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Design of a 3.1-10.6GHz Low-Vol tage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Re ceivers Microwave Conference Proceedings, 2005. APMC 2005. IEEE International 4-7 Dec. 2005 Page 所所 : 所 所所所所所所所 所所 : 95662004 所所 所所所

Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

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Page 1: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers

Microwave Conference Proceedings, 2005. APMC 2005. IEEE International 4-7 Dec. 2005 Page

所別 : 積體電路設計研究所

學號 : 95662004

學生:賴秀全

Page 2: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Outline

Abstract Introduction Circuit design Simulation results and layout

considerations Conclusion References

Page 3: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Abstract

A low-voltage, low-power ultra-wideband (UWB) low-noise amplifier (LNA) for IEEE 802.15.3a is presented. A simplified Chebyshev filter is used to achieve the input broadband matching.

The LNA is simulated based on TSMC 0.18μm mixed signal/RF process. With only 1V bias voltage, the LNA can achieve power flat gain of 10dB with input matching of -9.76dB; the minimum noise figure 3.7dB; and input third-order-intercept point (IIP3) of -1dB. The power dissipation is only 7.2mW

Page 4: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Introduction Ultra-wideband (UWB) communication techniques

have attracted great interests in both academia and industry in the past few years for applications in short-range and high-speed wireless mobile systems. UWB systems operate across a wide range of frequency between 3.1-10.6 GHz.

Page 5: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 1. Schematic of the UWB LNA

Page 6: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 2 . doubly band-pass filter

Page 7: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 3. Schematic of the LNA input network

Page 8: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 4. Simulated power gain (S21)

Page 9: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 5. Simulated input reflection coefficient (S11)

-9.76db

Page 10: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 6. Simulated output reflection coefficient (S22)

-9.64db

Page 11: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 7. Simulated noise figure

3.68dB

Page 12: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 8. Layout view

Page 13: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Figure 9. SUMMARY OF UWB LNA PERFORMANCE AND COMPARISO WITH PREVIOUSLY PUBLISHED DESIGNS

Page 14: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Conclusion

UWB LNA has been designed in a standard TSMC 0.18-μm CMOS 1P6M technology. The design uses a three-section simplified Chebyshev filter for the input network, which can greatly reduce the circuit complexity and achieve the input.

The cascode architecture and the output-matching buffer allow us to achieve simultaneously high gain, low noise, and high linearity.

Page 15: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

References IEEE 802.15 WPAN High Rate Alternative PHY Task Group3a(TG3a).A

vailable:http://www.ieee802.org/15/pub/TG3a.html

A. Tanaka, H. Kodama, A. Kasamatsu, "Low-noise Amplifier with Center Frequency Hoping for an MB-OFDM UWB Receiver", Joint UWBST&IWUWBS2004, No.FA-4-4, May.20,2004.

A .Bevilacqua and A. Niknejad, “An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers,” in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2004, pp. 382-383.

A .Bevilacqua and A. Niknejad, “An ultra-wideband CMOS LNA for

3.1 to 10.6 GHz wireless receivers,” in Int. Solid-State Circuits Conf.Tech. Dig., Feb. 2004, pp. 382-383.

Page 16: Design of a 3.1-10.6GHz Low-Voltage, Low-Power CMOS Low-Noise Amplifier for Ultra-wideband Receivers Microwave Conference Proceedings, 2005. APMC 2005

Q&A

Thank you