220

2017年3月1日 受理* 豊田理研スカラー 京都大学大学院工学研究科分子工学専攻

絶縁体 -半導体界面における電荷輸送特性を計測する非接触評価法の開発

FI-TRMC

FETFET

Field-Induced Time-Resolved Microwave ConductivityFI-TRMC

/ p[1–5] n

μe [6]/PMMA

FI-TRMC

N

Pr

Nμ

DCy-NDI DCy-PDI DC8-PDI nAu/SiO2/PMMA/n /Au μe

DCy-NDI μe = 12 cm2 V–1 s–1

DCy-NDI Ar FET μe = 7.5 cm2 V–1 s–1

絶縁体─半導体界面における電荷輸送特性を計測する非接触評価法の開発

*櫻　井　庸　明*

Development of Contactless Method to Evaluate Charge Carrier Transport Property at Insulator–Semiconductor Interfaces

*Tsuneaki SAKURAI*

A novel contactless microwave-based method was developed to evaluate local-scale hole or electron mobility at any semiconductor–insulator interface. In this study, we focused on the evaluation of electron mobility even at ambient atmosphere, by using naphthalenediimide and perylenediimide derivatives as an organic semiconducting layer. In addition, a variable-temperature measurement system was newly con-structed, confirming that the local-scale electrical conduction mechanism at pentacene/poly(methylmethacrylate) is predominated by the hopping mechanism.

220

2017年3月1日 受理* 豊田理研スカラー 京都大学大学院工学研究科分子工学専攻

絶縁体 -半導体界面における電荷輸送特性を計測する非接触評価法の開発

FI-TRMC

FETFET

Field-Induced Time-Resolved Microwave ConductivityFI-TRMC

/ p[1–5] n

μe [6]/PMMA

FI-TRMC

N

Pr

Nμ

DCy-NDI DCy-PDI DC8-PDI nAu/SiO2/PMMA/n /Au μe

DCy-NDI μe = 12 cm2 V–1 s–1

DCy-NDI Ar FET μe = 7.5 cm2 V–1 s–1

絶縁体─半導体界面における電荷輸送特性を計測する非接触評価法の開発

*櫻　井　庸　明*

Development of Contactless Method to Evaluate Charge Carrier Transport Property at Insulator–Semiconductor Interfaces

*Tsuneaki SAKURAI*

A novel contactless microwave-based method was developed to evaluate local-scale hole or electron mobility at any semiconductor–insulator interface. In this study, we focused on the evaluation of electron mobility even at ambient atmosphere, by using naphthalenediimide and perylenediimide derivatives as an organic semiconducting layer. In addition, a variable-temperature measurement system was newly con-structed, confirming that the local-scale electrical conduction mechanism at pentacene/poly(methylmethacrylate) is predominated by the hopping mechanism.

221絶縁体 -半導体界面における電荷輸送特性を計測する非接触評価法の開発

Au/DCy-NDI/PMMA/SiO2/Au MIS(a) t vs q, (b) t vs Pr, (c)

Ninj vs Nμ, (d) X .

FI-TRMC /PMMAμ T . (a) T vs μ. (b) T–1 vs lnμ.

μe FETPDI

Tsub

μe DCy-PDI Tsub

Tsub 80 °Cμe = 0.2 cm2 V–1 s–1 X

DC8-PDI Tsub 80 °C

μe = 15 cm2 V–1 s–1

p–70 °C

FI-TRMC

FI-TRMCFET

exp(–Ea/kT)92 meV

p nFET

H28

REFERENCES Y. Honsho, T. Miyakai, T. Sakurai, A. Saeki, S. Seki, Sci. Rep. 2013, 3, 3182 W. Choi, T. Miyakai, T. Sakurai, A. Saeki, S. Seki, Appl. Phys. Lett. 2014, 105, 033302. Y. Tsutsui, T. Sakurai, S. Minami, K. Hirano, T. Satoh, W. Matsuda, K. Kato, M. Takata, M. Miura, S. Seki, Phys. Chem. Chem. Phys. 2015, 17, 9624–9628. T. Sakurai, Y. Tsutsui, W. Choi, S. Seki, Chem. Lett., 2015, 44, 1401–1403. Y. Tsutsui, G. Schweicher, B. Chattopadhyay, T. Sakurai, S. Seki, Y. H. Geerts, et al. Adv. Mater. 2016, 28, 7106–7114. J. Inoue, Y. Tsutsui, W. Choi, K. Kubota, T. Sakurai, S. Seki, ACS Omega, 2017, 2, 164–170.