CoolMOS, Your Choice for LED/LCD TV - infineon.com Your Choice for LED/LCD TV Jimmy Wang ... B ac klight Inverter 12V output Sys tem & A udio ... 400 500 600 700 800 900 1000

CoolMOS, Your Choice for LED/LCD TV

Jimmy Wang(王进) System application engineer Infineon Technologies China [email protected]

Copyright © Infineon Technologies 2010. All rights reserved.

Bridge

rectifier

Line

filter

ACPFC

Converter

Boost

Multi converter

QR/FF Flyback

Standby

converter

FF Flyback

High voltage

inverter

12V/18V/30V

System and

control

5V

Standby

Bridge

rectifier

Line

filter

ACPFC

Converter

Boost

Main converter

LLC HB

QR Flyback

Standby

converter

QR/FF Flyback

Low voltage

inverter

12V/18V/30V

System and

control

5V

Standby

LCD TV SMPS Structures: PSU and LIPS

PSU

type

LIP

S t

ype


Screen

size

20”

100W

200W

300W

23” 26” 27” 32” 37” 40” 42” 47” 50”

LCD TV SMPS: Topology / Power v.s Screen Size

PSU with QR

PSU with LLC HB

LIPS

PSU types

LIPS types

Output

power

CCM

PFC/

Inte

rleaved D

CM

PFC

DCM

PFC


600V CoolMOSTM

C3/CP

500V CoolMOSTM

C3/CP

Eg.

IPA60R199CP

SPA20N60C3

FF CoolSET

QR CoolSET

8 pin LLC

ICE1HS01G

SiC diode

Eg.

IDT02S60C

IDH02SG60C

PFC Controllers

Eg.

ICE2PCS0X

TDA4863-2PFC

controller

EMI

filter

Half-bridge

controller

5V output

Standby &

Microcontroller

600V CoolMOSTM

C3/CP

500V CoolMOSTM

C3/CP

Eg. SPA07N60C3

IPA50R385CP

AC

PFC pre-regulator

Boost converter

Standby converter

FF flyback converter

Main converter

LLC HB resonant converter

24V output

Backlight Inverter

12V output

System & Audio

controller

LCD TV SMPS: PSU with LLC HB

600V CoolMOS C6/E6/CFD2 IPA60R190E6 IPP65R190CFD

600V CoolMOS C6/E6 IPA60R190E6

CoolMOS

Your choice


LCD TV SMPS: LIPS (HV inverter+Multi+Standby)

600V CoolMOSTM

C3/CP

500V CoolMOSTM

C3/CP

Eg.

IPA60R399CP

IPA50R385CP

600V CoolMOSTM

C3/CP

500V CoolMOSTM

C3/CP

Eg.

IPA60R199CP

SPA20N60C3

SiC diode

Eg.

IDT02S60C

IDH02SG60C

PFC Controllers

Eg.

ICE2PCS01/02

ICE2PCS03/04PFC

controller

EMI

filter

12V/18V for

systerm & Audio

5V for

Standby &

Microcontroller

AC

PFC pre-regulator

Boost converter

Output to Lamps

High voltage inverters

HB resonant inverter

Multi+ Standby converter

FF CoolSET

600V CoolMOSTM

C3/CP

800V CoolMOSTM

C3

Eg.

IPA60R299CP

SPA11N80C3

QR/FF PWM IC

Eg.

