N.P. Stepina, E.S. Koptev, A.G. Pogosov, A.V. Dvurechenskii, A.I. Nikiforov

ooo : WL : VRH o

3-41011-2 10 -15 1-1.5 Ge Ge Si INSTITUTE OF SEMICONDUCTOR PHYSICS, SIBERIAN BRANCH OF THE RUSSIAN ACADEMY OF SCIENCE 2D

- .

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81011 -2 ~3HTREM ~41011 -2 ~ 81011 -2 (200200 )

3.

hopping regimediffusive regimeG>0.4G0G

VRH b=B/Btr , Btr=h/2el2, - digamma ij21N -

G>0.4e2/h - G

Negative magnetoresistance, VRH modelThe behavior of length parameter with x is opposite than VRH theory predictsr ~ (T0/T)1/2

, WL

, WL

xLf*lx*kFlasdrs,4K4713414.31351.436e-65.5e-55.8e-966214214.51411.451e-55.6e-52.8e-85918612.3851.233e-54.8e-55e-83390*50.510.8591.080.00454.2e-54e-622250*12.14.7241.040.794.06e-51.7e-51

L G(T) L MC

, ,

. . G ( ) , .

:

. , . . , , . , , .

[B.L. Altshuler, A.G. Aronov, and D.E. Khmelnitsky, J. Phys. C 15, 7367 (1982)]

*