氫氧基磷灰石二氧化鈦抑菌

P42

4


范榮權 1林宜憲 1宋皇輝 2李世鴻 1 1大葉大學電機工程學系


摘要

我們已經研究了奈米碳管中低維半導體的電子傳輸和光學性質藉由通過高功率激光照

射碳束的結將會形成並且誘導半導體的二維系統需要光致發光測量來區分在該奈

米碳管的低維度系統中發生的光致載流子遷移的行為基於電導率測量研究準半導體在

奈米碳管中的電子傳輸性質對碳束和鏈結兩者的二維系統的磁阻測量以確定在半導體

的低維系統中的電子傳輸的重要性質

關鍵詞奈米碳管低維半導體電子傳輸

Jung-Chuan Fan1 I-Hsien Lin

1 Huang-Huei Sung

2and Shih-Fong Lee

1

1Department of Electrical Engineering Da-Yeh University

2Department of Materials Science and Engineering Da-Yeh University

Abstract

We have investigated the electron transport and optical properties of low dimensional

quasi-semiconductor in carbon nanotubes By the high power laser illumination a junction of

the carbon bundles will be formed and induce a two dimensional system of

quasi-semiconductor Photoluminescence measurement is required to distinguish which

behavior of the photoinduced carrier transfer occurs in this low dimensional system of carbon

nanotubes The electronic transport properties of quasi-semiconductor in carbon nanotubes are

investigated based on the conductivity measurement The magnetoresistance measurements

on the two dimensional system of both of the carbon bundles and junctions is performed to

determined the importance properties of electronic transport in the low dimensional system of

quasi-semiconductor

Keywordcarbon nanotubeslow dimensional quasi-semiconductorelectron transport

P51

5

以溶膠-凝膠法合成 B 摻雜 ZnO

和其性質研究

張莉毓林鴻裕李宗修許瑋宸

國立屏東科技大學機械工程系

91201 屏東縣內埔鄉老埤村學府路 1 號

摘要

氧化鋅為典型的II-VI族半導體與二氧化鈦相比氧化鋅也有相似的能隙(32 eV)

其具有無毒性高效能及低成本等優點非常適合作為光觸媒材料本研究使用三嵌段

兩性共聚物(F127)作為天然模板以硝酸鋅為反應前驅物使用溶膠-凝膠法製備未摻雜

及硼摻雜氧化鋅之奈米粉末利用XRDSEM及FE-TEM分析氧化鋅的特性探討煆燒

溫度對氧化鋅結構及光催化活性的影響XRD分析顯示氧化鋅為六方纖鋅礦結構由

於摻雜硼會造成晶格收縮導致(101)面略往高角度位移SEM分析顯示氧化鋅粒子都

具有團聚現象光催化活性測試對於AO7降解硼摻雜氧化鋅奈米光觸媒在紫外光的照

射下具有比Pure ZnO更強的光催化活性其中硼含量為001且煆燒溫度在550時對於

AO7的降解在30分鐘內降解率可達到100

關鍵詞溶膠-凝膠法氧化鋅摻雜光催化

P61

6

Preparation and Properties of B-doped ZnO by Sol-Gel

Process

Lay Gaik Teoh Hong-Yuh Lin Zong-Xiu Li Wei-Chen Hsu

Department of Mechanical Engineering National Pingtung University of Science and

Technology

No 1 Shuefu Road Neipu Pingtung 91201 Taiwan

Abstract

ZnO is a typical group II-VI semiconductor compared with classical photocatalyst titanium

oxide (TiO2) ZnO nanopowders have a similar band gap energy (32 eV) It is very suitable

as photocatalyst materials because of their non-toxic high performance low cost We study

the relationship between the properties of ZnO calcination temperatures and the

concentration of doped impurities In this study The synthesis was accomplished by using

triblock copolymer (F127) as the natural template and zinc nitrate as the precursor undoped

as well as boron-doped ZnO nanopowders were prepared by sol-gel process The

characteristics of ZnO nanopowders was analyzed by X-Ray diffraction (XRD) scanning

electron microscope (SEM) and field emission transmission electron microscopy (TEM) The

effects of boron-doping and calcination temperatures on the structural and photocatalytic

properties of ZnO particles were investigated The X-Ray diffraction results revealed that the

prepared structure of ZnO is wurtzite structure in this study Due to boron-doping the

substitution will lead to the contraction of the lattice and thereby causes the (101) peak to shift

to high angle The scanning electron microscope results revealed that the synthesis of ZnO

particles were easily agglomerated In photocatalytic activity testing the prepared

boron-doped ZnO nanopowders catalysts shown enhanced photocatalytic activity than pure

ZnO under ultraviolet irradiation for AO7 degradation The best degradation for AO7 can

reach 100 within 30 minutes irradiation when the content of boron is at 001 and the

calcination temperature is at 550

Key words Sol-Gel method Zinc oxide doping Photocatalytic

7

以溶膠-凝膠法合成 Mn

摻雜介孔 SnO2及其性質研究

張莉毓林鴻裕葉俊毅陳冠安



摘要

二氧化錫是具有金紅石結構的寬禁帶半導體材料並有氣敏光學電學催化性

質且有廣泛的應用潛力並利用摻雜來改變二氧化錫的性質讓二氧化錫可以達到提

高性能本研究以三嵌段兩性共聚物(F127)作為模板以氯化錫為前驅物摻雜不同比

例氧化錳本實驗使用溶膠-凝膠法經由 500煆燒後而生成介孔二氧化錫再經由

X-ray繞射分析(XRD)掃描式電子顯微鏡(SEM)穿透式電子顯微鏡(TEM)及光催化活

性測試等各種分析探討不同比例及煆燒溫度對於二氧化錫性質的影響由XRD分析得

知純二氧化錫及摻雜氧化錳之二氧化錫均為正方晶金紅石結構經XRD計算晶粒大

小可以知道摻雜氧化錳能夠抑制二氧化錫晶粒成長當MnSnO2 為 0109 時經煆

燒 500後晶粒大小為 117 nm可由TEM得知二氧化錫晶粒大小及結晶形貌最

後光催化活性測試得知當MnSnO2 為 0109 時經煆燒 500後可以讓二氧化錫催

化劑催化效率變好

關鍵詞二氧化錫溶膠-凝膠法摻雜錳光催化

P62

8

Preparation and Properties of Mn-doped SnO2 by

Sol-Gel Process

Lay Gaik Teoh Hong-Yuh Lin Jyun-Yi Ye and Guan-An Chen


Technology

NO 1 Shuefu Road Neipu Pingtung 912 Taiwan

Abstract

Tin oxide (SnO2) is wide band gap semiconductor material having a rutile structure and

there are gas sensing optical electrical catalytic properties and there is a wide range of

potential applications to change the nature of the use of doping SnO2 SnO2 can make to

improve performance In this study a triblock copolymer (F127) as a template tin chloride as

precursor manganese oxide doped with different ratios this experiment using a sol - gel

method in which mesoporous SnO2 was prepared by calcination at 500 and then analyzed

by X-ray diffraction (XRD) scanning electron microscopy analysis (SEM) transmission

electron microscopy (TEM) and photocatalytic activity testing and to explore different

calcination temperature on the properties of tin dioxide The XRD analysis revealed that both

pure SnO2 and Mn doped SnO2 had tetragonal rutile crystal structures grain and size

calculated by XRD Mn-doped tin oxide can inhibit grain growth When MnSnO2 is 0109

after calcined at 500 the grain size is 117 nm The TEM analysis showed that the size of

