1/67

2. Power Semiconductor Devices

Power Electronic Systems & Chips Lab., NCTU, Taiwan

Power Electronic Systems & Chips Lab.

~

Fundamentals of Power Semiconductor Devices, B. Jayant Baliga, Springer, 1st Ed., May 2008.

2/67

Semiconductors, Towards Higher Speeds & Power

It took close to two decades after the invention of the solid-state bipolar transistor (1947) for semiconductors to hit mainstream applications

The beginnings of power semiconductors came at a similar time with the integrated circuit in the fifties

Both lead to the modern era of advanced DATA and POWER processing

While the main target for ICs is increasing the speed of data processing, for power devices it was the controlled power handling capability

Since the 1970s, power semiconductors have benefited from advanced Silicon material and technologies/ processes developed for the much larger and well funded IC applications and markets

Kilby`s first IC at TI in 1958

Robert N. Hall (left) at GE demonstrated the first 200V/35A Ge power diode in 1952

3/67

The Semiconductor Revolution

4/67

Power range of commercially available power semiconductorsSource: Bernet IEEE Trans. PE Nov., 2000

102

200

103

1700

25003300

550060007500

10412000

V[V]

102 200 500 103 2000 4000 6000 104 I[A]

Power MOSFET 200V/500A(Semikron)

1700V/2400AModule (Eqpec)

2500V/1800APress-Pack (Fuji)

3300V/1200AModule (Eqpec)

IGBT (market)

4800V/5000A(Westcode)

4500V/4000A(ABB, Mitsubishi)

6000V/6000A IGCT(Mitsubishi)

6000V/6000A GTO(Mitsubishi)

5500V/2300A(ABB)

7500V/1650A(Eqpec)

6500V/2650A(ABB)

12000V/1500A(Mitsubishi)

6500V/600A(Eqpec)

SCR

IGCT 10 kV(ABB)

IGCT 6.5 kV(ABB)GTO Emitter Turn-Off Thyristor (ETO)

Intelligent Power Module

Power MOSFET

5/67

Power Electronics Applications are .

REF: Power Semiconductors for Power Electronics Applications (Munaf Rahimo, ABB, 2014).pdf

6/67

Expanding Range of Application of Power Devices

7/67

Basis in Power Electronics

Requirements (Specifications) High Efficiency (>80%) High Power Density (> 100W/in3) High Reliability (MTBF > 105 Hrs) Low Cost (< 0.1-0.5 US/Watt) EMC Regulations (FCC Class B) Safety Regulations (UL)

Modern Power Devices Power MOSFET Insulated Gated Bipolar Transistor (IGBT) Static Induction Thyristor (SIT) MOS Controlled Thyristor (MCT) Insulated Gated Control Thyristor (IGCT) Injection Enhanced Gate Thyristor (IEGT)

Power Switching Techniques Pulse Width Modulation (PWM) Resonant Switching Quasi-Resonant Switching Soft PWM Switching Phase Shift PWM

Basic Power Converters AC/DC Converter (Rectifier) DC/DC Converter (Chopper) DC/AC Converter (Inverter) AC/AC Converter (Cycloconverter)

8/67

Power Conversion Process

Input Power Power Conversion Output Power

Passive Power ComponentsControl and Sensing Devices

Active Power Devices

battery

mains

Photo

voltaic

DCAC

Power Supply Design

Power Converting Systems

LOADINPUTFILTER

What are the applications?

What is the power source and specifications?

Specs. Specs.

OUTPUTFILTER

What is the power requirement?

POWERCONVERTER

EfficiencyPower Density

CONTROLLER

RegulationDynamics

Power Electronics = Efficient Power Conversion + Robust Power Control

SOURCE

10/67

Power Conversion is the Control of Power Flow

InputFilter

Rectifier PFCSwitching

DC-DCTransformer

OutputCircuit

Power Conversion is the control of power flow!

LOADSOURCE

Possible circulating energy!

