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Nuremberg, Germany, 20 – 22 May 2014 Short Descriptions Proceedings Module Technologies I The Next Generation 6.5 kV IGBT Module with High Robustness Kenji Ota, Kenji Hatori, Kenji Hatori, Yasuhiro Sakai, Shuichi Kitamura, Tetsuo Motomiya, Yumie Kitajima, Shinichi Iura, Hiroshi Yamaguchi, Kazuhiro Kurachi, Mitsubishi Electric Corporation, J The high robustness 6.5kV IGBT module of the next generation chip set of 7th IGBTs and diodes is presented in this paper. To increase the current rating, the new technologies are adopted for the new IGBTs and diodes. By adopting these technologies, large current of 4500A (4.5 x IC(nom)) is successfully turned off. Therefore, it is confirmed that the current rating of the new 6.5kV IGBT module is able to be increased up to 1000A from 750A of conventional one, while it keeps high robustness. 7th Generation IGBT Module for Industrial Applications MiyazawaMasaomi, Mitsuharu Tabata, Tomohiro Hieda, Hiroki Muraoka, Mitsubishi Electric Corporation, J; Thomas Radke, Mitsubishi Electric Europe, D In this paper, the technologies applied to the 7th generation industrial IGBT modules with miniaturized size and reduced weight is introduced. For the chip technology, latest structure 7th generation diode and 7th generation IGBT are applied, realizing a reduction of static and dynamic losses. For the packages, a novel insulation and heat radiating structure will be applied to expand the chip mounting area. As a result, the maximum current rating of the module is possible to reach 200% on the same package size. The module weight is possible to reduce by 45% from same current rating of previous module structure. An Intelligent Power Module with High Accuracy Control System and Direct Liquid Cooling for Hybrid System Keiichi Higuchi, Akio Kitamura, Hirohisa Arai, Takeshi Ichimura, Hiromichi Gohara, Akira Nishiura, Fuji Electric, J, Peter Dietrich, Fuji Electric Europe, D We have developed an intelligent power module with high accuracy control system and direct liquid cooling for Hybrid Electric Vehicle and PHEV Plug-in Hybrid Electric Vehicle. An Aluminum direct liquid cooling structure makes the thermal resistance improve over 20% compared to the conventional indirect liquid cooling structure. And the high accuracy control system with CPU in the gate drive control circuit . All the data of the system is communicated to the ECU. Special Session “HVDC” Calculating the Harmonics at the Connection Point of a Modular Multilevel HVDC Converter Mike Dommaschk, Marcos Pereira, Jörg Dorn, Dietmar Retzmann, Siemens, D This paper shows a method to describe the behaviour of the so called HVDC PLUS modular multilevel converters, in the way they are presently applied, by means of harmonic impedances, leading to linear time invariant control models. This is then used to calculate the harmonic voltages which appear at the point of common coupling (PCC) as a result of the background harmonics and the harmonics which are introduced by the converter itself. This work outlines the influence of several factors like modulation degree, power factor, semiconductor conducting voltage drop, switching frequency and blocking time. New Thyristor Platform for UHVDC ( >1 MV ) Transmission Jan Vobecky, Thomas Stiasny, Virgiliu Botan, Karlheinz Stiegler, Urban Meier, ABB Switzerland, CH; Marco Bellini, ABB Corporate Research Center, CH New thyristor platform with voltage ratings 6.7 kV, 7.2 kV and 8.5 kV enables an optimal design of converter valves with the DC link rating voltages > 1000 kV. Full utilization of 6" wafers and optimized cathode layout improved the ON-state current ratings by » 20% compared to prior art thanks to the reduced ON-state voltage by 10% for. This 2nd generation 6" HVDC PCT technology is attributed by improved VT - Qrr technology

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Page 1: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

Short Descriptions Proceedings Module Technologies I The Next Generation 6.5 kV IGBT Module with High Robustness Kenji Ota, Kenji Hatori, Kenji Hatori, Yasuhiro Sakai, Shuichi Kitamura, Tetsuo Motomiya, Yumie Kitajima, Shinichi Iura, Hiroshi Yamaguchi, Kazuhiro Kurachi, Mitsubishi Electric Corporation, J The high robustness 6.5kV IGBT module of the next generation chip set of 7th IGBTs and diodes is presented in this paper. To increase the current rating, the new technologies are adopted for the new IGBTs and diodes. By adopting these technologies, large current of 4500A (4.5 x IC(nom)) is successfully turned off. Therefore, it is confirmed that the current rating of the new 6.5kV IGBT module is able to be increased up to 1000A from 750A of conventional one, while it keeps high robustness. 7th Generation IGBT Module for Industrial Applications MiyazawaMasaomi, Mitsuharu Tabata, Tomohiro Hieda, Hiroki Muraoka, Mitsubishi Electric Corporation, J; Thomas Radke, Mitsubishi Electric Europe, D In this paper, the technologies applied to the 7th generation industrial IGBT modules with miniaturized size and reduced weight is introduced. For the chip technology, latest structure 7th generation diode and 7th generation IGBT are applied, realizing a reduction of static and dynamic losses. For the packages, a novel insulation and heat radiating structure will be applied to expand the chip mounting area. As a result, the maximum current rating of the module is possible to reach 200% on the same package size. The module weight is possible to reduce by 45% from same current rating of previous module structure. An Intelligent Power Module with High Accuracy Control System and Direct Liquid Cooling for Hybrid System Keiichi Higuchi, Akio Kitamura, Hirohisa Arai, Takeshi Ichimura, Hiromichi Gohara, Akira Nishiura, Fuji Electric, J, Peter Dietrich, Fuji Electric Europe, D We have developed an intelligent power module with high accuracy control system and direct liquid cooling for Hybrid Electric Vehicle and PHEV Plug-in Hybrid Electric Vehicle. An Aluminum direct liquid cooling structure makes the thermal resistance improve over 20% compared to the conventional indirect liquid cooling structure. And the high accuracy control system with CPU in the gate drive control circuit . All the data of the system is communicated to the ECU.

Special Session “HVDC” Calculating the Harmonics at the Connection Point of a Modular Multilevel HVDC Converter Mike Dommaschk, Marcos Pereira, Jörg Dorn, Dietmar Retzmann, Siemens, D This paper shows a method to describe the behaviour of the so called HVDC PLUS modular multilevel converters, in the way they are presently applied, by means of harmonic impedances, leading to linear time invariant control models. This is then used to calculate the harmonic voltages which appear at the point of common coupling (PCC) as a result of the background harmonics and the harmonics which are introduced by the converter itself. This work outlines the influence of several factors like modulation degree, power factor, semiconductor conducting voltage drop, switching frequency and blocking time. New Thyristor Platform for UHVDC ( >1 MV ) Transmission Jan Vobecky, Thomas Stiasny, Virgiliu Botan, Karlheinz Stiegler, Urban Meier, ABB Switzerland, CH; Marco Bellini, ABB Corporate Research Center, CH New thyristor platform with voltage ratings 6.7 kV, 7.2 kV and 8.5 kV enables an optimal design of converter valves with the DC link rating voltages > 1000 kV. Full utilization of 6" wafers and optimized cathode layout improved the ON-state current ratings by » 20% compared to prior art thanks to the reduced ON-state voltage by 10% for. This 2nd generation 6" HVDC PCT technology is attributed by improved VT - Qrr technology

Page 2: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

curve, maximal rating current and tq. Valve designers can choose between the rating current up to IT = 6.25 kA with more serially connected 6.7 or 7.2 kV PCTs or up to IT = 5 kA with less 8.5 kV serially connected PCTs. New 4.5 kV IGBT and Diode Chip Set for HVDC Transmission Applications Josef Georg Bauer, Matthias Wissen, Thomas Gutt, Frank Pfirsch, Jürgen Biermann, Infineon Technologies, D, Carsten Schäffer, Gerhard Schmidt, Infineon Technologies, A This paper presents the development of a new 4.5 kV IGBT and an diode for HVDC application in a IHM-B package. The IGBT and diode performance is focused on very low on state voltages, fast turn on switching behavior of the IGBT especially for high voltage and high current and simultaneously high robust short circuit performance. Furthermore an extremely high IGBT and diode robustness during over current turn-off is realized and long term stability is demonstrated. A Fast Switching, Scalable DC-Breaker for Meshed HVDC-SuperGrids Yeqi Wang, Rainer Marquardt, University of the Federal Armed Forces Munich, D Nominated for the Young Engineer Award The increasing importance of electric energy and the necessary shift from fossil fuels to regenerative sources imposes great challenges for the High Voltage Grid. A large meshed HVDC-SuperGrid has been proposed by several experts as the best solution. The following paper deals with the requirements of the main components of such a grid with focus on their fault handling abilities. A new concept for a fast switching DC-Breaker is presented and investigated.

Drives for Power Converters Maximum Power Limit for Withstand Insulation Capability of IGBT/MOSFET Gate Drivers Bernhard Strzalkowski, Analog Devices, USA The power density of modern inverters rise continuously as performances of MOSFET/IGBT and of gate drivers increase. Unpredictable system fault can cause power switch desamage. Moderne gate drivers provide small form factor as electrical isolation is integrated on the chip in form of micro-transformers. Therefore the gate driver isolation safety performance needs to be investigated and validated in the worst case, when power switches destruct. Proportional Driver for SiC BJT’s in Electric Vehicle Inverter Application Sophia Frankeser, Sebastian Hiller, Josef Lutz, Chemnitz University of Technology, D; Konrad Domes Fraunhofer IISB, D SiC BJT base drive units become interesting lately. This paper introduces a strategy to minimize driving losses while maintaining good dynamic switching behavior. Especially in inverter application for electrical drive on-state losses can be minimized. On-line Tj monitoring Sensor Embedded on VSI Driver Board Application on a 5kW High Speed PMSM for Aeronautic "Blowing-fan" Frédéric Richardeau, Matthieu Morvan, Franck Mosser, University of Toulouse, F; Pascal Rollin, Sylvain Poignant, Technofan, F The on-line thermal monitoring on power device appears to be an interesting issue to manage the safe operating area of converter and to prevent the ageing of the device's packaging. In this submission, authors present the design and the results of an indirect and an on-line Vce0(Id sense) thermal monitoring applied to one IGBT and included in a PMSM blowing fan VSI. This converter is dedicated to an aeronautic application. An interesting outcome is the integration capability of the proposed sensor as an ASIC and afterward embedded on the driver board as a smart driver. Real-Time Adjustable Gate Current Control IC solves dv/dt Problems in Electric Drives Wolfgang Frank, Andre Arens, Infineon Technologies, D; Stephan Hörold, Infineon Technologies, A The tuning of commutation speed of currents between freewheeling diodes and IGBT plays an important role in EMI behavior of power electronics. High dv/dt means also a large stress for the motor winding insulation

Page 3: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

and motor bearings and brings high EMI filtering effort. A novel gate drive IC is presented, which offers a real-time adjustment for dv/dt in respect of the switching waveforms. The paper shows, that the IC allows to target new design tradeoffs in the application. Power Quality Solutions Robust Control of Current Source Rectifier for UPS Applications Marco Crespan, Lorenzo Giuntini, Ivan Furlan, Silvio Colombi, General Electric Consumer & Industrial SA, CH UPS provide protection to sensitive loads, and transformer-based double-conversion provides top protection. Thyristor-based rectifiers offer suboptimal input performance, while Current Source Rectifier (CSR) offers unity power factor operation. This paper details the design and validation of control and protection algorithms of a CSR for UPS applications. A new Line Filter Design strategy for Fast Switching Grid Connected Inverters Marek Galek, Manuel Blum, Siemens, D This work presents a new method for predicting the differential mode noise in voltage switched inverters with increased operating frequencies. The presented method will be used to determine the minimal attenuation for the required EMI filter in order to achieve an optimal design. Half Wave Bridge AC/DC Converters – From diode rectifiers to PWM multilevel converters Nicola Serbia, Marino Pompeo, Philippe Ladoux, University of Toulouse, F In this work a particular association of AC/DC multilevel converters is proposed to update classical half wave diode or thyristor rectifiers in the frame of Medium and High Power applications. After a brief introduction on the classical half wave rectifier using a zigzag transformer a topology based on cascaded H bridges is proposed to replace the pre-existing converter and by keeping the voltage values. Simulations validated the study for a MV application. Efficiency and Lifetime of an Active Power Filter with SiC-MOSFETs for Aerospace Application Sebastian Liebig, Liebherr Elektronik, D; Josef Lutz, Chemnitz University of Technology, D Conventionally, power electronic devices in the More Electrical Aircraft (MEA) use autotransformer rectifier units and active front-ends to generate the DC-link voltage. An interesting alternative is the parallel active power filter, which offers a higher power density. This paper investigates the overall efficiency with NPT-IGBT respectively SiC-MOSFET power stage and reviews the lifetime of power modules taking in to account the mission profile and number of active / passive cycles. Control Techniques in Intelligent Motion Sensorless Control of Short Stator Permanent Magnet Synchronous Linear Machines – A Renewed Approach Sebastian Ebersbeger, Bernhard Piepenbreier, University of Erlangen-Nuremberg, D This paper presents a novel flatness-based two-degree-of-freedom (2DoF) sensorless position control scheme for short stator permanent magnet synchronous linear machines (PMSLM) using test current signal injection and compensation for differential cross-coupling inductances. The control signals of the current controllers are used to estimate the primary position and speed. The flatness-based 2DoF control is applied to the superimposed control circuits, too. Harmonic Current Control for Transverse Flux Machines Jan Klöck, W. Schumacher Technical University of Braunschweig, D This paper presents a single-phase current control for Transverse Flux Machines (TFM). The disturbance in the current control loop is identified based on a lumped parameter model. A harmonic control scheme provides disturbance rejection for the fundamental frequency as well as their harmonics.

Page 4: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

High Dynamic Rotor Oriented Current Control for Permanent Magnet Synchronous Machines with Saturation Characteristics Tobias Gemaßmer, Jan Richter, Mathias Schnarrenberger, Michael Braun, KIT Karlsruhe Institute of Technology, D Nominated for the Best Paper Award This paper presents a new approach to adapt classic linear current control design to permanent magnet synchronous machines with saturation characteristics. All needed parameters for the current controller are online calculated from stationary machine measurements. The additional effort compared to control of linear machines is kept as low as possible in order to meet user-oriented requirements. The developed current controller is verified by experimental results. Novel Evaluation of a Velocity Controller for Sensorless Vector Control of S-PMSM, using a Motor-Load Coupled System with Different Dynamic-Load Curves Juan Carlos Ramirez Martinez, Georg Jaskowski, Kollmorgen D; Heiko Schmirgel, External Consultant The implementation of a well-known vector control scheme for a S-PMSM with a sensorless algorithm based on the estimation of Back-EMF is here described. While the control scheme is known, the evaluation here presented is novel, extensive and developed is a motor-load coupled system. here different kinds of torque-velocity curves are applied so that the characteristics are manipulated and the response and robutness of the sensorless is analyzed.