SnO2 grains and crystal topography as well as grain composition Finally the photocatalyst

activity testing revealed that when MnSnO2 was at the ratio of 0109 and calcined at 500

performed a much better photocatalytic efficiency

Key words Tin oxide sol-gel method Mn-doped photocatalytic

9

以溶膠-凝膠法製備介孔二氧化鈰及其特性研究摻雜鈦

張莉毓劉恩玓林志忠


91201屏東縣內埔鄉老埤村學府路 1號

摘要

本實驗以溶膠-凝膠法製備介孔二氧化鈰摻雜鈦之粉體其中煆燒溫度為 650

以純二氧化鈰(pure CeO2)與二氧化鈰摻雜鈦之比例為 012088 的兩者進行比較所合

成之粉體經熱重分析(TGA)X-ray繞射儀(XRD)掃描式電子顯微鏡(SEM)及光觸媒活性

測試(Photocatalytic activity)探討其材料特性微結構及光催化反應特性於 TGA

分析中發現煆燒溫度在 200以上時可將三嵌段兩性共聚物完全移除而本實驗之煆燒

溫度為 650因此可確保本實驗結果之正確性於 XRD 分析中發現所製備的粉體皆為

二氧化鈰立方晶-螢石結構且 pure CeO2的晶粒大小為 2926nm摻雜鈦之二氧化鈰的

晶粒大小為 1488nm又於 SEM 分析中發現摻雜鈦之二氧化鈰的孔洞數量與間距明顯比

純二氧化鈰少因此可說明摻雜鈦能有效抑制二氧化鈰的晶粒成長於光催化活性測

試中發現純二氧化鈰之降解效率為 895而摻雜鈦之二氧化鈰之降解效率為 100表

示二氧化鈰摻雜鈦之比例為 012088可得到比純二氧化鈰更好的光催化效果

關鍵字介孔二氧化鈰鈰鈦摻雜物光催化

P63

10

Preparation and Characterization of Ti-doped Mesoporous

CeO2 by Sol-Gel process

LAY GAIK TEOH EN DI LIOU and JHIH JHONG LIN

Department of Mechanical Engineering National Pingtung University of Science

and Technology


ABSTRACT

In this study Ti doped mesoporous CeO2 powders were synthesized by sol-gel

process The calcination temperatures of 650 and pure CeO2 CT 012088

respectively Synthesized powder by thermal gravimetric analysis (TGA) X-ray

diffraction (XRD) scanning electron microscopy (SEM) and photocatalytic

activity Discussion its material properties microstructure and photocatalytic

reaction characteristics In the TGA analysis it is found that when the

calcination temperatures is 200 or higher the triblock copolymer is

completely remove In this study the calcination temperatures is 650 so the

results of this sdudy can ensure the correctness In the XRD analysis it is

found that the as-prepared materials in this study all are the cubic fluorite

crystal structures The grain size is 2926nm for pure CeO2 and 1488nm for

Ti-doped CeO2 In the SEM analysis it is found the number and spacing of holes

doped with Ti-doped CeO2 are less than that of pure CeO2 So the introduction

of Ti can inhibit the grain growth of CeO2 In the photocatalytic activity

analysis it is found the degradation of pure CeO2 is 895 and that of Ti-doped

is 100 So the CT 012088 can be better than pure CeO2 degradation

KeywordsMesoporous CeO2 CT dopant Photocatalysis

11


施郁伶賈峰蔡春進

國立交通大學環境工程研究所

新竹市大學路 1001 號

摘要

本研究以高純度金属鋅粉為原料高溫蒸發產生鋅蒸氣為前驅物採用化學氣相合

成法製備奈米氧化鋅通過稀釋驟冷管控制氧氣濃度和冷卻速度利用掃描式電移動度

粒徑分析儀(SMPS)穿透電子顯微鏡(TEM)X光能量分散光譜儀(EDS)和氣溶膠顆粒品

質分析儀(APM)分析了蒸發溫度稀釋氣體流量對製備的奈米氧化鋅粒徑大小數目濃

度形貌結構和有效密度之影響研究結果表明在蒸發溫度為500載氣流量為

1Lmin稀釋氣體流量為50Lmin的條件下可連續3小時穩定的製備出粒徑為10nm

數目濃度為3times107 cm

3之枝杈狀奈米氧化鋅

關鍵詞枝杈狀納米氧化鋅化學氣相合成法稀釋驟冷管有效密度

Size-Controlled and Continuous Formation of ZnO

Nanoparticles in Quenching Chemical Vapor Synthesis

Reactor

Yu-ling Shin Feng Jia and Chuen-Jinn Tsai

Institute of Environmental Engineering National Chiao Tung University

No 1001 University Rd Hsinchu 30010 Taiwan

Abstract

ZnO nanocrystals (ZnO-NCs) were prepared via chemical vapor synthesis (CVS) method at

high temperature The effects of furnace temperature carrier gas flow rate and dilution flow

rate on the particle size and concentration distribution morphology and effect density of

ZnO-NCs synthesis were investigated Scanning mobility particle sizer (SMPS) transmission

electron microscopy (TEM) and energy dispersive spectrometer (EDS) have been used to

characterize the particle size concentration morphology and composition of ZnO-NCs The

results indicated that the particle size of tetrapod zinc oxide can be stabilized to 10nm and the

concentration is 3times107 cm

3 under the conditions of evaporation temperature of 500

carrier gas flow rate of 1Lmin and dilution gas flow rate of 50Lmin

Key words Zinc oxide tetrapod chemical vapor synthesis quench and dilution probe effect

density

P64

12


王耀德 1 蘇柏瑋 1

1國立臺北科技大學光電工程學系

臺北市大安區忠孝東路三段一號

摘要

本研究使用噴霧熱解法(spray pyrolysis)製備摻釔氧化鋅薄膜探討釔摻雜氧化鋅薄

膜的透光率和光致發光特性

由文獻得知釔摻雜氧化鋅薄膜具有高光學透光率及光致發光的特性本實驗以噴霧

熱解法於基板上沉積摻雜的氧化鋅薄膜溶液的製備使用醋酸鋅(Zn(CH3COO)2)為基

底再加入硝酸釔(Y(NO3)3)的水溶液沉積後的氧化鋅薄膜樣品以 X 光繞射儀(XRD)

分析薄膜的結晶結構與成長方向以霍爾量測來分析導電載子極性載子濃度及載子遷

移率以光譜儀分析光學透光率並以 PL 量測光學性質

關鍵詞超音波噴霧(ultrasonic spray)Y-doped 氧化鋅薄膜

P71

13


廖政儒王耀德

國立臺北科技大學光電工程系

臺北市大安區忠孝東路三段 1 號

摘要

本實驗利用超音波噴霧熱解法製作銅-鈷共摻雜氧化鋅薄膜探討不同摻雜濃度對

薄膜之結晶結構導電特性以及磁性影響

超音波噴霧熱解法(Ultrasonic spray pytolysis)具有架設簡單製成快速成本低廉之

優點所以本實驗使用超音波噴霧熱解法於矽基板上成長薄膜利用醋酸鋅

[Zn(CH3COO)2] 加水泡製超音波噴霧熱解法所需溶液製作氧化鋅(ZnO)薄膜摻入醋

酸銅[Cu2(CH3COO)4]形成 p-type再摻入醋酸鈷[Co(CH3COO)2]成長具有磁性材料之氧

化鋅薄膜實驗中以 X 光繞射儀(XRD)探討薄膜結晶結構霍爾量測求得載子遷移率及

載子濃度並利用表面磁光科爾效應(SMOkE)分析薄膜材料之磁特性

本實驗發現銅-鈷共摻雜氧化鋅薄膜在室溫下具有鐵磁性之稀磁性半導體並且隨

著鈷摻雜濃度提升剩磁(Remanence)與矯頑力(coercivity)隨之上升

關鍵詞超音波噴霧熱解法 (ultrasonic spray) p-type 氧化

P72

14

石墨烯的添加對鎳基超合金銲件之顯微組織

和機械性質研究

李義剛 1許恆耀 2

1大葉大學材料與工程學系

2大葉大學醫療器材設計與材料碩士學位學程

鎳基超合金為渦輪引擎主要材料其製造程序中常會使用真空硬銲技術來確保銲件

有優良的製造品質本研究係在填料金屬加入奈米級石墨烯藉由改變添加量來探討鎳

基超合金 Inconel 718 之銲縫的顯微組織和機械性質影響研究結果發現原銲縫中間有

連續狀金屬間化合物聚集且硬度值非常的高然而添加石墨烯的金屬化合物皆均勻

分佈在銲縫內顯示添加石墨烯具有使銲縫均質化的效果而且銲縫中心的硬度值更

是大幅度的降至和母材相近若添加達 07wt石墨烯的銲縫會有孔洞形成添加

03wt石墨烯之銲件則有最高剪切強度約為 3908 MPa提升約 3的強度另外添

加少量石墨烯亦有助於銲縫寬度變窄的效果

關鍵字石墨烯鎳基超合金Inconel 718真空硬銲均質化

P73

15

The Influence to Graphene on the Microstructures and

Mechanical Properties of Nickel-based Superalloy

by Vacuum Brazing

K Lee1S H Yao

2


2Master Program of Design and Material for Medical Equipment and Devices

Nickel-based superalloy is the major material of turbine engine During its

manufacturing process vacuum brazing technology is usually applied to ensure the excellent

quality of weldments Through adding nanometer-level graphene to the filler metal and

