BU4523AX Philips

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4523AX

GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptionaltolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 800 VIC Collector current (DC) - 11 AICM Collector current peak value - 29 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WVCEsat Collector-emitter saturation voltage IC = 8 A; IB = 2 A - 3.0 VICsat Collector saturation current f = 16 kHz 8 - A

f = 70 kHz 6.5 - Atf Fall time ICsat = 8 A; f = 16 kHz 0.3 0.4 µs

ICsat = 6.5 A; f = 70 kHz 0.14 - µs

PINNING - SOT399 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 base

2 collector

3 emitter

case isolated

LIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 VVCEO Collector-emitter voltage (open base) - 800 VIC Collector current (DC) - 11 AICM Collector current peak value - 29 AIB Base current (DC) - 7 AIBM Base current peak value - 10 A-IBM Reverse base current peak value 1 - 7 APtot Total power dissipation Ths ≤ 25 ˚C - 45 WTstg Storage temperature -55 150 ˚CTj Junction temperature - 150 ˚C

THERMAL RESISTANCES


Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W

Rth j-a Junction to ambient in free air 35 - K/W

case

1 2 3

b

c

e

1 Turn-off current.

May 1998 1 Rev 1.100

http://www.icmade.com



ISOLATION LIMITING VALUE & CHARACTERISTICThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 Vthree terminals to externalheatsink

Cisol Capacitance from T2 to external f = 1 MHz - 22 - pFheatsink

STATIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 1.0 mAICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA

Tj = 125 ˚CIEBO Emitter cut-off current VEB = 6 V; IC = 0 A - - 100 µABVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 12.5 - VVCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V

L = 25 mHVCEsat Collector-emitter saturation voltage IC = 8 A; IB = 2 A - - 3.0 VVBEsat Base-emitter saturation voltage IC = 8 A; IB = 2 A 0.85 0.95 1.1 VhFE DC current gain IC = 1 A; VCE = 5 V - 14 -hFE IC = 8 A; VCE = 5 V 4.2 5.8 7.3

DYNAMIC CHARACTERISTICSThs = 25 ˚C unless otherwise specified


Switching times (16 kHz line ICsat = 8.0 A;IB1 = 1.6 Adeflection circuit) (IB2 = -4.0 A)

ts Turn-off storage time 4.5 5.5 µstf Turn-off fall time 0.30 0.40 µs

Switching times (70 kHz line ICsat = 6.5 A;IB1 = 1.3 Adeflection circuit) (IB2 = -3.9 A)

ts Turn-off storage time 2.3 - µstf Turn-off fall time 0.14 - µs

2 Measured with half sine-wave voltage (curve tracer).

May 1998 2 Rev 1.100



Fig.1. Test circuit for VCEOsust.

Fig.2. Oscilloscope display for VCEOsust.

Fig.3. Switching times waveforms (16 kHz).

Fig.4. Switching times waveforms (70 kHz).

Fig.5. Switching times definitions.

Fig.6. Switching times test circuit.

+ 50v100-200R

Horizontal

Vertical

Oscilloscope

1R

6V30-60 Hz

100R

IC

IB

VCE

ICsat

IB1

14.2us

7.1us2.5us

t

t

t

TRANSISTOR

DIODE

IB2

VCE / V min

VCEOsust

IC / mA

100

200

250

0

ICsat

90 %

10 %

tfts

IB1

IC

IB

t

t

- IB2

IC

IB

VCE

ICsat

IB1

64us

26us20us

t

t

t

TRANSISTOR

DIODE

IB2

+ 150 v nominal adjust for ICsat

Lc

CfbT.U.T.LBIBend

-VBB

May 1998 3 Rev 1.100



Fig.7. High and low DC current gain.

Fig.8. High and low DC current gain.

Fig.9. Typical collector-emitter saturation voltage.

Fig.10. Typical base-emitter saturation voltage.

Fig.11. Typical collector storage and fall time.IC =8 A; Tj = 85˚C; f = 16kHz

Fig.12. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C

0.01 0.1 1 10 1001

10

100

IC / A

hFE

Ths = 25 CThs = 85 C

VCE = 1 V

BU4523AF/X

0 1 2 3 40.6

0.7

0.8

0.9

1

1.1

1.2

IB / A

VBEsat / V

IC = 6.5 A

IC = 8 A


BU4523AF/X

0.01 0.1 1 10 1001

10

100

IC / A

hFE


VCE = 5 V

BU4523AF/X

0 1 2 3 40

2

4

6

8

10

IB / A

ts/tf / us BU4523AF/X 16kHz

ICsat = 8 AThs = 85 CFreq = 16 kHz

ts

tf

0.1 1 10 1000.01

0.1

1

10

IC / A

VCEsat / V


IC/IB = 5

BU4523AF/X

0 20 40 60 80 100 120 140Ths / C

PD% Normalised Power Derating120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

May 1998 4 Rev 1.100



Fig.13. Transient thermal impedance.

Fig.14. Test Circuit RBSOA.

Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax

Fig.16. ICsat during normal running vs. frequency ofoperation for optimum performance

1E-06 1E-04 1E-02 1E+00t / s

Zth / (K/W)

D = 0

0.02

0.050.10.2

0.5

D = tp tp

T

TP

t

D

10

1

0.1

0.01

0.001 100 10000

10

20

30

VCE / V

IC / A

BU2523

1500

0 20 40 60 80 1000

2

4

6

8

10

Horizontal frequency (kHz)

Ic(sat) (A)

1

3

5

7

9

10 30 50 70 90

LBIBend

-VBB

LC

T.U.T.

VCC

VCL

CFB

May 1998 5 Rev 1.100



MECHANICAL DATA

Dimensions in mm

Net Mass: 5.88 g

Fig.17. SOT399; The seating plane is electrically isolated from all terminals.

Notes1. Refer to mounting instructions for F-pack envelopes.2. Epoxy meets UL94 V0 at 1/8".

4.5

16.0 max

0.7

10.0

5.1

27max

18.1min

4.5

2.2 max

1.1

0.4 M

5.45 5.45

25

25.1

3.0

25.7

5.8 max

3.3

0.9 max2

3.3

22.5max

May 1998 6 Rev 1.100



DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

May 1998 7 Rev 1.100

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BU4523AX Philips