New Materials in Packaging Hybrid Substrate - A Future Material for Power Semiconductor Modules Xinhe Tang, Andreas Meyer, Karsten Schmidt, Ulrich Völler, Manfred Götz, Curamik Electronics, D This paper introduces a hybrid substrate comprising of copper, ceramic and aluminum that combines the thermal and electrical performance of the copper with the corrosion resistance of aluminum using a ceramic dielectric. The development of such a hybrid substrate by bonding aluminum to the back side of DBC using an adhesive has been reported. Vertical Integration Power Modules for Double Sided Cooling Applications using Aluminium Conductors and Thick Film Dielectrics Chris Burns, AB Mikroelektronik, A Vertical integration power modules for double sided cooling applications increases power density while reducing parasitic inductances which create robust solutions for automotive applications. By using cost effective materials with flexible and innovative thick film processes high power, low cost, small footprint power modules are achieved. Influence of Danfoss Bond Buffer and Cu-wire Bonds on the Electrical Switching Behaviour of IGBTs Guido Mannmeusel, Frank Osterwald, Marco Bäßler, Henning Ströbel-Maier, Danfoss Silicon Power, D; Martin Becker, University of Applied Sciences Kiel, D Danfoss Bond Buffer has been developed to fulfil ambitious power module lifecycle requirements of the automobile and renewable energy markets, which cannot be achieved with today's bonding and joining technologies. In this work we will show the influence of a new bonding and joining technology called "Danfoss Bond Buffer (DBB)", on the electrical characteristics of semiconductors in power modules.

IGBT Improvement Next Generation 1700V IGBT and Emitter Controlled Diode with .XT Technology Andre Stegner, Thomas Auer, Alexander Ciliox, Infineon Technologies, D We present the superior performance characteristics of the new 1700V IGBT and diode generations of Infineon Technologies. At roughly 30% higher current for the same module footprint, these 5th generation devices reach the same on-state voltages and switching losses per Ampere as their predecessors. We

Page 5: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

implement the. XT technology in the new 1700V power module generation, providing the established module lifetime at increased power density and higher thermal stress (Tvjop=175°C). 1200V Class Reverse-Conducting IGBT Optimized for Hard Switching Inverter T. Heinzel, Fuji Electric Europe GmbH, D; Kouta Takahashi, Yasuyuki Kobayashi, Osamu Ikawa, S. Yoshida, S. Noguchi, H. Kuribayashi, N. Nashida, H. Kobayashi, K. Mochizuki, Ikeda, Fuji Electric, J; We fabricated a 1200V RC-IGBT by our latest thin wafer process, and the RC-IGBT has better trade-off between conduction loss and switching loss than our latest conventional IGBT+FWD. Next we calculated the hard switching inverter loss and the junction case temperature rise (dTjc). The calculation result shows that the optimized RC-IGBT inverter can handle 35% larger current density than the conventional IGBT+FWD inverter under the condition of same dTjc. Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit Giovanni Busatto, Carmine Abbate, Annunziata Sanseverino, University of Cassino and Southern Lazio, I; Cesare Ronsisvalle, Fairchild Semiconductor, D Giovanni Busatto got the laurea degree in electronic engineering in 1983 at the University of Naples, Naples, Italy. He is primarily specialized in the field of power device modelling and characterization. He is full professor of Power Electronics and Telecommunication Electronics at the University of Cassino, Cassino, Italy.

Sensors An IGBT Driver Concept with Integrated Real-time Junction Temperature Measurement Marco Denk, Mark-M. Bakran, University of Bayreuth, D Within this paper the drawbacks of currently used methods to measure the junction temperature of an IGBT power module during inverter operation are summarized. Based on this a modified IGBT driver concept is presented, which is capable to measure the junction temperatur of a standard IGBT module using a high-frequency superimposed negative gate voltage. Starting from the theoretical backgrounds the developed driver concept is described and experimental results will be shown. New Open-Loop Current Transducers with near Closed-Loop Performance David Jobling, LEM Switzerland SA, CH Open-loop current transducers using silicon Hall effect devices are based on a simple design concept and are inexpensive to manufacture, but their simplicity gives rise to some performance limitations. The limitations may be overcome by using a closed-loop architecture, but with the penalty of a more complex and costly design. This paper describes new open-loop transducers using a dedicated ASIC which bridge the performance gap between today's open-loop and closed-loop transducers. Mosolver™ - Integrated Motor and Resolver - Operational Donald Labriola II, QuickSilver Controls, USA Mosolver - Motor with Integrated Resolver Robust and low cost closed loop position control using sensing coils within the motor to detect position via motor-stator magnetic interactions including the action of the PWM drive. Characteristics of a functioning system.

Capacitors Progress in Performance of High Voltage Aluminum Electrolytic Capacitors Victor Andoralov, Christer Larsson, Leif Eliasson, KEMET, S Complex improvements to the key parameters of high voltage aluminum capacitors allow the achievement of life time of at least 3500.h at 125.oC, low ESR and maximum drift of 10% for the main characteristics during the life time result from using the electrolyte. Special design techniques give the capability of extremely high ripple current of around 14.A at 105.oC for a 150mF, 200V capacitor.

Page 6: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

High Reliability Design Considerations for Power Supply Capacitors Ussama Margieh, AVX GmbH, D; Chris Reynolds, AVX Corporation, USA; Slavomir Pala, AVX Corporation, CZ This paper discusses the effect of capacitors on output power quality. It evaluates and provides a comparison of different capacitor technologies, their high reliability qualification availability from COTS+ to space level, and their impact on the output filtering capabilities in switching power supplies primarily used for mission critical applications. Converter Control Finite Set Model Predictive Control with Imposed Target Dynamic Daniel Glose, Saeid Saeidi, Ralph Kennel, Technical University of Munich, D The so called Finite Set Model Predictive Control (FS-MPC) is well suited to control of power electronics since it inherently includes the discrete nature of power switches in the optimization. In this paper a new scheme of FS-MPC with imposed target dynamic is investigated for control of a permanent magnet synchronous motor (PMSM). Inserting the target dynamic enables reducing switching frequency at the same time reducing the torque and flux ripples. Practical implementation on an FPGA-based experimental setup is investigated and measurement results are represented. Advanced Control Scheme to Improve the Efficiency of 3-Level Active Front End Inverters for Servo Drives Markus Höltgen, Jens Onno Krah, Cologne University of Applied Sciences, D Nominated for the Young Engineer Award Utilizing the burst mode well known from single phase rectifiers with active power factor correction (PFC) can improve the energy efficiency of 3-phase active front end converters and can also simplify the converter schematics. Especially if the current smoothing inductors are not inverter integrated replacing the 3-phase line voltage measurement by reliable line voltage estimation is an advantage. Interleaved Switching of Symmetrical Six Phase Drives Daniel Glose, Lukas Leitner, Ralph Kennel, Technical University of Munich, D Nominated for the Young Engineer Award Due to their higher amount of phases and switching elements, six-phase drives provide an increased reliability through redundancy and additional degrees of freedom for control. In total, 64 voltage vectors can be generated, including nominal and medium length vectors. An interleaved variant of conventional space vector modulation based on a decomposition technique is discussed here.

Renewable Energy Systems

Improved Modulation Strategy for a LLC-type Resonant Converter in a Solar Application Christian Peter Dick, Patrick Deck, Cologne University of Applied Sciences, D

This paper presents an improved modulation strategy for a LLC-type resonant converter. A new hybrid modulation technique including frequency and phase-shift variation, depending on a current zero-crossing detected in the resonant tank, is presented. Using only one control parameter, a significantly increased input to output voltage ratio can be set without losing soft switching. A complex state machine is presented including safety features. Experimental results demonstrate functionality.

Efficient and Compact 50kW Gen2 SiC Device Based PV String Inverter

John Mookken, Binod Agrawal, Cree, USA; Jimmy Liu, Cree, CN Development and testing of an all SiC MOSFET and Schottky diode based 50kW PV inverter with a very high power to weight ratio with 2-ch MPPT tracking boost stage and T-type 3-level inverter stage using commercially available components.

Page 7: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

System Benefits for Solar Inverters using SiC Semiconductor Modules Ulrich Schwarzer, Stefan Buschhorn, Klaus Vogel, Infineon Technologie, D A price battle among PV power system providers due to beating-down inverter’s costs can be observed. Therefore different technical approaches have to be evaluated in overall power inverter system cost to get cost-optimized solutions. In this paper technical and system cost benefits in a grid-connected, transformerless multi-string PV inverter box by replacing its standard silicon (Si) IGBT modules with fast switching siliconcarbide (SiC) device modules will be shown and discussed. PV Inverter Requirement Updated for LVRT Capabilities under Recent Grid Codes Legislation José Alberto Vite Frías, Jesús Muñoz-Cruzado Alba, Jesús; Javier Villegas Núñez, Ezequiel Rubén Hernández, GPTech, ES Establishment of MTR for utility-connected PV system allows better integration for generation system in the electric grid. In this paper a PV inverter requirements update is presented for recent grid codes, focus on LVRT legislation. Efficiency of Selected Generator-Converter-Topologies for Wind and Water Power Plants Markus Urech, Felix Jenni, Martin Wiederkehr, University of Applied Sciences Northwestern Switzerland,CH The efficiency of a given generator-converter-topology depends on the distribution of the available energy at the site of the power plant. To determine the efficiencies of selected generator-converter-topologies, matalb models for generators and converters were developed. Data (wind speed and flow volume), covering at least one decade of measurements, were fed into these matlab models. Based on the resulting simulations, the parallel-converter-topology, developed at the UAS-NS, proves to have the highest efficiency for small water power plants. Arc Fault Detection using Rogowski Coils Gerard Healy, Pulse Electronics, IE, Glenn Roemer, Pulse Electronics, USA Arc fault failures in solar power inverters have become a recognized problem and arc fault detection will soon be required for all string inverters. Accurately detecting arc faults requires sensing the current for a specific signature waveform. Rogowski coils are ideal for the signal sensing because they are immune to DC current, have unlimited saturation characteristics, and are fully isolated. This paper will detail how a Rogowski coil can be used to detect arc faults and to provide a system with the information that a fault has occurred so it can be arrested. Robust Induction Generator Concept with Parallel Exitation Christian Meier, Felix Jenni, Roger Schlumpf, Tobias Strittmatter, University of Applied Sciences Northwestern Switzerland, CH The increasing demand of renewable decentralised energy sources asks for specialised generator topologies. The presented generator concept for small power plants uses a squirrel cage induction machine. The excitation is produced with a converter parallel to the machine. This converter is also used to establish synchronous conditions for the connection of the machine to the grid and to adjust the power factor. The concept has several advantages to other generator concepts: It combines the advantages of synchronous machines (SM) with the robustness of squirrel cage induction machines (IM). The concept has successfully been proofed in the lab. Ultra Low Voltage DC-to-DC Converter for Solar Applications Karl Edelmoser, Felix Himmelstoss, Vienna University of Technology, AT In the field of electrical solar power conversion there are some applications for ultra-low voltage converters operating directly from one solar cell. With its MP-Point in the range of 0.55V / 10A to 20A they are able to produce up to 10W of electrical power. Especially in the field of fluorescent lighting and in case of decentralized control applications, where high DClink voltages are necessary a simple and rugged converter for voltage level adaptation is needed. EMC is also an important topic. The major goal of the design described in this paper was to build up a converter starting from below than 300mV with a peak power of 12W with the requirement of a most simple structure. The proposed approach discussed in this paper uses a combined structure of auxiliary self- and main power supply to fulfill the given requirements: Minimized input current

Page 8: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

ripple of the cells, cell-optimized maximum power point tracking and optimal power quality of the supplying grid. Experiment on DC Circuit Breaker by Improved Magnetic Arc-Extinguisher Circuit Tae Jin Kim, Ju Won Baek, Myoung Ho Ryu, Dong Wook Yoo, Keri, KR Using the DC voltage source, a DC distribution is less losses, reducing EMI than AC distribution. But, DC distribution has not a voltage zero point in a period. Thus when a current cut off, a arcing is occurred in circuit break. Arcing time is longer than AC case. We are proposed the improved DC circuit breaker model reducing arc extinguish time. And we show this DC circuit breaker’s performance by experiment. Existing and Future Ultracapacitor-Applications in the Renewable Energy Market Stefan Werkstetter, Maxwell Technologies, D; R. Shaw Lynds, Maxwell Technologies, USA Modern applications in the renewable energy market have demanding requirements both on their components and on the operation strategy. The costs for electricity generated by wind and solar can reach the electricity generation costs of conventional power plants [1]. This results in the demand for components with both high reliability and high efficiency. Resistorless Precharging of Boost PFCs by Phase Angle Control of Thyristors Frank Schafmeister, Michael Hufnagel, Peter Ide, Delta Energy Systems, D Most AC/DC Power Supply Units (PSUs) and automotive on-board chargers (OBCs) which operate directly from the AC mains employ PFC boost converter as front-end stage. The PFC stage regulates the AC side power factor close to one and at the same time it also controls the DC-link voltage, i.e. the input voltage for subsequent converter stages, to an adjustable constant value. Most PFC stages operate in boost mode and therefore require a precharge circuit for limiting the initial current required to charge up the DC-link capacitor (from 0V to a value close to AC voltage amplitude) prior to the regular PFC boost operation. Conventionally current limiting during the precharge interval is facilitated by very bulky resistors which are bypassed by a kind of switch (relay or semiconductor based) when the regular boost operation starts. Both, switches and precharge resistors are extra components which are exclusively used for initial precharging only and do require a considerable volume and cost effort. This paper proposes a method to totally omit the precharge resistors and moreover simplify the switch implementation. With just replacing two rectifying diodes by thyristors and providing an appropriate phase angle control precharge functionality is reached. The proposed concept is finally verified by measurements on a 3.3kW prototype.

