This is information on a product in full production.
July 2013 DocID15764 Rev 7 1/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications• Switching applications
DescriptionThese devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
12
3
1
2
3
TO-220 IPAK
TO-220FP1
2
3
3
2
1
DPAK1
3
TAB
TAB
TAB
TAB
I²PAK
Order codesVDSS
@TJmaxRDS(on) max.
ID PTOT
STD10NM60N
650 V < 0.55 Ω 10 A
70 W
STF10NM60N 25 W
STI10NM60N
70 WSTP10NM60N
STU10NM60N
Table 1. Device summary
Order codes Marking Package Packaging
STD10NM60N 10NM60N DPAK Tape and reel
STF10NM60N 10NM60N TO-220FP Tube
STI10NM60N 10NM60N I²PAK Tube
STP10NM60N 10NM60N TO-220 Tube
STU10NM60N 10NM60N IPAK Tube
www.st.com
Contents STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
2/27 DocID15764 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DocID15764 Rev 7 3/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Electrical ratings
27
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
UnitTO-220
I²PAKTO-220FP IPAK DPAK
VGS
Gate- source voltage ± 25 V
ID
Drain current (continuous) at TC
= 25 °C 10 10 (1)
1. Limited by maximum junction temperature.
10 A
ID
Drain current (continuous) at TC
= 100 °C 5 5 (1)
5 A
IDM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 32 32 (1)
32 A
PTOT
Total dissipation at TC
= 25 °C 70 25 70 W
dv/dt(3)
3. ISD
≤ 10 A, di/dt ≤ 400 A/μs, VDS
peak ≤ V(BR)DSS
, VDD
= 80% V(BR)DSS
.
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC
=25 °C)
2500 V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
UnitTO-220
I²PAKTO-220FP IPAK DPAK
Rthj-case
Thermal resistance junction-case max 1.79 5 1.79 °C/W
Rthj-amb
Thermal resistance junction-ambient max 62.50 100 °C/W
Rthj-pcb
Thermal resistance junction-pcb max 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
4 A
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
200 mJ
Electrical characteristics STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
4/27 DocID15764 Rev 7
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID
= 1 mA, VGS
= 0
ID
= 1 mA, VGS
= 0, TC
=150 °C
600
650
V
IDSS
Zero gate voltage
drain current (VGS
= 0)
VDS
= 600 V
VDS
= 600 V, TC
=125 °C
1
100
μA
μA
IGSS
Gate-body leakage
current (VDS
= 0)
VGS
= ± 25 V ± 100 nA
VGS(th)
Gate threshold voltage VDS
= VGS
, ID
= 250 μA 2 3 4 V
RDS(on)
Static drain-source on-
resistance
VGS
= 10 V, ID
= 4 A 0.53 0.55 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Input capacitance
VDS
= 50 V, f = 1 MHz,
VGS
= 0
- 540 - pF
Coss
Output capacitance - 44 - pF
Crss
Reverse transfer
capacitance
- 1.2 - pF
Coss eq
(1)
1. Coss eq.
time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS
increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS
= 0 to 480 V, VGS
= 0 - 110 - pF
Rg
Gate input resistance f=1 MHz open drain - 6 - Ω
Qg
Total gate chargeV
DD = 480 V, I
D = 8 A,
VGS
= 10 V
(see Figure 17)
- 19 - nC
Qgs
Gate-source charge - 3 - nC
Qgd
Gate-drain charge - 10 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
Turn-on delay time
VDD
= 300 V, ID
= 4 A,
RG
= 4.7 Ω, VGS
= 10 V
(see Figure 16)
- 10 - ns
tr
Rise time - 12 - ns
td(off)
Turn-off-delay time - 32 - ns
tf
Fall time - 15 - ns
DocID15764 Rev 7 5/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Electrical characteristics
27
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD
ISDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
8
32
A
A
VSD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage ISD
= 8 A, VGS
= 0 - 1.3 V
trr
Reverse recovery timeISD
= 8 A, di/dt = 100 A/μs
VDD
= 60 V
(see Figure 18)
- 250 ns
Qrr
Reverse recovery charge - 2.12 μC
IRRM
Reverse recovery current 17 A
trr
Reverse recovery timeISD
= 8 A, di/dt = 100 A/μs
VDD
= 60 V TJ = 150 °C
(see Figure 18)
- 315 ns
Qrr
Reverse recovery charge 2.6 μC
IRRM
Reverse recovery current 16.5 A
Electrical characteristics STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
6/27 DocID15764 Rev 7
2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and
I²PAKFigure 3. Thermal impedance for TO-220 and
I²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
ID
10
1
0.1
0.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10ms
Tj=150°CTc=25°C
Singlepulse
0.01
1µs
AM03944v1
ID
10
1
0.1
0.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10ms
0.01
Tj=150°CTc=25°C
Singlepulse
AM03945v1
ID
10
1
0.1
0.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10ms
Tj=150°CTc=25°C
Singlepulse
0.01
1µs
AM03944v1
DocID15764 Rev 7 7/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Electrical characteristics
27
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Normalized VDS vs temperature Figure 11. Static drain-source on-resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
ID
6
4
2
00 10 VDS(V)20
(A)
5 15 25
8
10
VGS=10V
30
12
14
5V
6V
4V
AM03947v1 ID
6
4
2
00 4 VGS(V)8
(A)
