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KETTŐS REZONANCIA GRAFIT és SZÉN NANOCSÖVEK RAMAN SPEKTRUMÁBAN. MTA SZFKI , 2005. április 4. Kürti Jenő ELTE Biológiai Fizika Tanszék e-mail: [email protected]: virag.elte.hu/~kurti. VÁZLAT. Bevezetés - PowerPoint PPT Presentation
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KETTŐS REZONANCIA GRAFIT
ésSZÉN NANOCSÖVEK
RAMAN SPEKTRUMÁBAN
MTA SZFKI , 2005. április 4.
Kürti Jenő
ELTE Biológiai Fizika Tanszék
e-mail: [email protected] www: virag.elte.hu/~kurti
VÁZLAT• Bevezetés
– rendezetlenség („disorder”) által indukált sáv (D-sáv) sp2 szén vegyületek Raman spektrumában
• Kettős rezonancia (elmélet)– grafit– egyfalú szén nanocsövek (SWCNTs)
• Összefoglalás
• graphite single crystal
• stress-annealed pyrolite graphite
• commercial graphite
• activated charcoal
λ = 488 nm
F.Tuinstra and J.L.Koenig, J. of Chem. Phys. 53, 1126 (1970)
G: 1575 cm-
1
D: 1355 cm-1
D band in graphiteG
D
A grafit D-sávjának diszperziója Elaser függvényében
I. Pócsik, M. Hundhausen, M. Koós and L. Ley, J. of Non-Crystalline Solids 227-230B, 1083 (1998)
ωD /Elaser 50 cm-1/eV
D band
Measured D band of SWCNTs
Bundles
with
Gaussian diameter distribution:
p(d) exp(-(d-d0)2/22)
with d0 = 1.32 nm and = 0.14 nm
various laser excitation (eV)
J.Kürti, V.Zólyomi, A.Grüneis and H.Kuzmany, PRB 65, 165433, 2002
ωD(cm-1) = 1219 + 52 Elaser (eV)
ωD*(cm-1) = 2419 + 106 Elaser (eV) (G’)Measured anomalous dispersion of the D band of
SWCNTs
Tight binding
R.A.Jishi et al. CPL 209 77 (1983)
DFT
D.Sanchez-Portal et al. PRB 59 12678 (1999)
Valence force field MO/8
C.Mapelli et al.
PRB 60 12710 (1999)
DFT (VASP)
G.Kresse et al. Europhys. Lett. 32 729 (1995)
Raman basics
Stokes, 0 = 2 – 1, :
i
b
a
1
1
2
Raman basics
Stokes, = 1 – 2, :
1
1
2
ba
Disorder induced resonant Raman scattering
defect scattering
phonon scattering
Raman amplitudes for the Feynman diagrams
Stokes
anti Stokes
Double resonance: two of the denominators are zero at the same time
(C.Thomsen and S.Reich, PRL 85, 5214, 2000 : for graphite)
Eael = conduction(k) - valence(k) Eb
el = conduction(k’) - valence(k)
( = 0.01-0.1 eV)
Disorder induced resonant Raman scattering
defect scattering
phonon scattering
Graphene electron energy dispersion from book: R.Saito, G.Dresselhaus, M.S.Dresselhaus, Physical Proprties of Carbon Nanotubes, Imperial College Press, 1998
conduction band
valence band
E 18 eV
EM 6 eV
EK 0 eV
Relevant 4th order Feynman diagrams for Stokes and antiStokes processes
defect scattering
phonon scattering
Eael = conduction(k) - valence(k), Eb
el = conduction(k’) - valence(k), etc
( = 0.01-0.1 eV)
Raman amplitudes for the Feynman diagrams
Stokes
anti Stokes
Double resonance: two of the denominators are zero at the same time
(C.Thomsen and S.Reich, PRL 85, 5214, 2000 : for graphite)
Relevant 4th order Feynman diagrams for Stokes processes
Graphene electron energy dispersion from book: R.Saito, G.Dresselhaus, M.S.Dresselhaus, Physical Proprties of Carbon Nanotubes, Imperial College Press, 1998
conduction band
valence band
conduction band
valence band
III, IV
I, II
E 18 eV
EM 6 eV
EK 0 eV
equi excitation energy curves of electrons
equi phonon frequency curves
electron dispersion phonon dispersion
q0 = K’K K’
q0
q0
Calculated D band of graphene
Elaser = 2.0 eV —
Elaser = 2.5 eV ---
Simple qualitative interpretation of the maxima 1, 2 and 3
q0 = |K’K|
q1 > q0
q2 < q0
q3a = q3b q0
Points in k-space of a general (chiral) SWCNT for double resonance condition
2/d
qphonon
Calculated D band for a (11,9) SWCNT
Triple (quadruple) resonance = double resonance + VH enhancement
Eii
Van Hove singularity
1D - DOS
Van Hove singularity
Calculated van Hove enhancement for the (11,9) tube
EE2222 = 1.197 eV = 1.197 eV
E33 = 2.382 eV
EE4444 = 2.860 eV = 2.860 eV
in out
S.L.Zhang et al., PRB 66, 35413, 2002
Abnormal anti-Stokes Raman scattering for the D mode of SWCNTs
Elaser = 2.41eV
V.Zólyomi and J. Kürti, PRB 66, 073418, 2002
a-S
S
Calculated dispersion of the Stokes and anti-Stokes D band for a bundle of SWCNTs
ω ωD /Elaser• hωphonon
0.16 eV
0.16 eV
SUMMARY
The D band (around 1300 cm-1) of sp2 carbon materials (graphite as well as SWCNTs) is induced by disorder. Defects allow higher order Raman process involving non-zone-center phonons
The D* (G’) band (around 2600 cm-1) is te result of a two-phonon process, and needs no disorder
The position of the D band shifts with increasing laser excitation energy ( 50 cm-1/eV). Similar dispersion holds for the D* (G’) band ( 100 cm-1/eV)
Additional (selective) enhancement due to Van Hove singularities in the case of SWCNTs
Characterization of “Defects”A. C. Dillon et al.,
CPL 401 (2005) 522
R. Czerw et al. Nanoletters 1, 457 (2001)M. Terrones et al. Appl. Phys. A, 74, 355 (2002)
Microscopy and ab initio…
from Ado Jorio
A. C. Dillon et al.CPL 401, 522 (2005)
Mass-transport-limited oxidation inducing defects
The D band intensity depends on reaction time
D band increases with increasing B doping
M. Terrones et al. Materials Today Magazine (2004)
from Ado Jorio
Defect-free SWNT bundles
Forbidden Raman modes are observed in
defective materials
Defective sample
Defect-free sample
PMMA+SWNT fiberM.Souza et al. PRB (2004)
Disorder G-band proposed by Maultzsch et al. PRB (2003)
from Ado Jorio
Micro-Raman spectra from graphite edges
AFM
STM
Raman Spectra
D band is strong for armchair edgeand weak for zigzag edge
zigzag edge
armchair edge
Cancado et al. PRL (2004)
HOPG substrate
Raman can tell us if the edge has an
armchair or zigzag structure
Double resonance one “1D defect” explains the resultCancado et al. PRL (2004)
Micro-Raman spectra from graphite edges
Such an effect has been predicted for SWNTs but not yet
observed[Maultzsch et al.,
PRB(2001)]