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11
Semiconductor Physics and Devices : Basic Principles
3rd Ed. Donald A. Neamen, McGraw-Hill
, 3rd Ed. 5 ,
Chapter 1
Chapter 2
Chapter 3 Chapter 3
Chapter 4
Chapter 5
Chapter 6
Chapter 7 pn
Chapter 8 pn Chapter 8 pn
Chapter 9 -
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1 1
1 1
(1)
1.1
Resistivity() () ()
(conductor) 10-3 [-cm] (metal)(conductor) 10 3 [-cm] (metal)
(semiconductor) 10-3 ~ 108 [-cm]
(insulator) 108 [-cm] (insulator),
(dielectric)(dielectric)
, , , ,
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1 1
(2) : IV III V II VI (2) : IV, III- V, II- VI elemental
semiconductor( )
IV
() Si , Ge
compound semiconductor( ), intermetallic semiconductor( )
2
(: binary)
( )SiGe(IV-IV), GaAs(III-V), ZnS(II-VI),
(: ternary)(: ternary)
AlxGa1-xAs(III-III-V),
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1 1
1 2 1.2
,
(a) (amorphous) :
(b) (polycrystalline, polycrystal) : single crystal (grain)
(c) (crystalline single crystal) : (atom) (c) (crystalline,
single crystal) : (atom)
* single crystal .
* (energy band) .
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1 1
1 3 1.3
1.3.1
(lattice) : (unit cell) : volume (unit cell) : volume (primitive
cell) : unit cell (unit vector) : unit cell
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1 3 2
1 1
(cubic lattice)
1.3.2
(Si l C bi SC)
(F C t d C bi FCC)
(B d C t d C bi BCC)(Simple Cubic, SC)
# a : (lattice constant)
(Face-Centered Cubic, FCC) (Body-Centered Cubic, BCC)
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1 3 3 (Miller Index)
1 1
1.3.3 (Miller Index)Miller Index :
Miller Index i) crystal axis() .ii) .
iii) .
Miller Index (1) Miller Index
( h k l ) : 1 ( h k l ) : 1 { h k l } :
*() { 1 1 1 } { 2 2 2 }
(2) Miller Index[ h k l ] : 1 < h k l > :
*() < 1 0 0 > < 2 0 0 >
# C bic lattice ( h k l ) [ h k l ]# Cubic lattice ( h k l ) [ h
k l ]
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1 3 4 (Diamond structure)
1 1
1.3.4 (Diamond structure)Diamond C() single crystal
Diamond diamond structure
C C
#
Si Ge single crystal diamond structure
# . , , . 4
() a=5.43, 51022 atoms/cm3 for single crystal silicon
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1 1
- compound : Zincblende lattice
: GaAs
II-VI compound : Wurtzite lattice
: ZnS
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1 1
1 4 1.4
(ionic bond) : +
) Na+ + Cl- NaClNa : 1S2 2S2 2P6 3S1Na : 1S2 2S2 2P6 3S1
Na+
Cl : 1S2 2S2 2P6 3S2 3P5
Cl-
(metallic bond) : +
)
-
(Covalent bond) :
1 1
(Covalent bond) : (Si, Ge)
#.
Van der Waals (Covalent bond) :
) HF (dipole interaction)
*. Compound Semiconductor : Ionic bond covalent bond (GaAs,
)
) HF (dipole interaction)
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1 1
1 6 1.6
Czochralski method
Inert gas in
Pull shaft
G i
Quartzcontainer Seed crystal
Si ingot
Growingcrystal
Quartzcrucible
RFinduction coil
Graphitesusceptor
Si
induction coilsusceptor
Inert gas out
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1 1
#) Si wafer