IGBTs Potential of RC-IGBT in Full Size Converters for Wind Energy Application David Weiss, Hans-Günter Eckel, University of Rostock, D Bi-Mode Insulated Gate Transistors (BIGTs) are a new class of power semiconductors which integrate the functionality of IGBT and free wheeling diode in one chip. The advantage of the BIGT depends strongly on the application. An application where the BIGT is advantageous is the full size converter for wind energy especially the generator side converter due to the low output frequencies of the generator in combination with the rectifier operation mode. Influence of the Charge Distribution on the Electrical Behavior of the BIGT Daniel Wigger, Hans-Günter Eckel, University of Rostock, D The BIGT is a hybrid structure which contains a conventional IGBT and a reverse-conducting IGBT. The current distribution betwenn these devices has an impact on the switching and on-state behavior. This distribution depends on the di/dt. At a high di/dt the current flows mainly in the pilot-IGBT and the transition of the RC-IGBT from bipolar to unipolar operation occurs at a higher current level. This lead to a different switching behavior and on-state behavior. Investigation of 1200 V Low Loss Enhanced-Planar IGBTs Viacheslav Muskatinev, Valentin Martynenko, Alexey Bormotov, Electrovipryamitel, RUS; Pavel Mashevich, Tatiana Kritskaya, Leonid Ischenko, Angstrem, RUS

Page 9: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

This report presents investigation results of 1200V IGBT modules, produced by JSC "Electrovipryamitel" with new IGBT and FRD chips that are being developed by JSC "Angstrem" New IHR Field Stop II IGBT technology, the best efficiency for high frequency Induction Cooking Applications. Vittorio Crisafulli, ON Semiconductor, D This paper presents a new analytical method for estimating the IGBT’s losses in induction cooking applications and a comparison between the latest IHR Field Stop II IGBTs technologies tailored for Induction cooking applications in a 2kW prototype. Experimental results will be shown at standard and high frequencies (up to 65 kHz) in a quasi-resonant single switch and a resonant half bridge Switching characteristics of modern 6.5kV IGBT/Diode Daniel Heer, Amr Khair Bayoumi, Infineon Technologies, D New IGBT generations, show significant differences regarding their control characteristics in comparison to Power MOSFETs. For a better understanding of the switching behavior of modern IGBTs, a detailed characterization is needed. The presented analysis allows a better understanding of the switching behavior by illustrating the effects of stored charge from the IGBT and the diode. Non-destructive analysis of an IGBT for switching simulation with the Charge Extraction Model Jörg Schumann, Hans-Günter Eckel, University of Rostock, D The Charge Extraction model (CEM) is a physical based IGBT model for circuit simulators. It describes the clear out of the plasma and takes the time derivative of the peak electrical field for the feedback between collector and gate. This physical approach allows to simulate even fast changes of the gate current during the switching transients correctly. CEM-simulation is suitable for evaluating different gate driving circuits. The evaluation of the gate drive without simulation is expensive and cannot be managed by the most existing models. The CEM can also contribute to a resource sharing testing of the IGBTs by simulating different intelligent gate control concepts. In this paper, it is described, how the parameters for the CEM can be extracted by non-destructive measurements and without using vendor know-how of the chip. A Robust and Automated Parameters Calibration Procedure for PSpice IGBT Models Domenico Cavaiuolo, Michele Riccio, Luca Maresca, Giuseppe de Falco, Gianpaolo Romano, Andrea Irace, Giovanni Breglio, University of Naples "Federico II", I In this work an automated calibration procedure for PSpice IGBT models is presented. The proposed solution is based on an best-fitting approach with a parameter-to-curve differential coefficients estimation. The effectiveness of the procedure is proven applying it to the standard IGBT Hefner model for a 600V PT-trench IGBT. Finally the reliability of the procedure is proven in an buck-converter application, where the IGBT power losses and circuit efficiency are evaluated. Source Modulation Technique Applied to Enhance the Short-Circuit Robustness of a PT-IGBT Luca Maresca, Michele Riccio, Giovanni Breglio, Andrea Irace, University of Naples "Federico II", I Carmelo Sanfilippo, Filippo Crudelini, Nabil El Baradai, Rossano Carta, Luigi Merlin, Vishay Intertechnology (Diodes Division), I For the first time, the SC robustness of a 600V Trench PT-IGBT with Source striped geometry is deeply analyzed using a calibrated 3D electro-thermal TCAD simulation procedure and experimental measurements. In order to improve the device SCSOA the influence of the Source modulation percentage and the introduction of a shallow recessed Body contact is analyzed. Results show that a careful design of the Source region is mandatory to prevent a premature thermally-induced latch-up. Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP™ 5 IGBTs Fabio Brucchi, Infineon, A; Forrest Zheng, Infineon, CN The demand for portable low cost welding machines, especially in developing countries, is increasing. In these machines, especially in MMA/TIG in power range from 1,5kW up to 4kW, discrete IGBTs and MOSFETs are broadly used. Mostly, these machines use hard switching topologies, like: TTF, Half Bridge and Full Bridge. Here, high operating frequency is seen as one of the most promising design trends to improve performances

Page 10: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

and to reduce cost at system level. Infineon's TRENCHSTOP™5 IGBT technology is the most promising candidate to match with this requirement [1]. These IGBTs can be selected to replace previous generation IGBTs, while operating at superior switching frequency, or to replace directly conventional HV MOSFETs keeping present modulation frequency up to 100 kHz in proper layouts. The present paper shows the potential of the TRENCHSTOP™ 5 technology when used in an optimized converter design. Indeed, simple "plug and play" approach in most cases wouldn't work due to potential issues induced by high switching frequency, like: high voltage overshoot at turn-off, oscillation at turn-on as well as degradation of EMI figures. In order to fully exploit the switching performance capability offered by this IGBT technology, especially in turn-off losses, the mechanical solutions and the PCB routings have to be optimized [2]. Furthermore, proposals on thermal design improvements and on innovative concepts, like resonant solutions and synchronous rectification which allow significantly increasing power density in a reasonable industrial cost, complete the paper. Simulations and Experimental Investigations of High Voltage Semiconductor Stacks for Ultra-High Current Commutation Alexey Grishanin, V. Martynenko, O. Frolov, Electrovipryamitel JSC, RUS; N. Yantsen, K. Nishchev, Ogarev Mordovia State University, RUS This report presents simulations and experimental investigation results of mechanical design of power semiconductor stacks on the base of reverse switched dynistors for ultra-high current commutation in pulse power engineering. MOSFETs P-channel Power MOSFETs working in Linear Zone: theoretical and experimental studies and comparison with N-channel devices Giuseppe Consentino, STMicroelectronics, I This paper implements a theoretical study of thermal instability phenomenon and shows experimental results achieved on P-channel power MOSFETs when working in Linear Zone. Using Application Loss Analysis as a Figure of Merit for MOSFET Selection Sanjay Havanur, Philip Zuk, Vishay Siliconix, USA This paper analyses the considerations that go into the selection of power MOSFETs for switching applications. Choosing the lowest available Rdson almost always results in more expensive as well as inefficient solutions, particularly in high voltage switching circuits used in AC-DC converters. Comparing Figures of Merit (FOM), either the traditional Rdson x Qg product or its variants with added parameters, does not lead to the optimum solution either. It is proposed that a simplified loss equation be derived as a weighted sum of relevant MOSFET parameters and used as an application specific FOM. The process is illustrated using high the power PFC converter as an example. It is demonstrated that different MOSFETs, with identical Rdson x Qg FOM, can have different performances based on their individual parameters and operating conditions. Analytical results are compared with data taken on a 1500 W PFC unit with power MOSFETs based on different technology platforms. The new ST Super-junction Technologies ideal for Resonant Topologies Luigi Abbatelli, Antonino Gaito, Ardita Giovanni, Stella Cristiano Gianluca, STMicroelectronics, I Power supply designers are now the necessity to increase the power density and have an efficient thermal management. An answer to this is in the resonant topologies that more often use the LLC resonant converter. For these topologies, the MOSFET parasitic capacitances can affect the total behaviors increasing switching losses and decreasing efficiency. Aim of this article is to compare the electrical performances of the two most recent ST MOSFET Superjunction technologies, MDmesh II PlusTM low Qg and MDmesh V technology respectively and compare them to the well-known Super-junction competition devices.

Page 11: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

MOSFET Technologies’ Key Parameters to improve the EMI Circuit Behaviour Filippo Scrimizzi, Giuseppe Longo, STMicroelectronics, D This article speaks about how the intrinsic capacitances of power MOSFET devices could have a relevant position on such item, and how by defining a parameter, function of them, is possible to estimate if a device could be affected by voltage oscillations and consequently become a source of electromagnetic interferences. MOSFET Selection and Drive Strategies for DC Solid State Circuit Breakers Stefan Schmitt, BLOCK Transformatoren-Elektronik, D Electronic circuit breakers use power electronic switches. These electronic switches, e.g. MOSFETs, can be used in linear operation to actively limit the failure current. Unfortunately nost modern power MOSFETs are not designed to for this operating mode and it is difficult to find a suitable component. This paper shows feasible component selection criteria for MOSFETs and in addition introduces an operating principle for electronic circuit breakers that does not rely on linear operation. A Physically Based Scalable SPICE Model for High-Voltage Super-Junction MOSFETs James Victory, Dongkook Son, Thomas Neyer, Kwangwon Lee, Edward Zhou, Jason Wang, Merhad Baghaie Yazdi, Fairchild Semiconductor, D Dr. Victory is a Distinguished Member of the Technical Staff for Fairchild, working on R&D of models for high power devices. He has 22 years experience in device modeling focusing on RF-analog and power technologies. He received his BSEE, MSEE, and Ph.D in EE from Arizona State University in 1990, 1992, and 1994 respectively. Dr. Victory has over 35 publications, including invited papers & workshop tutorials on modeling for RF, power, and analog technologies. He holds one US patent. SiC and GaN Comparison of Si/SiC Semiconductor Performance Using Experiment-based Simulation Tim Hilden, Lothar Frey, University of Erlangen-Nuremberg, D; Peter Jänker, EADS, D This paper evaluates the benefits of silicon carbide (SiC) switches in hard switched DC/DC-converters and compares them to traditional silicon (Si) based devices. SiC Mosfet for High Temperature Motor Driving Applications Sebastien Oge, Rémy Ouaida, Pierre Brosselard,Georges Peyresoubes, Thales Microelectronics, F; This paper presents the performances expected by using SiC Mosfets for motor drive applications in High Temperature environment. Static and dynamic characterization of SiC Mosfet dice with suitable packaging has been realized under varying temperature from +25°C to +250 °C. A specific ageing setup has been built to evaluate the lifetime of the devices in switching conditions at T > 250°C. The results permit to conclude in the performances reachable at complete power inverter level. Switching Losses Mechanisms of Unipolar Devices with Large Parasitic Capacitances Tobias Appel, Hans-Günter Eckel, University of Rostock, D An accurate evaluation of switching losses forces the splitting of losses into dissipated and stored energy. Also the negative energy of the forward recovery is important. Challenges in Switching SiC MOSFET without Ringing Helong Li, Stig Munk-Nielsen, Aalborg University, DK Switching SiC MOSFET without ringing in high frequency applications is important for meeting the ElectroMagnetic Interference (EMI) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design. Zero-Voltage-Switching Clamped Voltage DC/DC Buck Converter with SiC Power Devices Thomas Rump, Hans-Günter Eckel, University of Rostock, D

Page 12: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

Buck converter with 1200V-SiC JFET and Schottky diodes have significantly lower losses than Si IGBT solutions. But the voltages slopes exceed 50 kV/µs, which may cause electromagnetic compatibility problems. It is proposed to use a zero-voltage-switching clamped voltage DC/DC buck converter, which reduces the dv/dt to less than 10 kV/µs and further reduce the switching losses. Drawback are higher on-state losses. The circuit is tested in simulation and experiment. Economics of High Efficiency SiC MOSFET based 3-ph Motor Drive Julius Rice, John Mookken, Cree, USA This paper investigates the actual cost benefits of using SiC devices in traditional motor drives. SiC devices offer performance improvement such as lower switching losses, lower conduction losses and lower diode recovery losses. These performance improvements are measured to illustrate how they will offset the higher cost of SiC products in a 3-ph motor drive when compared to traditional Silicon IGBT devices today. Efficiency Improvement with GaN-Based SSFET as Synchronous Rectifier in PFC Boost Converter Jian Yang, RFMD, USA Efficiency Improvement with GaN-Based SSFET as Synchronous Rectifier in PFC Boost Converter Multi Megahertz Buck Converters Using eGaN® FETs for Envelope Tracking Johan Strydom, David Reusch, Efficient Power Conversion (EPC) Corporation, USA The latest family of high frequency enhancement mode gallium nitride power transistors (eGaN® FETs) is presented for use in multi MHz buck converters to address HF hard-switching power applications not practical with discrete MOSFETs, thus enabling applications such as envelope tracking. A number of 10 MHz buck converters are presented with voltages up to 42V and output power up to 40W. In this paper, the limitation to switching at these levels using discrete device are also discussed. Highly Efficient Low-Voltage DC-DC Converter at 2-5 MHz with High Operating Current Using GaN Gate Injection Transistors Hidekazu Umeda, Yusuke Kinoshita, Shinji Ujita, Tatsuo Morita, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda, Panasonic, J Winner of the Young Engineer Award A low-voltage DC-DC converter using GaN Gate Injection Transistors (GITs) demonstrates highly efficient operation at 2-5MHz with high output current. Reduction of the gate lengths of the GITs and optimized design of the field plates significantly improve the RonQg down to 19mOnC. The peak efficiency at 2MHz reaches 90% for the conversion from 12V to 1.2V, while the operating current can be increased up to 50A. The converter also can serve 5MHz operation with the peak efficiency of 81%. Prospects of GaN Devices in Automotive Electrification Samuel Araujo, Mehmet Kazanbas, Marita Wendt, Thiemo Kleeb, Peter Zacharias, University of Kassel, D In the context of increasing electrification of automobiles, power conversion and motor driving using GaN devices can be seen as one of the most interesting prospects for the next decades in order to achieve even more efficient and compact systems. This paper will firstly present an overview of properties from both low- and high-voltage rated GaN devices, tracing parallels with requirements in automotive systems. Critical issues like short-circuit capability will be experimentally tested, while performance benchmarking will be investigated in two selected applications.

Packaging, Modules, Reliability Low Inductance full SiC Power Module Satoshi Hatsukawa, Takashi Tsuno, Shigenori Toyoshima, Noriyuki Hirakata, Sumitomo Electric Industries, J Low inductance module design is required for a full SiC power module that can achieve a higher switching speed compared to conventional Si IGBT modules. Using a commercially available 3-D electromagnetic field simulator, the authors have designed and developed a low inductance full SiC power module of as low as 14 nH across the terminals - while an Si IGBT counterpart measures about 40 nH with the same switching

Page 13: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

voltage and current. Low-inductive Compact SiC Power Modules for High Frequency Operation Michael Meißer, Thomas Blank, KIT Karlsruhe Institute for Technology, D; Dean Hamilton, Philip Mawby, University of Warwick, GB The design, manufacture and electrical characterisation of full-SiC half-bridge power modules optimised for high frequency operation is presented in this paper. The modules consisting of stacked AlN DCB substrates are equipped with SiC MOSFETs and SiC JFETs. The low-inductive setup permits high switching frequencies. p² Pack – the Paradigm Shift in Interconnect Technology Christian Rössle, Thomas Gottwald, Schweizer Electronic, D Miniaturization of Power Electronic modules requires the minimization of losses and optimized power dissipation. With the p² Pack technology it is possible to build ultra-thin modules with a thickness of 1- 1.4 mm which have less losses and improved power dissipation characteristics by using embedding technologies and processes of the Printed Circuit Board industry. Novel Design Concept for Modular Multilevel Converter Power Modules Uwe Waltrich, Dirk Malipaard, Andreas Schletz, Fraunhofer IISB, D Nominated for the Young Engineer Award Modular multilevel converters are subdivided into identical submodules. Current high power systems for transmission (i.e. HVDC) consist of state of the art industrial semiconductor modules. Therefore great improvements are possible by optimizing the construction of the power modules for this special application. A promising concept is to silver-sinter the bottom switch directly onto the heat sink, which removes unnecessary isolation barriers. In this work the thermal resistances of different design concepts were simulated and compared to the state of the art. As a result, an improvement of 300% in the thermal performance is attainable, which was confirmed by measurements. Reliability Improvement of Large Area Soldering Connections by Antimony Containing Lead-Free Solder Harald Beyer, Venkatesh Sivasubramaniam, David Hajas, Erich Nanser, Franziska Brem, ABB Switzerland, CH Mechanical and microstructural investigations of soldering connections between Ni(P)-plated AlSiC baseplates and ceramic substrates with bare and NiAu-coated copper metallization using lead-free antimony containing solders are presented. The results from 'as soldered' conditions are compared with corresponding soldering connections using 62Sn36Pb2Ag solder and lead-free SAC-solders. Here the antimony containing solders exhibit significantly largest shear strength. Investigations on these soldering connections after ageing at high temperature are also presented. A Critical Review of Corrosion Phenomena in Microelectronic Systems

Stefan Wagner, Michael Töpper, Olaf Wittler, Fraunhofer IZM, D; Karin Höppner, Klaus- Dieter Lang, Berlin University of Technology, D Applications in the power electronics field imply some of the harshest environmental conditions for electrical components. Encapsulation technology by epoxy molding compounds is widely used for packaging integrated circuits of any kind. It is not a hermetic sealing method, but it provides a sufficient housing for most of the applications being a small sized and very low cost package. This paper gives a critical overview of corrosion induced degradation of microelectronic packages. Microstructural and Mechanical Analyses of Ag Sintered Joints

Constanze Weber, Matthias Hutter, Hermann Oppermann, Fraunhofer IZM, D; Klaus-Dieter Lang, Berlin University of Technology, D Ag-sintering was performed using different process parameters. Subsequently the microstructure of the sintered Ag-layer and the interfaces was studied. The results are basic knowledge to presume mechanical properties of the interconnection.