2 6 10
8
10
12
14VDS=20V
AM03948v1
VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.920.94
0.96
0.98
1.00
1.02
1.04
1.06
ID=1mA
1.08
1.10
AM09028v1RDS(on)
0.48
0.44
0.400 4 ID(A)
(Ω)
2 6
0.52
0.56
VGS=10V
8
AM00891v1
VGS
6
4
2
00 5 Qg(nC)
(V)
20
8
10 15
10
VDD=480V
ID=4A12
VDS
AM03951v1 C
1000
100
10
10.1 10 VDS(V)
(pF)
1 100
Ciss
Coss
Crss
AM03952v1
Electrical characteristics STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
8/27 DocID15764 Rev 7
Figure 14. Normalized gate threshold voltage vs temperature
Figure 15. Normalized on-resistance vs temperature
VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
ID=250µA
AM03953v1 RDS(on)
1.1
0.9
0.7
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100
1.7
1.5
1.3
2.1
1.9ID=4A
VGS=10V
AM03954v1
DocID15764 Rev 7 9/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Test circuits
27
3 Test circuits
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
10/27 DocID15764 Rev 7
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
DocID15764 Rev 7 11/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Table 9. DPAK (TO-252) type A mechanical data
Dim.mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R 0.20
V2 0° 8°
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
12/27 DocID15764 Rev 7
Figure 22. DPAK (TO-252) type A drawing
0068772_K_type_A
DocID15764 Rev 7 13/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Table 10. DPAK (TO-252) type E mechanical data
Dim.mm
Min. Typ. Max.
A 2.18 2.39
A2 0.13
b 0.65 0.884
b4 4.95 5.46
c 0.46 0.61
c2 0.46 0.60
D 5.97 6.22
D1 5.21
E 6.35 6.73
E1 4.32
e 2.286
e1 4.572
H 9.94 10.34
L 1.50 1.78
L1 2.74
L2 0.89 1.27
L4 1.02
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
14/27 DocID15764 Rev 7
Figure 23. DPAK (TO-252) type E drawing
0068772_K_type_E
DocID15764 Rev 7 15/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Figure 24. DPAK footprint (a)
a. All dimensions are in millimeters
Footprint_REV_K
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
16/27 DocID15764 Rev 7
Table 11. TO-220FP mechanical data
Dim.mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
DocID15764 Rev 7 17/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Figure 25. TO-220FP drawing
7012510_Rev_K_B
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
18/27 DocID15764 Rev 7
Table 12. I²PAK (TO-262) mechanical data
DIM.mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E 10 10.40
L 13 14
L1 3.50 3.93
L2 1.27 1.40
DocID15764 Rev 7 19/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Figure 26. I²PAK (TO-262) drawing
0004982_Rev_H
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
20/27 DocID15764 Rev 7
Table 13. TO-220 type A mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
DocID15764 Rev 7 21/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Package mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
22/27 DocID15764 Rev 7
Table 14. IPAK (TO-251) mechanical data
DIM.mm.
min. typ max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5
0.3
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10 o
DocID15764 Rev 7 23/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Package mechanical
27
Figure 28. IPAK (TO-251) drawing
0068771_J
Packaging mechanical data STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N,
24/27 DocID15764 Rev 7
5 Packaging mechanical data
Table 15. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
DocID15764 Rev 7 25/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N Packaging mechanical
27
Figure 29. Tape for DPAK (TO-252)
Figure 30. Reel for DPAK (TO-252)
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. onlyincluding draft andradii concentric around B0
AM08852v1
Top covertape
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
Revision history STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
26/27 DocID15764 Rev 7
6 Revision history
Table 16. Document revision history
Date Revision Changes
10-Jun-2009 1 First release
12-Jan-2010 2 Figure 4: Safe operating area for TO-220FP has been corrected
31-Mar-2010 3 Features have been corrected
17-Sep-2010 4 Content reworked to improve readability
24-Nov-2010 5 Corrected ID
value
16-Nov-2012 6 Inserted new package and mechanical data: I²PAK
18-Jul-2013 7
Updated Section 4: Package mechanical data.
Minor text changes.
DocID15764 Rev 7 27/27
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N
27
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USEIN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITHPRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS ORENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNEDFOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED INWRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THECORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com