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2002. 01. 10

REV.1

By Application Engineering Group

판매대리점 : 피앤에스반도체 www.pns4u.co.kr 02-2107-7240

IGBT Technical Trainingfor FSC Family

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Construction & Operation of IGBT

GATE EMITTER

COLLECTOR

N NP P

N-

P+N+

Structure Of IGBT

COLLECTOR

GATE

EMITTER

Equivalent Circuit

The operation of the IGBT simply can be treated as a partitioning of an

N-channel MOSFET and a PNP bipolar transistor.

The IGBT functions as a bipolar transistor that is supplied base current

by a MOSFET.

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IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar

to the power MOSFET in operation and construction.

These devices offer superior performance to the bipolar-transistors. They are core cost-

effective solution in high power, wide range of frequency applications

I G B T

VOLTAGE

LOW

SIMPLE

LOW

MEDIUM

MEDIUM

MOSFET

VOLTAGE

LOW

SIMPLE

HIGH

FAST

LOW

T R

CURRENT

HIGH

COMPLEX

LOW

SLOW

HIGH

SYMBOL

ITEM

CONTROL PARAMETER

CONTROL POWER

CONTROL CIRCUIT

ON-RESISTANCE

SWITCHING SPEED

SWITCHING LOSS

COMPARISON TABLE

What`s a IGBT ?

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Absolute Maximum Rating of IBGT

Tj(max) - TC

PC (max)

Symbol Descriptions

BVCES

BVGES

ICmax

ICpeak

PCmax

FBSOA

SCSOA

Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)Maximum voltage applicable between G-EMaximum DC current can flow into the collector. Indicated by radiation condition (ex: TC=25˚C)Maximum Peak current can flow into the collector. Indicated by current pulse width(ex:10μs) and Duty-cycle(ex:below 1%), and Radiation condition.Allowable collector loss and maximum current consumption.In usual case, at the temperature of TC (ex : 25˚C), the thermal resistance Rθjc = --------------------- becomes and usually indicated by its upper limit.

Forward Bias Safe Operating AreaIt is the maximum pulse responding operation range to the voltageVce between C-E and the graph of the collector current. The characteristics of the high voltage part is deteriorated due to the thermal loss and the over concentration of current. It is because of the phenomena called the second breakdown mode.Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to human fault then the flow of the abnormally high current would destroy the device, so the current sensing and the feedback to the control block become the necessity. Which requires the IGBT should withstand the short- circuit condition for about 3~5μs. ex: If the load is short-circuited when the applied voltage between the C-E is about 300~500V, then the current upto 8-12 times higher than the rated current will flow which would destroy the device within 20~30μs. Thus the protective circuit is designed to be about 10μs with the consideration of the feedback delay time.

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RθJ-C(I)

RθJ-C(F)

RθC-S

Thermal resistance between IGBT's junction to case

Thermal resistance between FRD's junction to case

Thermal resistance between the case of IGBT to the heat sink

Symbol Descriptions

Thermal Resistance

Electerical CharacteristicsSymbol Descriptions

BVCES

VGE(th)

ICES

IGES

Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited)

The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated current

(ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined.

Gate Threshold Voltage

The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex: 1mA).

The minimum and the maximum value is given.

Collector Cutoff Current

The maximum collector current when the gate and the emitter is short-circuited and

the rated voltage is applied to the collector.

Gate - Emitter Leakage Current

The maximum gate current when the collector and the emitter is short-circuited and

the rated voltage is applied between the gate-emitter.

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Symbol Descriptions

VCE(sat)

Qg

Cies

Coes

Cres

Td

Tr

Ton

Tf

Toff

Collector - Emitter Saturation Voltage

The saturation voltage between the collector and the emitter when the rated current is

applied to the collector and the rate voltage is applied between the gate and the emitter.

Total Gate Charge

The amount of the gate electric charge needed for the IGBT to be completely On.

The amount of the driving current needed can be decided.

Input Capacitance

Output Capacitance

Reverse Capacitance

Turn on Delay Time

The time for the output to reach the 10% of the maximum of the output current

waveform after the pulse is applied to the gate.

Turn on Rise Time

The time to reach from 10% to 90% of the output current waveform.

Turn on Time

The time for the output to reach the 90% of the maximum of the output current

waveform after the pulse is applied to the gate.

Turn off Falling Time

The time to reach from 10% to 90% of the output current waveform.

Turn off Time

The time for the output to reach the 10% of the maximum of the output current

waveform after the pulse is removed from the gate.

