SMM5085V1B - 住友電工デバイス・イノベーション 3.0 July. 2017 3 Ku-Band Power Amplifier MMIC SMM5085V1B 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 16 18 20

Edition 3.0

July. 20171

Ku-Band Power Amplifier MMIC

SMM5085V1B

FEATURES

・High Output Power: Pout=33.0dBm (typ.)

・Linear Gain: GL=25.0dB (typ.)

・Frequency Band: 12.7 to 15.4GHz

・Impedance Matched Zin/Zout=50ohm

・Integrated Power Detector

・Small Hermetic Metal-Ceramic SMT Package(V1B)

DESCRIPTION

The SMM5085V1B is a MMIC amplifier that contains a three-

stages amplifier, internally matched, for standard communications

band in the 12.7 to 15.4GHz frequency range.

Sumitomo Electric’s stringent Quality Assurance Program assures

the highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING

Item Symbol Rating Unit

Drain-Source Voltage VDD 10 V

Gate-Source Voltage VGG -3 V

Input Power Pin +23 dBm

Storage Temperature Tstg -55 to +125 deg.C

RECOMMENDED OPERATING CONDITIONS

Item Symbol Recommend Unit

Drain-Source Voltage VDD Up to +6 V

Input Power Pin Up to +16 dBm

Operating Case Temperature Tc -40 to +85 deg.C

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)

Item Symbol Test Conditions Limits Unit

Min. Typ. Max.

RF Frequency Range f VDD=6.0V 12.7 - 15.4 GHz

Gate Bias Voltage VGG IDD(DC)=1200mA typ. -0.50 -0.1 -0.04 V

Output Power at Pin=13dBm POUT 31.5 33.0 - dBm

Output Power at 1dB G.C.P. P1dB VGG-constant - 32.5 - dBm

Power Gain at 1dB G.C.P. G1dB ZS=ZL=50ohm 20 24 - dB

Power-added Efficiency at 1dB G.C.P. PAE - 20 - %

Third Order Intermodulation Distortion *1 IM3 *1:Df=+10MHz -38 -44 - dBc

Drain Current at 1dB G.C.P. IDDRF Pout=20dBm (S.C.L.) - 1500 1800 mA

Input Return Loss (at Pin=-20dBm) RLIN - 8 - dB

Output Return Loss (at Pin=-20dBm) RLOUT - 8 - dB

G.C.P. :Gain Compression Point, S.C.L. :Single Carrier Level

ESD Class 0B up to 250V

Note : Based on JEDEC JESD22-A114-C (C=100pF, R=1.5kohm)

CASE STYLE V1B

RoHS COMLIANCE YES

Ordering Information

Part Number Order Unit Packing

SMM5085V1B No Limitation 48pcs. / Tray x4 Trays = 192pcs. / Packing

SMM5085V1BT 500pcs. 500pcs. / Reel x1 Reel = 500pcs. / Packing

Edition 3.0

July. 20172


SMM5085V1B

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Output Power (dBm) (S.C.L.)

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Input Power (dBm)

12.7GHz 13.5GHz 14.5GHz 15.4GHz

Output Power, Drain Current vs. Input Power

VDD=6V, IDD(DC)=1200mA

Output Power vs. Frequency


IMD Performance vs. Output Power


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Pin=4dBm 0dBm 4dBm

8dBm 13dBm P1dB

IM3

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IDD

Pout

Edition 3.0

July. 20173


SMM5085V1B

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Input Power (dBm)


Output Power, Drain Current vs. Input Power by Drain Voltage

IDD(DC)=1200mA, Freq.=13.5GHzIDD(DC)=1200mA, Freq.=12.7GHz

IDD(DC)=1200mA, Freq.=15.4GHzIDD(DC)=1200mA, Freq.=14.5GHz

IDD

Pout

IDD

Pout

IDD

Pout

IDD

Pout

Edition 3.0

July. 20174


SMM5085V1B

Output Power, Drain Current vs. Input Power by Drain Current

VDD=6V, Freq.=12.7GHz VDD=6V, Freq.=13.5GHz

VDD=6V, Freq.=14.5GHz VDD=6V, Freq.=15.4GHz

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Input Power (dBm)