~

11/67

Control of Power Electronic Systems

ControllingSystem Digital Circuit Power Circuits

ControlledSystem

Power Input

(feedback sensing)(loop gain shaping)(realization)

~

12/67

Power Conversion Measured in Watts

( Electricity is 25% of running costs )

13/67

Power Conversion Measured in Time

Power In

0.1s 1s 10s 100s

System Action

1ms

ANALOG DIGITAL10ms

PowerFilter

PowerModule

PowerFilter

Sensors

GateDriver

Sensors

Sensors

InnerLoop

LoadController

SystemLevel

ControllerModulator

A to DConv.

A to DConv.

A to DConv.

Power Semiconductor Device is the Core of Power Electronics Technology

BusReturn

PFCcontrol

BusL

G

N

Input filter Rectifier PFC

12V, 3A

5V, 10A

3.3V, 5A

PWMcontrol

MagneticAmpreset

IsolatedDC-DC Converter

Xfmr Output circuits

Protection

The HF power conversion process is initiated by the switching of these two power MOSFETs!

The bulky DC-link capacitor provides intermediate energy buffer between input and output!

Powdered iron core

Bus

BusReturn

15/67

Ideal Switch

The ideal controllable switch has the following characteristics:1. Infinite blocking voltage and zero leakage current2. Infinite conducting current and zero conducting resistance3. Zero turn-on and turn-off time4. Zero switching loss5. No triggering power

is

vs

16/67

Practical Semiconductor Switch

Practical power semiconductor switch has following characteristics:1. On-state voltage is not zero and is usually increased with increasing current.

The conducting current is usually unidirectional.2. The off-state current is usually not zero. There is a leakage current, usually

micro amperes, when the device is off.3. There are considerable switching losses during the turn-on and turn-off

processes and these switching losses are highly dependent on the gate drivercircuit and switching techniques (passive or active snubber circuits).

17/67

Power Semiconductors: The Principle

18/67

Power Semiconductor Device Main Functions

Main Functions of the power device: Support the off-voltage (Thousands of Volts) Conduct currents when switch is on (Hundreds of Amps per cm2)

19/67

Silicon Switch/Diode Classification

Si Power Devices

20/67

Evolution of Silicon Based Power Devices

1960 1970 1980 1990 2000 2010

21/67

Power Semiconductor Processes

It takes basically the same technologies to manufacture power semiconductors like modern logic devices like microprocessors

But the challenges are different in terms of Device Physics and Applications

Doping and thickness of the silicon must be tightly controlled (both in % range) Because silicon is a resistor, device thickness must be kept at absolute minimum Virtually no defects or contamination with foreign atoms are permitted

Power Semiconductor Physics

Fundamentals of Power Semiconductor Devices, B. Jayant Baliga, Springer, 1st Ed., May 2008.

23/67

Silicon Power Semiconductor Device Concepts

Simplified Switching Waveforms for Diode Clamped Inductive Load

dV

Tv

Ti

oI

0

0

0

t

t

t

Off Off

On

Switch control signal

ss f

T 1

td(off) trv tfitc(off)

tri tf vtc(on)

td(on)

Won)(2

1oncod(on)c tIVW )(2

1offcod(off)c tIVW

oIdV

d oV I( )Tp t

T Tv i

ONV

ONT OFFT

offW

25/67

Switching Trajectories of a Power Transistor with Inductive Load

current sensing

0

load line

turn off

turn on

Switch with inductive load

Measurement of load line0

turn off

turn on

0

turn off

turn on

Switch with inductive load shunted by a diode

Switch with inductive load shunted by a diode and

capacitor

CCV

Ci

CEv

CCV

CCV

CCV

CEv

CEv

CEv

Ci

Ci

Ci

26/67

Power Diode Reverse Recovery

Reverse Recovery: Transition from the conducting to the blocking state

There is a reversing current flow through the diode when the diode is from ON to OFF!