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HIGH VOLTAGEHIGH VOLTAGEHIGH CURRENTHIGH CURRENT

HIGH HIGH FREQUENCYFREQUENCY

GTO

BJT

IGBT

MOSFET

FREQUENCY

PO

WE

R

1 70 1000KHZ

IGBT Operation Area

25 KW

10

1

0.1

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IGBT

Module & Discrete

☞F.A. - Inverter, AC servo, Robotics

☞Power Supply - UPS, SMPS

☞Elevator

Industrial Applications of IGBT

☞Transportation -Ignition control, Battery charger☞Welding

machine

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IH-Cooker

IH-Jar(Rice Cooker)

4 |0 0

MWO

1 2 :3 0

IGBT

Module & Discrete

InverterAir-conditioner

Consumer Applications of IGBT

Washingmachine

CameraStrobo

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Examples of Application Circuit (I)

☞ home appliance (IH-JAR, IH-Cooker, MWO..)

☞ Package Type : TO-220, TO-3P, TO-264 (SGP.., SGH..., SGL...)

☞ Current rating : 30 ~ 80A

SINGLE ENDED TYPE (VCE : 900 ~ 1700V)

HALF BRIDGE TYPE (VCE : 600V)

2*IGBT DISCRETE

1*IGBT DISCRETE

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☞ Industrial Equipment (Welding, UPS, IH Heater)

☞ Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....)

☞ Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A

FULL BRIDGE TYPE

4*1-PAK IGBT MODULE 2*2-PAK IGBT MODULE

Examples of Application Circuit (II)

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☞ 3Phase Motor Drive.(Inverter,Frequency Converter)

☞ Package Type : 6-Pak,2-Pak,1-Pak Module(FM6G...,FM2G...,FM1G....)

☞ Current Rating : 600V : 50 ~ 600A, 1200V : 50A ~ 200A

M

3PHASE BRIDGE TYPE

6*Discrete CO-PAK1*6-PAK IGBT MODULE2*2-PAK IGBT MODULE6*1-PAK IGBT MODULE

Examples of Application Circuit (III)

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Examples of Application Circuit ( )Ⅳ

DC.MFrom

Rectifier

DC Servo (NC, ROBOT)DC Chopper

DC.M

FromRectifier

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Examples of Application Circuit ( )Ⅴ

Low Output CVCF Inverter

Filter

CVCF Inverter (UPS)

M

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Examples of Application Circuit ( )Ⅵ

VVVF Inverter (PWM)

VVVF Inverter (PAM)

M

M

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UnitPFCorctifierReDiode

IGBT ModulesIGBT Modules

UnitIsolation

CPUControlfor

SupplyPower

DrivingGatefor

SupplyPower

MultiIsolated

DriversGate

UnitIsolation

UnitgsinSen

Capacitors

LinkDC

Variable Voltage &Variable Frequency

MotorsACSourceAC

Constant Voltage &Constant Frequency

Block Diagram of Inverter System

. Using the Conventional IGBT Modules

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DrivingGatefor

SupplyPower

MultiIsolated

Controlfor

SupplyPower

Capacitors

LinkDC

CPU

Variable Voltage &Variable Frequency

MotorsACSourceAC

Constant Voltage &Constant Frequency

V~250100

IGBTs

UnitIsolation

UnitgsinSen

DriversGate

UnitPFCorctifierReDiode

Home Appliances Application

. Using the Conventional IPMs

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+

PWM

To Gate

3φ

Welding Output

Starter

Voltage

Current

Full Bridge Topology 50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity

Welding Machine type-1

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+

PWM

To Gate

3φ

Welding Output

Starter

Voltage

Current

2 IGBT Forward Topology 20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity

Welding Machine type-2

* Normally IGBT using by parallel connection Parallel numbers depend on output power

* Need Vce(sat) matching tightly (with in 0.1V)

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+

PWM

To Gate

3φ Welding Output

Starter

Voltage

Current

Half Bridge Topology 50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity 20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity

Welding Machine type-3

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Output

Ac AC-DC Converter

Battery Pack

ControlCircuit

To IGBT

Output

Voutput

Application

Personal Use 10~50A / 600V,1200V(Depend on Battery Design)(Discrete) For Group Source 50~600A / 600V,1200V(2Module,1Module)

Un-interruptible Power Supply

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AC To Load

Controller

Vout

T

Regulated DC Output

V,I

P.F > 0.99

Application

20~40A/600V(Discrete) Home Appliance, Air-conditioner For Telecommunication Power and industrial power

Power Factor Correction

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Camera Strobe - SCRs previously used in cameras change to IGBTs .- By using IGBTs in strobe of cameras, flash control for exact focusing and red-eye protection can be possible. - Strobe application needs low Vce(sat), high peak current capability of IGBT because of the relatively long switching period of a couple of milli-seconds.- Industry needs trench IGBT for low-voltage operating battery system from 3V source.