ICE2QS01

ICE2QS03G

QR flyback

controllers

Multi+ Standby converter

QR CoolSET

FF CoolSET

12V/18V for

systerm & Audio

5V for

Standby &

MicrocontrollerOR

FF CoolSET new Series F3R

Eg. ICE3BR2565JF

ICE3BR1065JF

12

34

56

Drain

CS

BA

VCC

GND

FB

12

34

56

Drain

CS

BA

VCC

GND

FB

600V CoolMOS C6/E6 IPA60R190E6

600V CoolMOS C6/E6 800V CoolMOS C3 IPA60R190E6

600V CoolMOS C6/E6/CFD2 IPA60R190E6 IPP65R190CFD

CoolMOS

Your choice

Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21 21.10.2011

CoolMOSTM – Technology leader in high voltage MOSFETs

High voltage MOSFET in 500V,

600V, 650V, 800V, and 900V

Offers a significant reduction of

conduction and switching losses

Enables high power density and

efficiency for superior power

conversion systems

Best-in-class price/performance

ratio

A Short Description of CoolMOS™

0

5

10

15

20

25

30

400 500 600 700 800 900 1000

New horizons

for high voltage

applications

Standard MOSFET

Ron x A ~ V(BR)DSS2,4...2,6

CoolMOSTM

Fig.: A near-linear relationship between Rds(on) and V(BR)DSS indicates the significant difference between CoolMOS and conventional MOSFET

Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21

What is CoolMOS™ Technology

On state:

Reduction of resistance of epitaxial layer by high doped n-columns

Higher doping level in n-type drift region results in lower Rds(on)

Blocking state:

Compensation of additional charge by adjacent p-columns

Half of active chip area is covered by p-columns

During blocking state the p-column compensates the charge of the adjacent n-column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit!

Source

Gate

Drain n+

n+

p+

nepi

Standard MOSFET

Source

Gate

Drain n+

n+

p+

pnepi

CoolMOS™

Copyright © Infineon Technologies 2010. All rights reserved. 2011/10/21 21.10.2011

History of CoolMOS™ Product Portfolio from S5 to C6/E6 & CFD2 S5 series: the first series of CoolMOS™, market entry in 1998 slow switching, close to

conventional MOSFET, Vth 4.5 V, Gfs low, Rg high design-in in high power SMPS only

C3 series: the third series of CoolMOS™, market entry in 2001 the „working horse“ of the

portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, Rg very low design-in

into all CoolMOS™ segments

CFD series: the fourth series of CoolMOS™, market entry in 2004, fast body diode, Qrr 1/10th

of C3 series, Vth 4 V, Rg low specific for phase-shift ZVS and DC/AC power applications

CP series: the fifth series of CoolMOS™, market entry in 2005, ultra low Rdson, ultra low gate

charge, very fast switching Vth 3 V, internal Rg very low

C6/E6 series: launched in 2009 and 2010 respectively as the sixth CoolMOS™ technology is

planned to be the successor of C3

CFD2 series: the first 650 V superjunction technology with integrated fast body diode on the

market and also is planned to be the successor of CFD

CoolMOS™ product portfolio

CoolMOS™ is successful in the market since 1998 and created a high quality customer perception

Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011

600V CoolMOSTM C6/E6 - Introduction

CoolMOSTM C6/E6 is the sixth generation of Infineon high voltage power MOSFET´s designed according to the superjunction (SJ) principle

The new 600V C6/E6 portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use

Features: - fast and easy control of switching behavior - high ruggedness in hard commutation of body diode - reduced energy stored in output capacitance (Eoss) - low area specific on-state resistance (Ron*A) - low gate current requirement

Benefits: - fast and easy design-in, less care for peak current conditions, e.g. start-up, load jump - proven CoolMOS™ quality combined with high body diode ruggedness guarantee outstanding reliability - better light load efficiency compared to C3


How to achieve self-limiting di/dt and dv/dt characteristics in C6?

C6 comes with an integrated gate resistor to provide self-limiting behavior.

Benefit of using integrated gate resistor:

allows fast turn on and turn off at normal operating current conditions

limits the di/dt and dv/dt in case of peak current conditions.

relatively low gate driver current.


Switching behavior CoolMOS™ C6/E6……(cont)

cds

cgd

cgs

Ld

Ls

Lg Rg

MOSFET equivalent circuit model

Key requirement to reach ease of use

Similar cgd value of C3

Internal gate resistor (Rg) integration in the die.