Page 14: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

New Compact-package Power Modules for Electric and Hybrid Vehicles (J1-Series) Mikio Ishihara, K. Hiyama, N. Miyamoto, T. Nakano, Mitsubishi Electric Corporation, J; Thomas Radke,

Mitsubishi Electric Europe, D This paper presents a new power semiconductor module (called J1-series) dedicated for Electric vehicle (EV) and Hybrid electric vehicle (HEV) power-train inverter and converter applications. Electric Vehicle DC-Quick-Charger Grid Load Assessment Philip Dost, Abdoulkarim Bouabana, Constantinos Sourkounis, EneSys Ruhr University Bochum, D This paper presents the effects of DC-Quick-Chargers for Electric Vehicles on the grid connection, including assessments of the grid relevant harmonics as well as the high frequency behavior in both voltage and current. Furthermore, the behavior of DCQCs is evaluated at different short-circuit-line dimensioning. The efficiency and reactive power is also taken into account. Electric Vehicle DC-Quick-Charger Security Abdoulkarim Bouabana, Philip Dost, Constantinos Sourkounis, Ruhr University Bochum, D This paper presents security aspects of a DC-Quick-Charger. They are evaluated and measurements conducted to ensure safe usage of the DC-Quick-Charger. These aspects target various facets of security, insulation, short circuit behaviour and further electrical assessments. IPMs, Drivers, Systems A Compact Intelligent Power Module with High Thermal Performance for up to 4kW Power Motor Drives Sungbum Park, Jeongsu Cho, Hyukdong Kwon, Daewoong Chung, LS Power Semitech, ROK The compact Intelligent power module, CIPOS-mini applies a thermal substrate, DBC (Direct Bond Copper) for high thermal performance and a Al wire bonding method for electrical and mechanical connection. The compact intelligent power module with high thermal performance offers the solution for high power motor drive application up to 4kW power New Industrial Series Transfer Mold MINI-DIPIPM with Integrated BSD and Temperature Measurement Function Yazhe Wang, Tomofumi Tanaka, Toru Iwagami Mitsubishi Electric, J A new industrial series transfer mold type mini DIPIPMTM developed for applications like general inverter and servo for small capacity industrial motor drive or package air conditioner is presented in this paper. The new DIPIPMTM is designed to compatible with current mini DIPIPMTM Ver.3 and Ver.4 package outline, while taken external BSD(Bootstrap Diode) chips and temperature measurement function(eg. thermistor) inside to help realize cost down for inverter drive system by reducing peripheral electronic parts and PCB board areas. By applying the VLD(Variation of Lateral Doping) structured 6.1th generation IGBT chip technology, both power loss and chip size are reduced compared with conventional mini DIPIPMTM products. And product line-up extended to 50A current rating with the same package size (Fig.1), which used to be 30A in present line-up. A New Low Loss MOSFET Intelligent Power Module for the Low Power Motor Drive Applications Junbae Lee, SungUn Shim, Taehyun Kim, Minsub Lee, Daewoong Chung, LS Power Semitech, ROK This paper describes the key features and electrical performance of the new MOSFET IPM. Development of New 1200V SPM® Smart Power Module for Industrial Motor Drive Applications Taesung Kwon, Seunghyun Hong, Jonghwan Baek, Sungil Yong, Fairchild Semiconductor, ROK This paper discusses the new 1200V SPM 2 module, which are optimized and intelligent integrated IGBT inverter modules for industrial motor drive applications. It utilizes the newly developed IGBT with the freewheeling diode, built-in bootstrap diode, HVICs, and multi-function LVIC. It also provides technical advantages such as the good thermal performances and reliability characteristic through the DBC substrate, over-temperature monitoring by built-in thermistor.

Page 15: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

Over Temperature Protection in Power Module for Hybrid and Electric Vehicle JeHwan Lee, HanGeun Jang, SangChul Shin, JungHong Joo, JinHwan Jung, Hyundai Motors, ROK In electric vehicle(EV), it is required that the junction temperature(Tj) does not exceed defined limit. Since the thermal model can estimate the Tj, EV is safely protected from overheating and be guaranteed its lifetime. However, the proposed thermal model is no longer valid in case of abnormal cooling state, so NTC temperature sensor inside of power module is additionally needed to keep the Tj within the limit. 1ED Compact – A new high Performance, Cost Efficient, High Voltage Gate Driver IC Family Heiko Rettinger, Infineon Technologies, D Introduction of the new Infineon EiceDRIVER™ family 1ED Compact and it's benefits for achieving higher power density in a continuously demanding market for cost efficient and compact solutions. Electromagnetic Robustness Validation for Gate Drivers Eckart Hoene, Stefan Junk, Fraunhofer IZM, D Drivers for high power semiconductors operate in an electromagnetically demanding environment. Nevertheless, up to now their robustness against current and voltage transients or electric and magnetic fields is rarely quantified. In this paper measurements of these parameters were carried out in a railway traction inverter. Based on the results measurement setups were developed and test levels defined that lead to a robustness qualification.

Cooling Application of Nucleate Boiling with Micro Structured Surfaces for Electronic Cooling Mike Zinecker, Matthias Hackert-Oschätzchen, Andreas Schubert, Chemnitz University of Technology, D; Martin Lausberg, cool tec Electronic, D; Andreas Schulz, Strukturtechnik UG, D Nominated for the Young Engineer Award A cooling technology based on a two-phase-change of a fluid is presented. With special micro structured surfaces, the boiling rate increases compared to smooth surfaces. Large amounts of heat, up to several kilowatts, can be removed, also with small surface areas. For the generation of appropriate micro structures, different manufacturing technologies are applied, demonstrated in the paper. The results of systematic experiments show the capability for cooling power and high-power devices. Void Reduction & Better Thermals with Engineered Flux-Coated Solder Preforms Karthik Vijay, Seth Homer, Indium Corporation, USA Manufacturing flux-coated preforms ensuring uniform consistent flux coverage across the solder surface and optimizing the flux chemistry are key to void minimization and better thermals in IGBT, RF & Microwave applications. Two-Phase Cooling of Hot-Swappable Modular Converters Thomas Gradinger, Francesco Agostini, Didier Cottet, ABB Switzerland, CH The cooling of modular converters presents different challenges. Two-phase cooling can be used to extend the performance of air cooling, while retaining its advantages in terms of electric insulation and easy plugability. An L-shaped thermosyphon can be optimally integrated in a power module, combining high power density and low pressure drop. On the converter level, it is shown how the cooling during hot-swapping can be handeled. The Challenge of Accurately Analyzing Thermal Resistances Nils Kerstin, Martin Schulz, Infineon Technologies, D In power electronic designs, estimation of chip temperatures is a mandatory step during the design phase. Developers have to rely on datasheet values regarding thermal resistances for this estimation. These values are well defined for solid materials; however the interface from power emiconductor to the heat sink depends on thermal grease and the mounting process. Measuring this part of the thermal path cannot be done directly. Several values need to be determined to calculate this value. Minor discrepancies during the measurements

Page 16: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

lead to massive deviations. This paper discusses the measurements to be done and the influence of inaccuracies. Analysis of Thermal Performances of a Power Module in PQFN Package vs. PCB Characteristics Stefano Ruzza, M. Palma, International Rectifier, I An experimental analysis of the thermal behavior of the µIPM module depending on PCB characteristics is reported. The goal is to realize a simple thermal model for the system based on experimental data and able to be provided indications for final applicative system board design. The module has been observed changing copper (area/thickness) around it and ambient characteristics. Trends curves for both module temperature and thermal resistance are provided and discussed Dual-sided Cooling of Power Semiconductor Modules Jacek Marcinkowski, International Rectifier, USA The paper presents the results of the analysis of thermal performance of new concept in high power semiconductor packaging technology intended for electric and hybrid-electric vehicle (EV and HEV) traction inverters. Evaluation of Phase Change Thermal Interface Materials for Power Modules Performance Enhancement Serge Bontemps, Anthony Basler, Matthieu Salland, Microsemi, F This paper evaluates several phase change thermal interface materials available in sheet form. A large Power resistor module is designed to feature homogeneous power dissipation over the full area of the module. Infrared camera measurement and liquid cooling are used for characterization of Rthcs thermal resistance of the variuos interface Keynote: Ultra High Voltage SiC Power Devices and its Impact on Future Power Delivery System Speaker: Alex Huang, FREEDM Systems Center, USA The Future Electric Energy Delivery and Management (FREEDM) System is a novel power delivery architecture suitable for plug-and-play of distributed renewable energy and distributed energy storage devices. Motivated by the success of the Information Internet, the architecture was put forward by the NSF FREEDM Systems Center as a possible roadmap for an automated and flexible electric power distribution system. In the Information Internet, people share information in a plug and play manner. In the envisioned ?Energy Internet?, a vision for sharing of the energy is proposed for ordinary citizen and home owners. Key technologies required to achieve such a vision are discussed. In this talk the author will provide an overview of the research conducted at the NSF funded FREEDM Systems Center. Among many of the key technologies, the development of ultra high voltage SiC power semiconductor devices and power electronics systems will be shown and their impact to future power delivery system such as the FREEDM System will be discussed. Power Converters The Modular Multilevel Converter as Universal High-Precision 3AC Voltage Source for Power Hardware-in-the-Loop Systems Johannes Kolb, Schaeffler Technologies - SHARE at KIT, D, Felix Kammerer, Alexander Schmitt, Mario Gommeringer, Michael Braun, KIT Karlsruhe Institute of Technology, D Three-phase voltage sources are power electronic systems, which generate specific, high-quality voltage waveforms. They are used in power hardware-in-the-loop (PHIL) systems for the emulation of electrical machines or grids. The proposed 3AC voltage source is realized by a Modular Multilevel Converter (MMC), which generates voltage waveforms with a low harmonics. Measurements are performed on a low voltage MMC prototype to evaluate the precision of the voltage waveforms. Class-E Amplifier with SiC-MOSFET switching at 2.5 MHz Karsten Hähre, Nicolai Hildebrandt, Rainer Kling, Wolfgang Heering, KIT Karlsruhe Institute of Technology, D

Page 17: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

This study demonstrates the capability of switching SiC-MOSFET at very high frequencies of up to 2.5 MHz in a Class-E power amplifier. Zero voltage (ZVS) and zero current switching (ZCS) contribute to achieving efficiencies greater than 90 %. The first prototype delivers an output power of up to 0.8 kW into a 50 Ohm load resistor without using the SiC-MOSFET to its full current capacity. High Power IGCT based Multilevel Inverter Jonas Wahlstroem, Drazen Dujic, Matthias Luescher, ABB Switzerland, CH Medium voltage drives are increasingly being used in high power and demanding industrial applications. A challenge for such equipment is that the applications require ever higher powers in combination with small footprints. The development of higher rated semiconductors, such as the IGCT can be considered ad one of the main enabler for fulfilling such requirements. Based on the high power IGCT a power extension from 9MVA to 12MVA of a 3300 V 3L-NPC based inverter has been realized. Predictive Deadbeat Power Control of PWM Rectifier Zhengxi Li, Yongchang Zhang, Shengwen Fan, Hu Zhang, North China University of Technology, CN Predictive power control (PPC) is emerging as a powerful alternative to conventional direct power control (DPC) due to its more accurate vector selection and flexibility in considering various constraints. However, similar to conventional DPC, applying only one voltage vector during one control period still presents relatively high power ripples and broad harmonic spectrum in PPC. To obtain satisfactory performance with PPC, very high sampling frequency is necessary, which increases the hardware burden. This paper proposes an proposed PPC by dividing the control period into two intervals, one for the active vector and another for a zero vector. The principle of deadbeat control of active power is introduced to determine the duration of the active vector. Experimental results prove that better steady performance is obtained in the proposed method while the dynamic response not affected.

New Frontiers of Power Electronics with GaN Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications David Reusch, Johan Strydom, Efficient Power Conversion (EPC) Corp, USA Nominated for the Young Engineer Award Gallium nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of silicon power MOSFETs. In this paper, we will discuss paralleling high speed GaN devices in applications requiring higher output current. This work will discuss the impact of in-circuit parasitics on performance and propose PCB layout methods to improve parallel performance of high speed GaN transistors. Lateral GaN Transistors – A Replacement for IGBTs in Automotive Applications Larry Spaziani, John Roberts, GaN Systems, CA IGBTs used in automotive applications can be replaced by GaN transistors. Higher performance can be achieved because GaN transistors can provide lower on resistance, higher operating temperatures and smaller systems. The performance of the GaN devices of GaN Systems and other producers are compared with the performance of IGBT devices. Ultra-Low Loss 600V – 1200V GaN Power Transistors for High-Efficiency Applications David Sheridan, D.Y. Lee, A. Ritenour, V. Bondarenko, J. Yang, C. Coleman, RFMD, USA A new generation of high voltage (600V - 1200V) GaN HEMTs are compared to the best in class existing technologies and are shown to maintain a significant advantage in switching performance. 99.3% Efficiency of Boost-up Converter for Totem-pole Bridgeless PFC using GaN Gate Injection Transistor Tatsuo Morita, Hiroyuki Handa, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda, Panasonic Corporation, J

Page 18: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

Nominated for the Best Paper Award We present highly efficient operation of a boost-up converter for bridgeless PFC using normally-off GaN Gate Injection Transistors in a novel totem-pole output circuitry. The normally-off device by a single chip enables its flip-chip assembly which effectively reduces the loop inductance in the circuit. The fabricated boost-up converter exhibits the peak efficiency of 99.3% and the maximum output power of 2kW is the highest ever reported for the efficient boost-up converter. Appliance Motor Drive Performance Improvements Using 600V GaN Cascode FETs Eric Persson, International Rectifier, USA This study compares the performance of Si FET, IGBT and GaN cascode based 3-phase motor drive inverters powering 200-400W PMAC motors over a variety of operating conditions including full load and light load, where compressors often spend most of their operating time. The measured losses due to switching and conduction are analyzed and compared along with dv/dt and conducted EMI spectra.