changing the volume of addition this study discusses its influence on the microstructure and

mechanical property of the nickel -based super alloy weldment Inconel 718 The result finds

out that there are continuous inter-metallic compounds gathering in the original weld with

high hardness value However after adding the graphene the metallic compounds become

equally distributed in the weld which means graphene has effect on the homogenization of

weld Besides the hardness value of the weld center has sharply reduced to a level close to

the base metal If the volume of audition reaches 07wt there will be holes forming in the

graphene weld if it is 03wt the maximum shear strength of the graphene weldment will

be about 3908 MPa increasing by nearly 3 Moreover adding a little graphene also has

effect on narrowing the weld width

Keywords Graphene Nickel-based superalloy Inconel 718Vacuum razingHomogenization

16


林兆惟 1 宋皇輝 2

范榮權 3

1大葉大學醫療器材設計與材料碩士學位學程 2大葉大學材料科學與工程學系

3大葉大學電機工程學系

摘要

以在本實驗中我們利用射頻濺鍍在大小為 11 的康寧玻璃基板上沉積氧化鋅薄

膜再利用黃光微影技術將設計出的不同光罩圖形製作出不同之金屬氧化鋅覆層樣品

我們選擇了功函數不同之數種金屬觀察不同金屬氧化鋅覆層照光時的持續性光電導的

影響

關鍵詞射頻濺鍍持續性光電導黃光微影蝕刻金屬覆層

Persistent Photoconductivity of MetalZnO Bi-layer Thin

Films on Glass Substrate

Chao-Wei Lina Huang-Huei Sung

ab and Jung-Chuan Fan

c

aMaster Program in Design and Materials for Medical Equipments and Devices Da-yeh

University Dachun Changhua 51591 Taiwan

bDepartment of Materials Science and Engineering Da-yeh University Dachun Changhua

51591 Taiwan

cDepartment of Electrical Engineering Da-Yeh University Dacun Changhua 51591 Taiwan

Abstract

In this experiment we study the persistent photoconductivity of the rf magnetron sputtered

ZnO thin films on glass substrates We use photo lithography to grow different kinds of

ultrathin metal overlayer The ultrathin metal overlayer which is chosen is based on their

significant difference in work function The persistent photoconductivity data are analyzed

and compared to clarify the influence of the metal ultrathin films on the transport property

Key words rf magnetron sputtered persistent photoconductivity photo lithography ultrathin

metal overlayer

P74

17


梁秭瑋 1宋皇輝 12范榮權 3



摘要

本研究以固相反應法使 ZnO 摻雜不同比例的 Er+3 這個製程方法操作簡單成

本相對較少可使用於大規模生產通過 X 射線繞射 (XRD)能量分散 X 射線光譜儀

(EDS)掃描電子顯微鏡 (SEM) 和光致螢光量測 (PL) 對樣品進行分析鉺摻雜 ZnO

的螢光性質研究在室溫下顯示增強可見光發光由於產生類反位氧 OZn 和間隙氧誘

發 Oi 的缺陷由於晶格中的固有缺陷而引起的氧空位的引入可能引起綠色波長中的深

能帶發射

關鍵詞氧化鋅氧化鋅摻鉺氧化鉺固相反應法

Preparation and Characterization of Erbium Doped with

ZnO

LiangZi-Weia Huang-Huei Sung


c

aMaster Program for Design and Materials for Medical Equipments and Devices Da-yeh



51591 Taiwan


Abstract

The doped ZnO crystals with different erbium ions were prepared by solid state reaction

technique The method is simple relatively less expense and enables the production in large

scale The samples were characterised by X-ray diffraction (XRD) energy dispersive X-ray

spectroscopy (EDS) scanning electron microscopy (SEM) and photoluminescence Studies of

fluorescent property erbium doped ZnO at room temperature show enhanced visible light

emission This suggests the production of induced defects like antisite oxygen OZn and

interstitial oxygen Oi The introduced oxygen vacancies which arose because of the intrinsic

defects in the crystal lattice may cause deep band emissions in the range green wavelength

Key words ZnO erbium doped ZnO erbium solid state reaction technique

P75

18


韓青邑陳喬毅姚品全

摘要

石墨烯電泳沉積法(EPD)沉積於ITO基板並濺鍍白金作為染料敏化太陽能電池的

對電極進而代替原先的白金對電極透過控制電壓及時間製備對應電極工作電極為

3層TiO2以恆電位移測量交流阻抗(EIS)及循環伏安(CV)分析上述元件

關鍵詞恆電位移循環伏安交流阻抗TiO2電泳沉積石墨稀

P76

19


張家瑋李得勝

大葉大學電機工程系


鈷鐵氧體在可見光區具有較大的磁光克爾效應克服了目前市場上商用磁光存儲材

料非晶態稀土-過渡金屬在短波長區的克爾旋轉角小抗氧化能力較差的缺點再加上其

較大的矯頑力使其成為極具競爭力的高密度磁光記錄材料但如何在保持鈷鐵氧體飽和

磁化強度適當高的同時進一步提高其矯頑力以期獲得適合高密度資訊存儲水準的磁光

讀寫特性是目前的研究熱點

本研究利用化學共沉法製備不同比例的鈷鐵氧體粉末(CoXFe3-XO4)除了易於控制

成分比例外也成功製作純相的鈷鐵氧體塊材利用 X 射線繞射實驗顯示出有單相的

特性目前在表面分析也測量了掃描電子顯微鏡(SEM)實驗結果顯示該樣品可製備

具有晶粒 200~700 nm此外震動樣品磁度儀 (VSM)的磁性量測也顯示具有陶鐵特性

顯示出 CoFe2O4的比例最好

關鍵字化學共沉法掃描電子顯微鏡震動樣品磁度儀

Study of Physical Properties in CoXFe3-XO4 bulk

Chia-Wei Chang1 and De-Sheng Lee

1

1Department of Electrical Engineering Dayeh University

168 University Rd Dacun Changhua 51591 Taiwan ROC

Abstract

Co-ferrite have a bigger magnetic-optic kerr effect in visible region Making it a highly

competitive to overcome market commercial magneto-optical storage material amorphous

rare earth - transition metal in the short-wavelength region of the kerr rotation angle is small

and poor antioxidant capacity shortcomings coupled with its large coercivity with the high

density magneto-optical recording material But how to improve the co-ferrite with high

saturation magnetization and to increase the coercive force in order to obtain a magneto

optical read-write characteristics for high density information storage level which is the

current research focus

This research uses chemical coprecipitation preparation of different proportion co -ferrite

powder (CoXFe3-XO4)In addition which is easy to ease control ingredients but also

successfully produced pure phase cobalt ferrite bulk X-ray diffraction experiments shows

that there are single-phase characteristics Surface analysis is also measured by scanning

electron microscope (SEM)experimental results show that the sample with a grain of 200 to

700 nm The results of the vibrating sample magnetometer(VSM) show that ferrite magnetic

features showing the proportion of the best CoFe2O4

Keywords Coprecipitation scanning electron microscope (SEM) Vibrating Sample

Magnetometer(VSM)

P77

20


李得勝



BiFeO3是少數在室温下同時具備鐵磁性和鐵電性的鐵磁電材料之一本研究用

BiFeO3的製程來分析純相 BFO 的合成是由於動能相當困難和氧化鉍-Fe2O3 系統的熱

力學性質BFO 奈米粉末可以通過濕法化學方法合成像和固相反應每個合成背後的

主要目的技術是為了獲得在最低的溫度的達到最高純度使成本效益發揮至最高

BiFeO3的合成在一定溫度下前體氧化鉍避免發揮了重要作用不純的階段將鉍鐵

氧錠升溫至 500 度再將其維持 2 小時最後降至常溫最後在經過 X-Ray 晶格繞射分析

後觀察垂直於薄膜的表面之Ｘ射線繞射顯示出 BFO 薄膜比較好之結構相且其它

方面也相對有良好改善而對於薄膜的表面分析則以掃描電子顯微鏡(SEM)作量測我

們可以發現結晶與表面的平整度在比較低的溫度之下也比較良好

關鍵字鐵磁電材料掃描電子顯微鏡Ｘ射線繞射

Study of Physical Properties in different ratio Bi-Fe-O

bulk

Der-Sheng Lee

Department of Electrical Engineering Dayeh University


Abstract

BiFeO3 are minorities both at room temperature ferromagnetic and ferroelectric

properties of ferromagnetic materials This research process to analysis of BiFeO3 solid

phase synthesis of BFO is due to the kinetic energy is difficult and the thermodynamic

properties of Bismuth oxide-Fe2O3 system BFO Nano-powder by wet chemical method

synthesis and solid state reaction Behind every synthesis the main purpose of technology is

to get at the lowest temperature of the highest purity and cost-effectiveness to maximize