Features of internal gate resistor:

Stable switching behavior

Self-limit di/dt and dv/dt

Comparable switching loss to C3

Copyright © Infineon Technologies 2010. All rights reserved. 21.10.2011 2011/10/21

Turn on and turn off behavior CoolMOSTM C6

C6: smooth waveforms

190 mohm parts, 16A, Rg 1.8 ohm, 125°C

Gate

Vds

Id

C6: smooth waveforms disappearing Miller plateau due to integrated Rg

Vds

Gate

Id


0

10

20

30

40

50

60

70

0 5 10 15 20 25

Current IDS [A]

turn

off

, d

v/d

t [V

/ns]

Rg 1.8 Ohm Rg 3.3 Ohm

Rg 6.8 Ohm Rg 13 Ohm

Rg 18 Ohm Rg 33 Ohm

CoolMOSTM C6 does NOT show excessive dv/dt or di/dt! VDS=400V, Tj=125°C, RDSon=190 mohm; Turn Off

C6 di/dt C6 dv/dt

0

100

200

300

400

500

600

700

800

900

1000

0 5 10 15 20 25

Current IDS [A]

turn

off

, d

i/d

t [A

/µs]



Rg 18 Ohm Rg 33 Ohm

C6 self-limits di/dt and dv/dt to less than 65V/ns and less than 1000A/µs Ease of Use for CoolMOS C6 even in parasitic layout environment.


0

10

20

30

40

50

60

70

80

0 5 10 15 20 25

Current IDS [A]

turn

on

, d

v/d

t [V

/ns]



Rg 18 Ohm Rg 33 Ohm

0

500

1000

1500

2000

2500

0 5 10 15 20 25

Current IDS [A]

turn

on

, d

i/d

t [A

/µs]



Rg 18 Ohm Rg 33 Ohm

Similar self-limiting behavior of C6 at turn on as well… VDS=400V, Tj=125°C, RDSon=190 mOhm

Similar friendly behavior for C6 at turn on, no increase of di/dt and dv/dt at peak current conditions!

C6 di/dt C6 dv/dt


External on-board

coupling capacitance

Cgd-ext

Cgs

Cds

Cgd

Rg ext Rg int G

D

S

Resonant

circuit

Lead

inductance

Lead + gate wire

inductance

dv/dt triggered

oscillations

Resonant

circuit

di/dt triggered

oscillations

Disassembling a MOSFET package parasitics – TO-220

Parasitic L C influence at high dv/dt and di/dt !


Basic of LLC operation: hard commutation

High side switch is turned on.

the network will be charged up.

High side switch is turned off.

current will be circulating in the freewheeling (network and Low side switch diode)

When the current still circulating, the high Side Switch is turned on. (this is abnormal operation in LLC topology)

the hard commutation is occurred.

Step into hard commutation on body diode Low side Switch

Resonant

network

or

load

network

LLd

LLd

LLs

LsPCB

LsPCB

LLs

Vb


Basic of LLC operation: hard commutation

Possibility of hard commutation in LLC topology:

1. Start up.

2. No load.

3. Jump load.

4. Output short circuit.

At these abnormal conditions, LLC controllers will increase their switching frequency to keep a low voltage conversion ratio. It may cause hard commutation situation in the power switches.


Potential risk

MOSFETs Soft-Switching

Completely

Body Diodes do not turn off completely The un-reverse recovery charge triggers the intrinsic BJT of MOSFETs

Light Load

Full Load

I II

MOSFETs ZVS ON Body diode off completely?

MOSFET Failure in ZVS


Diode ON

MOSFET OFF

Diode ON

MOSFET ON

Diode OFF ?

MOSFET ON

Diode OFF

MOSFET OFF

Insufficient voltage (RDS,on×ID) (electrical field) can’t turn OFF the body diode completely

Condition I light load

The un-recovery charge of diode will trigger the intrinsic BJT as MOSFET turn off

Exceed a critical load, the current of resonant inductor can keep body diode ON –further ZVS ON

light load condition


Un-Completely Reverse Recovery MOSFET

Under specified current level, the body diode is un-completely reverse recovery

Voltage/current rining


Above Specified Load

Diode ON

MOSFET OFF

Diode ON

MOSFET ON

Diode OFF

MOSFET ON

Diode OFF

MOSFET OFF

Exceed a critical load, the current of resonant inductor can keep body diode ON -ZVS ON Sufficient voltage (RDS,on×ID) (electrical field) can turn off the body diode completely