High Voltage Influence of Conduction Time on Switching Performance of High Voltage IGBT Modules Eugen Wiesner, Eugen Stumpf, Mitsubishi Electric Europe, D; Shinichi Iura, Hitoshi Uemura, Mitsubishi Electric Corporation, J The influence of IGBT and diode conduction time on switching behavior of Mitsubishi R-Series HVIGBT was analyzed in this paper. The experimental investigation was done with modules of different voltage classes. 1800A/3.3kV IGBT Module using Advanced Trench HiGT Structure and Module Design Optimization Takayuki Kushima, Katsunori azuma, Yasuhiro Nemoto, Yoshihiko Koike, Hitachi, J 1800A/3.3kV IGBT module with the highest current rating was developed. Advanced Trench HiGT structure was used to achieve low loss characteristics. In addition, module electrical and thermal characteristics were optimized to achieve low junction temperature and low parasitic inductance. The current ratings of new IGBT module can be increased by 20% from the conventional product type with these achievements. Resolving Design Trade-offs with the BIGT Concept Liutauras Storasta, Munaf Rahimo, Chiara Corvasce, Arnost Kopta, ABB Switzerland, CH The Bi-mode Insulated Gate Transistor BIGT is a single chip reverse conducting IGBT concept which is foreseen to replace the standard IGBT / Diode two chip approach in many applications. Therefore, it is necessary for to understand in detail the design challenges and performance trade-offs faced when optimizing the BIGT for different application requirements. In this paper, we present the main conflicting design trade-offs for achieving the overall electrical and thermal performance targets. We will demonstrate experimentally how on one hand, the BIGT provides improved design features which overcome the restrictions of the current state of the art IGBT/diode concepts, while on the other hand, a new set of tailoring parameters arise for an optimum BIGT behavior. 3.3kV RC-IGCTs Optimized for Multi-Level Topologies Umamaheswara Reddy Vemulapati, Martin Arnold, Munaf Rahimo, Thomas Stiasny, Jan Vobecky, ABB Switzerland, CH The Integrated Gate Commutated Thyristor (IGCT) is a high power semiconductor device with hard switching turn-off capability and thyristor-like conduction. Hence IGCTs can be optimized for lowest conduction losses. Therefore, in this paper, we demonstrate by simulation and experiment the feasibility of designing 3.3kV Reverse Conducting (RC)-IGCTs with very low conduction losses for multi-level topologies. Power Electronics in Automotive, Traction and Aerospace Design of an Active Battery Management System for Electric Vehicles Thomas Szalai, Ulf Schwalbe, Marco Schilling, Fabia Endert, Tobias Heidrich, Svetlozar Dimitrov Ivanov, Ilmenau University of Technology, D

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Nuremberg, Germany, 20 – 22 May 2014

The requirements for employing active balancing units in traction batteries to maximize the use and lifetime of the whole battery pack under real driving conditions are eximaned. After the power requirements are calculated a comparison between available active balancing methods determines which method is suitable. Finally, simulation results and experimental data from the prototype balancing unit are given. Configurable Modular Multilevel Converter (CMMC) for a Universal and Flexible Integrated Charging System Martel Tsirinomeny, Alfred Rufer, EPFL, CH Winner of the Best Paper Award Electric Vehicles owners are confronted by the limited compatibility of available charging infrastuctures. Therefore, this paper is focused on presenting a Configurable Modular Multilevel Converter (CMMC) for a universal and flexible integrated charging system. This concept is designed for a large range of charging infrastructure; from AC household basic supply to AC or DC ultrafast charging. On the Radiated Emissions of a Wireless Energy Transmission System for High Power Charging Applications Sven Thamm, ifak Magdeburg, D The Electromagnetic Compatibility of electrical devices becomes more and more important. The equipment has to comply with the limits of the EMC standards regarding conducted and radiated emissions. This work deals with the calculation of radiated emissions of a wireless power transmission system for electric vehicle charging applications. The WPTS consists of circular coils allowing a power transmission of 3 kW which is in the range for charging application regarding the electromobility. Modular Multilevel Parallel Converter (M2PC) for Electrically Driven Vehicles Florian Helling, Thomas Weyh, University of the Federal Armed Forces Munich, D; Michael Pfaeffl, Jonas Huber, Technical University of Munich, D; Stefan Götz, Duke University Durham, USA In this paper an implementation of the M2PC topology is presented. Compared to the M2C of R. Marquardt the new M2PC topology allows the connection of capacitors of nearby submodules not only serially but also parallel. The advantages of that additional interconnection, the resulting switching states of the SM?s and the implementation incl. test results of SM?s for a 55kW inverter will be presented. Furthermore the redundancy, scalability and reliability of the converter are described.

Energy Storage Low-Cost, Precision Battery Management System with Active Balancing up to ±10A Wenzel Maier, Graz University of Technology, A; Izabella Carneiro Bastos, Federal University of Alfenas, BR; Andreas Schmid, University of Leoben, A Advanced technology development of an electronic unit for monitoring and active balancing of large battery systems. By the new concept and its corresponding implementation, an accurate cell voltage measurement and therefore a condition-monitoring of each series-connected battery cells can be realized. The innovative design enables to charge or discharge each cell with an efficiency of about 80 %. The costs could be reduced to about 2,5 - 3,5 ? per cell. Lithium ion Batteries Balancing Daniel Chatroux, CEA-LITEN Centre d’Etues Nucleaires, F Standard aqueous batteries need no balancing electronic circuit. Balancing circuit is a specific need for lithium ion batteries. The first goal of this presentation is to compare the technologies differences between aqueous batteries and Lithium ion to explain the advantages and disadvantage about losses current in storage and balancing specifications. The second goal is to describe some passive and active, dissipative or not balancing circuits.

An Innovative Balancing Solution Used to Supply the 12V Auxiliary Network of an Electric Vehicle Laurent Garnier, CEA, F

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Nuremberg, Germany, 20 – 22 May 2014

In a Lithium Ion battery pack, it is necessary to balance the pack in order to guarantee that at the end of the charge, all cells are fully charged. This step is necessary, otherwise the available energy stored will decrease continuously charge after charge. There are traditional ways to achieve it: an active balancing dissipative method, or a non-dissipative balancing method (energy converters) with higher level of energy saving. Both ways work to compensate the dispersion of farad efficiency (balancing) but a non-dissipative solution can also compensate dispersion of capacity of the accumulators in series. There are other solutions, which could be named "smart balancing with direct energy use" solutions, because the energy involved in balancing is used instead of being transferred between accumulators. The goal of this presentation is to describe this innovative solution, to explain its main advantages and to show how it works. Optimal Supercapacitors and Batteries Combination as an On-board Energy Storage System in Railways Víctor López, José Luis Martin, Jon Andreu, Iñigo Kortabarria, University of the Basque Country, ES; David Ortega, Ingeteam Power Technology, ES On-board Energy Storage Systems (ESS) are a promising solution to reduce energy consumption in transportation systems. The combination of supercapacitors and batteries would increase the efficiency of the overall ESS and its operability and durability. Three topologies are analyzed and simulated against the current testing speed profiles for railways. The compromise between operability and other system limitations would define the topology selection for a new design.

SiC Devices Highly Efficient, and Compact ZVS Resonant Full Bridge Converter using 1200V SiC MOSFETs Jimmy Liu, KinLap Wong, Cree, HK; John Mookken, Cree, USA This paper proposes using the next generation (Gen2) of Silicon Carbide (SiC) devices in a Zero Voltage Switching (ZVS) converter application. A 1200V 160mohm SiC MOSFET from Cree Inc. is used to design a high frequency ZVS LLC resonant Full Bridge (FB) DC/DC converter. With the advantages of SiC MOS, the resonant converter can achieve high frequency, thus increase the power density with less component count and lower total cost. . 1200V 4H-SiC Trench Devices Ryota Nakamura, Yuki Nakano, Noriaki Kawamoto, Masatoshi Aketa, Kazuhide Ino, ROHM, J This paper presents the ROHM 1st generation, 1200V, 4H-SiC trench MOSFETs and 1200V 4H-SiC ultra-low forward voltage drop (VF) Schottky barrier diodes (SBDs) with trench structure. Firstly, SiC trench MOSFETs, of which mass production is in preparation, exhibits half the on-resistance (Ron) of the same size, 1200 V, ROHM SiC planar MOSFETs. Secondly, the developed SiC SBDs successfully showed about 0.3V lower VF than that of ROHM conventional 2G SBDs. Investigation of SiC Stack and Discrete Cascodes Anup Bhalla, Xueqing Li, Peter Alexandrov, John Hostetler, Leonid Fursin, United Silicon Carbide, USA This paper discusses, compares and contrasts the different configurations of SiC cascodes and will evaluate the switching performance, avalanche current withstanding capability, and short-circuit capability of stack and discrete cascodes by performing comprehensive experiments. Package and Thermal Aspects Investigation of Temperature Sensitive Electrical Parameters for Power Semiconductors (IGBT) in Real-time Applications Jimmy Alexander Butrón Ccoa, Gerhard Mitic, Siemens, D; Bastian Strauss, Andreas Lindemann, Otto-von-Guericke-University Magdeburg, D In this paper the methodology and analysis on temperature sensitive electrical parameters (TSEP) is presented and its use in online applications is discussed. The TSEP demonstrate an almost linear relation to temperature. This relation can be used for condition monitoring in power semiconductors (IGBT).

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Packaging Technology Platform for Next Generation High Power IGBT Modules Samuel Hartmann, Venkatesh Sivasubramaniam, David Guillon, David Hajas, Rolf Schütz, Dominik Trüssel, ABB Switzerland, CH An IGBT module design is presented that features large silicon active area for low on-state losses, good internal temperature distribution, high current conductor leads with well-designed electro-magnetic behaviour and highly reliable joining techniques. Simulation results as well as experimental results from prototypes are presented. Compact, Low Loss and High Reliable Next Generation Si IGBT Module with Advanced Structure Hori Motohito, Mai Saito, Yuichiro Hinata, Norihiro Nashida, Yoshinari Ikeda, Eiji Mochizuki, Fuji Electric, J Next generation Si IGBT power module with advanced structure was developed. This power module realizes the compact size that is about half compared to conventional structure power module with same rating, At the same time, reliability is also kept much higher than that of conventional module.

Power Electronics in Transmission Systems D-STATCOM: A Dynamic Local Reactive Power Reserve for Correction of System Voltage Problems Gianluca Postiglione, F. Pezet, NIDEC ASI, F; G. Borghetti, G. Torre, E. Gatti NIDEC ASI, I; O. Laurence, Vallourec, F In the recent years Power Quality issues have become more and more important. A cost-effective way to improve Power Quality is the D-STATCOM. The key functionalities of Nidec ASI D-STATCOM are: fast response time, negative sequence control, active damping and mitigation of grid voltage oscillations. Operational Tests for the MMC-Based VSC Valves Tianning Xu, Colin Davidson, Alstom Grid, UK One of the most important type tests required by IEC 62501, the Operational Test, is discussed for Modular Multi-level Converter (MMC)-based Voltage Sourced Converter (VSC) valves in this paper. The test methods for both the recommended preliminary tests and the type tests are discussed and the corresponding simulating and testing results are presented. By passing all the tests, Alstom has demonstrated a level of design capability on the MMC-VSC valve. Controlled Square Wave High Frequency Rectifier Ángel Luis Perez-Basante, Inigo Martínez de Alegría, José Ignacio Gárate, Iñigo Kortabarria, Jon Andreu, UPV/EHU, ES A new HVDC transmission system, CSWHFR, has been presented to reduce the cost of energy transmission from offshore wind farms to shore. This system allows the direct connection of wind turbines to a medium voltage DC distribution line. This new converter, which is composed by a six-pulse square IGBT inverter, a high frequency transformer and a thyristor rectifier, presents zero voltage switching at IGBT turn on, allowing to reduce the power loss. High Efficiency Converter Integrated DC Link Capacitor/Bus Enables a 20% Increase in Inverter Efficiency Edward Sawyer, Michael Brubaker, Terry Hosking, SBE, USA; Dayana El Hage, SBE, NL; T W Franke, Danfoss Silicon Solutions, DK Voltage overshoot at switch turn-off limits DC operation voltage for inverter systems. The SBE Power Ring Film CapacitorTM with integrated optimized bus structure can achieve DC link inductance below 10nH. This is less than typical IGBT half-bridge internal branch values and enables safe DC voltage increases up to 20%; improving inverter cost and volume efficiency with existing IGBT's without adding complexity. Improving Efficiency in AC drives: Comparison of Topologies and Device Technologies Klaus Vogel, Adalberto Jose Rossa, Infineon Technologies, D

Page 22: Short Descriptions Proceedings

Nuremberg, Germany, 20 – 22 May 2014

New standards for power losses measurement for variable speed drives are presented. The power losses of typical variable speed drives are analyzed and future alternatives to increase their efficiency investigated. Solutions with Silicon (Si) technology in Three-Level topology or Silicon Carbide (SiC) switches in Two-Level circuit are possibilities to increase the inverter efficiency. Recursive Dead Time Compensation Techniques for PV System Power Converters Mauro Di Monaco, Ciro Attaianese, Matilde D'Arpino, Giuseppe Tomasso, University of Cassino and Southern Lazio, I A recursive method, which compensates the VSI total distortion due to dead time effect, turn-on/off delays, switches and diodes saturation voltages is proposed in this paper. It is based on a steady state algorithm, which carries out step-by-step the voltage compensation on the basis of the comparison between reference and actual currents. For slow dynamic variation application, like PV systems, this method allows to achieve high performances with a very low computational requirements. Passive Inductors Performance Advantage of Enhanced Transformers with Integrated Current Doubler Thiemo Kleeb, Florian Fenske, Mehmet Kazanbas, Samuel Araújo, Peter Zacharias, University of Kassel, D The application of transformers with integrated current doubler is a good approach to reduce weight, size and losses of the magnetic components for push pull converters with current doubler rectifier. Improved designs using innovative core materials and geometries as well as cooling methods can lead to superior performance. E.g. especially automotive applications require high efficiency values at minimum size and weight. Engineering Illusion to Accurately Predict Power Losses in Magnetic Materials on the Base of Standard Manufacturer’s Datasheets Robert J. Pasterczyk, Schneider Electric, F; Timote Delaforge, Saint Martin d’Heres, F Nominated for the Best Paper Award The paper presents an overview of common engineering errors made on magnetic losses prediction and proposes modifications to be done for more accurate approach. An overview of existing correction had been carried out and new physical considerations regarding power conversion applications have been revealed in turn. Novel approach to achieve accurate losses prediction in magnetic components is finally proposed. Simulating Saturation Behavior of Inductive Components Jörn Schliewe, Stefan Schefler, Stefan Weber, EPCOS, D Different measurement techniques are suitable to characterize saturation behavior of inductive components. Differences in the results of more than fifty percent can be found. In this paper, we discuss the physics behind the effects and the corresponding methods for simulation. A new method and the established methods allow the simulation of the different magnetic material effects. The simulation methodologies are verified by an example switching-frequency filter-reactor.