Under certain temperature synthesis of BiFeO3 precursor to avoid bismuth oxide plays

an important role not only in the stage Bismuth iron oxygen ingots warming to 500 degrees

again which will maintained 2 hours last fell to at room temperature observation vertical

film of surface of x ray diffraction displayed out BFO film compared good of structure phase

and other aspects also relative has good improved and for film of surface analysis is to scan

electronic microscope for volume measuring we can found Crystal and surface of flat degrees

in compared low of temperature also compared good

Keywords ferromagnetic materials scanning electron microscope X ray diffraction

P78

21


范榮權 1劉子豪 1


摘要

我們用 SDH 效應振盪技術研究磁場中載流子自旋的電性能量子限制的效應作為載流子

在半導體異質結的低維度中是非常顯著的由於 Landau 水平的變寬導電性將隨著磁

場的增加而被觀察為振盪形式這是用於確定半導體的有效質量和載流子濃度的有用工

具載波的集中度由振盪信號的頻率決定發現磁阻表示在磁場的方差中的振盪跳動

它揭示了子帶將存在於該半導體系統中自旋分裂將根據兩個子帶的不同能量來確定

關鍵詞自旋分裂磁阻異質結構迴旋共振

The Magnetoresistance Of Semiconductor In Low Dimension

System

Jung-Chuan Fan1Tzu-Hao Liu1


Abstract

We have investigated the electrical property of the carrier spin in a magnetic field with the

Subnikov-de Haas oscillation techniques The effect of quantum confinement is very

remarkable as the carrier in the low dimension of semiconductor heterostructure The

conductivity will be observed as oscillation form with increasing magnetic field due to the

broadening of the Landau level This is a useful tool to determine the effective mass and

carrier concentration of semiconductor The concentration of carrier is determined by the

frequency of oscillation signal It is found that the magnetoresistance expresses an oscillation

beating in a variance of magnetic field It reveals that the subbands will exist in this

semiconductor system The spin splitting will be determined from the energy different of two

subbands

Keywords spin splitting magnetoresistance heterostructure cyclotron resonance

P79

22

E 化數位學習-奈米材料科技

劉漢忠



摘要

本研究說明rdquo奈米材料科技rdquo以遠距教學以及數位教材設計數位教材製作方法主

要以 EverCam 簡報錄影軟體數位剪輯軟體搭配數位錄影機音效卡顯示卡高速

CPU 等設備經由適當的數位影音剪輯轉檔和壓縮後可以提供學生遠端課程學習之

機會遠距教學及數位學習提供教師（助教）學生進行線上測驗發佈學習資訊

互動式學習設計（聊天室或討論區）教師呈現的教學策略及技巧學生可以容易學會

及掌控並願意課後自我學習及做作業並提供適合及寬闊的展示情境背景讓文字及

圖形可以適當地被展示出來設計專屬於某學科的背景圖更能凸顯本課程之特色

關鍵詞遠距教學數位學習簡報錄影軟體互動式學習

P91

23


HAN-CHUNG LIU




ABSTRACT

This study describes the E-Learning of Nanomaterials Science according to the creative

design of the distance education and digital teaching materials Mainly by EverCam

presentation record software digital editing software with a digital video recorder sound

card graphics card high-speed CPU and other equipment Through the appropriate digital

video and audio editing file conversion and compression the course can provide students

with remote learning opportunities The distance education and e-Learning provided teachers

and students in online testing publish learning information interactive learning design in

chat rooms Teachers present teaching strategies and skills that students can easily learn and

control and are willing to self-study and homework after school And to provide suitable and

broad display context so that text and graphics can be properly displayed the design of a

discipline dedicated to the background map highlighting the characteristics of this course

Key Words distance education e-Learning presentation record software interactive learning

24

以貪婪逐層法初始化神經網路

陳木松 1 王萱鍢 2 黃其冸 3 1 大葉大學電機系彰化縣大村鄉學府路 168 號

2 中州科技大學電機與能源科技系彰化縣員林市山腳路三段 2 巷 6 號 3 彰化師範大學電子系彰化市師大路二號

摘要

梯度消失是神經網路以梯度為參數調整基礎的主要問題而且愈接近輸入層的隱藏層其神經元學習速度會愈慢特別是當隱藏層的數目愈多時梯度消失的問題也越來越嚴重本文針對此一問題以貪婪逐層(亦即對比分歧)預訓練的方式初始化權重值作為後續網路真實學習的基礎因此本研究以受限波茲曼機器為權重預訓練的方法其中受限波茲曼機器是一種可經由輸入資料集合學習機率分布的隨機生成神經網路受限波茲曼機器是由二值的隱藏層與可見層的神經單元所組成這二層的神經元彼此之間互相全連接但同一層的神經元沒有連結在預訓練的階段受限波茲曼機器根據所輸入的資料自動調整權重值訓練的過程是以吉布斯採樣(Gibbs sampling)試圖最小化重建誤差完成對權重的更新完成預訓練之後將受限波茲曼機器堆疊(stacking)在一起形成深度信任網路(Deep Belief Network)然後再對此一網路以梯度倒傳遞的方法微調網路的連接權重值關鍵詞梯度消失貪婪逐層受限波茲曼機器吉布斯採樣

P92

25


Mu-Song Chen1 Hsuan-Fu Wang

2 Chi-Pan Hwang

3

1Department of Electrical Engineering Da-Yeh University 510 Changhua Taiwan

2Dept of Electrical and Energy Technology Chung Chou University of Science and

Technology 510 Changhua Taiwan

3Department of Electronic Engineering National Changhua University of Education No2 Shi-Da Road Changhua City Taiwan

Abstract

Vanishing gradient problem is a serious issue in training neural networks with gradient based

methods In particular this problem makes it really hard to learn and tune the parameters of

the earlier layers in the network This problem becomes worse as the number of layers

increases In this study a greedy layer-wise (ie contrastive divergence) pre-training method

is applied to ensure that the between-layer weights are properly initialized prior to its actual

training In this sense the Restricted Boltzmann Machine (RBM) is used to fulfill this task A

restricted Boltzmann machine is a generative stochastic neural network that can learn a

probability distribution over its set of inputs RBM is a two-layer neural network The two

layers are fully connected to each other and there are no inner connections inside the layers

During training RBM automatically adjusts its weights based on what it perceives Learning

procedure of the RBM consists of several steps of Gibbs sampling and adjusting the weights

to minimize reconstruction error Usually Training is done using the Contrastive Divergence

algorithm After the training is completed the deep belief networks (DBNs) can be formed by

stacking multiple RBMs together and optionally fine-tuning the resulting deep network

with gradient descent and backpropagation

Key words Vanishing Gradient Greedy Layer-Wise Restricted Boltzmann Machine Gibbs

Sampling

26

電子封裝機房的散熱與分析

吳幸珍盧星宇陳建宇廖述祥黃俊瑋

大葉大學電機系彰化縣大村鄉學府路 168 號

摘要

隨著時代進步電子與光電產品朝向輕薄短小以及功能和速率的不斷提昇發展晶片密度與效能雖然提升了但是晶片的發熱密度不斷增加散熱的問題更被重視機房冷卻有6種方法本專題主要針對主動式對流和改變空間兩種方式來做散熱分析模擬與改善設計對原來布局以ANSYS 軟體模擬其散熱情況找出不利散熱的問題點然後加

以改善以達成更好的散熱效果像是機房設定好之後用ANSYS軟體來分析找出問題點後利用改變空間的方式來改善找出最好的散熱方式關鍵詞熱分析IC 封裝渦流改善


Shinq-Jen Wu Sing-Yu Lu Jian-Yu Chen Shu-Xiang Liao and Jun-Wei

Department of Electrical Engineering Da-Yeh University


Abstract

Electronic and photoelectric products go towards thin and short However the function and

speed are in constantly upgrade development As the density and performance of chips are

increased thermal dissipation becomes more and more difficult Therefore how to ensure

good thermal dissipation becomes an important issue There are six cooling methods for

thermal engine rooms In this study we focus on active convection and space modification

methods to achieve better cooling effect The ANSYS software is used for thermal simulation

and analysis We are able to identify the negative points of thermal dissipation through the

