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BAV99
SmallSignalDiode
2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAV99 Rev. C1 1
August 2011
BAV99Small Signal Diode
Absolute Maximum Ratings* TA= 25C unless otherwise noted
* These ratings are limiting values above which the
serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of
150 degrees C.
2) These are steady state limits. The factory should be
consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Electrical Characteristics TA= 25C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 70 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 300 microseconds
1.0
8.0
A
A
Tstg Storage Temperature Range -55 to +150 C
Tj Operating Junction Temperature -55 to +150 C
Symbol Parameter Value Units
PD Power Dissipation 350 mW
RJA Thermal Resistance, Junction to Ambient 357 C/W
Symbol Parameter Test Condition Min. Max. Units
VR Breakdown Voltage IR= 100A 70 V
VF Forward Voltage IF= 1.0mA
IF= 10mA
IF= 50mA
IF= 150mA
715
855
1.0
1.25
mV
mV
V
V
IR Reverse Leakage VR= 70V
VR= 25V, TA= 150C
VR= 70V, TA= 150C
2.5
30
50
A
A
A
CT Total Capacitance VR= 0V, f = 1.0MHz 1.5 pF
trr Reverse Recovery Time IF= IR= 10mA, IRR= 1.0mA,
RL= 100
6.0 ns
SOT-23
3
1
2
Connection Diagram
3
1
1 2
3
A7
2
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BAV99
SmallSignalDiode
2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAV99 Rev. C1 2
Typical Performance Characteristics
110
120
130
140
150
1 2 3 5 10 20 30 50 100
Ta= 25 C
ReverseVoltage,VR[V]
Reverse Current, IR[uA]
0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
ReverseCurrent,I
R
[nA]
Reverse Voltage, V [V]
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
ForwardVoltage,VF[mV]
Forward Current, I [uA]
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
ForwardVoltage,V
F[mV]
Forward Current, I [mA]
0.6
0.8
1.0
1.2
1.4
10 20 30 50 100 200 300 500
Ta= 25 C
ForwardVoltage,V
F[V]
Forward Current, IF[mA]
0 2 4 6 8 10 12 141.0
1.1
1.2
1.3
Ta= 25 C
T
otalCapacitance[pF]
Reverse Voltage [V]
Figure 1. Reverse Voltage vs Reverse CurrentBV - 1.0 to
100uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uAFigure 4. Forward Voltage vs Forward
Current
VF - 0.1 to 10 mA
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mAFigure 6. Total Capacitance vs Reverse
Voltage
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BAV99
SmallSignalDiode
2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BAV99 Rev. C1 3
Typical Performance Characterist ics (Continued)
10 20 30 40 50 601.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
ReverseRecoveryTime[nS
]
Reverse Current [mA]
0 50 100 1500
100
200
300
400
IF(AV)
-AVERAGERECTIFIEDCURRENT-mA
Current[mA]
Am bient T emperatu re, TA
[oC]
0 50 100 150 2000
100
200
300
400
500
DO-35 Pkg
SOT-23 Pkg
PowerDissipation,P
D
[mW]
Av erag e Te mpe ra tu re , IO [oC]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectif ied Current (IF(AV)
)
versus Ambient Temperature (TA)
Figure 9. Power Derating Curve
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