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 EECS 170C Lecture Week 1 Spring 2014 EECS 170C Prof. M. Green / U.C. Irvine 1

Op Amp Design

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OPAMP DESIGN CIRCUIT

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  • EECS 170C Lecture Week 1

    Spring 2014 EECS 170C

    Prof. M. Green / U.C. Irvine

    1

  • Lowpass Filter Example

    R1 =1 k

    R2 =1 k

    C2 =1 pF

    Vin

    Voutideal op-amp

    Av =R2R1

    = 1

    f3dB =1

    2 C2R2=159 MHz

    From standard circuit analysis:

    Spring 2014 EECS 170C

    2 Prof. M. Green / U.C. Irvine

  • R1

    R2

    C2

    Vin

    Voutideal op-amp

    Lowpass Filter Design

    Av = 2

    f3dB = 500 MHz

    Specifications:

    Av =R2R1

    = 2

    f3dB =1

    2 C2R2= 500106

    2 equations with 3 unknowns not a unique solution!

    Spring 2014 EECS 170C

    3 Prof. M. Green / U.C. Irvine

  • Capacitors should be no larger than 1 pF:

    Set C2 = 1 pF

    R2 = 318

    R1 = 159

    Additional constraint #2: For f > f3dB, magnitude should exhibit -40 dB/decade rolloff:

    f

    H j( )

    f3dB

    -20 dB/decade

    R1

    R2

    C2

    Vin

    Vout

    The given circuit topology cannot satisfy this constraint.

    Additional constraint #1:

    Spring 2014 EECS 170C

    4 Prof. M. Green / U.C. Irvine

  • R1

    R2

    C2

    Vin

    Vout

    C1

    R3

    H s( ) = R2R1 + R3

    11+ sC1 R1 || R3( )[ ] 1+ sC2R2( )

    Additional constraint #3: Under the condition that Rs and Cs vary randomly within 10%, f3B should vary no more than 5%

    This constraint is impossible to meet for any RC filter!

    2nd-order filter topology (2 capacitors) needed:

    Spring 2014 EECS 170C

    5 Prof. M. Green / U.C. Irvine

  • Replace resistors with triode-biased MOSFETs with gates controlled by dc voltage VG, realizing electrically controllable resistors. Critical frequencies can be controlled by VG.

    Vin Vout

    VG

    Possible solution #2:

    Replace resistors with configuration consisting of capacitor and switches, with switches controlled by clock signal with period Tc. Critical frequencies are determined by Tc and capacitor ratios. Critical frequencies can be controlled by Tc.

    Vin Vout

    Possible solution #1:

    Spring 2014 EECS 170C

    6 Prof. M. Green / U.C. Irvine

  • Aspects of Design (Synthesis)

    Desired behavior & specifications are given; component values & circuit topology are not.

    Solution is usually found iteratively: An initial circuit is proposed and analyzed. If specifications are not met, the circuit is modified and re-analyzed.

    There is usually not a unique solution that satisfies the specifications. However, each solution exhibits its own set of tradeoffs (e.g., size, cost, robustness) that must be considered.

    It may not be possible to meet all of the specifications simultaneously using a given technique or technology.

    Spring 2014 EECS 170C

    7 Prof. M. Green / U.C. Irvine

  • Analog vs. Digital Signal Representation

    Analog representation:

    Precision in specifying and measuring voltage signal is determined by random noise generated by circuit components. Dynamic Range is determined by ratio of maximum amplitude (usually determined by supply voltage) and noise level.

    Digital representation:

    Dynamic Range in specifying and measuring digital signal is determined by number of bits used in representing the signal.

    Spring 2014 EECS 170C

    8

    a3 a2 a1a0

    16 possible digits Dynamic Range = 16

    Prof. M. Green / U.C. Irvine

  • Continuous vs. Discrete Methods of Timing

    Continuous-time signaling:

    Voltage signal is defined at any arbitrary instant of time. There is no limit on the highest frequency that can be generated or measured.

    Discrete-time signaling:

    Voltage signal is defined only at discrete values of time kT, where k is an integer. The highest frequency that can be observed is 1/2T the Nyquist frequency.