+ +

+

1 2

+

A method of using SCRs A method of using IGBT

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Induction Heating JAR & Cooker

AC

Gate DriveCircuit

Current Feedback IH -Controller

This single ended resonant inverter is developed for the rice cookerbecause of simple construction, high efficiency and low cost.

■ IGBTSolutions - SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D

Half & FullBridge Type

Single Ended Type

■ Features - Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD

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Micro Wave Oven (ZVS type)

■ IGBTSolutions

DISPLAY

u-Com (4-Bit)

Control Circuit&

Gate Driver

InputKeyPAD

AC

This single ended resonant inverter is developed for food cooker because of simple construction, high efficiency and low cost.

■ Features - Low Saturation Voltage - Simple Gate Drive - Wide SOA - IGBT With FRD

4 |0 0

- SGH40N60UFD - SGL80N60UFD - SGL160N60UFD - SGL60N90DG3 - SGL40N150D - FGL40N150D - FGL60N170D

Half & FullBridge Type

Single Ended Type

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VCC

DRIVE IC 1

23

1 2

1 2

12

VCC1

VCC2

1

23

1

23

1 2

1 2

IGBT Gate Drive Solutions-1

- Home Appliance(IH jar/cooker)- Single ended topology- General analog drive IC- Device :AN6711(Panasonic) TA8316S(Toshiba) FAN8800(FSC)

- Small/Medium Power application- Bridge topology(half/full)- Photo coupler with analog drive IC- Device :HP3120 TLP250

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HVIC

1

23

1

23

12

12

12

1 2

HVIC

HIGHSIDE

1

23

1

23

1 2

12

12

- Small power application- Bridge topology(half/full)- High voltage analog process with bootstrap circuit- Device : IR2112(IR) ?(Toshiba) Harris

- Small Power application- Bridge topology & High side switch- High voltage analog process with bootstrap circuit- Device : IR2117(IR) ?(Toshiba) Harris

IGBT Gate Drive Solutions-2

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VCC1

VCC2

DRIVE IC

DRIVE IC

PROTECTION

PROTECTION

1

23

1

23

1 2

1 2

1 2

1 2

DRIVE IC

PROTECTION

PROTECTION

DRIVE IC

VCC1

VCC2

1

23

1

23

1 2

1 2

1 2

1 2

- Medium power application- Bridge topology(half/full)- Photo coupler + analog driver with de-saturation network- Device : Photo coupler + MC33153(Motorola) FAN8800(FSC)

- Medium/High Power application- Bridge topology (half/full)- Hybrid : photo coupler + discrete driver One chip : photo coupler with analog driver - Device : One chip, HP316J(HP) Hybrid, EXB841(Fuji) M57962(Mitsubishi)

IGBT Gate Drive Solutions-3

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Power Loss

= Switching Loss + Conduction Loss

▶ Switching Loss = Turn On Loss + Turn Off Loss

Vce(sat) Leakage Current

VceIc

Conduction Loss

Off TimeOff Time On TimeTurn On Time

Turn OffTime

Turn On Loss

Turn OffLoss

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Half Bridge Test Circuit

+

-

+

-15V

Load

+ 15V

- 15VD.U.T.

SameD.U.T.

Rg

Waveform

Switching Test of IGBT

Inductive Load

G

G

G

Vge

Ic

Vce

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Question : What is a difference between CO-PAK and DISCRETE in IGBT?

Answer : - CO-PAK IGBT have a parallel DIODE. freewheeling current can flow through a parallel DIODE. - CO-PAK is commonly used in Bridge Topology and DISCRETE is used in Single Ended Topology. CO-PAK IGBT => IGBT + DIODE in one PACKAGE DISCRETE IGBT => Only IGBT

Application Example

-Forward SMPS-Fly-back SMPS

M

-DC Motor Control

Discrete IGBT CO-PAK

- Induction Heating - Lamp Ballast - Induction Motor

Transformer

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Question : What is the Short Circuit Withstand Time(Tsc) ?

Answer : - IGBTs are need to be protected from over current caused by Motor destruction or fault by noise. Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time under Short circuit condition - Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc.