Power Electronics in Automotive Ipt Station for Static and Dynamic Charging of Electric Vehicles Nikolay Madzharov, Anton Tonchev, Gabrovo Technical University of Technology, BG The present research report examines the key aspects in the design and implementation of contactless charging station for electric vehicles 30kW@7cm. Its main purpose is a representation an alternative method of charge. At the same time, provides an opportunity for quick charging of electric vehicle batteries. Modes of charge, which are part of functional properties of the system are both when stationary and during motion of electric vehicle. Comparison of Topologies for the Main Inverter of an Electric Vehicle Stephan Brüske, Robin Kuehne, Friedrich W. Fuchs, University of Kiel, D

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Nuremberg, Germany, 20 – 22 May 2014

In this paper a comparison of three different inverter topologies for the main inverter in an electric vehicle is given. The systems designed for a 20 kW synchronous machine are investigated theoretically and simulative and their performance will be evaluated and analysed for different power semiconductor technologies. Building a Continuous Source and Sink Solution for Battery Powered Device Testing Carlo Canziani, Ed Brorein, Neil Forcier, Agilent Technologies, I For testing the Power Management Units there is a need to simulate the charge and discharge of the batteries. For battery testing there is the need to source power to charge and sink power to discharge the batteries. In both of these test cases there is a need for a test solution that can source and sink power continuously and glitch free when crossing between positive and negative current or vice versa. We will look at three source and sink solutions and discuss their tradeoffs. A new Versatile Intelligent Power Module (IPM) for EV and HEV Applications Seiichiro Inokuchi, Marco Honsberg, Shoji Saito, Mitsubishi Electric Europe, D; Khalid Hussein, Shinji Hatae, Mitsubishi Electric Corporation, JP Motor drives and inverters for electric and hybrid electric vehicles are emerging markets and imply special requirements focussing on reliability, performance and functionality. Employing CSTBT chip and a more compact packaging technology a new IPM with itegrated DC/DC converter and further improved thermal cycling capability has been developed. Onboard Battery Chargers in Electric Cars: Benchmarking a Novel 5-level hybrid Converter with a Full SiC-based Approach Eduardo de Oliveira, Samuel Araujo, Benjamin Dombert, Peter Zacharias, University of Kassel, D High power battery chargers are considered as one of the potential solutions to address the present range limitation of electric cars. This paper will investigate two topologies of high power (22kW) onboard battery chargers, with the first one relying on an entirely novel 5-level rectifier operating with the bypass principle. In addition to this, a second prototype will be built fully relying on SiC devices and on a more basic topology. From the presented results, it will be possible to identify technical limits of the application, design trade-off issues and possible application challenges. Adaptable AC Input Phase Switching for Optimum Utilization of Various Grid Configurations supplying Power Electronic Converters and EV/HEV On Board Chargers Frank Schafmeister, Peter Ide, Jörg Richter, Delta Energy Systems, D Today's power electronic converters are mostly integrated in various products which are targeting at the worldwide market. This paper focuses on applications in the power range of 3...12kW, which are mainly fed by a 50/60Hz AC grid. It proposes a solution to selectively adapt to 1 phase- (e.g. North American) and 3 phase grids (e.g. European) using a flexible, i.e. switchable, input configuration. An advantageous implementation is presented which employs thyristors and therefore results in very limited additional component effort leading to almost no extra volume when compared to conventional AC front-end converters. The gained functionality allows AC front-end converters to fully utilize a given grid configuration without derating the transferred power. As a result a given product can use the same power electronic converter in various regions of our world, which reduces manufacturing and logistics efforts. A Soft-Switching Interleaved DC-DC Converter with Integrated Magnetics for High Voltage Battery Charger Rongyuan Li, Hugues Nijende, Frank Schafmeister, Pete Ide, Delta Energy Systems, D This paper describes a newly developed soft-switching DC-DC converter with wide output voltage operations for high voltage battery charger. The proposed converter is designed with zero-voltage-switching (ZVS) techniques and integrated magnetic component. The design details of the converter are discussed along with soft-switching characteristics and load transients through experimental waveforms.

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Electric Vehicle DC-Quick-Charger DC-Link Assessment Philip Dost, Abdoulkarim Bouabana, Constantinos Sourkounis, EneSys Ruhr University Bochum, D This paper presents the effects of DC-Quick-Chargers (DCQC) for Electric Vehicles (EVs) on the Battery while charging. This includes assessments of the efficiency at different power states as well as the assessments of harmonics (up to) high frequency behaviour in both voltage and current. The current gradients and the voltage limits of the DC-Charger are included as well as behaviour at grid faults. Vishay Dale WSBP8518 Intelligent Battery Sensor Christopher Lohmeier, Tom Veik, Vishay Dale Electronics, USA This paper will emphasize the Vishay Dale WSBP8518 Intelligent Battery Sensor. It will highlight the resistive sensor's purpose and performance, and explain its related automotive functions. The paper will demonstrate a real-world test of the WSBP and validate the product's accuracy through an in-lab test using information gained during the real-world test. The paper will also look at the device's non-automotive applications, its relevance in the renewable energy field, as well as compare the WSBP to other battery monitoring technologies. Comparison of Powertrain Concepts for Electric Vehicles Using Distributed Induction Motors Michael Schael, Philipp Spichartz, Constantinos Sourkounis, Ruhr-University Bochum, D The use of an electric vehicle powertrain with distributed motors and electric differential offers new design options and high dynamic behaviour of the vehicle. Two design concepts with two squirrel-cage and doubly-fed induction motors, respectively, are evaluated and compared. A qualitative validation is presented and conceptual differences in the energy flows within the powertrains are reviewed and simulated. Both concepts prove to be applicable in general. Speed synchronisation problems of the motors can be effectively reduced with the doubly-fed induction machine concept. Consideration on IGBT Module Lifetime for Electrical Vehicle (EV) Application Hui Han, Gaosheng Song, Mitsubishi Electric & Electronics, CN Considering the EV harsh application conditions on IGBT life, this paper makes an analysis of IGBT power cycling and thermal cycling ability, summarized that traditional industrial module has the potential risk of life expiration in electric vehicles. EV T-PM focuses on improving power cycling capability and thermal cycling ability, can completely satisfy the life requirement of electric vehicle. Converter Control Study on Fault-tolerant Electrical Drive, based on Transverse Flux Reluctance Motor and Improved Converter Topology Jacek Borecki, Bernd Orlik, University of Bremen, D; Matthias Joost, Friedrich-Wilhelm Bessel Institute Bremen, D The following publication explains the steps made for a fault-tolerant drive system design, based on transverse flux reluctance machine and new converter topologies suited to the motor. The proposed converter configurations are analyzed, and their advantages and disadvantages are briefly described. Practical Control Loop Design and Verification in Switched-mode Power Supply Applications Marco Schilling, Ulf Schwalbe, Tobias Reimann, Ilmenau University of Technology, D To get an optimized control loop design for power electronic converters, a systematic computer-aided design methodology is needed. This paper will present the development and verification efficient loop design process. Advanced Active Neutral Point Three Level Inverter with Standard Half-Bridge Modules Hans-Günter Eckel, Jan Fuhrmann,University of Rostock, D Three level inverters suffer from complex commutation circuits especially if built out of half-bridge modules and the high inductive load terminal is part of the commutation path. A new control scheme for an ANPC three level inverter is proposed, where one three level phase is built with three modules, by avoiding high inductive commutation circuits with voltage sources. The inverter control with space vector modulation was successfully

Page 25: Short Descriptions Proceedings

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implemented on a low power, low voltage test system. Digital Control Methods to Improve LLC Resonant Converter Light Load Mode Operation and Implement Synchronous Rectifier Gate Driver Chunyu Hou, Analog Devices, TW; Qingyi Huang, Renjian Xie, Analog Devices, CN This paper proposes a digital control method which uses the digital filter to implement burst mode for improving the soft-start state and light load mode operation of the LLC resonant converter. A digital control self-driven technique with SR current cross timing detection is also proposed to implement the secondary side synchronous rectifier (SR) gate drive control. Hybrid Control of 2- and 3-Level Converters Jens Onno Krah, Markus Höltgen, Cologne University of Applied Sciences, D Nominated for the Best Paper Award Current control is essential to ensure required performance of the power converter in the presence of uncertainties and to provide means for attenuating system disturbances especially for low inductance systems. This paper presents a new FPGA based approach to control inverters by utilizing space vector pulse width modulation and simultaneously by a supervising 3-phase hysteresis current controller for fast suppression of significant disturbances. A Theoretical and Experimental Analysis of N+1 and 2N+1 Phase-Shifted Carrier-Based PWM Strategies in Modular Multilevel Converters Xudan Liu, Andreas Lindemann, Hadi Amiri, Otto-von-Guericke University Magdeburg, D This paper presents a analysis of N+1 and 2N+1 phase-shifted PWM strategies in MMC. The reason why N+1 and 2N+1 voltage levels can be generated is explained, and the harmonics contents of two PWM strategies are analyzed and compared by analytical double Fourier analysis method. To verify the validity of above analysis, an inverter model was built in MATLAB. Moreover, a prototype is also under development so as to provide detail experimental results in final paper. Turnkey Solution for Single-phase Grid-connected DC/AC Converter Controls Christian Peter Dick, Sarah Gerngross, Cologne University of Applied Sciences, D As renewable energy becomes more important for today's energy supply, the demand for efficient and cost efficient inverters for photovoltaic applications keeps on increasing. It is essential for those inverters to be able to adapt to a wide range of loads at high power factor, to provide active and reactive power as well as synchronizing onto the grid smoothly. This paper introduces a set of control algorithms for both island and grid-tied mode for the DC/AC part of a two-stage inverter for photovoltaic systems. The control was implemented on a Field Programmable Gate Array (FPGA), featuring a PR-controller and a highly adaptive PLL based on a Second Order Generalized Integrator (SOGI). The paper also discusses ways to discretize said structures for further implementation. Modulation and Losses of Modular Multilevel Converters for HVDC Applications André Birkel, André Schön, Mark-M. Bakran, University of Bayreuth, D The advantage of a MMC is the, due to the high number of voltage levels, very low total harmonic distortion. Even a very high modulation frequency leads to only a moderate switching frequency per IGBT. However, this low switching frequency per submodule leads to an uneven loss distribution between the submodules. With an average of only six to eight switching events per AC period the distribution of losses within a submodule can lead to unbalanced temperatures and additional temperature cycles. Speed Estimation of DFIM by Using Frequency Analysis of Stator Current Volker Staudt, Jie Fang, Andreas Steimel, EneSys Ruhr University Bochum, D For speed identification schemes based on linear models of the machine various concepts are known. In case of doubly-fed induction machines (DFIM) challenges result from the slotting of stator as well as rotor, leading to harmonics of the respective currents at quasi-sinusoidal voltages. Including slotting and the resulting current harmonics into the model allows for speed identification based on these harmonics. Comparison of Stabilization Methods for V/f controlled Induction Motor Drive System

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Yaqiong Liu, Bernhard Piepenbreier, University of Erlangen-Nuremberg, D This paper investigates a study of different stabilization methods for open-loop controlled induction machine. Many approaches of stabilization are based on the same principle: the stator current derivative feedbacks to the stator voltage. In this paper, the feasible types of feedback are discussed and the optimal solution can be found by utilizing the roots loci study. The result of the analysis is proved with experiment. Development of a 5 kW Bidirectional Inductive Power Transfer System including Control Strategy for Electric Vehicles Marinus Petersen, Friedrich W. Fuchs, University of Kiel, D A 5 kW bidirectional Inductive Power Transfer (IPT) System for 400 VAC three phase input and 360 V output voltage is dimensioned with focus on efficiency. Different magnetic coupler designs are analysed. The electric parameters are determined which comprise compensation and power electronic topologies. A control strategy is developed. The functionality of the system is validated in the lab for different displacement scenarios and battery SOC levels. Impact of the Working Frequency on Wireless Power Transfer Systems Faical Turki, Ralf Wiengarten, Viktor Reising, Alexey Kratser, Vahle, D Depending on the wireless power transfer application, if it is a multi-load system with a high number of mobile power secondary circuits or a point-to-point transfer system with only one load and geometrically limited, the dependency on the working frequency may differ marginally. These effects are investigated and a methodology in optimizing such systems is elaborated and verified by simulation and hardware measurements. Converter Concepts for Increasing the Speed of Switched Reluctance Machines Felix Himmelstoss, Karl Edelmoser, Vienna University of Technology, AT The maximum speed of a switched reluctance machines (SMR) is limited by the time during which the rotor and the stator poles are overlapping and the inductance of the winding is constant. A negative voltage has to be applied across the winding for demagnetization. Two simple converter concepts for increasing the negative voltage during demagnetization are treated and analyzed. The drive can be combined with low voltage high current solar generators.

Power Quality Magnetic Emissions Reduction by Varying Secondary Side Capacitor for Ferrite Geometry based Series-Parallel Topology Wireless Power Transfer to Vehicles Erik Schaltz, Tushar Batra Aalborg University, DK Magnetic fields emitted by wireless power transfer system depends on the current (phase and magnitude) in the two coils and the space angle between them in steady state conditions. This paper discusses the reduction of the magnetic emissions by variation of the secondary capacitor (phase angle) for Series-Parallel topology wireless power transfer to vehicles. It is shown through the help of theory and simulations (Comsol) that it is possible to reduce the magnetic emissions and transmit the same power at unity power factor by having bigger capacitors on both sides. An Improved Series-Parallel Processing Applied to a Single-Phase Line-interactive UPS System for Low Power and Low Cost Applications Leonardo Poltronieri Sampaio, Sergio Oliveira da Silva, Vinicius Bacon, Rodrigo Modesto, Federal Technological University of Paraná, BR This paper presents a 1-phase UPS system, for low power and low cost applications. Two PWM converters are used to perform active series-parallel conditioning, as well as power processing reduction. In standby mode, an effective universal conditioning is carried out. A theoretical study involving the power rate handled by the series and parallel converters is developed. Validation results are presented in order to evaluate the UPS system performance.

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A novel Approach to Industrial Rectifier Systems: Dense, Efficient and Modular Architecture Enabled by Fixed-Ratio Bus Converters Maurizio Salato, Vicor Corporation, USA This paper proposes a new AC-DC system architecture based on fixed ratio bus converters. System functions are analyzed for the classic and the proposed approach; benefits, trade-offs and design methodology for the novel architecture are discussed. SiC Modular Multilevel Converters: Sub-Module Voltage Ripple Analysis and Efficiency Estimations Angel Luis Perez-Basante, University of the Basque Country, ES, Josep Pou, The University of New South Wales, AUS, Salvador Ceballos, Asier Gil de Muro, Ainhoa Pujana, Pedro Ibáñez, Tecnalia Research & Innovation, ES Two important technical challenges associated with the Modular Multilevel Converter (MMC) are the reduction of the voltage ripple of the Sub-Module (SM) capacitors and the reduction of the converter losses. This paper conducts a study focused on these two topics. Firstly the effect of a circulating current with a predefined second harmonic on the SM voltage ripple is assessed. Secondly an efficiency study for a MMC with Si and Silicon Carbide (SiC) devices is carried out. Results suggest that a SiC MMC converter with a circulating current including a second harmonic represent a good compromise between the reduction of the SM capacitors and a high efficiency. Identifying EMI Sources in Power Switch Commutation Cesare Bocchiola, International Rectifier, I; Andrea Gorgerino, Yannick Maurice, International Rectifier, USA Electromagnetic interference caused by the commutation of power switches is often not completely understood. In this paper, a mathematical model is introduced which allow to correlate the commutation parameters to the generated EMI spectra. The model is quite generic, in that it can be easily adapted to power mosfets and IGBT transistors. The effect of gate network and device's parameters is analised and some solutions are suggested to alleviate the EMI phenomena. Advanced Active dV/dt Filter for Inverter Powered Drives with Charge Pulse and Motor Sided Capacitance Patrick Münster, Hans-Günter Eckel, Johannes Hermann, University of Rostock, D Passively damped dV/dt filters are state of the art to reduce voltage overshoot at the end of long motor cables. The charge pulse technique can be used to eliminate the damping resistor and reduce the filter losses. In this paper, it is purposed to place the filter capacitances at the end of the motor cable. In this case, the cable behaves purely inductive, so it can be used instead of the filter chokes. The paper shows simulations and measurements with a fast switching inverter and long cables. A Novel Approach to Efficient Inrush Current Limitation for LED Power Applications Hendrik Tech, Dirk Leber, Systemtechnik LEBER, D; Andre Schwarzmeier, University of Erlangen-Nuremberg, D As an expert on electronics development and drive technology the company Systemtechnik LEBER presents a novel approach to efficient inrush current limitation for LED power applications. Besides functionality, fail-safety and energy efficiency features like the repetition rate of the protection function and a cost-effective implementation obtained high priority. In contrast to existing solutions this approach results in a far better cost-to-benefit-ratio. Optimal PWM Implementation for Dimming Control of LED Lamps Christian Branas, Francisco Azcondo, Rosario Casanueva, Francisco Diaz, University of Cantabria, ES This paper presents a comparative study of two solutions for implementing a pulse width modulation (PWM) dimming control for LED lamps. The study is based on a two-phase LCC resonant converter as lamp driver.The efficiency of the converter is used as the main figure of merit in order to evaluate each PWM implementation. Half Current Line Stress by LED Lamps Less 25 Watt Equipped With a Simple Nonlinear Passive PFC Reinhard Jaschke, Klaus F. Hoffmann, Helmut-Schmidt-University, D