27/67

Characteristics of Power MOSFET

Ratings: Voltage VDS

29/67

Power MOSFET Equivalent Circuit Model

(a) Transfer characteristics (b) Equivalent circuit showing components that have greatest effect on switching

D

G RG C ID

CGD

CGS

CDS

LD

LS

Body-drainDiode

S

D

S

ID

VGS

Slope = gfs

30/67

Physical Structure of NMOS and DMOS

Double-Diffused Vertical MOS Transistor (DMOS)

DrainCurrent flow

SiO2Gate

Source

Body

Substrate

source

p+p+

n+

L

n+ n+

n

Metal

)(21

tGSsatoxnD VvWUCi

Body

SiO2Gate

Source

Body

p-type substrate (Body)

Drain

p+p+

L

n+ n+

Metal

Channelregion

Enhancement-type NMOS Transistor

2)(21

tGSoxnD VvLWCi

31/67

Structure of an Vertical n-Channel Power MOSFET

(a) Vertical cross-section (b) perspective view of an n-channel power MOSFET.

A complete MOSFET is composed of many thousands of cells connected in parallel to achieve large gain and low on-state resistance. Some of the layers in the perspective view have been cut away to enhance the clarity of the drawing.

Gate oxide

Field oxideBody-source

short

Gate conductorSource

n n n n

n ParasiticBJT

Channel (gate)length (L)

Integraldiode

n

Di(drift region)

(body) (body)p p

Drainn

n

n n n np p

Sourceconductor

Fieldoxide

Gateconductor

Contact to source diffusion

Gateoxide

SingleMOSFET

cell

32/67

Resistance Distribution of a Power MOSFET

The on-state resistance of a power MOSFET is made up of several components

RDS(on) = Rsource + Rch + RA + RJ + RD + Rsub + Rwcml

whereRsource = Source diffusion resistanceRch = Channel resistanceRA = Accumulation resistanceRJ = "JFET" component-resistance of

the region between the two body regionsRD = Drift region resistanceRsub = Substrate resistanceRwcml = Sum of bond wire resistance

RSOURCE

Drain

n+ Substrate

P-Base

Gate

Source

RCHRJFET

RA

RD

RSUB

N+

Expitaxial Layer

Body DiodeBody Diode

33/67

Contributions to RDS(on) with Different Voltage Ratings

Source

Channel

Voltage Rating:

Packaging

Metallization

JFETRegion

ExpitaxialLayer

Substrate

50V 100V 500V

RWCML

RCH

REPI

34/67

On Resistance of Power MOSFET

RDS(on) vs. Current, APT50M75B2LLRDS(on) vs. Temperature, APT50M75B2LL RDS(on) vs. V(BR)DSS Doubling the current results in only about a 6% increase in RDS(ON) RDS(ON) approximately doubles from 25C to 125C. RDS(ON) also increase with its breakdown voltage

1.2

1.15

1.10

1.05

1.00

0.95

0.900 20 40 60 80R

DS

(ON

), D

RA

IN-T

O-S

OU

RC

E O

N R

ES

ISTA

NC

E

ID DRAIN CURRENT (AMPERES)

.5.0@10 ContIVV DGS NORMALIZED TO

VVGS 10

VVGS 20

2.5

2.0

1.5

1.0

0.5

0.0-50 -25 0 25 50 75 100 125 150R

DS

(ON

), D

RA

IN-T

O-S

OU

RC

E O

N R

ES

ISTA

NC

E(N

OR

MA

LIZE

D)

TJ JUNCTION TEMPERATURE(C)

0100 300 500 700 900 1100

RD

S(O

N)

Nor

mal

ized

to 5

00V

V(BR)DSS(Volts)

RDS(on) Versus VDSS8

6

4

2

35/67

Threshold Voltage

Threshold voltage, Vth, is defined as the minimum gate electrode bias required to strongly invertthe surface under the poly and form a conducting channel between the source and the drainregions.Vth is usually measured at a drain-source current of 250mA or 1mA. Common values are 2-4Vfor high voltage devices with thicker gate oxides, and 1-2V for lower voltage, logic-compatibledevices with thinner gate oxides. With power MOSFETs finding increasing use in portableelectronics and wireless communications where battery power is at a premium, the trend istoward lower values of RDS(on) and Vth.

VGS

ID

Slope = gfs

Vth

DSv

GSv

Di

G

D

S

36/67

Threshold Voltage

VGS(th) has a negative temperature coefficient -7 mV/C. The high gate impedance of a MOSFET makes it susceptible to spurious turn-on due

to gate noise. One of the more common modes of failure is gate-oxide voltage punch-through. Low

VGS(th) requires thinner ox-ides, which lowers the gate oxide voltage rating.

