2SK2926(L), 2SK2926(S)

Silicon N Channel MOS FETHigh Speed Power Switching

ADE-208-5351st. Edition

Features

• Low on-resistance

RDS(on) = 0.042Ω typ.

• 4V gate drive devices.

• High speed switching

Outline

1 2 3

4 4

1 2 3

1. Gate2. Drain3. Source4. Drain

DPAK–2

D

G

S

2SK2926(L), 2SK2926(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS ±20 V

Drain current ID 15 A

Drain peak current ID(pulse)*1 60 A

Body to drain diode reverse drain current IDR 15 A

Avalanche current IAP*3 15 A

Avalanche energy EAR*3 19 mJ

Channel dissipation Pch*2 25 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %2. Value at Ta = 25°C3. Value at Ta = 25°C, Rg ≥ 50 Ω

2SK2926(L), 2SK2926(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdownvoltage

V(BR)DSS 60 — — V ID = 10mA, VGS = 0

Gate to source breakdownvoltage

V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0

Zero gate voltege draincurrent

IDSS — — 10 µA VDS = 60 V, VGS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V

Static drain to source on state RDS(on) — 0.042 0.055 Ω ID = 8A, VGS = 10V*1

resistance RDS(on) — 0.065 0.11 Ω ID = 8A, VGS = 4V*1

Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V*1

Input capacitance Ciss — 500 — pF VDS = 10V

Output capacitance Coss — 260 — pF VGS = 0

Reverse transfer capacitance Crss — 110 — pF f = 1MHz

Turn-on delay time td(on) — 10 — ns VGS = 10V, ID = 8A

Rise time tr — 80 — ns RL = 3.75Ω

Turn-off delay time td(off) — 100 — ns

Fall time tf — 110 — ns

Body to drain diode forwardvoltage

VDF — 1.0 — V IF = 15A, VGS = 0

Body to drain diode reverserecovery time

trr — 55 — ns IF = 15A, VGS = 0

diF/ dt = 50A/µs

Note: 1. Pulse test

2SK2926(L), 2SK2926(S)

4

Main Characteristics

40

30

20

10

0 50 100 150 200

1000

300

100

30

3

10

0.1 0.3 1 3 10 30 100

20

16

12

8

4

0 2 4 6 8 10

20

16

12

8

4

0 1 2 3 4 5

0.3

0.1

1

10 µs1 ms

PW = 10 ms (1shot)

Ta = 25°C

100 µs

10 V

Cha

nnel

Dis

sipa

tion

P

ch (

W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)DS

Dra

in C

urre

nt

I

(A

)D

Maximum Safe Operation Area

Drain to Source Voltage V (V)DS

Dra

in C

urre

nt

I

(A

)D

Typical Output Characteristics

Gate to Source Voltage V (V)GS

Dra

in C

urre

nt

I

(

A)

D

Typical Transfer Characteristics

Operation inthis area islimited by RDS(on)

DC Operation (Tc = 25°C)

6 V 5 V

3.5 V

4 V

3 V

V = 2.5 VGS

Pulse Test

4 .5 V

Tc = 75°C

25°C

–25°C

V = 10 VPulse Test

DS

2SK2926(L), 2SK2926(S)

5

2.0

1.6

1.2

0.8

0.4

0 4 8 12 16 20 5 20 1001 10 502

0.20

0.16

0.12

0.08

0.04

–40 0 40 80 120 1600

0.1 0.2 1 5 20

20

2

5

1

0.5

1.0

0.2

0.5

0.1

0.02

0.01

0.05

0.5 2

Gate to Source Voltage V (V)GS

Drain to Source Saturation Voltage vs.Gate to Source Voltage

V

(

V)

DS

(on)

Dra

in to

Sou

rce

Sat

urat

ion

Vol

tage

Drain Current I (A)DD

rain

to S

ourc

e O

n S

tate

Res

ista

nce

R

(

)Ω

DS

(on)

Static Drain to Source on State Resistancevs. Drain Current

Case Temperature Tc (°C)

R

(

)

DS

(on)

Sta

tic D

rain

to S

ourc

e on

Sta

te R

esis

tanc

eΩ

Static Drain to Source on State Resistancevs. Temperature

Drain Current I (A)D

For

war

d T

rans

fer

Adm

ittan

ce |

y

| (S

)fs

Forward Transfer Admittance vs.Drain Current

Pulse Test

10 A

5 A

I = 20 AD V = 4 VGS

Pulse Test

10 V

I = 10 AD

V = 4 VGS

10 V

5 A

Pulse Test

5 A20 A 10 A

10

10

V = 10 VPulse Test

DS

25 °C

Tc = –25 °C

75 °C

2SK2926(L), 2SK2926(S)