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Since Sept. 1st, 2013 a new EU directive concerning energy labeling for LED lamps is given. In this context, the new energy efficiency classes up to A+ and A++ for lighting are introduced. However, the power factor of lamps less than 25 watt is undesired. The total RMS grid current of billions of LED lamps (e.g. 6 watt) is too high. By using a simple nonlinear passive topology for Power Factor Correction in combination with a flyback converter this RMS value can be significantly reduced nearly by factor two. By this, the power factor of ? = 0.45 is increased to ? = 0.90. The presented measurement results verify this theory. ACDC Converter with Switched Capacitor Applied to Power LEds Fernando Antunes, Pedro Miranda, Esio Santos, Edilson Mineiro, Federal University of Ceara, BR A switched capacitor-based converter to drive power LED in which the current pulse is provided by a switched capacitor is proposed. The driver uses a small inductor to improve the switching behavior of the converter. A 5 W, 24 V laboratory prototype has been implemented. Experimental results are provided to access the performance of the driver. Study of the Dependence between the Dissipated Power and the Inductance when a HV power MOSFET works in UIS Passive Mode Test Giuseppe Consentino, Yosef Damante, STMicroelectronics, I This paper studies the relationship between the power dissipated at the failure to the inductance, time and the drain current to avalanche when a HV power MOSFET is subjected to an Unclamped Inductive Switching (UIS) test. Converters Generation of Multiple Isolated Bias Rails for IGBT Inverters using Flyback/SEPIC/Cuk Combination Robert Zwicker, Analog Devices, USA This abstract describes tested methods for efficiently producing multiple proportional outputs in an isolated voltage domain using a single flyback transformer winding with two pins. The technique uses discrete or coupled inductors with diodes and coupling capacitors to combine flyback power conversion with output sections from SEPIC and Cuk converters. The load regulation is better than flyback alone. These techniques are particularly useful for bias rails used in IGBT based inverters. NZID (Near Zero Interlock Delay) driving principle Anja Zajc, Franci Zajc, Ivica Zajc Zdesar, Franc Zajc, Fraza d.o.o., SLO This paper will present how to fully take advantage of the power switch properties by a proper driving method - NZID driving principle - by achiving a stable interlock delay as short as 4 nsec. Power supply source for the continental shelf bottom exploration system Nikolay Volskiy, Yury Skorokhod, Sergey Volskiy, Nikolay Antushev, Transconverter, RUS Power supply source designed for the continental shelf bottom exploration system and its high voltage DC link (2700 V) primary features are presented here. The algorithm for selection of the optimal frequency is offered. Basic design equations which describe the cooling process of power IGBT are showed. Also the CASPOC simulation of the power circuits is described and simulation results are included. Pilot version of the power supply source designed and its test results are included. Quasi-Resonant Two-Switch Flyback Converter with Input Voltage Range Extension Circuit Hangseok Choi, Fairchild Semiconductor, USA This paper presents a quasi-resonant flyback converter with input voltage range extension circuit, which allows wider operating input voltage range while maintaining the near zero voltage switching (ZVS) of conventional two-switch quasi-resonant flyback converter. When applied to a two stage system with a PFC circuit in the front end, it also allows high efficiency over entire load and line range by fully utilizing the benefit of boost follower PFC. A Novel Method to Predict ZVS Behavior of LLC Converters Christian Oeder, Thomas Duerbaum, University of Erlangen-Nuremberg, D

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This paper focuses on a more accurate investigation of the resonant LLC converter’s ZVS behavior and proposes two approximation methods allowing a fast estimation of different converter designs. Combined Solid-State AC/DC Switch for Laboratory Applications Michael Kohlmann, Torsten Küper, Volker Staudt, Andreas Steimel, Ruhr University Bochum, D Appropriately designed solid-state AC and DC switches allow for the precise modification of load or feeding conditions in laboratory applications. In this way the reaction of a system or device under test to quickly changing conditions can be measured. This paper presents the concept and realization of such a solid-state AC/DC switch, which offers easy control by fiber-optic triggering. The switch is able to switch on and of AC as well as DC currents and voltages even in inductive circuits. Measurement results verify the functionality of the system. A Highly Reliable Point of Load, Low-Voltage DC/DC Converter for an FPGA Platform Masoumeh Amirpour, Lothar Czarnecki, Michael Patt, Technology Network Allgäu, D; Markus Polster, Fraunhofer IIS, D In FPGA applications low core voltages of 1 volt or below at high currents are increasingly getting important. This topic provides a guide for designing a highly reliable DC/DC converter of 1V, 15A.PCB layout consideration, 4 layers arrangement and proper grounding technique are based on a focus on reliability. Due to use of an enhanced operation controller there is possibility to minimize diode conduction losses related to the MOSFETs to absolute minimum dead-time,resulting in high efficiency. Indirect Current Source Inverter with Regenerative Snubber Circuit Johann Austermann, Christian Studen, Holger Borcherding, University of Applied Sciences Ostwestfalen-Lippe, D, Joachim Böcker, University of Paderborn, D In this presentation a high efficient circuit for feeding back regenerative power from frequency inverters into the grid is shown. The circuit essentially consists of a synchronous rectifier and a buck converter with an additional regenerative snubber circuit. Due to the regenerative snubber circuit a high switching frequency can be achieved without the disadvantage of high switching losses. The circuit can be connected between the DC link and the mains. A High Current, High Frequency Modular Multiphase Multilevel Converter for Power Hardware-in-the-Loop Emulation Alexander Schmitt, Mario Gommeringer, Johannes Kolb, Michael Braun, KIT Kalsruhe Institute of Technology, D The paper presents a Modular Multiphase Multilevel Converter especially for the usage in Power Hardware-in-the-Loop Emulation Systems. Standard half-bridges and inductive voltage dividers are used to generate the multilevel voltage waveform. A converter system was designed, which allows the generation of a six level voltage waveform with a PWM-frequency up to 100kHz. The prototype is controlled by a high-performance signal processing system and offers an output current of more than 100A. Voltage Balancing Control of a Three-Phase Hybrid-Clamped Five-Level Inverter Based on Optimal Switching Combination Xiaokun Wu, Yingyu Zeng, Kui Wang, Yongdong Li, Tsinghua University, CN In this paper, a newly released single phase hybrid-clamped five-level inverter is extended to three phases. To solve the capacitor voltage balancing problem of the three-phase inverter, an optimal switching combination control strategy is proposed. This strategy selects the redundant switching states base on optimal control. Performance of the three-phase inverter under various operating conditions, based on the proposed strategy, in the MATLAB/Simulink environment, is evaluated. Control of the Cascaded H-bridge Multilevel Matrix Converter Xiaokun Wu, Li Yao, Lie Xu, Yongdong, Li Tsinghua University, CN Cascaded H-bridge multilevel matrix converterhas the abilities of a wide controlablearea of input output voltage,multilevel operation and modular structure.The converter is suitable for great power application.This paper describes PWM generate method,analyzes the control area of the topology.The simulation result ispresented at last.

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An Overview on Converter Efficiency Increasing Techniques Oier Oñederra, Edorta Ibarra, Iñigo Kortabarria, Jon Andreu, Angel Luis Perez-Basante , University of the Basque Country, ES Obtaining a higher efficiency in DC-AC converters is one of the main goals of power electronics. Many techniques have been developed to do so, such as advanced modulation techniques, or soft-switching topologies. In this paper, efficiency increasing techniques are shown. Optimising Power Consumption of Embedded Systems Using Smart Power Supply Solutions Norbert Schönitz, Wilhelm Winterstein, Fraunhofer IIS, D; Bernhard Strzalkowski, Analog Devices, D SmartPM principle introduces state-dependent adjustable system supply. This method reduces power losses caused by numerous points of load converters, as their efficiency depend on the input voltage. Full load requires high supply voltages to ensure low power loss. In stand-by or at light load, the efficiency drops significantly. Smart power supply can control POL converters to work more efficiently by autonomously decreasing input voltage at light load . Analysis of Hybrid MOSFET/IGBT Switches Utilized in High Frequency Resonant Converters Jörn Bergmann, Klaus F. Hoffmann, Felix Bröcker, Helmut Schmidt University, D The objective of connecting a MOSFET and an IGBT in parallel is to combine the advantages of both semiconductor technologies. Such hybrid switches have been investigated in a high fre-quency test setup for resonant converters. These converters are commonly used in high voltage generators (e.g. for medical applications). In this paper three MOSFETs connected in parallel are replaced by a single hybrid switch. For this, a corresponding super-junction MOSFET has been combined with different IGBTs from several manufacturers. The performance of these hy-brid switches has been analyzed by efficiency measurements with in the test setup for different operating points. Design of a High Efficiency Planar Transformer with Deep Interleave Flat Coil Windings for >250W Converter Topologies Gerard Healy, Pulse Electronics, IE Basic planar windings structures are not optimum for converter topologies for higher power (>250W) application. Two advances will be presented to address this. Finite element analysis of the flux paths in traditional planar cores will be used to redesign for a more uniform distribution, increasing the effective core cross sectional area within a given geometry. Then, a novel winding technique can be implemented that will reduce the leakage inductance and increase the throughput power. Sensors, Diagnostics, Magnetics Ultra High Voltage High Current Probe for Power Device Testing Kazuki Negishi, Cascade Microtech, USA A new probe for on-wafer measurement of high voltage and high current devices. This new development allows dynamic measurements of both high voltage and high current bias conditions using the same probe in a single test cycle. This removed the need for multiple probing of the same pad, reducing test time, less pad damage and safer to operate. High Bandwidth Current Sensors for Electromobility Applications Rolf Slatter, Sensitec, D The precise, dynamic and low-loss measurement of electrical current is a basic, but decisive function in numerous power electronics devices for electromobility applications.The requirements in this field are different and partially more complex than for power electronics applications in the industrial field. The fast growing number of applications for driving electric motors and for battery management for electromobility lead to a demand for sensors for measuring currents in the range of several hundreds of amps, with high bandwidth, low hysteresis, compact dimensions and simultaneously high isolation strength. Over-Temperature Protection for IGBT Modules Ke Wang,Yongjun Liao, Xiankui Ma, Gaosheng Song, Mitsubishi Electric & Electronics, CN

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This paper will summarize the approaches and applications of temperature sensor for IGBT Modules.The calculation methods of the maximum junction temperature, the differences among Tjmax, Tjavg, TC and TNTC under different application conditions are introduced. This paper will also show how to design temperature sensor circuit and set over-temperature protection for Mitsubishi CM450DX-24S. Highly Dynamic Current Measurements with Inductive Current Sensors - a Numerical Recipe Stefan Hain, Mark-M. Bakran, University of Bayreuth, D This paper presents a current measurement method for measuring the current flow through a single semiconductor switch in a test setup with a high bandwidth and no additional stray inductance. It will focus on all numerical steps that should be done, including calibration, to reconstruct the original current waveform out of the measured induction voltage. VCC-Less RDSon Current Sensing Circuit Thomas Ribarich, International Rectifier, USA Typical switched-mode power converters today include circuitry for monitoring the power MOSFET current to protect the MOSFET against high peak currents that can damage components or saturate inductors. A low-ohmic resistor is typically placed in between the source of the MOSFET and ground for sensing the current. This paper describes a new circuit that instead uses the RDSon of the MOSFET itself to sense current. This allows for the traditional current-sensing resistor (or transformer) and associated power losses to be eliminated. Electric Vehicle DC-Quick-Charger Test Bed configuration Abdoulkarim Bouabana, Philip Dost, Constantinos Sourkounis, Ruhr-University Bochum, D This paper contains a concept for a test bed of DC-Quick-Chargers (DCQC). This test bed is a special build-on for DCQC to analyse the behavior of this kind of charger. It is possible to vary the output power by means of a controller. For this reason, it is an advantage to adjust different load ranges of up to 50kW. Online Insulation Condition Monitoring of AC Machines using Ultra-fast Inverter Switching Transition Based on New Semi-Conductor Materials Markus Vogelsberger, Bombardier Transportation, A; Hans Ertl, Clemes Zöller, Thomas M. Wolbank, P. Nussbaumer, H. Votzi, Vienna University of Technology, A In tractions drives, VSI-fed AC machines are preferred. However, the fast switching of the VSI (dv/dt) causes increased stress for the machine winding. Thus, insulation monitoring is important to ensure reliability. Model Based Design Tools in Closed Loop Motor Control Dara O'Sullivan, Analog Devices International, IE; Jens Sorensen, Analog Devices, USA; Anders Ferederiksen, Analog Devices, DK This paper outlines the process of Model Based Design (MBD), and provides an example of its implantation in a permanent magnet synchronous motor (PMSM) closed loop control application in a high performance variable speed drive. Experimental results for dynamic load and set point operation highlight the value, benefits and flexibility of the MBD methodology. Design and Simulation of High Power Filter Inductors with Minimized Thermal Resistance Alexander Stadler, Tobias Stolzke, Christof Gulden, STS, D In this paper, a new generation of power inductors is presented. The thermal management of these components has been optimized using FEM and extensive thermal measurements. Thus, much higher electrical current densities have become possible at the same hot-spot temperature, which is finally equivalent to higher energy density and smaller component size. Modeling of Softmagnetic Composites Michael Owzareck, Block transformatoren, D This paper compares two models, which describe the material behavior and the soft magnetic losses of soft magnetic composites. A measuring procedure with which the device under test can be also magnetized up to high flux densities at high frequency is introduced. Measurement results and calculation results are compared with each other.

