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    118/04/2012CDTA/Microelectronics

    CHENOUF. A

    Advanced Technologies Development CenterMicroelectronics & Nanotechology laboratory

    Presented by : Chenouf. A CAD/VLSI TEAM

    Design Kit Development Project Team

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    1_Introduction

    2_STD Cell developmentflow

    3_Observations

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    1_Introduction

    System design

    Logic design

    Circuit design

    Layout design

    IC Design process

    A typical IC design process is composed of the 4 following steps:

    The process of defining the circuitfunctionality & input/output behavior

    Process of transforming high level Description into a

    netlist of technology-independent logic elements

    System Design

    Logic Design

    Circuit Design

    Layout Design

    Technologymapping

    Process of transforming the basic logic components

    into a network of transistors & interconnects

    The process of creating geometrical shapes on # masklayers which corresponds to a silicon implementation ofthe IC

    The transition from atechnology-independent processto a technology -dependentprocess i.efrom logic synthesis to the circuitand layout design phases iscalled Technology mapping

    This procedure is carried out

    using a specified layout stylesuch as PLA, Gate array, sea ofgates, standard cells or full-custom design implementations

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    A standard cell is a small circuit layout designed with anumber of constraints.It is used as a building block in larger layouts.

    What s a standard cell ?

    The cells with different functions and layouts have to fit together.

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    Standard Cell Library Development

    a) Defining cells schematic;

    b) logical simulation of the cell (if needed);

    c) Electrical simulation for transistor sizing;

    d) Laying out the cell;

    e) Design checking (verification) DRC, ERC, LVS;

    f) Parasitic parameters extraction;

    g) Post-layout simulation ;

    h) Delay equation derivation for the cell;

    i) Tape out & eventual test assistance and SCL( if needed)

    j) Contribution in the Integration in the synthesis tool (if needed)

    k) Documentation of the Library

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    Cells Design Flow

    Simulation

    Schematic

    Layout

    Extraction

    Netlist

    Verification

    Extracted

    Netlist

    techfiles

    Devicemodels

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    1st Step: Cells schematic

    A CMOS gate is composed of two networks : an nMOS pull-downnetwork to connect the output to 0 (GND) and a pMOS pull-up networkto connect the output to 1 (VDD). The networks are arranged such thatone is ON & the other is OFF for any input pattern.

    Pmos

    Pull_upnetwork

    NmosPull_downnetwork

    Inputs output

    Schematic of NAND2

    A

    B

    Y

    VDD

    GND

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    2nd Step: logic simulation

    At the logic level, a gate is presented by its truth table witch

    The logic simulation checks if the output corresponds faithfully to theexpected answer for a given input pattern

    NAND2_ Truth Table

    AB Y

    0 0 1

    0 1 1

    1 0 1

    1 1 0

    A

    B

    Y

    A

    BY

    A

    B

    Y

    11 0

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    3rdStep: Electrical Simulationit entails the representation of the CMOS cell as a netlist oftransistors. Then, to run the electrical simulator on this netlist to getthe results corresponding to the applied inputs.

    From the gotten waveforms, the designer extracts many parametersthat characterize his cell.

    A

    B

    Y

    m1

    m2

    m3m4D G S B L W

    m1 3 1 0 0 ? ?

    m2 4 2 3 0 ? ?

    m3 4 2 5 5 ? ?

    m4 4 1 5 5 ? ?0

    1 3

    2

    4

    5 Corresponding Netlist

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    4th Step: laying out the cell

    Design rules Standard rules

    The constraints imposedon the geometry

    of an integrated circuitLayout in order to

    guarantee that the circuitcan be fabricated

    with an acceptable yield.

    Some rules that must befollowed to ensure theconformity of the cells

    made. Therefore to bepractical to use in big

    arrays

    1_ Size rules

    2_ Separation

    rules

    3_ Overlap rules

    Rules for Stdcells

    1_Naming Conventions.

    2_Cover Layers

    3_Enclosure of abutmentbox.

    4_Cell Height.

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    Device

    Geometries

    5th Step: Physical Verification

    Layout

    Database

    DRC

    LVS

    ERC

    PEX

    Extracted

    Netlist

    SchematicNetlist

    Parasitics

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    6th Step: Delay equation derivation

    Rise time,tr= time for a waveform to rise from 10% to 90% of its steady-state value

    Fall time,tf = time for a waveform to fall from 90% to 10% of its steady-state value

    Edge rate,trf= (tr+ tf)/2

    Propagation delay time = maximum time from input crossing 50% to the output crossing 50% (worst case)

    Contamination delay time = minimum time from input crossing 50% to the output crossing 50% (best case)

    The gate thatcharges or dischargesa node is called thedriver and the gates and wires being driven are

    called the load

    Dabs = d *

    The term timing model is used to describe delays outside logic cells while the term delay

    model is used to describe delays inside logic cells.

    These terms are not standard and often people use them interchangeably.

    h ff i D l

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    parameters that affect propagation Delay

    The delay is usually quoted assuming typical process parameters

    and worst-case environment (low power supply voltage and high temperature)

    Supplyvoltage

    Temper-ature

    Fan-outloading

    Inter-connectloading

    Input-transition

    Time

    Timingconstraint

    Process

    variation

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    Combinational Gate Delay Model

    The delay of a logic gate is composed of the delay due to parasitic delayp(no load delay)

    and the delay due to the loadf( effort delay). It can be written as:

    pis theparasitic delayinherent to the gate whenno loadis attached;

    f is theeffort delaythat depends on thecomplexityandfan-outof the gate.

    The logical effort and parasitic delay can be estimated either by using RC models or extracted bycurve-fitting simulated data.

    Le logical effort is the ratio of the input capacitance of the gate to the input capacitance of aninverter that can deliver the same output current

    A gate drivingh identical copies of itself is said to have an electrical effort of h

    If the load isnot identicalcopies of the gate, the electrical effort can be computed as h = Cout/ Cin

    d = f + p

    f = g * h

    Gate delay = no-load delay + K * Cload

    In general, a gate delay is given as follows :

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    Final Step:Tapeout Flow

    Layout

    Database

    Schematic

    Netlist

    Bonding

    Diagram

    Verification

    GDSII File

    CDTAs Clean Room

    Stream Out

    C ll d t ti

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    Cells documentation

    It consists in generating a final datasheet for the specified design(cells) by reporting the characteristics according to a user-defined

    method and attaching graphs (symbols) and plots together in populardocument formats

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    Observations

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    Observations

    Confused by the chosen cells ( many cells are

    useless in the nearest future & others are out ofdate),

    no information is available about synthesizer &

    PNR constraints on Cells,missed tool for cell characterization &documentation utility

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