2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FETHigh Speed Power Switching
ADE-208-5351st. Edition
Features
• Low on-resistance
RDS(on) = 0.042Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
1 2 3
4 4
1 2 3
1. Gate2. Drain3. Source4. Drain
DPAK–2
D
G
S
2SK2926(L), 2SK2926(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 15 A
Drain peak current ID(pulse)*1 60 A
Body to drain diode reverse drain current IDR 15 A
Avalanche current IAP*3 15 A
Avalanche energy EAR*3 19 mJ
Channel dissipation Pch*2 25 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %2. Value at Ta = 25°C3. Value at Ta = 25°C, Rg ≥ 50 Ω
2SK2926(L), 2SK2926(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdownvoltage
V(BR)DSS 60 — — V ID = 10mA, VGS = 0
Gate to source breakdownvoltage
V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0
Zero gate voltege draincurrent
IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 0.042 0.055 Ω ID = 8A, VGS = 10V*1
resistance RDS(on) — 0.065 0.11 Ω ID = 8A, VGS = 4V*1
Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V*1
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time td(on) — 10 — ns VGS = 10V, ID = 8A
Rise time tr — 80 — ns RL = 3.75Ω
Turn-off delay time td(off) — 100 — ns
Fall time tf — 110 — ns
Body to drain diode forwardvoltage
VDF — 1.0 — V IF = 15A, VGS = 0
Body to drain diode reverserecovery time
trr — 55 — ns IF = 15A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
2SK2926(L), 2SK2926(S)
4
Main Characteristics
40
30
20
10
0 50 100 150 200
1000
300
100
30
3
10
0.1 0.3 1 3 10 30 100
20
16
12
8
4
0 2 4 6 8 10
20
16
12
8
4
0 1 2 3 4 5
0.3
0.1
1
10 µs1 ms
PW = 10 ms (1shot)
Ta = 25°C
100 µs
10 V
Cha
nnel
Dis
sipa
tion
P
ch (
W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)DS
Dra
in C
urre
nt
I
(A
)D
Maximum Safe Operation Area
Drain to Source Voltage V (V)DS
Dra
in C
urre
nt
I
(A
)D
Typical Output Characteristics
Gate to Source Voltage V (V)GS
Dra
in C
urre
nt
I
(
A)
D
Typical Transfer Characteristics
Operation inthis area islimited by RDS(on)
DC Operation (Tc = 25°C)
6 V 5 V
3.5 V
4 V
3 V
V = 2.5 VGS
Pulse Test
4 .5 V
Tc = 75°C
25°C
–25°C
V = 10 VPulse Test
DS
2SK2926(L), 2SK2926(S)
5
2.0
1.6
1.2
0.8
0.4
0 4 8 12 16 20 5 20 1001 10 502
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 1600
0.1 0.2 1 5 20
20
2
5
1
0.5
1.0
0.2
0.5
0.1
0.02
0.01
0.05
0.5 2
Gate to Source Voltage V (V)GS
Drain to Source Saturation Voltage vs.Gate to Source Voltage
V
(
V)
DS
(on)
Dra
in to
Sou
rce
Sat
urat
ion
Vol
tage
Drain Current I (A)DD
rain
to S
ourc
e O
n S
tate
Res
ista
nce
R
(
)Ω
DS
(on)
Static Drain to Source on State Resistancevs. Drain Current
Case Temperature Tc (°C)
R
(
)
DS
(on)
Sta
tic D
rain
to S
ourc
e on
Sta
te R
esis
