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Development of a Large Reflectometer for Lar ge EUV Optical Elements Tetsuo Harada , Hiraku Hashimoto, Harutaka Iguchi, Youhei Takahashi, Takeo Watanabe, and Hiroo Kinoshita Center for EUV Lithography LASTI University of Hyogo Center for EUV Lithography , LASTI, University of Hyogo Introduction NewSUBARU BL-10 EUV source power is a critical issue of EUV lithography. The collector mirror performance is strongly related with the output power. At the laser produced plasma (LPP) source tin debris is serious problem to reduce the reflectance Reflectometer E-mail: [email protected] (LPP) source, tin debris is serious problem to reduce the reflectance. Reflectometer for the collector mirror is very important to develop EUV source system. EUV Source Power Collector Performa nce Schematic view of beamline 10 of NewSUBARU. Sn(Tin) debris Carbon Contamination Measurement tool z A new large reflectometer is installed at BL-10 of NewSUBARU synchrotron Schematic of EUV source (LPP). In Japan, there are the source company and the device makers. The large reflectometer is strongly required which is an EUV basic tool Reflectometer Measurement tool was required in Japan facility. A new branch beamline was constructed for this new reflectometer. z In past years, we developed the other reflectometer for EUV mask metrology at straight line of BL-10. z The monochromator is Monk-Gillieson type with plane varied-line-spacing grating. The wavelength repeatability is very high of pm order. Large Reflectometer Large reflectometer reflectometer is strongly required, which is an EUV basic tool. 2.9 m Schematic drawing of stage movement. Mask Microscope for Mask Detector Photodiode 2.6 m Axis Range Encoder precision Y -50 mm +450 mm 100 nm Z -140 mm +100 mm 100 nm φ 360° 0.00014°(0.5’’) Tilt ±10° 0.00014° (0.5’’) BL controller XAS Chamber Mask Reflectometer Refocusing mirror (Bendable) A vacuum chamber. Six-axis stage in the vacuum chamber Table. Stage range and precision. Sample Stage θ -5°~ +95° 0.00016°(0.6’’) 2θ -5°~ +185° 0.00014°(0.5’’) BL controller Refocusing mirror A vacuum chamber. Six axis stage in the vacuum chamber . Max. Sample size Dia. φ800 mm, Thickness 250 mm, Weight 50 kg z Ch b i Di 26 H i ht29 (11 3 ) Specification Straight beamline Branch beamline Peak: 13.58 nm R: 63.3 % (2 tl ) This result EUV mask test Switching Mirror z Chamber size Dia. 2.6 m x Height 2.9 m (11 m 3 ) z Back pressure 2×10 -6 Pa z Sample Stage five axisθ, Y, Z, tilt, φ)、detector 2θ z The entire sample surface is able to be measured using Y and rotation axis. z Closed Loop with high precision Peak: 13.58 nm R: 65.3 % The mask reflectometer result (2pt lower) B hb li Exit slit Control PC Closed Loop with high precision z All motor is not vacuum type with high torque, and packed in a small chamber unit. All the motor unit is installed in the large chamber. The stage can move without influence of chamber transform. Measurement result of EUV mask reflectance. The reflectance was measured with high wavelength reproducibility. High order light from grating should be reduced to evaluate correct reflectivity. Branch beamline BL Switching Collaboration with Monochromator New branch beamline was constructed for the large reflectometer. Focusing size measurement by knife edge test (EUV 13.5 nm) Vertical Horizontal Refocusing bendable mirror Collaboration with Photo. NewSUBARU BL-10. Beam sizeVertical 0 35 mm Horizontal 1 4 mm Focusing length is adjustable by bendable mechanism. Beam sizeVertical 0.35 mm, Horizontal 1.4 mm Usually, the refocusing-optics magnification should be 1:1 to reduce the aberration. This system magnification is 2.5:1. However, the beam size was small as 0.35 mm (V), because the mirror shape can be transform to ellipsoidal Kinematic mount has To Reflectometer: 9.0 m To exit slit: 3.6 m Summary Repeatabilityvertical 11 μrad, Horizontal 17 μrad Schematic drawing of refocusing system. the mirror shape can be transform to ellipsoidal shape. The bending torques of the both side were optimized. high repeatability. Photograph of refocusing system. This work was supported by Open Advanced Research Facility Initiative, MEXT, Japan. z A new large reflectometer has been developed to evaluate EUV collector mirror, and soft X-ray large component in NewSUBARU, JAPAN. z Maximum sample size is φ800 mm, t250 mm, and 50 kg. The entire surface is able to be measured. z This reflectometer will help the EUV source development, and soft X-ray optics development.

