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This is information on a product in full production.
February 2015 DocID025255 Rev 3 1/15
STF28N60M2, STFI28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in TO-220FP and I2PAKFP packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications• Switching applications
• LCC converters, resonant converters
DescriptionThese devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
TO-220FP
12
3
I PAKFP (TO-281)2
1 23
AM15572v1
Order code VDS @ TJmax RDS(on) max ID
STF28N60M2650 V 0.150 Ω 22 A
STFI28N60M2
Table 1. Device summary
Order code Marking Package Packaging
STF28N60M228N60M2
TO-220FPTube
STFI28N60M2 I2PAKFP (TO-281)
www.st.com
Contents STF28N60M2, STFI28N60M2
2/15 DocID025255 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 I2PAK (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DocID025255 Rev 3 3/15
STF28N60M2, STFI28N60M2 Electrical ratings
15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 22(1)
1. Limited by maximum junction temperature.
A
ID Drain current (continuous) at TC = 100 °C 14(1) A
IDM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 88(1) A
PTOT Total dissipation at TC = 25 °C 30 W
dv/dt (3)
3. ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt(4)
4. VDS ≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)2500 V
Tstg Storage temperature- 55 to 150 °C
Tj Operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 4.17 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
3.6 A
EASSingle pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V)
350 mJ
Electrical characteristics STF28N60M2, STFI28N60M2
4/15 DocID025255 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSSDrain-source breakdown voltage
ID = 1 mA, VGS = 0 600 V
IDSSZero gate voltage drain current (VGS = 0)
VDS = 600 V 1 µA
VDS = 600 V, TC=125 °C 100 µA
IGSSGate-body leakage
current (VDS = 0)VGS = ± 25 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)Static drain-source on-resistance
VGS = 10 V, ID = 11 A 0.135 0.150 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0
- 1440 - pF
Coss Output capacitance - 70 - pF
CrssReverse transfer capacitance
- 2 - pF
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 - 104 - pF
RGIntrinsic gate resistance
f = 1 MHz open drain - 5.5 - Ω
Qg Total gate charge VDD = 480 V, ID = 22 A,
VGS = 10 V(see Figure 15)
- 36 - nC
Qgs Gate-source charge - 7.2 - nC
Qgd Gate-drain charge - 16 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 300 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and Figure 19)
- 14.5 - ns
tr Rise time - 7.2 - ns
td(off) Turn-off delay time - 100 - ns
tf Fall time - 8 - ns
DocID025255 Rev 3 5/15
STF28N60M2, STFI28N60M2 Electrical characteristics
15
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 22 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 88 A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 22 A, VGS = 0 - 1.6 V
trr Reverse recovery timeISD = 22 A, di/dt = 100 A/µsVDD = 60 V (see Figure 19)
- 350 ns
Qrr Reverse recovery charge - 4.7 µC
IRRM Reverse recovery current - 27 A
trr Reverse recovery time ISD = 22 A, di/dt = 100 A/µsVDD = 60 V, Tj = 150 °C(see Figure 19)
- 451 ns
Qrr Reverse recovery charge - 6.5 µC
IRRM Reverse recovery current - 29 A
Electrical characteristics STF28N60M2, STFI28N60M2
6/15 DocID025255 Rev 3
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
1
0.1
0.010.1 1 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
1ms
100µs
Tj=150°CTc=25°CSingle pulse
10ms
100
10
AM17988v1
ID
50
30
10
00 5 VDS(V)10
(A)
15
4V
5V
VGS=7, 8, 9, 10V
20
40
20
6V
AM17989v1ID
40
20
00 4 VGS(V)8
(A)
2 6 10
10
30
50VDS=18V
AM17990v1
VGS
6
4
2
00 20 Qg(nC)
(V)
8
30 40
10
VDD=480VID=22A12
300
200
100
0
400
500VDS
10
VDS(V)
AM17991v1RDS(on)
0.134
0.132
0.1300 8 ID(A)
(Ω)
4 12
0.136
VGS=10V
16
0.138
0.140
0.142
20
AM17992v1
DocID025255 Rev 3 7/15
STF28N60M2, STFI28N60M2 Electrical characteristics
15
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Normalized V(BR)DSS vs temperature Figure 13. Source-drain diode forward characteristics
C
1000
100
10
10.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
10000
AM17993v1 Eoss
4
2
00 100 VDS(V)
(µJ)
400200 300
6
500 600
8
10
AM17994v1
VGS(th)
1.0
0.9
0.8
0.7-50 0 TJ(°C)
(norm)
-25
1.1
7525 50 100
ID=250µA
AM17995v1RDS(on)
1.9
1.3
0.9
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100
0.7
1.1
1.5
1.7
2.1
2.3
ID=11A
AM17996v1
-50 0 TJ(°C)-25 7525 50 1000.91
0.95
0.99
1.03
ID=1mA
1.07
1.11
AM117997V(BR)DSS VSD
0 4 ISD(A)
(V)
1280
0.2
0.4
0.6
TJ=-50°C
TJ=150°CTJ=25°C
0.8
1
16 20
1.4
1.2
AM17998v1
Test circuits STF28N60M2, STFI28N60M2
8/15 DocID025255 Rev 3
3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID025255 Rev 3 9/15
STF28N60M2, STFI28N60M2 Package information
15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Package information STF28N60M2, STFI28N60M2
10/15 DocID025255 Rev 3
4.1 TO-220FP package information
Figure 20. TO-220FP outline
7012510_Rev_K_B
DocID025255 Rev 3 11/15
STF28N60M2, STFI28N60M2 Package information
15
Table 9. TO-220FP mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package information STF28N60M2, STFI28N60M2
12/15 DocID025255 Rev 3
4.2 I2PAK (TO-281) package information
Figure 21. I2PAKFP (TO-281) outline
DocID025255 Rev 3 13/15
STF28N60M2, STFI28N60M2 Package information
15
Table 10. I2PAKFP (TO-281) mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 - 4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.50 7.60 7.70
Revision history STF28N60M2, STFI28N60M2
14/15 DocID025255 Rev 3
5 Revision history
Table 11. Document revision history
Date Revision Changes
13-Sep-2013 1 First release.
29-Jan-2014 2
– Added: I2PAKFP package– Modified: title, ID value and features in cover page– Modified: ID, IDM and PTOT values in Table 2
– Modified: note 3– Modified: Rthj-case value in Table 3– Modified: the entire typical values in Table 4, 6, 7 and 8
– Modified: RDS(on) typical value– Modified: Figure 7 and 8– Updated: Table 9 and Figure 14
– Added: Section 4: Package information– Minor text changes
13-Feb-2015 3
– Updated title, description and features in cover page.– Updated Table 2.: Absolute maximum ratings and Table 4.:
Avalanche characteristics.– Updated Figure 12.: Normalized V(BR)DSS vs temperature.– Updated 4: Package information.
– Minor text changes.
DocID025255 Rev 3 15/15
STF28N60M2, STFI28N60M2
15
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