tanc
eΩ
Static Drain to Source on State Resistancevs. Temperature
Drain Current I (A)D
For
war
d T
rans
fer
Adm
ittan
ce |
y
| (S
)fs
Forward Transfer Admittance vs.Drain Current
Pulse Test
10 A
5 A
I = 20 AD V = 4 VGS
Pulse Test
10 V
I = 10 AD
V = 4 VGS
10 V
5 A
Pulse Test
5 A20 A 10 A
10
10
V = 10 VPulse Test
DS
25 °C
Tc = –25 °C
75 °C
2SK2926(L), 2SK2926(S)
6
0.1 0.5 1 2 100.2 5 0 10 20 30 40 50
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8 16 24 32 4000
1000
300
100
30
10
0.1 0.2 1 5 10
V = 10 V25 V50 V
DD
V = 50 V25 V10 V
DD
500
200
100
20
50
10
5
2000
V = 0f = 1 MHz
GS
Ciss
Coss
Crss
I = 15AD
VGSVDS
3
10.5 2
Reverse Drain Current I (A)DR
Rev
erse
Rec
over
y T
ime
trr
(ns
)
Body to Drain Diode ReverseRecovery Time
Cap
acita
nce
C (
pF)
Drain to Source Voltage V (V)DS
Typical Capacitance vs.Drain to Source Voltage
Gate Charge Qg (nc)
Dra
in to
Sou
rce
Vol
tage
V
(V
)D
S
Gat
e to
Sou
rce
Vol
tage
V
(V
)G
S
Dynamic Input Characteristics
Drain Current I (A)D
Sw
itchi
ng T
ime
t (
ns)
Switching Characteristics
20
20
rt
V = 10 V, V = 30 VPW = 5 µs, duty < 1 %
GS DD
t f
d(on)t
d(off)t
di / dt = 50 A / µsV = 0, Ta = 25 °CGS
2SK2926(L), 2SK2926(S)
7
50
40
30
20
10
0 0.4 0.8 1.2 1.6 2.0
V = 0, –5 VGS
10 V
5 V
200
160
120
80
40
25 50 75 100 125 1500
Channel Temperature Tch (°C)R
epet
ive
Ava
lanc
he E
nerg
y E
(m
J)A
R
Maximum Avalanche Energy vs.Channel Temperature Derating
D. U. TRg
IMonitor
AP
VMonitor
DS
VDD
50ΩVin 15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E = • L • I •21 V
V – VAR APDSS
DSS DD2
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)SD
Rev
erse
Dra
in C
urre
nt
I
(A
)D
R
Reverse Drain Current vs.Source to Drain Voltage
Pulse Test
I = 40 AV = 25 Vduty < 1 %Rg > 50
AP
DD
Ω
2SK2926(L), 2SK2926(S)
8
Vin Monitor
D.U.T.
Vin10 V
R L
V= 30 V
DD
trtd(on)
Vin
90% 90%
10%
10%Vout
td(off)
VoutMonitor
50Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
3
1
0.3
0.1
0.03
0.0110 µ 100 µ 1 m 10 m 100 m 1 10
DMP
PW
T
D = PWT
ch – c(t) = s (t) • ch – cch – c = 5 °C/W, Tc = 25 °C
θ γ θθ
D = 1
0.5
0.2
0.010.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Pulse Width PW (S)
Nor
mal
ized
Tra
nsie
nt T
herm
al Im
peda
nce
s (
t)γ
Normalized Transient Thermal Impedance vs. Pulse Width
2SK2926(L), 2SK2926(S)
9
Package Dimensions
Unit: mm
6.5 ± 0.55.4 ± 0.5
1.15 ± 0.1
2.3 ± 0.20.55 ± 0.1
2.29 ± 0.50.55 ± 0.1 1.2 typ
1.7
± 0.
55.
5 ±
0.5
3.1
± 0.
5
16.2
± 0
.5
2.29 ± 0.5
6.5 ± 0.55.4 ± 0.5
1.15 ± 0.10.8 ± 0.1
2.3 ± 0.50.55 ± 0.11.
7 ±
0.5
5.5
± 0.
5
9.5
± 0.
52.
5 ±
0.5
2.29 ± 0.5 2.29 ± 0.5
1.2
Max
0.55 ± 0.1
0 ~ 0.25
0.8 ± 0.1
typeL S type
4.7
± 0.
5
HitachiEIAJ ( L type)EIAJ ( S type)
JEDEC
DPAK–2SC–63SC–64
—
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