ANSYS Then we change the room geography to achieve good thermal dissipation and

turbulent reduction which are conducted in the ANSYS environment

Key words thermal analysis IC package turbulent reductione

P101

27

以微波電漿束化學氣相沉積系統

在氧化鋁管壁內成長類鑽碳薄膜之研究

蘇春熺邱羿源

國立台北科技大學製造科技研究所

台北市大安區忠孝東路三段一號

摘要

本研究以微波電漿束化學氣相沉積 (Microwave plasma jet chemical vapor

depositionMPJCVD)系統沉積類鑽碳(DLC)薄膜在氧化鋁管內表面在MPJCVD系統生

長DLC的總氣體壓力為70 torr 和甲烷濃度025 的條件下來進行研究使用掃描電子

顯微鏡(SEM)X光繞射儀(XRD)和拉曼光譜研究類鑽碳沉積在氧化鋁管內的微結構和品

質的情形

關鍵詞類鑽碳氧化鋁化學氣相沉積法鑽石薄膜

Diamond-like Carbon Films Growth in Alumina Tube by

Microwave Plasma Jet Chemical Vapor Deposition System

CHUN-HIS SU YI-YUAN CHIU

National Taipei University of Technology

No1 Sec 3 Jhongsiao E Rd Darsquoan Dist Taipei City 10608 Taiwan

ABSTRACT

In this study microwave plasma jet chemical vapor deposition (MPJCVD) system

deposited diamond-like carbon (DLC) film on the inner surface of alumina tube The

MPJCVD system was used to study the growth of DLC with a total gas pressure of 70 torr

and a methane concentration of 025 The microstructures and qualities of diamond-like

carbon deposited in alumina tubes were investigated using scanning electron microscopy

(SEM) X-ray diffractometry (XRD) and Raman spectroscopy

Key Words Diamond like carbon Alumina tube MPJCVD Diamond film

P102

28


與智慧隱形雨刷之整合

賴建文林哲群黃俊杰胡大湘莊豐嘉



摘要

本研究利用超音波噴塗製程於後照鏡面上沉積二氧化矽疏水薄膜同時透過材料與

電機技術作結合將汽車雨刷噴霧的加工和二氧化矽自潔塗層作整合完成隱形雨刷

研究所開發的二氧化矽自潔塗層是採用溶膠凝膠法(Sol-Gel process)合成二氧化矽利用

矽酸四乙酯(TEOS)於水時具有水解與縮合特性可以將 TEOS 水解的單體互相聚合產生

縮合反應還原成二氧化矽粒子形成三度空間鍵結的結構最後添加疏水性高分子單

體進去使其再聚合成有機-無機複合薄膜「智慧隱形雨刷」是結合奈米科技觀念使塗

料具有自潔抗反射功能同時利用加壓噴氣水裝置去強化其自潔塗層的表面由於

鍍膜採用奈米技術有著質量輕體積小消耗的能量低使用更少的材料達到更佳的物

性化學特性性與功能性減少對環境的破壞加壓噴氣裝置則是利用現有雨刷噴霧器

去作改良不需要特別加裝故此符合經濟與環保併重的重要發展課題

關鍵字雨刷疏水薄膜溶膠凝膠超音波噴塗

P103

29

SiO2 hydrophobic films by ultrasonic spray technique

and Integration of intelligent stealth wipers

Chien-Wen Lai Che-Chun Lin Jung-Jie Huang Ta-hsiang Hu and Feng-Chia Chuang

Department of Electrical Engineering DaYeh University

No 112 Shanjiao Rd Dacun Changhua Taiwan 51591 ROC

ABSTRACT

In the study the self-cleaning coating of SiO2 film is coated on surface of side view

mirror by ultrasonic spray and Materials and Electric Machine is combined to make complete

the intelligent invisible wipers In the project we used the Sol-Gel method to synthesize

organicinorganic composites SiO2 Sol-Gel of three-dimensional bonded structure by TEOS

have hydrolysis and condensation in the water and during reduce the SiO2 particles process

the hydrophilic monomer was added to the solution Intelligent invisible wipers with

self-cleaning and anti-reflective function while taking advantage of the pressing means of gas

and water to strengthen the self-cleaning film clean ability Because self-cleaning film uses

nanotechnology has light weight small size low energy consumption using less material to

achieve better physical properties chemical properties and functionality reducing damage to

the environment Pressurized spray device is to use the existing wiper sprayer to make

improvements no special installation Therefore it is an important development issues in line

with both economic and environmental

Key Words wipers hydrophobic films sol-gel method ultrasonic spray

30

大數據特徵選取的效能比較

陳木松 1 王萱鍢 2 李世鴻 1 1 大葉大學電機系

彰化縣大村鄉學府路168號 2 中州科技大學電機與能源科技

彰化縣員林市山腳路三段 2 巷 6 號

摘要

近年來有關大數據議題的日益盛行也引發如何減少大數據資料維度的研究希望加速資料處理的速度與資料分類的效率事實上資料維度的減少是屬於前處理的步驟藉以減少隨機變數的個數進而萃取資料數據的主要成分或是特徵因此資料維度的減少不僅可以加速資料處理也可以實際提高資料分類的準確度本研究將探討幾種常用的資料特徵選擇的方法包括過濾式(Filter)與封裝式(Wrapper)的方法並且比較其效能其中過濾式的方法是藉由距離或耦合度量度資訊內容評估資料特徵子集合的優劣另一方面封裝式的方法則是運用機器學習法則尋找具最佳效能的資料特徵子集合所以封裝式的方法需要較多的計算時間但也可以得到較佳的分類結果由於封裝式的方法需要配合學習法則又可分為監督式與非監督式二種前者包括費雪線性判別分析(Fisher linear discriminant analysis)與神經網路等後者有包括主值分析(principle components analysis)奇異值分解(singular value decomposition)與獨立成分分析(independent components analysis)等根據實驗結果顯示封裝式的特徵選擇方法可以得到比較高的分類結果關鍵詞大數據資料特徵選擇過濾式封裝式

P104

31

Performance Comparisons of Feature Selections for Big

Data


2 Shih-Fong Lee

1


510 Changhua Taiwan 2Dept of Electrical and Energy Technology Chung Chou University of Science and


Abstract

The recent explosion of big data size has prompted the development of feature

dimension reduction to facilitate the further data processing and classification In fact

dimension reduction is the pre-processing approach of reducing the number of random

variables under consideration via obtaining a set of principal variables or features Therefore

dimension reduction is not only useful to speed up execution but actually might help with the

final classificationclustering accuracy as well In this study we explore some commonly used

techniques for this issue including filter method and wrapper method and compare their

performances The filter method evaluates feature subsets by their information content using

distance measures correlation measures etc On the other hand the wrapper based techniques

use a machine learning algorithm to find the feature subset with the best performance

Certainly the wrapper method requires more computation costs but results in more accurate

consequences Since the wrapper method relies on learning schemes it can be divided into

supervised and unsupervised strategies The former one includes Fisher linear discriminant

analysis and neural networks while the later one includes principle components analysis

singular value decomposition and Independent components analysis etc The experimental

results illustrate that the wrapper method for feature selection can lead to higher classification

rates

Key words Big data Dimension reduction Filter Method Wrapper Method

32

運用深度學習於圖像辨識

陳木松 1 王萱鍢

2 李世鴻

1

1 大葉大學電機系

彰化縣大村鄉學府路 168 號 2 中州科技大學電機與能源科技系


摘要圖像辨識需要明確且有意義的輸入資料為基本要件然而真實的資料如影像或影音等多數屬於複雜多變且可能包含冗餘的資訊內容因此輸入資料必須能夠預先擷取有效的特徵以供後續的處理與識別然而傳統的特徵擷取必須具備相關的知識以大量人工的方式介入產生再作驗證基於以上的敘述研究有效的自動特徵擷取並運用後續的圖像辨識是本文的研究動機近年來深度學習以其感受視野(receptive field)的權值共享及失真不變的池操作(pooling operations)特性現已廣泛運用於挖掘輸入資料的內涵而且成功地使用於圖像辨識文字識別或語音辨識等不同領域所以深度學習以其多層的網路架構對於輸入資料作多層次的抽象呈現並試圖解釋資料的內涵本文的研究主要以深度學習的觀念應用於電腦視覺的問題尤其是對於手寫阿拉伯數字驗證其辨識的效率關鍵詞大數據圖像辨識特徵擷取

