XXPS XPS
3 1350 cm-1D1600 cm-1G
2680 cm-12DG' HOPG G2D 2DG HOPG2D
A p
p lic
a tio
n N
o te
M 1
2 0
0 5

XXPS 10 nm XPSXPS X XPS
2X K-Alpha

XPS 5HOPGC1s
285 eVHOPGsp2 sp3 290 eVπ→π C1s XPS sp2sp3
2




298
HOPG


Binding EnergyeV
1586 cm-1
Raman shift cm-1 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200
XPS XPS
6XPS
XPS XPS
8
GD XPS C1s9 XPS C-O C-C sp2 C=O
C-O
3
d : IX :Xθ λX,Y : YX


13471600
298 296 294 292 290 288 286 284 282 280
Binding EnergyeV
221-0022 3 -9 C2F 532-0011 6 -3 -14 DNX
E-mail : analyze.jp@thermofi sher.com
2012 Thermo Fisher Scientifi c Inc. All rights reserved. •Thermo Fisher Scientific • • •
XPS 10 Ar 10 SiO2C1s 101 nm 1C1s 9 C-OC1ssp2 GD XPS
XPS XPS
1. Thermo Scientifi c Application Note M10002
2. S. Turgeon, R.W. Paynter Thin Solid Films 3942001 4448
10XPS

C o
un ts

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60
70
50
40
30
20
10
0 298 296 294 292 290 288 286 284 280282
A to
m ic
p er
ce nt
C1sXPS1nm