Output characteristics Transfer characteristics

negative temperature coefficient -7 mV/C.

MOSFET Dynamic Characteristics

The switching performance of a device is determined by the time required to establish voltagechanges across capacitances.

RG is the distributed resistance of the gate and is approximately inversely proportional toactive area.

LS and LD are source and drain lead inductances and are around a few tens of nH. CGD, Gate-to-drain capacitance, is a nonlinear function of voltage and is the most important

parameter because it provides a feedback loop between the output and the input of the circuit. CGD is also called the Miller capacitance because it causes the total dynamic input

capacitance to become greater than the sum of the static capacitances.

(a) Transfer characteristics (b) Equivalent circuit

Di

GSv

fsgslope = Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

'D

'S

Gate-to-Drain Capacitance

Ciss = CGS + CGD, CDS is shortedCrss = CGDCoss = CDS + CGD

A 600V HEXFET from IR

1

10

100

1000

10000

100000

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

C, C

apac

itanc

e (p

F)

issC

ossC

rssC

,0VVGS SHORTED dsgdgsiss CCCC ,

gdgsrss CCC gddsoss CCC

MHzf 1

Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

'D

'S

Typical values of input (Ciss), output (Coss) and reverse transfer (Crss) capacitances given inthe data sheets are used by circuit designers as a starting point in determining circuitcomponent values.

39/67

Input Capacitance Ciss

A MOSFETs switching speed is determined by its input resistance R and its input capacitance Ciss

A 600V HEXFET from IR

R GD

S

issC

1

10

100

1000

10000

100000

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

C, C

apac

itanc

e (p

F)

issC

ossC

rssC

,0VVGS SHORTED dsgdgsiss CCCC ,

gdgsrss CCC gddsoss CCC

MHzf 1

40/67

Input and Output Capacitance of Power MOSFET

dsC

gdC

gsC

D

S

GsD

Gate Drive

Gate supply voltage

GR

Input Impedance

Output Impedance

41/67

Miller Theorem

Miller theorem describes the way to convert a floating load intotwo grounded loads, in such way that the voltages and currentsare remained unchanged.

X YZ

I

X Y

Z1

I I

Z2

X

YYX

VVA

ZVVI ,

X

Y

YXX

VV

ZZZ

VVZIZV

1

111 AZZ

11

Y

X

XYY

VV

ZZZ

VVZIZV

1

222

A

ZZ 112

42/67

Miller Capacitance

MOSFET devices have considerable "Miller capacitance" between their gate and drainterminals. In low voltage or slow switching applications this gate-drain capacitance is rarely a concern,however it can cause problems when high voltages are switched quickly.

A potential problem occurs when the drain voltage of the bottom device rises very quickly due to turnon of the top MOSFET. This high rate of rise of voltage couples capacitively to the gate of the MOSFETvia the Miller capacitance. This can cause the gate voltage of the bottom MOSFET to rise resulting inturn on of this device as well ! A shoot-through condition exists and MOSFET failure is certain if notimmediate.

The Miller effect can be minimized by using a low impedance gate drive which clamps the gatevoltage to 0 volts when in the off state. This reduces the effect of any spikes coupled from the drain.Further protection can be gained by applying a negative voltage to the gate during the off state. Eg.Applying -10 volts to the gate would require over 12 volts of noise in order to risk turning on a MOSFETthat is meant to be turned off !

Get Rid of the Miller Effect with Zero-Voltage Switching, Christophe Basso, Application Manager, ON Semiconductor, Toulouse, France, Power Electronics Technology, pp. 62-63, November 2004.