P105

33


Mu-Song Chen 1 Hsuan-Fu Wang

2 Shih-Fong Lee

1




Abstract

In pattern recognition or classification task it always requires that input data is

mathematically and computationally convenient to process However real-world data such as

images video and sensor measurement is usually complex redundant and highly variable

Thus it is necessary to discover useful features or representations from raw data

Unfortunately traditional hand-crafted features often involve expensive human labor and rely

on engineering skill and domain expertise This motivates the design of efficient feature

learning techniques to automate and generalize the classification issue Recently deep

learning with its particular structure including the notion of receptive fields via weights

sharing and distortion invariance with pooling operations has been demonstrated to be

effective both at uncovering underlying structure in data and has been successfully applied to

a large variety of problems ranging from image classification to natural language processing

and speech recognition Deep learning algorithms attempt to learn multi-level representations

of data in multiple layers of increasing abstraction embodying a hierarchy of factors that may

explain them In this study we demonstrate how the deep learning algorithm can be applied

for computer vision problems particularly to isolated character recognition and handwriting

recognition

Key words Deep Learning Pattern Recognition Feature Extraction

34

卷積神經網路的特性分析


2 黃其冸

3

1 大葉大學電機系彰化縣大村鄉學府路 168 號 2 中州科技大學電機與能源科技系彰化縣員林市山腳路三段 2 巷 6 號

3 彰化師範大學電子系彰化市師大路二號

摘要卷積神經網路(convolutional neural network CNN)是由許多的卷積層與池化層串聯最後再以全連接層方式所構成的神經網路在卷積層卷積運算元是以移動視窗在輸入區域作點對點的乘積加總而這個移動視窗也稱為核濾波器或特徵探測器另一方面池化層主要是減採樣(subsample)其輸入因此可以大幅減少輸入資料量及

網路參數的運算與更新時間同時也降低過擬合發生的機率常用的池化運算元是以取最大值為主卷積層與池化層的功能使得卷積神經網路具有位置不變與組成性的特性位置不變是因為濾波器是以視窗的方式移動於輸入區域所以任何特定的物件可以被偵測得到另外每一濾波器是構成區域性的低階特徵這些低階特徵再組成高階的特徵以圖像識別為例圖像的原始輸入是像素藉由相鄰像素組成線條再由多個線

條組成紋理進一步形成特定圖像所以卷積神經網路以低層次表達的基礎經由線性或者非線性組合然後重複這個過程最後得到高層次的表達因此卷積神經網路也常被應用於圖像識別或是機器視覺的領域關鍵詞卷積神經網路卷積池化

P106

35

Characteristic Analysis of the Convolutional Neural

Network


2 Chi-Pan Hwang

3



Technology510 Changhua Taiwan 3Department of Electronic Engineering National Changhua University of Education No2

Shi-Da Road Changhua City Taiwan

Abstract

The convolutional neural network (CNN) usually consists of a number of convolutional and

pooling layers and then followed by one or more fully connected layers as in a standard

multilayer neural network The operation of convolution is by thinking of it as a sliding

window function applied to its input The sliding window is called a kernel filter or feature

detector On the other hand pooling layers subsample their input Its function is to

progressively reduce the spatial size of the representation to reduce the amount of parameters

and computation in the network and hence to also control overfitting The most common

way to do pooling it to apply a max operation to the result of each filter The operations of

convolution and pooling lead to two important aspects of the CNN ie location invariance

and compositionality The property of location invariance comes from the fact that the filter

is sliding over the whole image Any specific object can be possibly identified Furthermore

each filter composes a local patch of lower -level features into higher-level representation It

makes intuitive sense that the CNN can build edges from pixels shapes from edges and

more complex objects from shapes These distinct features make CNNs so powerful in the

field of image classification

Key words Convolutional Neural Network Convolution Pooling

36


之特徵表述

范榮權黃名以李世鴻陳木松

大葉大學電機工程學系彰化縣大村鄉學府路 168號

摘要

在本研究中我們開發一種藉由氣相液相固相(VLS)機制成長具有不同直徑氮

化鎵(GaN)奈米線的方法在氮化鎵藍寶石基板上沉積一層5~15 nm的金膜以作為奈米

線成長的催化劑氮化鎵奈米線的合成是在一高溫爐管之中來進行流速100sccm的氬氣流被導入爐管之中合成溫度與壓力分別是1000ordmC與1 atm這種合成方法相當簡單

且可控制可被使用來大規模合成各種奈米線我們使用X射線繞射儀(XRD)及以場發射掃描式電子顯微鏡(FESEM)來表述觀察氮化鎵奈米線的特徵對所成長的奈米線分析

顯示奈米線的直徑約在148至180 nm之間而長度可達數微米顯示具有相當高之高

寬比金膜厚度與奈米線直徑之間有很強的關聯性我們使用X射線繞射儀來檢驗氮化鎵奈米線所有特徵峰都得到對應並被指明為具有wurtzite結構關鍵詞氮化鎵奈米線氣相液相固相(VLS)機制

P107

37

Characterization of Gallium Nitride Nanowires Synthesized by a

Vapor-Liquid-Solid Mechanism

Jung-Chuan Fan Ming-Yi Huang Shih-Fong Lee and Mu-Song Chen



Abstract

In this work a deposition method was developed to prepare gallium nitride (GaN)

nanowires with different diameters by vapor-liquid-solid mechanism GaN nanowires have

been successfully synthesized on the GaNSapphire substrates deposited a gold film In this

work a gold film of 5~15 nm in thickness was deposited onto the surfaces of GaNSapphire

substrate as the catalyst metal for nanowires growth The synthesis of GaN nanowires was

carried out in a high-temperature tube furnace Argon with a flow rate of 100 sccm was

introduced into the tube The synthesis temperature and pressure were about 1000ordmC and 1

atm respectively This synthesis method is simple and controllable it may be useful in

large-scale synthesis of various nanowires The GaN nanowires were characterized by X-ray

diffraction (XRD) and field-emission scanning electron microscopy (FESEM) Analysis of a

number of the nanowires shows that the diameters of nanowires vary from 148 to 180 nm and

the lengths are up to several micrometers indicating a high aspect ratio There appears to be

strong correlation between the thickness of Au film and the diameter of the nanowires The

samples were examined with X-ray diffraction meter all of the diffraction peaks were

indexed and identified as the hexagonal wurtzite structure

Key words gallium nitride (GaN) nanowires vapor-liquid-solid (VLS)

38


鍾耀賢 1 楊茹媛 1

翁敏航 2 藍样文 3

張守進 3

1國立屏東科技大學材料工程研究所 2金屬工業研究發展中心醫療器材與光電設備處

3國立成功大學微電子工程研究所

屏東縣內埔鄉學府路一號

摘要

本研究為使用牛皮明膠為主體配合油有機-無機複合材料等原料形成仿生材

料此仿生材料相似多種在人體不同部位的生物組織藉由改變奈米碳管木質素摻雜的

比例並在頻率範圍 500 MHz 至 20 GHz之間進行微波量測探討牛皮明膠的介電常

數和導電率特性摻雜劑對介電特性的長期穩定性也在本研究中討論

關鍵詞仿生假體明膠介電特性奈米碳管木質素

Microwave dielectric properties of leather gelatin phantom

material doped with carbon nanotube and lignin

Yaoh-Sien Chung1 Ru-Yuan Yang

1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3

1 Graduate Institute of Materials Engineering National Pingtung University of Science and

Technology 2Medical Devices and Opto-Electronics Equipment Department

Metal Industries Research and Development Center 3Department of Electrical Engineering and Advanced Optoelectronic Technology Center