IDD=800mA IDD=1000mA


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IDD

Pout

IDD

Pout

IDD

Pout

IDD

Pout

Edition 3.0

July. 20175


SMM5085V1B

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Inter-modulation Distortion vs. Output Power by Drain Voltage

IDD(DC)=1200mA, Freq.=12.7GHz IDD(DC)=1200mA, Freq.=13.5GHz

IDD(DC)=1200mA, Freq.=14.5GHz IDD(DC)=1200mA, Freq.=15.4GHz

IM3

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IM5

IM3

IM5

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Edition 3.0

July. 20176


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Inter-modulation Distortion vs. Output Power by Drain Current

VDD=6V, Freq.=13.5GHzVDD=6V, Freq.=12.7GHz

VDD=6V, Freq.=15.4GHzVDD=6V, Freq.=14.5GHz

IM3

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IM3

IM5

IM3

IM5

IM3

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Edition 3.0

July. 20177


SMM5085V1B

Output Power, Drain Current vs. Input Power by Case Temperature

VDD=6V,IDD(DC)=1200mA(at Tc=25deg.C) , Freq.=12.7GHz VDD=6V,IDD(DC)=1200mA(at Tc=25deg.C) , Freq.=13.5GHz


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Input Power (dBm)

-40deg.C +25deg.C +85deg.C

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Input Power (dBm)


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IDD

Pout

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Pout

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Pout

IDD

Pout

Edition 3.0

July. 20178


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Inter-modulation Distortion vs. Input Power by Case Temperature



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Edition 3.0

July. 20179


SMM5085V1B

Power Detector vs. Output Power vs. frequency

VDD/IDD(DC)=6V/1200mA, Vdet.Bias=Vref.Bias=5V, Tc=25deg.C

-1.2

-1

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-0.6

-0.4

-0.2

0

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0.6

0.8

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Vre

f(V

), V

det

(V

)

Pout (dBm)

Vref, Vdet

12.7GHz 13.5GHz 14.5GHz 15.4GHz

Vref

Vdet

0.001

0.01

0.1

1

10

-10 -5 0 5 10 15 20 25 30 35

Vre

f-V

det

(V

)

Pout (dBm)

Vref- Vdet

12.7GHz 13.5GHz 14.5GHz 15.4GHz

Output Power(dBm)

Output Power(dBm)

Edition 3.0

July. 201710


SMM5085V1B

Power Detector vs. Output Power vs. Case Temperature

VDD/IDD(DC)=6V/1200mA, Vdet.Bias=Vref.Bias=5V (at Tc=25deg.C)

0.001

0.01

0.1

1

10

-10 -5 0 5 10 15 20 25 30 35

Vre

f-V

de

t (V

)

Pout (dBm)

12.7GHz

-40deg.C 25deg.C 85deg.C

0.001

0.01

0.1

1

10

-10 -5 0 5 10 15 20 25 30 35

Vre

f-V

det

(V

)

Pout (dBm)

13.5GHz


0.001

0.01

0.1

1

10

-10 -5 0 5 10 15 20 25 30 35

Vre

f-V

det

(V

)

Pout (dBm)

14.5GHz


0.001

0.01

0.1

1

10

-10 -5 0 5 10 15 20 25 30 35

Vre

f-V

det

(V

)

Pout (dBm)

15.4GHz


Output Power(dBm) Output Power(dBm)

Output Power(dBm) Output Power(dBm)

Edition 3.0

July. 201711


SMM5085V1B

S-PARAMETERS

@VDD=6V, IDD=750mA

@VDD=6V, IDD=750mA

-40

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-10

0

10

20

30

40

0 5 10 15 20 25 30

Sxx

(dB

)

Frequency (GHz)

VDD/IDD(DC)=6V/1200mA

S11 S21 S22

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20

30

40

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Sxx

(dB

)

Frequency (GHz)


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Edition 3.0

July. 201712


SMM5085V1B

1.0E+01

1.0E+02

1.0E+03

1.0E+04

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

1.0E+10

1.0E+11

1.0E+12

50 100 150 200 250

Tch (deg-C)

MTT

F (

hrs

.)

Ea=1.56eV

DTch vs. Drain Voltage

(Reference)

IDD=1200mA

Note: DTch : Temperature Rise from Backside of the Package to Channel.