MControl &Driver

Over Current Detect & Feedback

Delay time 3~7uS

SC --> Detecting abnormal condition --> Feedback --> Gate Turn-off (Over Vce(sat),DC line current) (Soft Turn-off)

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Question : What is a difference between RUF and UF/XF SERIES ?

Answer : - IGBT application is mainly divided into two parts. . One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR). and the other is power conversion application(SMPS,UPS, CONVERTER). - product line-up and characteristics are as follow.

Series

RUF/RUFD

UF/UFD

XF/XFD **

NO Suffix

Application

Motor

SMPS(<50khz),UPS

SMPS(>100khz)

IH Cooker, Strobo

Design key point

Rugged,SC Rated

High performance

High Speed

depend on System

Characteristics

Vce(sat)=2.2V,tf=120nS

Vce(sat)=2.0V,tf=80nS

Vce(sat)=2.5V,tf=30nS

depend on Device

Example

SGP5N60RUFD

SGP23N60UFD

?????

SGL40N150D

SGR15040L

** : under developing

- The ordering system of IGBT Module is not classified as applications but is follows US series for convenience. But basic characteristics of Module is identified with that of Discrete IGBT RUF Series. (Rugged,SC Rated)

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Question : In place of MOSFET, IGBT can be used in power conversion application?Answer : * IGBT can take the place of MOSFET in power conversion applications because of the same gate drive method, voltage driving. * Take care of the specific characteristic of your system before applying IGBT. * Especially, in bridge topologies, do use the CO-PAK IGBT including diode. 1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems) - RUF/RUFD : UP TO 30KHZ - UF/UFD : UP TO 70KHZ (for hard switching) - XF/XFD : UP TO 100KHZ 2) GATE DRIVE CIRCUIT - Lower gate-resistance is possible in bridge topologies than that of MOSFET because there is any limitation of gate-resistance which can destroying devices by dv/dt and di/dt. - Lower gate-resistance offers lower turn-on loss.

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Answer : * Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 .℃ * In motor applications, Fairchild IGBT offers the current value defined at the condition of Tc = 100 and in the power conversion applications, offers the value at Tc = 25 .℃ ℃ * The current rating of Tc = 25 is about double comparing with that of Tc = 100 .℃ ℃

SGP40N60UF(40A at Tc=25 )℃ SGP20N60RUF(20A at Tc=100 )℃

Question : What’s the IGBT’s Current Rating?

Same current rating

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Question : What’s Turn off Energy (Eoff) ?

Answer : * Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates and how to design the thermal management. * Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and switching frequency of systems * Eoff can provide more valuable information to designer than the turn-off falling time, tf.

Ic Vce

Turn off Waveform

Turn off Power (P=V*I)

Turn off Energy(E= P(t) )

S/W Loss=on loss+off loss =(Eon+Eoff) * f

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Question : How come Voltage Ratings are 600V / 1200V ?

Answer : * The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V. * For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC power source, and 2200/3300V rating for several kind of railway systems. * Industry needs 400/900/1500V rating IGBTs more and more.

AC 220 --> DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V )

AC 380 --> DC (400*1.4=560V) --> “ ( 560*1.8 = 1008V )

1. IGBT VOLTAGE RATING ( Bridge Topology )

2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching )

AC 220 --> DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V )

AC 110 --> DC(110*1.4=155V) --> “ (155*3.14 =490V) --> (490*1.5=750V )

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FAIRCHILD IGBTs Solution

We only recommend to use Fairchild IGBT to people who have used IGBTmade in some where else.That’s the only how they can well the superior quality of Fairchild IGBT.

• High Performance - Low Saturation Voltage - High Speed Switching - Low Turn-off Energy

• High Ruggedness - Latch-Free Characteristics - Short-Circuit Immunity

• High Current - Easy to Parallel Operation - Positive Temperature Coefficient

Fairchild offers... Performance Curve

2.0 2.1 2.2 2.3 2.4 2.5 2.60

20

40

60

80

100

600V @ Vce=300V

1200V @ Vce=600V

Eof

f [uJ

/A]

Vce(sat) [V]

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S G P 10 N 60 R UF D

Voltage Rating(X 10)

Current Rating

Device Type G:IGBT

S: SEMICONDUCTORF: FAIRCHILD

Package Type P: TO-220 R: D-PAK S: TO-220F U: I-PAK H: TO-3P W: D2-PAK F: TO-3PF I : I2-PAK L: TO-264

N : N-Channel

Built in FRD

R : Short Circuit Rated

UF : Ultra Fast S/W

Ordering Information of IGBT ■ Discrete

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FM E 6 G 30 US 60

Voltage Rating(X 10)