Institute of Microelectronics

Abstract

This study used the leather gelatinoil composite materials to form the biomimetic

materials These biomimetic materials can mimic many different biological tissues of the

body With doping carbon nanotubelignin the materials were measured in the microwave

frequency range between 500 MHz to 20 GHz to find the trend of characteristics of dielectric

constant and conductivity Effect of dopants on the dielectric characteristics and long-term

stability was also discussed in this study

Key Words Phantom gelatin dielectric properties carbon nanotube lignin

P108

39


李義剛1許育瑋2許恆耀3栗慧4




4常州工學院機械與車輛工程學院

摘要

本研究係將奈米級氮化硼(BN)添加在BNi-2填料金屬來改善316L不銹鋼之真空硬銲

銲件的熱傳導性質實驗結果顯示隨著BN的比例增加銲件的熱傳導速率也會隨著

增加然而當達到1wt以上時BN會在銲縫中心大量的聚集而導致浸蝕時大量的被

剝落造成銲縫出現明顯的孔洞此種大量堆聚的現象會使銲件無法順利完全被接合

而且添加BN亦會誘發銲縫中心之金屬間化合物析出且堆積量增加使形成連續帶狀

組織此時銲縫中心的硬度大幅提升造成和母材間的硬度差異擴大剪切測試時會

在該處形成微裂縫直到破斷當添加BN比例增加時剪切強度有降低的趨勢熱傳

導實驗結果發現添加BN確實有提升的效果添加比例為005wt的銲件明顯的提升約

82

關鍵詞316 L氮化硼銲縫真空硬銲熱傳導

P109

40

Effect of Addition of Boron Nitride(BN) on the Thermal

Conductive Property of 316L Brazing Weld

Li Yi Gang1Xu Yu Wei

2 Xu Heng Yao

3 Su Hui

4

1Department of Materials and Engineering of Da-Yeh University TW

2Curriculum of Design and Materials for Medical Equipment and Devices of Da-Yeh

University TW

3 Curriculum of Design and Materials for Medical Equipment and Devices of Da-Yeh

University TW

4Mechanical and Vehicular Engineering College of Changzhou Institute of Technology

Abstract

The study adds the nanoscale BN to the filler metal of BNi-2 to improve the thermal

conduction property of vacuum brazing welding compositions of 316L stainless steel The

experimental result shows that With the increase of BN ratio the thermal conductive rate of

welding compositions will increase However as it is over 1wt BN aggregates abundantly

in the center of weld and that causes a large number of peelings as etching As a result

apparent holes appear in the weld The phenomenon of mass aggregation causes the welding

compositions fail to be jointed completely Furthermore the addition of BN can induce the

precipitation of intermetallic compounds(IMC) which are in the center of weld and increase

the packing quantity forming continuous banded textures By this time the hardness in the

center of the weld is increased sharply This enlarges the hardness difference between the

weld and the base metal As the shearing test is conducted the microcracks are formed on the

position until break down When the ratio of addition of BN is increased the shearing

strength is inclined to depress The experimental result about thermal conduction show that

the addition of BN can promote the property indeed and the property of welding compositions

of which addition ratio is 005wt is almost promoted by 82

Keywords 316L Boron Nitride(BN) weld vacuum brazing thermal conduction

41



李義剛 1許恆耀 2栗慧 3

1 大葉大學材料與工程學系

2 大葉大學醫療器材設計與材料碩士學位學程 3 常州工學院機械與車輛工程學院

鎳基超合金為渦輪引擎主要材料其製造程序中常會使用真空硬銲技術來確保銲件有優良的製造品質本研究

係在填料金屬加入奈米級石墨烯藉由改變添加量來探討鎳基超合金 Inconel 718 之銲縫的顯微組織和機械性質影

響研究結果發現原銲縫中間有連續狀金屬間化合物聚集且硬度值非常的高然而添加石墨烯的金屬化合物

皆均勻分佈在銲縫內顯示添加石墨烯具有使銲縫均質化的效果而且銲縫中心的硬度值更是大幅度的降至和母

材相近若添加達 07wt石墨烯的銲縫會有孔洞形成添加 03wt石墨烯之銲件則有最高剪切強度約為 3908

MPa提升約 3的強度另外添加少量石墨烯亦有助於銲縫寬度變窄的效果




by Vacuum Brazing

K Lee1S H Yao

2Su Hui3


2Master Program of Design and Material for Medical Equipment and Devices Da-Yeh University 3Mechanical and Vehicular Engineering College of Changzhou Institute of Technology

Nickel-based superalloy is the major material of turbine engine During its manufacturing process vacuum brazing

technology is usually applied to ensure the excellent quality of weldments Through adding nano-graphene to the filler metal

and changing the volume of addition this study discusses its influence on the microstructures and mechanical properties of

Inconel 718 weldment The result finds out that there are continuous intermetallic compounds gathering in the original brazed

seam with high hardness value However after adding the graphene the intermetallic compounds become equally distributed

in the brazed seam which means graphene has effect on the homogenization of brazed seam Besides the hardness value of

the brazed seam center has sharply reduced to a level close to the base metal If the volume of addition reaches 07 wt

there will be holes forming in the graphene brazed seam if it is 03wt the maximum shear strength of the graphene

weldment will be about 3908 MPa increasing by nearly 3 Moreover adding a little graphene also has effect on narrowing

the width of brazed seam

Keywords Graphene Nickel-based superalloy Inconel 718 Vacuum Brazing Homogenization

P1010

42


黃楚雯姚品全

大葉大學材料科學及工程學系

摘要

本研究擬利用 Titanium(IV) isopropoxide 與 Degussa P25 TiO2為原料製作溶膠-凝膠

法的鍍膜液以濕式鍍膜方式塗佈於高分子(ABS 塑膠)基板使其具有光催化活性考

量 ABS 不耐高溫與低表面張力的特性先於高分子基板做表面處理再塗佈一層水性高

分子做為保護層與黏著劑最後再塗佈一層鍍膜液探討高分子(ABS 塑膠)基板表面

改質的影響使用 SEM與 AFM進行分析

關鍵字二氧化鈦光觸媒高分子

P110

43


陳兆南 1 黃俊杰 2 徐昌業 1 林哲群 3吳怡嫻 4

1亞洲大學資訊工程系 2大葉大學電機工程學系

3中興大學材料科學與工程學系

4財團法人精密機械研究發展中心

摘要

本研究自潔塗層以無機薄膜為材料藉由常溫的超音波噴塗法直接均勻噴塗於紫外光

臭氧改質後的玻璃基材上使自潔塗層能夠具備更佳之機械特性及物理性質去增加應用

範圍由於無機二氧化矽自潔薄膜富含有大量的氫氧自由基親水官能基使得薄膜隨著

使用時間的增加而降低親水性能且有較佳的機械性質如硬度磨耗特性等二氧化

矽溶膠凝膠的合成中使用矽酸四乙酯(TEOS)為反應的前驅物溶於乙醇後加入水使溶液

產生水解反應其中乙醇的主要作用並非與 TEOS 產生水解反應而是為稀釋前導液的濃

度避免由溶膠形成凝膠的濃度太濃其合成原理乃是利用 TEOS 溶於水時具有水解與

縮合特性可以將 TEOS 水解的單體互相聚合產生縮合反應還原成二氧化矽粒子形

成三度空間鍵結的結構親水薄膜最佳參數以添加 30 mL EtOH 有最佳薄膜品質經退

火 100後水接觸角可達 45 o表面粗糙度為 104 nm由此利用超音波噴塗法可獲得

良好品質的二氧化矽薄膜和超親水自潔特性並符合現今產業界所需求大面積低成本

及高效能的目標

關鍵詞親水薄膜二氧化矽溶膠凝膠法超音波噴塗

P111

2


Nanometer-Scale Technology and Materials Symposium 2016

為促進奈米尺度技術與奈米尺度材料相關領域之研究與學術交流並協助人

才之培育自 2005 年起大葉大學每年舉辦本研討會藉由相關研究之發表與討

論分享更加充實與增進彼此的知識

舉辦時間2016 年 11 月 18 日（周五）

舉辦地點大葉大學工學大樓六樓會議廳 H613 室

主辦單位大葉大學材料科學與工程學系電機工程學系

指導單位行政院科技部

議程主席范榮權

籌備委員李得勝陳昭翰范榮權宋皇輝李世鴻姚品全

李弘彬連水養李義剛廖芳俊賴峰民王偉凱

大會邀請演講

游志文教授（大葉大學分子生物科技學系）

Plant biotechnologyndashfrom basic research to industrial applications

吳憲昌教授（國立彰化師範大學物理學系）

Shape-controlled nanopores using a low intensity electron beam and its applications