Tch (deg.C)

10

15

20

25

30

35

40

45

50

3 4 5 6 7

DT

ch

(d

eg

.C)

VDD (V)

IDD(DC)=1200mA

VDD(V)

Edition 3.0

July. 201713


SMM5085V1B

Package Outline and Pin Assignment

PIN Assignment

VGG : 1, 3

VDD : 5, 6, 7, 14, 15

RF IN : 2

RF OUT : 10

Vref : 11

Vdet : 13

GND : 4, 8, 12, 16

N.C. : 9

Edition 3.0

July. 201714


SMM5085V1B

PCB Pads and Solder-resist Pattern

Unit : mm

Edition 3.0

July. 201715


SMM5085V1B

1uF

VDD3VDD2

1uF

Block Diagram

VDD3

1uF

VGG

RF IN RF OUT

1uF

VDD2

1uF

VGG

50851

2

3

4 5 6 7 8

11

10

9

16 15 14 13 12

1uF

VDD1

1uF

PIN Assignment

VGG : 1, 3

VDD : 5, 6, 7, 14, 15

RF IN : 2

RF OUT : 10

Vref : 11

Vdet : 13

GND : 4, 8, 12, 16

N.C. : 9

1

2

3

5 6 7

10

131415

SMM5085V1B

Recommended Bias Network

NOTE:

1. The capacitors are recommended on each bias supply lines, close to the package,

in order to prevent video oscillations which could damage the module.

2. Two pins named VGG are internally connected.

3. The same pins named VDD are also internally connected.

11

Vref

Vdet

56kohm

56kohm

Vref-Vdet

+5V

+5V

Vdet.Bias

Vref.Bias

○

Edition 3.0

July. 201716


SMM5085V1B

5085

■ Marking Information

Index

Manufacture identification

Index of the 5th digit

Part Number

S.No. (0001 to 9999)

Year code

Month code

<Year code>

Code T U V W X Y Z A B

Year 2011 2012 2013 2014 2015 2016 2017 2018 2019

<Month code>

Code H M N P R S T U W X Y Z

Month 1 2 3 4 5 6 7 8 9 10 11 12

Edition 3.0

July. 201717


SMM5085V1B

■ 4-inch Tray Packing (Part No. : SMM5085V1B)

Edition 3.0

July. 201718


SMM5085V1B

■ Tape and Reel Packing (Part No. : SMM5085V1BT)

Edition 3.0

July. 201719


SMM5085V1B

Mounting Method of SMD(Surface Mount Devices) for Lead-free solder

Mounting Condition

(1) For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used.

(*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5%

copper.)

(2) A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low

halogen content is recommended.

(3) When soldering, use one of the following time / temperature methods for acceptable solder joints.

Make sure the devices have been properly prepared with flux prior soldering.

* Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow):

Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process.

Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The

recommended reflow temperature profile is shown below. The temperature of the reflow profile must

be measured at the device body surface.

Reflow temperature profile and condition:

(1) Preheating: 150 to 200 deg.C, 60 to 120 seconds(2) Ramp-up Rate: 3 deg.C /seconds max(3) Liquidous temperature and time: 217 deg.C, 60 to 150 seconds(4) Peak Temperature: 260 deg.C(5) Time Peak Temperature within 5 deg.C: under 30seconds(6) Ramp-down Rate: 6 deg.C /seconds max(7) Time RT to peak temperature: 8 minutes max

* Measurement point: Center of the package body surface

(4) The above-recommended conditions were confirmed using the manufacture’s equipment and

materials. However, when soldering these products, the soldering condition should be verified by

customer using their equipment and materials.

200

217

(5)

(2)260255

RT

(1) (3)

150

Temperature(deg.C)

(6)

(7)

Edition 3.0

July. 201720


SMM5085V1B

CAUTION

This product contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For

safety, observe the following procedures:

・Do not put these products into the mouth.

・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as

these by-products are dangerous to the human body if inhaled, ingested, or swallowed.

・Observe government laws and company regulations when discarding this product. This product must be discarded in

accordance with methods specified by applicable hazardous waste procedures.

Documents

SMM5085V1B - 住友電工デバイス・イノベーション 3.0 July. 2017 3 Ku-Band Power Amplifier MMIC SMM5085V1B 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 16 18 20