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Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

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Page 1: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Ch.8 Layout Verification

TAIST ICTES ProgramVLSI Design Methodology

Hiroaki Kunieda

Tokyo Institute of Technology

Page 2: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

8.1 DRC/LVS

Page 3: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Layout Design

Gate Level Simulatior

Layout Design

Netlist

Mask Data

Layout Netlist

DRC/LVS

Functional Verification

ATPG

TestPattern

Page 4: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

DRC & LVS

[Objective]

to check design rule violation by DRC CAD (Design Rule Checker) and to check validity of layout by LVS CAD (Layout versus Schematic).

[Method]

1. DRC uses computational geometry to check relation of overlap or

distance between polygons of either the same or the different layers.

2. LVS uses schematic derived from layout result to compare components

and connections between original schematic and derive one.

[Problem]1. Reduction of scan path flip flops2. Speed up of testing such as concurrent testing

Page 5: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

L ayout Design 4

DRC (Design Rule Checker)

Page 6: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Problems when wire are too wide or narrow.

Polysilicon should extend beyond boundary of difusion area.

The cut of via must connect elements and not mistakenly connect to substrate or others.

Design Rule

Page 7: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Metal1 min-width=3λ, min-sep= 3λ

Metal2 min-width=3λ, min-sep= 3λ

poly min-width=2λ, min-sep= 2λ

n, p-dif min-width=3λ, min-sep(n-n, p-p)=3λ (n-

p10λ) Tube min-width=10λ,

min-distance(tub-active)= 5λ Transistors min-W/L=3λ/2λ poly

extension= 2λdif extension= 2λactive-poly/metal via=λmin-sep(tran.-tran.)= 2λmin-sep(tran-tub.tie) = 3λ

SCMOS Design Rules

Page 8: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Vias cuts=2λx2λ via =4λx4λ

n,p.diff-poly, poly-metal1n,p.diff-metal1, metal1-metal2

Tub ties cuts =2λx2λ metal =4λx4λ

Metal1 min-width=6λ, min-sep= 4λ available via to

metal2 Special rules

cut to poly – poly sep =3λpoly.cut-dif.cut sep=2λcut-tran.active sep =2λdif.cut-dif sep = 4λmeta2.via must not be directly over polysilicon

Prohibit small negative features.

SCMOS Design Rules (continue)

Page 9: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Mask Pattern Analysis

Clock wise direction for outer boundary

Anti-clock wise direction for inner boundary

Page 10: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Logic Operations

OR AND

SuB ExOR

Page 11: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

8.2 Post Layout Simulation

Page 12: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Basic Operation of Circuit ExtractionNOT, AND, OR between 2 masksgrow and shrink operation over

masks.

1) extraction of transistors AND(poly - p/n.diff) 2) identify via

grow cutAND(grown-cut, metal, poly)

Circuit Extraction

Page 13: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Cg: gate capacitance= 0.9fF/μm2 (2 μprocess)

Cgs/Cgd: source/drain overlap capacitance=Cox W (Cox: gate/bulk overlap capacitance)

Transistor Parasitics

Page 14: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Cj0 = εSi/xd = Cjo/[sqrt(1+Vr/Vbi)] Depletion region capacitance

Cj0 : zero-bias depletion capacitance εSi : permittivity of siliconxd : thickness of depletion region

depending on applied voltage.

Wire ParasiticsJunction capacitance

Page 15: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Plate capacitance per unit area assumes infinite parallel plates.

A fringe capacitance per unit perimeter must be added to take into consideration of the changes in electrical field at the edges.

Plate and fringe MOS capacitance

Page 16: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

0.3fF/cm2

(overlapping area)

0.1fF/cm2

metal 3

Depending on distance

Page 17: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Ohms per square [Ω/ ]= Sheet resistance

Resistance Measurement

0.5 μm process (λ=0.25 μm) 1) Polysilicon resistance

Rpoly=[18/3]x4[Ω/ ]=24 Ω2) n-diffusion resistance

[(9/3)+(6/3)+1/2]x2 [Ω/ ]=11 Ω

Page 18: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

8.3 Test

Page 19: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

L ayout Design 5

ATPG (Test Pattern Generation)

[Objective]

to generate test patterns to test IC after fabrication.

[Method]

D algorithm is used to generate test patterns, automatically.

to prove coincidence of logic functions between HDL description and logic gate circuit.

[Problem]1. Reduction of scan path flip flops2. Speed up of testing such as concurrent testing

Page 20: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Logical Fault Model

1. Stuck-at-0/1 Fault model : Logic value of wire segment is stuck at either logic 0 or logic 1.

2. Single Fault: only one fault happens for each sample.

3. Fault Test: logic circuit is tested by inserting various test input vectors and by observing its output, to check whether any single fault at each wire segment does not occur.

4. ATPG: Automatic Test Pattern Generator is a CAD software to find out necessary input test vectors.

5. Tester: in manufacture factory, tester is implemented so as to check volumes of chips in a short time, automatically.

Page 21: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

Fault Difference Function

d(x)= H(x) [g(x, 1) ? g(x, 0)]

Test vectors, satisfying 1. to drive 1 at wire with stuck at 0 fault 2. to set D, which is either 0 at fault or 1 at normal. 3. to transmit D to the output

d(x)= f(x)?f0(x)= H(X)g(x, H(x)) ? g(x, 0)= H(x)’ g(x, 0) ? H(x)g(x, 1) ? g(x, 0)= H(x)g(x, 1) ? (H(x)’ ? 1)g(x, 0)= H(x) [g(x, 1) ? g(x, 0)]

Page 22: Ch.8 Layout Verification TAIST ICTES Program VLSI Design Methodology Hiroaki Kunieda Tokyo Institute of Technology

D Algorithm

1. For stuck-at-fault 0, find out condition of inputs to set up

1.2. Set D at the wire.3. Decide wire logic values for

D to be transmitted to output.