Condition II Above specified load


Completely Reverse Recovery MOSFET

Above specified current level, the body diode is completely reverse recovery

No voltage, no current rining


Hard commutation of body diode: C6 shows less reverse recovery charge than C3 and better softness than CFD

-30

-20

-10

0

10

20

30

40

0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1

Time [µs]

Cu

rre

nt

IDS

[A

]

SPP20N60C3

SPP20N60CFD

IPP60R200C6

Qrr C3 = 9.6µC trr C3 = 510ns

Qrr C6 = 7.1µC trr C6 = 414ns

Qrr CFD = 1.1µC trr CFD = 155ns

NO CFD-type required in applications with non-repetitive hard diode commutation such as LLC, phase shift ZVS etc. => Good choice for resonant topologies


Gate voltage signal vs drain current

C6 shows no gate spikes up to pulse currents beyond 2 times rated nominal current

Competitor part shows turn off gate spikes already below nominal current. Datasheet ratings on max VGS gets violated.

C6

Nominal current

pulse current 40A

20A

Vgs

Id

Comp SJ

Nominal current

pulse current 40A

20A

Dynamical allowed value of gate voltage (30V)

Vgs

Id


Comparison turn on / turn off losses C6 vs C3

0

0,01

0,02

0,03

0,04

0,05

0,06

0,07

0,08

0,09

0 5 10 15 20 25 30 35 40

External gate resistor [Ohm]

Tu

rn o

n /

tu

rn o

ff l

os

se

s [

mJ

]

Turn on loss C6

Turn off loss C6

Turn on loss C3

Turn off loss C3

similar turn on losses. C6 higher turn off-losses at plug-and-play replaced. lower Rg for C6 recommended!

IDS=5.4 A, VDS=400 V, Tj=125 °C, RDSon=190 mOhm


Comparison turn on / turn off losses C6 vs CP

0

0,01

0,02

0,03

0,04

0,05

0,06

0,07

0 5 10 15 20 25 30 35 40

External gate resistor [Ohm]

Tu

rn o

n /

tu

rn o

ff l

os

se

s [

mJ

]

Turn on loss C6

Turn off loss C6

Turn on loss CP

Turn off loss CP


Comparison efficiency in commercial 300W PFC Stage Vin=115Vac rms, fsw = 130 kHz, included losses: AUX, EMC filter, Rectifier

87.000%

88.000%

89.000%

90.000%

91.000%

92.000%

93.000%

94.000%

95.000%

96.000%

0.00 50.00 100.00 150.00 200.00 250.00 300.00 350.00

Pout [W]

eta

[%]

IPP60R190C6 0R

IPP60R190C6 3R3

IPP60R190C6 10R

DTMOS II 3R3

STP25NM60N 3R3

SPP20N60C3 3R3

IPP60R199CP 3R3

95.0%

95.1%

95.2%

95.3%

95.4%

95.5%

290 295 300 305 310

Pout [W]

eta

[%

]

93.8%

94.0%

94.2%

94.4%

94.6%

140 145 150 155 160Pout [W]

eta

[%

]

87.4%

87.6%

87.8%

88.0%

88.2%

88.4%

88.6%

20.00 30.00 40.00 50.00

Pout [W]

eta

[%

]

C6 better than C3 0.6% @ 20% and 0.1% @ 50% load

normal operating area On par with C3,

0.2% below CP and DTII

Equal to CP and DTMOS II, 0.1% better than C3

Equal to DT MOSII, 0.6% better

than C3

Comp A 3R3

Comp B 3R3


Good Qoss for C6

0

25

50

75

100

125

150

0 50 100 150 200 250 300 350 400 450 500

Voltage VDS [V]

Qo

ss

[n

C]

0

3

6

9

12

15

18

Eo

ss [

µJ]

