Photovoltaics. Lecture 6. CIGS

Universität Karlsruhe (TH)

1Photovoltaics. Lecture 6. CIGS.

From previous lecture:

Contacts resistance and recombination.

TOM TIEDJE et al., IEEE TRANS. ON EL. DEVICES, VOL. ED-31, NO. 5 , MAY 1984

Thickness dependant efficiency.

Useful recombination limits.

Universität Karlsruhe (TH)

2Photovoltaics. Lecture 6. CIGS.

Few words on amorphous Si:

Semi-direct band gap,with exponential edges.

Absorption up to 2.5 times higher than in crystalline Si.

Hydrogen improves properties.

Universität Karlsruhe (TH)

3Photovoltaics. Lecture 6. CIGS.

Few words on amorphous Si:

1.7eV

1.1eV

Staebler-Wronski Effect:Significant decline in the efficiency of a-Si:H solar cells during first few hundred hours of

illumination

Universität Karlsruhe (TH)

4Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS) solar cells:

Universität Karlsruhe (TH)

5Photovoltaics. Lecture 6. CIGS.

Solar cells industry:

H.S. Ullal and B. von Roedern, NREL/CP-520-42058, September 2007

Universität Karlsruhe (TH)

6Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS):

C

-phase CuIn3Se5

R. Herberholz et al.,Euro. Phys. J. AP 6, 131 (1999)

Universität Karlsruhe (TH)

7Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS):

E (x)[eV] = 1,02 +0,67x + 0,11x(x-1)

Universität Karlsruhe (TH)

8Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS):

Universität Karlsruhe (TH)

9Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS):

Universität Karlsruhe (TH)

10Photovoltaics. Lecture 6. CIGS.

Cu(Inx,Ga1-x)Se2 (CIGS):