    Spring 2014 EECS 170C

    9 Prof. M. Green / U.C. Irvine

  • Passive Components

    PD = I V = I 2R 0Power dissipation in a resistor:

    Components that always dissipate power are said to be passive.

    PS =VS2

    RS + RLPower supplied by VS:

    PL = VS RL

    RS + RL#

    $ %

    &

    ' (

    2

    1RL

    Power dissipated in RL:

    PLPS

    =RL

    RS + RL< 1Power gain:

    Power amplification is impossible if only passive components are present. Spring 2014 EECS 170C

    10 Prof. M. Green / U.C. Irvine

  • Active Components A component that is not passive is said to be active.

    PLPS

    = A2 rin

    2

    RS + rin

    RLRL + rout( )

    2

    A2 rinRL

    (assuming rin >> RS , rout

  • Discrete Circuit Realized on a Printed Circuit Board (PCB)

    Spring 2014 EECS 170C

    12 Prof. M. Green / U.C. Irvine

  • Integrated Circuit on a Monolithic Substrate

    Spring 2014 EECS 170C

    13 Prof. M. Green / U.C. Irvine

  • Circuit Realization: Discrete vs. Monolithic

    Each component takes roughly the same area on the board independent of its value.

    Passive components can be chosen to a desired accuracy, subject to cost.

    Most circuit nodes can be observed for testing and verification.

    Dimensions on order of cm.

    The area of a component is directly related to its value.

    Individual component values exhibit large variances; however, like components with identical geometries in close proximity exhibit very close matching (

  • Example of Matching Design an amplifier with an accurate gain of +10: Assume Av can take values between 10,000 and 50,000.

    V+ = Vin

    V = Vout R2

    R1 + R2

    Vout = Av V+ V( )

    VoutVin

    =1

    1Av

    +1

    1+ R1 R2

    Very small depends only on resistor ratio

    Let R1 = 9k , R2 = 1k:

    Av = 10,000 Vout /Vin = 9.990

    Av = 50,000 Vout /Vin = 9.998 independent of individual resistor values

    Spring 2014 EECS 170C

    15 Prof. M. Green / U.C. Irvine

  • X

    X

    X

    1. Die Size

    Manufacturability of ICs

    Spring 2014 EECS 170C

    16 Prof. M. Green / U.C. Irvine

  • 2. Power Dissipation Power dissipated in the IC is converted to heat, raising the temperature of the die & package. Elevated die temperature can degrade circuit performance or even permanently damage the silicon. To accelerate heat removal, a heat sink may need to be used, requiring more space.

    Passive heat sinks Active air-cooling heat sink

    Spring 2014 EECS 170C

    17 Prof. M. Green / U.C. Irvine

  • 3. Robust Design IC must operate properly in the presence of variations in: Processing in fabrication technology

    Individual component values can vary 15% or more Voltage supply

    Supply voltages can vary 10% Temperature

    Circuit should operate to spec at 0--70 C ambient temperature

    PVT

    Spring 2014 EECS 170C

    18 Prof. M. Green / U.C. Irvine

  • Prof. M. Green Univ. of California, Irvine

    19

    FIES eVX VT 1( ) IES e VinVout( ) VT 1$ % &

    ' ( ) = 0

    KCL at Vout:

    (2F ) eVX VT 1( ) + 1R VX VCC( ) = 0KCL at VX:

    Use of Approximation

    19 Spring 2014 EECS 170C

    Prof. M. Green / U.C. Irvine

  • 20

    My Research

    The operation of real high-speed clock dividers is more complex

    Spring 2014 EECS 170C

    1. High-speed frequency divider:

    Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C

    21

    Clock divider based on CML D flip-flop:

    Divider sensitivity curve:

    Vmin = minimum input clock amplitude required for correct operation. (function of input frequency)

    fso = self-oscillation frequency

    Vmax = maximum dc differential voltage that can be applied to the input clock for which the circuit self-oscillates.

    DLW

    !"

    #$%

    &

    DLW

    !"

    #$%

    &

    LLW

    !"

    #$%

    &

    LLW

    !"

    #$%

    &

    CLW

    !"

    #$%

    &

    CLW

    !"

    #$%

    &

    CLW

    !"

    #$%

    &

    LLW

    !"

    #$%

    &

    LLW

    !"