Current Rating

G: IGBT

Circuit Type 1 : Single 2 : Half Bridge 6 : 3Phase Bridge 7 : Complex

FAIRCHILD Module

Die characteristics US : Ultra Fast & SC Rated

Module Type Blank : Standard Type E : Econo Type C : Complex Type

Ordering Information of IGBT ■ Module

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High Performance IGBT

1.2 3 7 13 20 40 80

600 SGR2N60UF SGR6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH80N60UF

SGP6N60UF SGS13N60UF SGS23N60UF SGS40N60UF

600 SGR2N60UFD SGP6N60UFD SGP13N60UFD SGP23N60UFD SGH40N60UFD SGH80N60UFD SGL160N60UFD

SGS6N60UFD SGS13N60UFD SGS23N60UFD SGF40N60UFD

SGW6N60UFD SGW13N60UFD SGW23N60UFD

Vces [V]SymbolIc [A] @ Tc=100℃

■ High Performance IGBT

IGBT Line-up

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■ Rugged IGBT

5 10 15 20 25 30 50

600V SGP5N60RUF SGP10N60RUF SGP15N60RUF SGP20N60RUF SGH30N60RUF

SGW5N60RUF SGW10N60RUF

1200V SGH5N120RUF SGH10N120RUF SGH15N120RUF SGH20N120RUF SGH25N120RUF

600V SGP5N60RUFD SGP10N60RUFD SGH15N60RUFD SGH20N60RUFD SGH30N60RUFD SGL50N60RUFD

SGS5N60RUFD SGS10N60RUFD

SGW5N60RUFD SGW10N60RUFD

1200V SGH5N120RUFD SGH10N120RUFD SGH15N120RUFD SGH20N120RUFD SGL25N120RUFD

D-PAK I-PAK D2-PAK I2-PAK TO-220 TO-220F TO-3P TO-3PF TO-264

Symbol Ic [A] @ Tc=100℃Vces [V]

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5 10 15 20 25 30 50

600V FME6G10US60 FME6G15US60 FME6G20US60 FME6G30US60 Compact

FMC6G10US60 FMC6G15US60 FMC6G20US60 FMC6G30US60 FMC6G50US60 PIM

FMC7G10US60 FMC7G15US60 FMC7G20US60 FMC7G30US60 FMC7G50US60

1200V FME6G5US120 FME6G10US120 FME6G15US120 FME6G20US120 FME6G25US120 Compact

FMC7G5US120 FMC7G10US120 FMC7G15US120 FMC7G20US120 FMC7G25US120 PIM

Vces [V]Ic [A] @ Tc=100℃

PKG Type

50 75 100 150 200 300 400

600V FM2G50US60 FM2G75US60 FM2G100US60 FM2G150US60 FM2G200US60 FM2G300US60

FMBH1G50US60 FMBH1G75US60 FMBH1G100US60 FMBH1G150US60 FMBH1G200US60 FMBH1G300US60 FMBH1G400US60

FMBL1G50US60 FMBL1G75US60 FMBL1G100US60 FMBL1G200US60 FMBL1G200US60 FMBL1G300US60 FMBL1G400US60

1200V FM2G50US120 FM2G75US120 FM2G100US120 FM2G150US120 FM2G200US120

Vces [V]Ic [A] @ Tc=100℃

PKG Type

■ Molding Type IGBT Module

■ Compact / PIM Type IGBT Module

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400D-PAK

I-PAK

8 -SOP※ All of the Logic level Gate Drive

FGS20N40L(8-SOP)

SGR15N40L(D-PAK)

SGR20N40L(D-PAK)

SGU15N40L(I-PAK)

SGU20N40L(I-PAK)

Symbol Vces [V]Ic[A] pk

PKG Type130 150

15 40 60 80

900 SGF15N90D(TO-3PF)

SGL60N90DG3(TO-264)

TO-3PF1500 SGL40N150D

(TO-264)

1700 FGL60N170D(TO-264)

FGL80N170D(TO-264)

1500V SGL40N150(TO-264)

TO-264

Ic[A]Vces [V]Symbol PKG Type

■ Camera Strobe Application

■ Induction Heating Application

45/45

FME6G series FME6G series

FMC6G series FMC6G series

FMC7G series FMC7G series

FM2G series

FMBL series

FMBH series

FMBL series FME6G series

FMBH series FMC6G series

FM2G series FMC7G series

IGBT Module Packages & Equivalent Circuits