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part I
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Light Emitting Diode(LED)Laser Diode(LD)Photo Diode(PD)Solar
Cell
Metal-Semiconductor Field Effect Transistor(MESFET)Hetero
Bipolar Transistor(HBT)High Mobility Electron Transistor(HEMT)
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()Si, Ge, (C)GaAs, InP, InAs, InSb, GaNCuInSe2
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diamondzincblendewurtzitechalcopyrite
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1EwaldX
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GaAs8,800 cm2/Vs Si1,350 cm2/VsAlGaAs, AlGaInP, InGaAsP,
InGaN,
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SiGaAsAlGaInPInGaAsPGaInNICCPUCD,DVD,1.55m
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EghvEghvLDLEDPD
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Eg c h 1.41 eV (GaAs) 1.55m (LD)890 nm0.8 eV
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InGaAs InxGa1-xAs (0x1)x : In
IIIxIII1-xV, IIIxIIIyIII1-x-yV, IIIVyV1-y, IIIxIII1-VyV1-y,
InGaAs, AlGaInP, GaAsP, InGaAsP, In
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InxGa1-xAsyP1-y
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LEDLD
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T. Mukai et al, Jpn. J. Appl. Phys., 38, p.3976 (1999)
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nnpp+LED
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Laser Diode)
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nnpp+LD
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LEDLDLEDLD
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HEMT
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nm() ppm
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LD,LED
IC
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epitaxy = epi + taxyepi taxiz
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Liquid Phase Epitaxy(LPE)
Halide Vapor Phase Epitaxy(HVPE)
OrganoMetalic Vaper Phase Epitaxy(OMVPE, MOVPE, MOCVD)
Molecular Beam Epitaxy(MBE)
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Liquid Phase Epitaxy(LPE)
nm
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Halide Vapor Phase Epitaxy(HVPE)H2AsH3, PH3GaHCl
Cl, I )
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MOVPEMBE1m/h ML/sMLHEMTLDGaInNAs, InGaN
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MOVPETMGa( Ga(CH3)3 ), TMAl, TMIn,TEGa( Ga(C2H5)3 ), TEIn, AsH3,
PH3, NH3, TBAs( t-C4H9AsH2 ), TBP, DMHy, DEZnSiH4, H2Se
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MOVPE()H2
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MOVPE()
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MOVPE
LC504
LC50PH311-50TBP>1100AsH35-50TBAs70
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MOVPE
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MOVPEAsPN
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MBEMBE
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K
k(Knudsen cell)
(PBN)12009001000AsH3, PH3, As4
As2, P2MO
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MBEMBE Ga, Al, In, As
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MBEMBE
MBE
MOMBE
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MBENH3
N2 N-N 9.8eV NH3DMHyN2InNIn N500NH3 1RF13.56MHz)ECR2.45GHz,
875GMBE
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N2*N* N2+(N2+)*N+
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W.C. Houghes et al., J. Vac. Sci. Technol.,
B13(1995)1571.391428747822100W, 210-4TorrECR 2nd positive RF N*1st
positive
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LED, LD, HEMT
LPE, HVPE, MOVPE, MBE