Qoss C6

Qoss C3

Qoss CP

Eoss C6

Eoss C3

Eoss CP

Less resonant energy required in soft switching converters

C6 shows the best Figure-of-Merit Ron*Eoss

Best Eoss for C6

RDSon 190 mOhm

C3

CP

C6

2DSossoss VC

2

1E


Differentiation between CoolMOS™ C6/E6 Smaller internal Rg for E6

Motivation:

Minimize efficiency gaps between C3 and C6 in DCM and LLC applications due to high integrated Rg E6 series has lower integrated Rg

Benefits:

Optimized for efficiency in DCM applications (compared to C6)

Ease of use / easy to design in

0

5

10

15

20

Rg

,in

t [O

hm

]

RDSon[mOhm]

Rg,int selection 600V

600V_E6_new [Ohm]


Summary:

CoolMOS C6/E6 best efficiency both light and heavy load.

Reduction of external Rg is required to utilize full potential of C6/E6.

Target to replace C3, product portfolio cover C3 and CP.

CoolMOS C6/E6 self-limited avoids excessive di/dt and dv/dt

Easy to use.

Easy drive and control via external Rg.

CoolMOS C6/E6 with excellent commutation ruggedness.

Possible to be alternative of CoolMOS CFD series.

CoolMOSTM C6/E6 - the new reference in the HV MOS

market


600 V CoolMOS™ C6 and E6 Portfolio……cont

21.10.2011


600 V CoolMOS™ C6 and E6 Portfolio……cont

21.10.2011


CoolMOS 650V CFD Improvements new CFD technology

The new CoolMOS CFD technology will have several improvements vs. existing CFD portfolio:

New 650V voltage rating

Improved Qrr, trr vs. current CoolMOS CFD portfolio

Soft current tail during diode commutation

Reduced Eoss -> Higher switching efficiency

Qrr, trr max. ratings defined


Qrr Comparison

10/21/2011 Copyright © Infineon Technologies 2009. All rights reserved. Page 34


Improved commutation behavior: Softness and Qrr

Qrr C3 = 20µC trr C3 = 729ns

Qrr CFD = 1.00µC trr CFD = 189ns

The new CoolMOS CFD technology shows strongly improved body diode commutation behavior

¬reduced Qrr vs. todays CFD

¬reduced trr vs. todays CFD

¬soft current tail

di/dt = 100A/µs


CoolMOS CFD Improved diode commutation behavior @100A/µs

Qrr C3 = 20µC trr C3 = 729ns

Qrr C6 CFD = 1,40µC trr C6 CFD = 189ns

di/dt = 100A/µs

Qrr C3 CFD = 2µC trr C3 CFD = 189ns


Hard commutation of body diode at >1000A/µs

T=25°C; If=20A; Rg,d=5.6 Ohm; Ugs=13V

0

100

200

300

400

500

600

700

800

0 50 100 150 200 250 300 350 400 450 500

t[µs]

U[V

]

Comp2 43A

SPW47NM60CFD

IPW65R080CFD

676V

569V

452V

Comp2 43A SPW47N60CFD IPW65R080CFD

- SPW47N60CFD - IPW65R080CFD

- Comp2 43A

Copyright © Infineon Technologies 2010. All rights reserved. 10.02.2010 Page 38 Copyright © Infineon Technologies 2010. All rights reserved.

Efficiency comparison 600V CFD vs 650V CFD2 in 600W Server PSU

ZVS-Area

HS-Area

Old ES with higher internal Rg. Higher Eff. is expected with

next ES


CoolMOS™ series naming

Infineon

Power MOSFETs

Package name W [TO-247]

I [I²-PAK]

A [TO-220 FP]

P [TO-220]

B [TO-263]

S [TO-251 SL]

U [TO-251]

D [TO252]

N [TO223]

voltage class

R for Rds(on)

Rds(on) class

CoolMOS™ product familie CP CFD C3 C6

I P P 60 R 099 C6

Documents

CoolMOS, Your Choice for LED/LCD TV - infineon.com Your Choice for LED/LCD TV Jimmy Wang ... B ac klight Inverter 12V output Sys tem & A udio ... 400 500 600 700 800 900 1000