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INCHANGE Semiconductor isc Product Specification

isc websitewww.iscsemi.cn isc & iscsemi is registered trademark1

isc N-Channel MOSFET Transistor 2SK1199

DESCRIPTIONDrain Current ID= 2A@ TC=25!Drain Source Voltage-

: VDSS= 900V(Min)

Fast Switching Speed

APPLICATIONSDesigned for high voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 900 V

VGS Gate-Source Voltage "20 V

ID Drain Current-continuous@ TC=25! 2 A

Ptot Total Dissipation@TC=25! 50 W

Tj Max. Operating Junction Temperature 150 !

Tstg Storage Temperature Range -55~150 !

THERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 0.83 !/W

Rth j-a Thermal Resistance,Junction to Ambient 35 !/W

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7/25/2019 2SK1199

2/2

INCHANGE Semiconductor isc Product Specification

isc websitewww.iscsemi.cn isc & iscsemi is registered trademark2

isc N-Channel Mosfet Transistor 2SK1199

ELECTRICAL CHARACTERISTICS (TC=25)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 900 V

VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 2.0 4.0 V

RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A 5.0 7.0 !

IGSS Gate Source Leakage Current VGS= "16V;VDS= 0 "10 uA

IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 250 uA

VSD Diode Forward Voltage IF=2A; VGS=0 0.9 V

tr Rise time

VGS=10V;ID=1A;

RL=30#

60 ns

ton Turn-on time 70 ns

tf Fall time 60 ns

toff Turn-off time 125 ns

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