)11(A

C )1( AC

C

A

A

43/67

Input Capacitance (Miller Capacitance)

dsC

gdC

gsC

D

S

GsD

Gate Drive

Gate supply voltage

GR

GDVGSeq )CA(1CC

Ceq is the total equivalent input capacitor seen from the gate source electrodes during the transition (on or off) and the gate current can be estimated as:

gate GD V GS GS eq GSI (C (1 A ) C ) dV /dt C dV /dt

44/67

Output Capacitance (Miller Capacitance)

dsC

gdC

gsC

D

S

GsD

Gate Drive

Gate supply voltage

GR

GDV

DSeq )CA1(1CC

Ceq is the total equivalent output capacitor seen from the gate source electrodes during the transition (on or off) and the output turn-off current can be estimated as:

off GD DS DS eq DSV

1I (C (1 ) C ) dV /dt C dV /dtA

45/67

Coss Output Capacitance of MOSFET

Power MOSFET Intrinsic CapacitancesCoss represents the output capacitance measured between the drain and source terminals with the gate shorted to the source for AC voltages. Coss is made up of the drain to source capacitance Cds in parallel with the gate to drain capacitance Cgd, or

For soft switching applications, Coss is important because it can affect the resonance of the circuit.

GateSupply voltage

Gate drivecircuit

Optionalnegative gatesupply voltage

Minimize this area

GR G

gdC

dsC

gsC

S

D

gddsoss CCC

Output Capacitance (Coss) of Power MOSFETThe output capacitance is measured between the drain andsource terminals with the gate shorted to the source for ACvoltages. The output capacitance Coss is made up of the drainto source capacitance CDS in parallel with the gate to draincapacitance CGD, or

Coss = CDS + CGDFor soft switching applications, Coss is important because it canaffect the resonance of the circuit.In high frequency applications, the loss due to Coss plays asignificant part of its total loss. For example, a 600V HEXFET(power MOFET from IR) in application of an offline 200Wforward converter switching at 200 kHz, the loss due to Coss isabout 77% of conduction loss and 16% of its total loss.

Simple equivalent circuit for a n-channel MOSFET, showing the parasitic capacitance, npn transistor and RB resistor.

Drain

Gate

Source

Drain

Gate

npn

Source

GDC

GR

GSC

DSC

BR

47/67

Simple Switching Loss Analysis of Power MOSFET

Typical switching circuit of a power MOSFET with an inductive load.

Typical switching waveforms of a power MOSFET with an inductive load.

A commonly used formula for estimating the power MOSFET drain-to-source switching loss PSW is given by

2 21 1 12 2 2SW D D OFF ON OSS D GS GS

P I V t t f C V f C V f

Di

DSi

GSi gR

gsV

DSvGSC

DSC

chi

DV

GSv

GDC

DV

DIONt OFFt

DSGDOSS CCC

REF: Power Supply Engineer's Guide to Calculate Dissipation for MOSFETs in High-Power Supplies, AN-1832, Maxim.

Calculating MOSFET Power Dissipation

1. This flow chart represents the iterative process of each MOSFET selection in a power supply (the synchronous rectifier and the switching MOSFET).

2. Typical power MOSFET on-resistance temperature coefficients range from 0.35%/C (black line) to 0.5%/C (red line).

Temperature C

Nor

mal

ized

on-

resi

stan

ce

1.6

1.4

1.2

1.0

0.8

0.6

0.4-60 -40 -20 0 20 40 60 80 100 120

Assume a junctiontemperature (Tj(hot))

for the MOSFET

Calaulate theMOSFETs RDS(ON)hotat the assumed TJ(hot)

Calculate the MOSFETspower dissipationusing RDS(ON)hot

Estimate the 0JA of theMOSFET including its

thermal dissipation path

Calculate the MOSFETstemperature rise using(TJ(rise)) above ambient

Calculate the ambienttemperature (TAMBIENT) thatwould cause the MOSFET

junction to reach theassumed temperature (TJ(hot))

IsTAMBIENT

less than theenclosures specified

maximum?

Yes

No

No

Yes

You must raisethe assumed (TJ(hot))

and/or select abetter MOSFET

and/or increase thecopper dedicated to

MOSFET powerdissipation, thusdecreasing JA

You may lowerthe assumed (TJ(hot))

and/or select aless-expensive

MOSFETand/or reduce the

copper dedicated to MOSFET powerdissipation, thusincreasing JA

IsTAMBIENT

Considerablymore than the

enclosures specifiedmaximum?