6

0.1 0.5 1 2 100.2 5 0 10 20 30 40 50

1000

200

500

100

10

20

50

100

80

60

40

20

0

20

16

12

8

4

8 16 24 32 4000

1000

300

100

30

10

0.1 0.2 1 5 10

V = 10 V25 V50 V

DD

V = 50 V25 V10 V

DD

500

200

100

20

50

10

5

2000

V = 0f = 1 MHz

GS

Ciss

Coss

Crss

I = 15AD

VGSVDS

3

10.5 2

Reverse Drain Current I (A)DR

Rev

erse

Rec

over

y T

ime

trr

(ns

)

Body to Drain Diode ReverseRecovery Time

Cap

acita

nce

C (

pF)

Drain to Source Voltage V (V)DS

Typical Capacitance vs.Drain to Source Voltage

Gate Charge Qg (nc)

Dra

in to

Sou

rce

Vol

tage

V

(V

)D

S

Gat

e to

Sou

rce

Vol

tage

V

(V

)G

S

Dynamic Input Characteristics

Drain Current I (A)D

Sw

itchi

ng T

ime

t (

ns)

Switching Characteristics

20

20

rt

V = 10 V, V = 30 VPW = 5 µs, duty < 1 %

GS DD

t f

d(on)t

d(off)t

di / dt = 50 A / µsV = 0, Ta = 25 °CGS

2SK2926(L), 2SK2926(S)

7

50

40

30

20

10

0 0.4 0.8 1.2 1.6 2.0

V = 0, –5 VGS

10 V

5 V

200

160

120

80

40

25 50 75 100 125 1500

Channel Temperature Tch (°C)R

epet

ive

Ava

lanc

he E

nerg

y E

(m

J)A

R

Maximum Avalanche Energy vs.Channel Temperature Derating

D. U. TRg

IMonitor

AP

VMonitor

DS

VDD

50ΩVin 15 V

0

I D

VDS

I AP

V(BR)DSS

L

VDD

E = • L • I •21 V

V – VAR APDSS

DSS DD2

Avalanche Test Circuit Avalanche Waveform

Source to Drain Voltage V (V)SD

Rev

erse

Dra

in C

urre

nt

I

(A

)D

R

Reverse Drain Current vs.Source to Drain Voltage

Pulse Test

I = 40 AV = 25 Vduty < 1 %Rg > 50

AP

DD

Ω

2SK2926(L), 2SK2926(S)

8

Vin Monitor

D.U.T.

Vin10 V

R L

V= 30 V

DD

trtd(on)

Vin

90% 90%

10%

10%Vout

td(off)

VoutMonitor

50Ω

90%

10%

tf

Switching Time Test Circuit Switching Time Waveform

3

1

0.3

0.1

0.03

0.0110 µ 100 µ 1 m 10 m 100 m 1 10

DMP

PW

T

D = PWT

ch – c(t) = s (t) • ch – cch – c = 5 °C/W, Tc = 25 °C

θ γ θθ

D = 1

0.5

0.2

0.010.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Pulse Width PW (S)

Nor

mal

ized

Tra

nsie

nt T

herm

al Im

peda

nce

s (

t)γ

Normalized Transient Thermal Impedance vs. Pulse Width

2SK2926(L), 2SK2926(S)

9

Package Dimensions

Unit: mm

6.5 ± 0.55.4 ± 0.5

1.15 ± 0.1

2.3 ± 0.20.55 ± 0.1

2.29 ± 0.50.55 ± 0.1 1.2 typ

1.7

± 0.

55.

5 ±

0.5

3.1

± 0.

5

16.2

± 0

.5

2.29 ± 0.5

6.5 ± 0.55.4 ± 0.5

1.15 ± 0.10.8 ± 0.1

2.3 ± 0.50.55 ± 0.11.

7 ±

0.5

5.5

± 0.

5

9.5

± 0.

52.

5 ±

0.5

2.29 ± 0.5 2.29 ± 0.5

1.2

Max

0.55 ± 0.1

0 ~ 0.25

0.8 ± 0.1

typeL S type

4.7

± 0.

5

HitachiEIAJ ( L type)EIAJ ( S type)

JEDEC

DPAK–2SC–63SC–64

—

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you havereceived the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially highquality and reliability or where its failure or malfunction may directly threaten human life or cause riskof bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document withoutwritten approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductorproducts.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htmAsia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htmAsia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htmJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong KongTel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.

Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: <44> (1628) 585000Fax: <44> (1628) 778322

Hitachi Europe GmbHElectronic components GroupDornacher Stra§e 3D-85622 Feldkirchen, MunichGermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223

For further information write to: