Device Modeling of Solar Cell

1

Modeling Solar CellStandard Model

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2011

Influence of Parameters

http://www.bee-tech.info/

2

Spice Model, Symbol, and Equivalent Circuit

.SUBCKT Cell Plus MinusR_RS1 N00A Plus 0.001 R_Rsh1 Minus N00A 100 D_D1 N00A Minus DIODE_CellI_I1 Minus N00A DC 4 .Model DIODE_Cell・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・.ENDS

U?CELL_L

+

C e l l _ L

Spice Model Symbol

Equivalent Circuit

D I O D E _ C e ll_ LD 1

R s h 1{R }I 1

4

R S 1

0 . 0 0 1

N 0 0 AP lu s

M in u s


3

Evaluation Circuit

Cell_L

+

U 1C E L L _ L

V 10 V d c

I s e n c e

0 V d c

R 11 0 0

0


4

1.Series resistance: R_RS1=0.0001, 0.001,and 0.01

V_V1

0V 100mV 200mV 300mV 400mV 500mV 600mV 700mV 800mVI(Isence)

0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A


R_RS1= 0.001

0.0001

0.01

5

V_V1


0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

2.Shunt resistance: R_Rsh1=1, 100, and 10k


R_Rsh1= 100

10k

1

6

V_V1


0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

3. DIODE_Cell_L : IS=1E-7, 1E-6, and 1E-5


IS= 1E-61E-7

1E-5

7

V_V1


0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

4. DIODE_Cell_L : N=1, 1.5, and 2


N=1.5

2

1

8

V_V1


0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

5. DIODE_Cell_L : RS=1E-4, 1E-3, and 1E-2


RS=1.00E-3

1.00E-2

1.00E-4

9

Effect of Model Parameters


Increase: R_RS1

decrease: R_Rsh1

DIODE_CELL_L: IS and N

DIODE_CELL_L: RS

V_V1


0A

0.5A

1.0A

1.5A

2.0A

2.5A

3.0A

3.5A

4.0A

4.5A

5.0A

Technology

Device Modeling of Solar Cell