Done

49/67

Power Dissipation

The maximum allowable power dissipation that will raise the die temperature to the maximumallowable when the case temperature is held at 25C.

max 25jD

thJC

TP

R

whereTjmax = Maximum allowable temperature of the p-n junction in the device (normally 150C or

175C)RthJC = Junction-to-case thermal impedance of the device

50/67

Power Losses Result Temperature Rise

CSDP

JC

SA

JT

CT

ST

AT

JCCSSAJA

TJ : junction temperatureTA : ambient temperaturePD : power dissipationJA : thermal resistance from junction to ambientJC : thermal resistance from junction to caseCS : thermal resistance from case to surfaceSA : thermal resistance from surface to ambientth : thermal time constant

th

ott

JADAJ ePTT

)(

1

AT

JT

th t

(max)JT

PD = Conduction Loss (PC) + Switching Loss (PS) + Junction Capacitance Loss (PJ)

51/67

Power Semiconductor Power Ratings

Total IGBT Losses : Ptot = Pcond + Pturn-off + Pturn-on

IGBT: Insulated Gate Bipolar Transistor

(a) symbol (b) i-v characteristics (c) idealized characteristics

0 0

On

OffDSv

GSv

RMv

DSSBVG

C

E

DSv

CiCi

Ci

Combine advantages of MOSFET as a voltage control device and Bipolar PowerTransistor with a constant voltage drop VCE(sat) for high conducting current.

Minority carrier device, single quadrant device, and no inherent body diode. Generally switching speed is lower than MOSFET, while voltage blocking and

conduction loss are superior than MOSFET. Suitable for high voltage (>500V) andhigh current (>10A) applications.

Snubberless operation is possible. Most new IGBTs do not require snubbers.

REF: IGBT Characteristics - International Rectifier (an-983 IR).pdf

Measured Switching Processes of Power MOSFET and IGBThard turn-on and turn-off under ohmic-inductive load: a) Power-MOSFET module b) IGBT module

CEv

Ci

CEv

Ci

54/67

IGBT or MOSFET? Choose Wisely

REF: Carl Blake and Chris Bull, IGBT or MOSFET: Choose Wisely, International Rectifier 1997.

Volta

ge (V

)

1 20 kHz 100 kHZ0

200400

600800

1000

1200

1400IGBT

IGBT IGBT/MOSFET

MOSFET

MOSFET

For application voltages < 250V, MOSFETs are the device of choice. In searching many IGBT suppliers, you will findthat the selection of IGBTs with rated voltages below 600V is very small.

For application voltages > 1000V, IGBTs are the device of choice. As the voltage rating of the MOSFET increases,so does the RDS-ON and size of the device. Above 1000V, the RDS-ON of the MOSFET can no longer compete withthe saturated junction of the IGBT.

Between the 250V and 1000V levels described above, it becomes an application-specific choice that revolvesaround power dissipation, switching frequency and cost of the device.

? ? ?

MOSFET and IGBT Turn-off behavior

IGBT vs. MOSFET - Which Device to Select?

IGBT vs. MOSFET - Which Device to Select (Renesas 2012)

Device Structures

(a) 600 V SJ-MOSFET cross section

Collector

The P+ Collector

(b) 600 V G6H Trench IGBT cross section

Symbol Symbol

G

C

E

DSv

GSv

Di

G

D

S

56/67

The Key Underlying Tradeoffs

57/67

When to Use Summary: Conditions Based

58/67

When to Use Summary: Applications Based

59/67

IGBT vs. MOSFET 400V, 1.5 kW Inverter Motor Drive

IGBT vs. MOSFET - An Up-Close Look Example Application Analysis (Renesas, 2014).pdf

Summary: The evaluation is based on a three-phase motor drive with 400VDC, 1500W, rated current

4.9Arms and maximum current of 9.7Arms. The IGBT has the advantage at higher frequency due to better switching loss performance

(lower diode recovery loss) The MOSFET has the advantage at lower frequencies (below say 8 kHz) due to lower

conduction loss (a MOSFET has no knee in its forward characteristics as does an IGBT)