游智勝教授（財團法人國家實驗研究院儀器科技研究中心生醫平台

與育成組）


曾耀霆教授（國立屏東大學應用物理系）

UpConversion NanoParticles (UCNPs) and Its Applications

工作團隊曾偉毓劉子豪林宜憲王楨傑吳承諺李宗哲蔡育哲

黃名以李明儒顏光逸楊名展江聖瑋黃郁晟陳柏維何信威

聯絡人

范榮權教授


大葉大學電機工程學系材料科學與工程學系

電話(04) 851-1888 轉 2178 傳真(04) 851-1280

3

目錄





4

5



0920 ～ 0930 開幕致詞

0930 ～ 1020





1020 ～ 1030 休息

1030 ～ 1120





1130 ～ 1210




1210 ～ 1340 午餐壁報展示

1340 ～ 1430




Applications

1430 ～ 1500 休息壁報展示

6

1500 ～ 1515



任泰欣



黃建愷

1530 ～ 1545



李佳諭劉桂萍

1545 ～ 1600



黃名以

1600~1625 閉幕

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

3

目錄





4

5



0920 ～ 0930 開幕致詞

0930 ～ 1020





1020 ～ 1030 休息

1030 ～ 1120





1130 ～ 1210




1210 ～ 1340 午餐壁報展示

1340 ～ 1430




Applications

1430 ～ 1500 休息壁報展示

6

1500 ～ 1515



任泰欣



黃建愷

1530 ～ 1545



李佳諭劉桂萍

1545 ～ 1600



黃名以

1600~1625 閉幕

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

4

5



0920 ～ 0930 開幕致詞

0930 ～ 1020





1020 ～ 1030 休息

1030 ～ 1120





1130 ～ 1210




1210 ～ 1340 午餐壁報展示

1340 ～ 1430




Applications

1430 ～ 1500 休息壁報展示

6

1500 ～ 1515



任泰欣



黃建愷

1530 ～ 1545



李佳諭劉桂萍

1545 ～ 1600



黃名以

1600~1625 閉幕

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

5



0920 ～ 0930 開幕致詞

0930 ～ 1020





1020 ～ 1030 休息

1030 ～ 1120





1130 ～ 1210




1210 ～ 1340 午餐壁報展示

1340 ～ 1430




Applications

1430 ～ 1500 休息壁報展示

6

1500 ～ 1515



任泰欣



黃建愷

1530 ～ 1545



李佳諭劉桂萍

1545 ～ 1600



黃名以

1600~1625 閉幕

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

6

1500 ～ 1515



任泰欣



黃建愷

1530 ～ 1545



李佳諭劉桂萍

1545 ～ 1600



黃名以

1600~1625 閉幕

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

7

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

8


游志文

摘要
















L1

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

9



Cen-Shawn Wu1


1 Jun Wei Huang

2 and Rui-Zhi Su

1


Taiwan


Taiwan

Abstract



















L2

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

10


游智勝


摘要








L3

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

11


Applications

曾耀霆


摘要











L4

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

12

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

13


任泰欣 2




摘要













度

O71

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

14




1 Tai-XinRen

2




Abstract
















15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

15



1 林泱蔚

1














降解

O101

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

16




1


City Taiwan

Abstract





















17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

17






摘要











O102

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

18




摘要


O103

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

19


by a SLS Mechanism



Abstract



















20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

20

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

21

領域





5 奈米碳管

6 奈米粉末





22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

22


P21


P22


P23


AMORPHOUS SILICON

P41


P42


P51


P61


P62


P63


P64


P71


P72


P73


P74


P75


P76


23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

23

P77


P78


P79


P91


P92


P101


P102


P103


P104


P105


P106


P107


P108


P109


P1010


P110


P111


24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

24


劉漢忠



摘要














P21

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

25


HAN-CHUNG LIU




ABSTRACT

















26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

26


林穎巧林泱蔚



摘要


2+ndashAu



P22

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

27





City Taiwan

Abstract















Hg2+




ion





1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

1





摘要










1 Huang-Huei Sung












circumstance


P23

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

2



摘要



















P41

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

3




摘要




菌





P42

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

4




摘要








1 Huang-Huei Sung

2and Shih-Fong Lee

1



Abstract










quasi-semiconductor


P51

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

5


和其性質研究




摘要











P61

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

6


Process



Technology


Abstract





















7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

7






摘要













P62

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

8


Sol-Gel Process



Technology


Abstract

















9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

9





摘要













P63

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

10





and Technology


ABSTRACT


















11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

11





摘要












Reactor




Abstract












density

P64

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

12





摘要









P71

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

13


廖政儒王耀德



摘要












P72

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

14















P73

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

15



by Vacuum Brazing

K Lee1S H Yao

2

















16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

16



范榮權 3



摘要




影響






c




51591 Taiwan


Abstract







metal overlayer

P74

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

17





摘要






能帶發射



ZnO



c




51591 Taiwan


Abstract










P75

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

18



摘要





P76

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

19


張家瑋李得勝
















1



Abstract

















Magnetometer(VSM)

P77

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

20


李得勝














bulk

Der-Sheng Lee



Abstract















P78

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

42


黃楚雯姚品全


摘要







P110

43






摘要














P111

21




摘要








System



Abstract










subbands


P79

22


劉漢忠



摘要









P91

23


HAN-CHUNG LIU




ABSTRACT













24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

3 and Shoou-Jinn

Chang3





Abstract








P108

39







摘要









82


P109

40




2 Xu Heng Yao

3 Su Hui

4



University TW


University TW


Abstract

















41















by Vacuum Brazing

K Lee1S H Yao

2Su Hui3














P1010

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P91

23


HAN-CHUNG LIU




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24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



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ABSTRACT








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29






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摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



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1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


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3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

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Chang3





Abstract








P108

39







摘要









82


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40




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4



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41















by Vacuum Brazing

K Lee1S H Yao

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P1010

42


黃楚雯姚品全


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P110

43






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P111

23


HAN-CHUNG LIU




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24




摘要


P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





質的情形







ABSTRACT








P102

28






摘要












P103

29






ABSTRACT















30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


2 Chi-Pan Hwang

3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

2 Siang-Wen Lan

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Abstract








P108

39







摘要









82


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40




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41















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42


黃楚雯姚品全


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P110

43






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P111

24




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P92

25



2 Chi-Pan Hwang

3





Abstract

















Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





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ABSTRACT








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28






摘要












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29






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30





摘要


P104

31


Data


2 Shih-Fong Lee

1




Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

1




Abstract
















recognition


34



2 黃其冸

3






P106

35


Network


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3





Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

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Abstract








P108

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82


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40




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41















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42


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P110

43






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2 Chi-Pan Hwang

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Sampling

26




摘要







Abstract











P101

27



蘇春熺邱羿源



摘要





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28






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29






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30





摘要


P104

31


Data


2 Shih-Fong Lee

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Abstract

















rates


32



2 李世鴻

1





P105

33



2 Shih-Fong Lee

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Abstract
















recognition


34



2 黃其冸

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Abstract

















36


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摘要







P107

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Abstract

















38




張守進 3




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1 Min-Hang Weng

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82


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28






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29






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30





摘要


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31


Data


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rates


32



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33



2 Shih-Fong Lee

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Abstract
















recognition


34



2 黃其冸

3






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35


Network


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Abstract

















36


之特徵表述



摘要







P107

37






Abstract

















38




張守進 3




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82


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41















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42


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29






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摘要


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31


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rates


32



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33



2 Shih-Fong Lee

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recognition


34



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Network


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36


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38




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82


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41















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42


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30





摘要


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31


Data


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rates


32



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1





P105

33



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Abstract
















recognition


34



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3






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35


Network


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Abstract

















36


之特徵表述



摘要







P107

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Abstract

















38




張守進 3




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82


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40




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42


黃楚雯姚品全


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摘要


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31


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rates


32



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33



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recognition


34



2 黃其冸

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35


Network


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Abstract

















36


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摘要







P107

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Abstract

















38




張守進 3




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82


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41















by Vacuum Brazing

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42


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rates


32



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33



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recognition


34



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Network


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Abstract

















36


之特徵表述



摘要







P107

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Abstract

















38




張守進 3




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rates


32



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recognition


34



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36


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P107

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Abstract

















38




張守進 3




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recognition


34



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35


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36


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38




張守進 3




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P108

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82


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40




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41















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42


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recognition


34



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36


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Abstract

















38




張守進 3




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41















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36


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38




張守進 3




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82


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41















by Vacuum Brazing

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38




張守進 3




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1 Min-Hang Weng

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P108

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82


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38




張守進 3




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P108

39







摘要









82


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41















by Vacuum Brazing

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42


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Abstract

















38




張守進 3




摘要









1 Min-Hang Weng

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P108

39







摘要









82


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40




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4



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41















by Vacuum Brazing

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P111

38




張守進 3




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P108

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82


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40




2 Xu Heng Yao

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4



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41















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P111

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82


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4



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41















by Vacuum Brazing

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黃楚雯姚品全


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41















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摘要







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P111

42


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2016 年奈米技術與材料研討會 - nano.dyu.edu.twnano.dyu.edu.tw/2016abstract/2016nano.pdf · 黃名以、李明儒、顏光逸、楊名展、聖瑋、黃郁晟、陳柏維