    #$%

    &

    DLW

    !"

    #$%

    &

    DLW

    !"

    #$%

    &

    CLW

    !"

    #$%

    &

    Vmax

    Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C 22

    Divider chip photograph

    Measured sensitivity curves: a) Conventional (DFF) divider b) Modified regenerative divider c) Ring oscillator divider

    Designed at Broadcom using 0.13 m CMOS process; shunt-peaking was used.

    Divider test chip measurements

    Prof. M. Green / U.C. Irvine

  • Normally the equalizer and CDR are designed and implemented as separate blocks. Common elements in each of the two blocks can be iden?ed and combined...

    Spring 2014 EECS 170C

    23

    2. Equalization of broadband receivers:

    Prof. M. Green / U.C. Irvine

  • Circuit Details Shunt-peaking CML summer. 2-stage shunt-peaking CML slicer. Dieren?ally-tuned LC VCO. Re?mer generates low-ISI re?med data.

    DFF1 V-I

    Recovered clock

    DFF3

    DFF2 DFF5

    DFF4

    Input Data+

    +

    -

    a1 a2 a3

    --

    a0

    Retimed DataRetimer

    Rp

    Cp C2

    L1

    2mA

    R1R1

    L1 L2

    4mA

    R2R2

    L2

    V1

    OUTNR

    L L

    R

    AP OUTP

    V2V0 V3

    ANBP BN CP CN DP DN

    VCO

    Summer

    Slicer

    Alexander PD

    FB path

    Spring 2014 EECS 170C

    24 Prof. M. Green / U.C. Irvine

  • Measurement Setup

    Die photo. Implemented in Jazz Semiconductor 0.18m BiCMOS Process (only CMOS transistors used).

    Anritsu MP1763B

    Pattern Generator

    OUT_CLK_N

    OUT_CLK_P

    Anritsu 69137B

    Synthesized Signal

    Generator

    INDATA_N

    INDATA_P

    RF Clock

    HP 83480A

    Oscilloscope

    Trigger

    Clock

    OUTDATA_N

    OUTDATA_P

    Cable

    DFE &

    CDR

    V_UP

    V_DOWN

    1.8V

    Test board

    Test setup

    Spring 2014 EECS 170C

    25 Prof. M. Green / U.C. Irvine

  • Equalizer + CDR Operation (2)

    Recovered clock RJ = 2.15 ps rms

    Recovered clock RJ = 1.83 ps rms

    Re?mer output eye diagram JiXer = 4.14 ps rms

    Re?mer output eye diagram JiXer = 4.96 ps rms

    2.4 m cable

    3.6 m cable

    Cable output eye diagram.

    Cable output eye diagram.

    Spring 2014 EECS 170C

    26 Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C

    27

    Din1

    Din2

    Dout D-FF D Q

    Latch D Q

    10 GHz

    D-FF

    D Q

    D-FF

    D QLatch

    D Q

    D-FF

    D Q

    Select

    A B

    D-FF

    D Q

    D-FF

    D QLatch

    D Q

    Select

    A B

    Din3

    Din0

    Select A B

    10 GHz

    10 GHz

    20 GHz

    20 GHz

    re?mer

    40 GHz

    40 GHz 2 PLL 2

    20 GHz

    10 GHz

    4:1 Multiplexer Tree Structure:

    2. Equalization of broadband receivers:

    Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C

    28

    40GHz Dieren?al Push-Push VCO

    Resonates at 20 GHz

    Virtual ground node

    Resonates at 40 GHz

    Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C

    29

    Chip Board and Die Micrograph

    20 Gb/s inputs

    40 Gb/s output 20 GHz clock

    625 MHz Reference

    clock

    40Gb/s Distributed

    buffer

    40Gb/s MUX and retimer

    Push-push differential

    VCO

    PLL Clock buffers

    20Gb/s inputs

    40 Gb/s output

    20 GHz clock output

    Prof. M. Green / U.C. Irvine

  • Spring 2014 EECS 170C

    30

    Measured 40 Gb/s Output

    40Gb/s MUX output (Dieren?al) with 450 mV dieren?al peak-to-peak ver?cal eye opening and 1.14 ps rms jiXer

    Prof. M. Green / U.C. Irvine