N

S

SN

1S

2S

3S

4S

5S

6SdcV

N

S

SN

1S

2S

3S

4S

5S

6SdcV

60/67

Comparison of IGBT and MOSFET Inverters in Low-Power BLDC Motor Drives

REF: 2006.Comparison of IGBT and MOSFET Inverters in Low-Power BLDC Motor Drives (pesc).pdf

IGBT and MOSFET output characteristics

Comparison for Conduction Loss

61/67

IGBTs Challenge MOSFETs in SPS

REF: IGBTs Challenge MOSFETs in switching power supplies (Switching Power magazine, Jan. 2002).pdf

Zero-voltage-switched full bridge power stage in IBM power system (2000)

62/67

MOSFET or IGBT in High Power PFC Converters

Calculated CMl00 DY-12H losses versus IOin 6 kW PFC circuit with Vs = 255 V rms.

6kW PFC Testing Circuit.

[1] B. Masserant and T.A. Stuart, Experimental verification of calculated IGBT losses in PFCs, IEEE Transactions on Aerospace and Electronic Systems, vol. 32, no. 3, pp. 11541158, July 1996.

[2] T.A. Stuart and Shaoyan Ye, Computer simulation of IGBT losses in PFC circuits, IEEE 4th Workshop on Computers in Power Electronics, pp. 8590, 1994.

63/67

Choosing Power Switching Devices for SMPS Designs MOSFETs or IGBTs

REF: AN-7010 Choosing Power Switching Devices for SMPS Designs MOSFETs or IGBTs (Fairchild).pdf

While IGBT and MOSFET gate drive requirements are similar, subtle differences inminimum required gate drive

voltage and gate drive source resistance require adjustments when switching fromone device to the other.

There is no across-the-board solution when using power switching devices; circuittopology, operating frequency, ambient temperature and physical size constraints allplay a part in determining the optimum choice.

In ZVS and ZCS applications with minimized Eon losses, MOSFETs are capable ofoperating at higher frequencies because of their faster switching and lower turn-offlosses.

For hard-switched applications, the MOSFET parasitic body diodes recoverycharacteristics can be a detriment. Conversely, since IGBT co-pack diodes arematched to the specific application, excellent soft-recovery diodes are matched withthe higher speed SMPS rated devices.

IGBT Power Module

LVICEMI

Filter

ACL R

S

Q2 Q1

Relay

DIP-Bridgeless PFCP

N

N2

Co Co Co

P

DIP-IPM

PFC Control IC

M

Microcontroller

HVIC HVIC HVIC LVOC

600V, 20ARMS

65/67

Fairchild: 3-Phase Motor Drive System Block Diagram Using Motion-SPMTM Products

Power MOSFETs Reading Map

)(tv

Pulse-widthmodulator

gate driver

cv)(t sGc

refv

+vH

t

tsTsdT

tv

tSelection of MOSFET Driver IC

Suppressing MOSFET Gate Ringing in Converters - Selection of a Gate Resistor

Selection of MOSFETs in Switch Mode DC-DC Converters (Application Bulletin AB-8 Fairchild)

Power MOSFET Basics (IR)

Get Rid of the Miller Effect with Zero-Voltage Switching, Christophe Basso, Application Manager, ON Semiconductor, Toulouse, France. Power Electronics Technology, Nov. 2004.

Matching MOSFET Drivers to MOSFETS (AN-799 Microchip)

Designing with Low-Side Gate Drive ICsDr. Van Niemala, Senior Member of the Technical Staff, Fairchild Semiconductor

Designing with Low-Side MOSFET DriversJohn McGinty, AN-24, Micrel, 1998.

Design and Application Guide for High Speed MOSFET Gate Drive Circuits (Laszlo Balogh, TI 2007)

Introduction to Power MOSFETs and Their Applications (AN-558 NS)

Gate Drive Design Tips (Ray Ridley, 2006)

HV Floating MOS-Gate Driver ICs (AN-978 IR)

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References

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[3] George J. Krausse, Gate Driver Design for Switch-Mode Applications and the DE-SERIES MOSFET Transistor, IXYS CompanyApplication Note, 2001.

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