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The Coherent FinFETProf. Carlo Requião da Cunha, Ph.D.
Chip in Rio Sep / 07
Laboratório de Circuitos Integrados UFSC
Núcleo Interdisciplinar de Microeletrônica
Ballistic TransportBallistic Transport
L < LL < Lmm (Momentum Relaxation Length) = (Momentum Relaxation Length) = .L.Lcc
Ballistic Transport
L
Lm
Diffusive Transport
*
2
m
ne = ?
Coherent TransportCoherent Transport
L < LL < L (Phase Relaxation Length) = (Phase Relaxation Length) = .L.Lcc
L
LL
Phase randomizing agents: e- - e-, e- - ph
A Model Device: Fin StructureA Model Device: Fin Structure
qEmwidth
fde2
22
636
1073.417.1
24
T
TEg
3
2ln
4
3
2Cde
dhBGF
Mm
mTkEEJ
Simulation StrategySimulation Strategy
Poisson Schrödinger
potential
density
0,,,2
2
yxEyxVyx
mde yxyx ,,
structure current
JUST MATH
Green’s FunctionsGreen’s Functions
011
102
01111 GGIG
VVG 022
02
1102221 GVGG
AN
RNNN GGTrT 1111
dEErrGrk
nk ;;
2
1
dEGGh
qI nout
drainpin
draindrain 2
Huge Discussion!Huge Discussion!
IIDD V VDS DS CharacteristicCharacteristic
Gating ActionGating Action
~73 A/V
Negative Gate BiasNegative Gate Bias
QuantizationQuantization
ConclusionsConclusions
• The coherent FinFET still retains some of the main properties of the classical MOS depletion transistor;
• Intrinsic quantum behavior makes the drain current marginally sensitive to gate action;
• Output resistance is highly reduced;
• The transistor shows a quantum transition for negative gate voltages that might lead to the design of new devices.