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Size Reduction of a DC Link Choke Using Saturation Gap and Biasing with Permanent Magnets Andres Revilla Aguilar, Stig Munk-Nielsen, Aalborg University, DK; Marco Zuccherato, Danfoss, DK; Hans-Jørgen Thougaard, Sintex, DK This paper presents calculations, simulations and practical measurements on a DC line choke magnetically biased with the "saturation-gap" technique. The build prototype presents 50% smaller size is achieved compared to the standard EI core, while keeping the inductance and current requirements. Module Technologies II An APF Oriented Transfer Mold DIPIPM Utilizing MOSFET with Super Junction Structure Masahiro Kato, Tomofumi Tanaka, Masataka Shiramizu, Mitsubishi Electric, J This paper presents calculations, simulations and practical measurements on a DC line choke magnetically biased with the "saturation-gap" technique. The build prototype presents 50% smaller size is achieved compared to the standard EI core, while keeping the inductance and current requirements. Impact of Module Parasitics on the Performance of Fast-Switching Devices Christian Müller, Stefan Buschhorn, Infineon Technologies, D Nominated for the Young Engineer Award The interaction between the switching performance of fast-switching devices, e.g. a high-voltage power MOSFET, and module parasitics in the gate circuit or in the module layout is investigated. For this purpose, the effects and interactions of the parasitics with gate resistance, chip current, and temperature are explored by the help of a full-factorial approach. A model is derived for describing this interdependency, and critical parameter values are identified to safely utilize fast-switching devices. Furthermore, it is shown that a reduction of the switching losses up to 30 % is achieved by proper design of the parasitics in the gate-driver circuit. Potentials and Requirements of Silicon Carbide Hybrid Power Modules for Railway On Board Auxiliary Power Supplies Marc-André Ocklenburg, Martin Helsper, Andreas Gusek, Holger Siemer, Siemens, D SiC shows capabilties for the use in railway applications with challenging requirements. It provides system benefits caused by reduced losses, parameter independent characteristics and high operation temperature. The implementation of these benefits in commercial power modules by accounting several parameters is the challenge for making SiC usable for railway applications. This paper shows requirements for auxiliary power supplies and results of an evaluation with first SiC hybrid modules. Evaluation of Enhanced Power Modules with Planar Interconnection Technology for Aerospace Application Sebastian Liebig, Jürgen Engstler, Liebherr Elektronik, D; Kai Kriegel, Karl Weidner, Siemens AG, D The More Electrical Aircraft (MEA) applies electrical systems instead of conventional hydraulical systems. To reduce the weight of the required liquid cooling system, the liquid temperatures must be increased. Hence, the power modules must be designed for a higher temperature by reducing the thermal resistance. This can be achieved by the planar interconnection technology SiPLIT. Further advantages are a lower parasitic inductance, higher surge current capability and higher lifetime. Special Session “Designing Packages for Fast Switching” Integrated Packaging Allows for Improvement in Switching Characteristics of Silicon Carbide Devices Cyril Buttay, Khalil El Falahi, Rémi Robutel, Stanislavs Hascoet, Bruno Allard, Christian Martin, Laboratoire Ampere, CNRS, F, Mark Johnson, University of Nottingham, UK Specifically-designed packaging is a powerful way to make the most of the excellent existing SiC Devices. In this paper, we present three different packaging concepts (and their corresponding prototypes) that allow to overcome the limits of the classical power module packaging.

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SiC-JFET in Half-bridge Configuration – Parasitic Turn-on at Current Commutation Daniel Heer, Reinhold Bayerer, Daniel Domes, Infineon Technologies, D To fully utilize SiC-devices in fast switching applications, an all over low inductance design is absolutely required. This design criterion in combination with a special gate-drive concept reduces the effect of the parasitic turn-on. The SiC-JFET shows superior performance in terms of switching losses even with some parasitic turn-on. Further potential to reduce losses exists when parasitic turn-on totally prevented. Packages for Fast Switching HV GaN Power Devices Kirill Klein, Fraunhofer IZM, D This paper gives an overview of recently available packages and developments of HV GaN power devices. A compari-son with SiC and Si state of the art fast switching power devices shows the superior properties regarding fast switching potentials of HV GaN. Nevertheless, parasitic inductances of package and capacitances of transistors limit their fast switching capabilities. Therefore a Figure of Merit (FOM) for fast switching is developed, that provides a first overview on suitability for fast switching. Combining the switching parameters with parasitic parameters coming from the mod-ule design, derives a second FOM for a fast switching power module. Using these two FOM an engineer is able to choose the right semiconductor for particular application. The FOM show the favor switching properties of GaN devic-es compared to SiC and Si devices. A discussion of parasitic effects and theoretical limits in switching speed for wire bonded package explains the needs in package development to be able to utilize benefits of GaN power devices. Exem-plarily an advanced design of power module for fast switching HV GaN-HEMTs based on new packaging technologies is presented and its theoretical switching limits will be compared with wire bonded module.

DC/DC Converters I Leveraging Bus Converters in Regulated DC-DC Applications - Comparative Study of Yeaman Topology vs Factorized Power Architecture David Bourner, Maurizio Salato, Vicor Corporation, USA The paper addresses two different ways of facilitating power system design. The merits of these two architectures are described based on results obtained on a number of challenging applications through empirical testing. eGaN® FET based Wireless Energy Transfer Topology Performance Comparisons Michael de Rooij, Efficient Power Conversion, USA eGaN FETs are employed and compared in highly resonant wireless energy transfer where topologies, such as the current mode class D, class E, and a novel high efficiency voltage mode class D. The comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies will be experimentally tested based on using the same source and device coil set with the same rectifier. The experimental units will operate at 6.78 MHz and deliver up to 30 W. High Efficiency Parallel-parallel Interleaved LLC Resonant Converter for HV/LV Conversion in Electric/Hybrid Vehicles Gang Yang, Pierre Sardat, Patrick Dubus, Valeo, F; Daniel Sarcanac, Supelec, F Winner of the Young Engineer Award A hybrid/electric automobile targeted 2.5kW, 250kHz, HV/LV double phase parallel-parallel LLC resonant converter is presented. A double loop control strategy is proposed to share the current equally between the two power cells and to maintain a high efficiency among a wide power range. The total prototype performs 3kg, 2.5L, with a nominal efficiency higher than 94% and a power density 1W/cm3. Non-Isolated DC-DC Converters for High Power Applications - Control of the Capacitive Voltage Divider Philippe Barrade, Alfred Rufer EPFL, CH A non-isolated Dc-DC converter is presented, based on the current diverter peinciple. The converter is foreseen for large power electronic applications where the converters are fed from DC supplies at a typical

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level of around 1 to 2 kV. In some specific applications a primary voltage step-down stage would be needed allowing to aapt the voltage of the normal system to a higher DC supply. The paper describes the control strategy of Multistage Stacked Boost Artchitecture. New and Renewable Energy Systems A Three-phase Four-wire Grid-connected Photovoltaic System with Active Power Line Conditioning Leonardo Poltronieri Sampaio, Sergio Oliveira da Silva, Leonardo Campanhol, Federal Technological University of Paraná, BR This paper presents a PV system, which is connected to the 3-phase 4-wire utility grid by means of three full-bridge 1-phase converters. Simultaneously, with its capability for injecting active power into the grid, the PV system performs universal filtering. The algorithms used to obtain the current references are based on the SRF theory, which is implemented in conjunction with a proper MPPT technique. Simulation results are shown to validate the proposed control strategy. A Low Cost Photovoltaic Maximum Power Point Tracking Buck Converter for Remote Cell Phone Charging Applications Dan Rogers, James Green, Martin Foster, David Stone, Dan Schofield, Sami Abuzed, University of Sheffield, UK To utilise otherwise discarded components, this paper presents a Maximum Power Point Tracking Converter suitable for cell phone charging in remote areas of the developing world. Development of a Hybrid Power Generation System Hartmut Hinz, Benjamin Zuber, Frankfurt University of Applied Sciences, D Jonas Kilz, Süwag Erneuerbare Energien GmbH, D The objective of this paper is to describe the development of a hybrid system which consists of a combined heat and power plant and a photovoltaic array including a lithium-ion battery for electric energy storage. It is shown that the proposed design enables an independent and climate-friendly power supply of a residential neighborhood. Control of Converters for Micro Grid Applications - Challenges and Solutions Lutz Namyslo, Norbert Benesch, Siemens, D Diploma degree in electrical engineering from Dresden University. In 1999 he joined Siemens AG as a desing engineer for drives control software. In 2003 he took over responsibility as a Technical Project Manager in R&D for SINAMICS low voltage drives. From 2008 he managed projects dealing with converters for vessel on-board power generation and renewables. Since 2011 he is Head of Technology and Innovation within the Large Drive Products business segment.

Reliability A new HiPak Module Platform with Improved Reliability Gontran Pâques, Harald Beyer, Roman Ehrbar, Stefan Ellenbroek, Fabian Fischer, Sana Karadaghi, Sven Matthias, Emre Özkol, Dominik Trüssel, Raffael Schnell, Arnost Kopta, ABB Switzerland, CH In this paper, we present a new HiPak IGBT power module platform developed to improve the overall reliability performance when compared to the existing HiPak generation. A variety of novel processes and design platforms have been introduced in the new HiPak platform to achieve the targeted reliability levels which will be discussed in detail in the full article. Comparison Between Active and Passive Thermal Cycling Stress with Respect to Substrate Solder Reliability in IGBT Modules with Cu Baseplates Marc Schäfer, O. Schilling,C. Yue,T. Kashko, Infineon Technologies, D

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The reliability of the solder joint between substrate and base plate of an IGBT module can be tested using passive thermal cycling (TC) or active power cycling (PC). This paper focusses on a common understanding of the most relevant stress parameters that dominate the solder aging in both types of tests. Reliable & Fault-Tolerant DC/DC-Converter Structures Michael Gleißner, Mark-M. Bakran, University of Bayreuth, D Concerning reliability, fault-tolerance and modularity of DC/DC-converters, a multilevel module is compared to a standard module with protection switches. The reliability analysis includes a comparison of different standards for failure rate calculation of power electronic components. Besides a smaller inductor, the multilevel module offers a safer short-circuit disconnection and enhanced operability after a short-circuit fault. Simultaneous Online Estimation of Junction Temperature and Current of IGBTs Using Emitter-auxiliary Emitter Parasitic Inductance Vinoth Kumar Sundaramoorthy, Enea Bianda, Richard Bloch, Franz Zurfluh, ABB Switzerland, CH Winner of the Young Engineer Award A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on the voltage drop (VEE`) across the parasitic inductor that exists between the main emitter (E) and auxiliary emitter (E`) terminals. The peak amplitude of the voltage drop (VEE`) was found to depend on the junction temperature at a known current and DC link voltage. Also, the collector current can be estimated simultaneously, by integrating VEE without the use of any additional sensors. Measurement circuits were implemented to estimate Tj and the current, and their results are discussed. SiC Systems Compact 100A/1200V SiC Power Module for Industrial Applications Using DioMOS (Diode in MOSFET) Devices Keisuke Watanabe, Norimitsu Hozumi, Yasuhiro Kaizaki, Hideki Nakata, Takashi Harada, Ryosuke Usui, Kazuyuki Sawada, Tetsuzo Ueda, Eiji Fujii, Panasonic Corporation, J, Hironori Hiraoka, Hir This paper describes a compact SiC power module for a half bridge circuit free from external fly-wheeling diodes. The SiC MOSFET called as DioMOS also works as a reverse diode by utilizing an n-type epitaxial channel under the MOS gate for the reverse conduction path of the diode. Note that the size of the module can be reduced by half in the footprint, which is very promising for various industrial applications. The rating current and blocking voltage are 100A and 1200V respectively. Increasing the Efficiency of a Single Phase Z-Source Inverter by utilizing SiC – MOSFETS Manuel Steinbring, Mario Pacas, University of Siegen, D Earlier implementations of a single phase Z-Source that were examined in a set-up have shown a satisfactory behavior with good dynamic properties. The major disadvantage was the resulting low efficiency of the whole system. In this paper it is shown that the efficiency of the ZSI can be enhanced by replacing the standard Si-IGBTs by new SiC MOSFETS. The switching losses in the semiconductors can be significantly reduced. The total losses decrease up to 65%. Power Losses Estimation in SiC Power BJTs Cheng Chen, Denis Labrousse, Stéphane Lefebvre, SATIE, F; Cyril Buttay, Hervé Morel, Ampère, F; Villebon Sur Yvette, F; Julien Andre, Fairchild Semiconductor, France; Martin Domeij, Fairchild Semiconductor AB, SE In this paper, power loss of Fairchild SiC power BJTs is analyzed in order to develop high-frequency switching converts. Switching and conduction losses are estimated by two comparative methods of measurement of losses. Furthermore, this paper focuses on the influence of high junction temperature on power losses of SiC BJTs. The switching results presented here offer interest of BJTs in high current, high frequency and high temperature operations.

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DC/DC Converters II Novel Improved Loss Prediction for Multi-Resonant Converter Optimization Based on the First-Harmonic-Approximation Christian Oeder, Jens Goettle, Thomas Duerbaum, University of Erlangen-Nuremberg, D The first harmonic approximation (FHA) is a widely used technique to analyze resonant converter topologies. The proposed improvement has been developed to provide a tremendous gain in accuracy while preserving the FHA's simplicity and a low computational effort. The gain in accuracy is based on a more realistic current waveform, which in turn provides a more accurate converter optimization. Detailed Analysis and Optimization of the Asymmetrical Half-Bridge PWM Converter including Parasitics Jens Goettle, Tobias Hieke, Thomas Duerbaum, University of Erlangen-Nuremberg, D The paper presents a detailed analysis of the asymmetrical half-bridge PWM converter. Due to its advantages in regard to efficiency, power density and costs the topology gains increasing attention. The paper identifies the most important converter parameters and reveals their primary influence and impact on efficiency. At last an optimization strategy based on the gained insights is proposed. Soft Switching Flyback Topology by Using the Energy Contained in Parasitic Elements Bruce Carsten, Bruce Carsten Associates; Ionel Jitaru, Rompower Energy Systems, USA The paper will present a novel Soft Switching Flyback Topology which utilizes the energy contained in the parasitic resonant circuit formed by the capacitance across the primary power switch and magnetiziong inductance to create soft commutation for the primary power switch. The energy conained in the parasitic resonant circuit creates ringing across the primary power switch during the dead time. This energy is typically dissipated or dampened durring the deat time period into core losses. The ringing across the primary power switch durring the dead time period can disturb the control IC that drives the synchronous rectifier in the secondary leading to accidental turn on which impact the efficiency and the reliability of the converter. The proposed technology eliminates this ringing by ?freezing? the energy contained in the parasitic resonant circuit and uses that energy to create soft switching condition for the primary power switch. High Efficiency Converters II Designing a Low Weight Low Loss Auxiliary Converter for Railway Application Andreas März, Mark-M. Bakran, University of Bayreuth, D In this paper a comparison of different hard- and softswitching DC-DC converter topologies for the use in an auxiliary power supply is being made with regard to weight reduction and semiconductor cost. For the semiconductors standard Silicon IGBT´s are compared to SiC MOSFET´s on the basis of the needed chip area or the rated module current. PFC Single Conversion Line Ripple Cancellation Using the Yeaman Topology Harry Vig, David Bourner, Vicor Corporation, USA This paper introduces a new application of the previously introduced ?Yeaman Topology?. The advantage for PFC converters is the ability to efficiently regulate the line ripple on the output bus by over two orders of magnitude without needing to reprocess 100% of the energy coming from the previous conversion stage. The result is in an increase of power density, efficiency, and lower cost than a traditional post processing stage. Cost Benefits on High Frequency Converter System Based on SiC MOSFET Approach Luigi Abbatelli, Michele Macauda, Giuseppe Catalisano, STMicroelectronics, I Daniel Kohout, Albert Boscarato, STMicroelectronics, CZ Wide band-gap semiconductors (WBG) have recently drawn a lot of interest as main switches for power conversion processes. Owing to their inherent properties, materials such as Silicon Carbide (SiC) offer some advantages over silicon in the 1200V voltage range representing a solution to the quest for increased power density, safer thermal operation, better efficiency, reduced system form factor as well as a significant reduction of the size and cost of passive components . In this paper we?ll show how the SiC MOSFET can help to

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maximize the overall performance of an high frequency converter by lowering the overall system cost. The most relevant aspect of this work consists in exploiting the SiC MOSFET capability to work at high frequency through its extremely low switching losses, therefore, the possibility to reduce size, weight and cost of the system with a special focus also to the logistic cost. Saving Money: SiC in UPS Applications Stefan Buschhorn, Klaus Vogel, Infineon Technologies, D Efficiency is known as the main lever for cost saving in UPS systems. Based on semiconductor power loss measurements and subsequent calculations, the losses and efficiency for a typical application are compared for Si-IGBT and SiC solutions using various topologies. The resulting costs for investment and operation are estimated for a typical 250kVA UPS system with both chip technologies. A comparison clearly shows the savings for SiC solution