Development of a Large Reflectometer for Larggpe EUV Optical …euvlsymposium.lbl.gov/pdf/2014/a7665302d9984e86847fd3b3... · 2015. 11. 24. · zThe monochromator is Monk-Gillieson

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  • Development of a Large Reflectometerfor Large EUV Optical Elementsg p

    Tetsuo Harada, Hiraku Hashimoto, Harutaka Iguchi, Youhei Takahashi, Takeo Watanabe, and Hiroo Kinoshita

    Center for EUV Lithography LASTI University of HyogoCenter for EUV Lithography, LASTI, University of Hyogo

    Introduction NewSUBARU BL-10

    EUV source power is a critical issue of EUV lithography. The collector mirror performance is strongly related with the output power. At the laser produced plasma (LPP) source tin debris is serious problem to reduce the reflectance Reflectometer

    E-mail: [email protected]

    (LPP) source, tin debris is serious problem to reduce the reflectance. Reflectometer for the collector mirror is very important to develop EUV source system.

    EUV Source Power

    Collector Performa

    nce∝

    Schematic view of beamline 10 of NewSUBARU.

    Sn(Tin) debrisCarbon Contamination

    Measurement tool A new large reflectometer is installed at BL-10 of NewSUBARU synchrotron

    Schematic of EUV source (LPP).

    In Japan, there are the source company and the device makers. The large reflectometer is strongly required which is an EUV basic tool

    ReflectometerMeasurement tool

    was required in Japan

    e a ge e ecto ete s sta ed at 0 o e SU U sy c ot ofacility. A new branch beamline was constructed for this new reflectometer.

    In past years, we developed the other reflectometer for EUV mask metrology at straight line of BL-10.

    The monochromator is Monk-Gillieson type with plane varied-line-spacing grating. The wavelength repeatability is very high of pm order.

    Large Reflectometer

    Large reflectometer

    reflectometer is strongly required, which is an EUV basic tool.

    2.9 m

    Schematic drawing of stage movement.Mask

    Microscopefor Mask

    DetectorPhotodiode2.6 m

    Axis Range EncoderprecisionY -50 mm ~ +450 mm 100 nmZ -140 mm ~ +100 mm 100 nmφ 360° 0.00014°(0.5’’)

    Tilt ±10° 0.00014° (0.5’’)BL controller

    XASChamber

    MaskReflectometer

    Refocusingmirror (Bendable)

    A vacuum chamber. Six-axis stage in the vacuum chamber

    Table. Stage range and precision.

    Sample Stage

    θ -5°~ +95° 0.00016°(0.6’’)2θ -5°~ +185° 0.00014°(0.5’’)

    BL controllerRefocusing

    mirror

    A vacuum chamber. Six axis stage in the vacuum chamber.

    Max. Sample size

    Dia. φ800 mm, Thickness 250 mm, Weight 50 kg

    Ch b i Di 2 6 H i ht 2 9 (11 3)Specification Straightbeamline

    Branchbeamline Peak: 13.58 nm

    R: 63.3 %(2 t l )

    This resultEUV mask test

    SwitchingMirror

    Chamber size Dia. 2.6 m x Height 2.9 m (11 m3)Back pressure 2×10-6 PaSample Stage five axis(θ, Y, Z, tilt, φ)、detector 2θThe entire sample surface is able to be measured using Y

    and rotation axis.Closed Loop with high precision

    Peak: 13.58 nmR: 65.3 %

    The mask reflectometer result

    (2pt lower)

    B h b li

    Exit slitControl PCClosed Loop with high precisionAll motor is not vacuum type with high torque, and packed

    in a small chamber unit. All the motor unit is installed in the large chamber. The stage can move without influence of chamber transform.

    Measurement result of EUV mask reflectance.The reflectance was measured with high wavelength reproducibility. High order light from grating should be reduced to evaluate correct reflectivity.

    Branch beamline

    BL SwitchingCollaboration with

    Monochromator

    New branch beamline was constructed for the large reflectometer.Focusing size measurement by knife edge test

    (EUV 13.5 nm)Vertical Horizontal

    Refocusing bendable mirror Collaboration withPhoto. NewSUBARU BL-10.

    Beam size: Vertical 0 35 mm Horizontal 1 4 mm

    Focusing length is adjustable by bendable mechanism.

    Beam size: Vertical 0.35 mm, Horizontal 1.4 mm

    Usually, the refocusing-optics magnification should be 1:1 to reduce the aberration. This system magnification is 2.5:1. However, the beam size was small as 0.35 mm (V), because the mirror shape can be transform to ellipsoidalKinematic mount has

    To Reflectometer:9.0 m

    To exit slit: 3.6 m

    Summary

    Repeatability: vertical 11 μrad, Horizontal 17 μrad Schematic drawing of refocusing system.

    the mirror shape can be transform to ellipsoidal shape. The bending torques of the both side were optimized.

    high repeatability.

    Photograph of refocusing system.

    This work was supported by Open Advanced Research Facility Initiative, MEXT, Japan.

    A new large reflectometer has been developed to evaluate EUV collector mirror, and soft X-ray large component in NewSUBARU, JAPAN.Maximum sample size is φ800 mm, t250 mm, and 50 kg. The entire surface is able to be measured.This reflectometer will help the EUV source development, and soft X-ray optics development.