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IGBTIGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD06N60RFTRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz
Datasheet
IndustrialPowerControl
Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.4www.infineon.com 2014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantageFeatures:
TRENCHSTOPTMReverseConducting(RC)technologyfor600Vapplicationsoffering
•OptimizedEon,EoffandQrrforlowswitchinglosses•Operatingrangeof4to30kHz•SmoothswitchingperformanceleadingtolowEMIlevels•Verytightparameterdistribution•Maximumjunctiontemperature175°C•Shortcircuitcapabilityof5µs•Bestinclasscurrentversuspackagesizeperformance•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant(soldertemperature260°C,MSL1)
CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
Domesticandindustrialdrives:
•Compressors•Pumps•Fans
G
C
E
G
E
C
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKD06N60RF 600V 6A 2.2V 175°C K06R60F PG-TO252-3
Datasheet 3 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet 4 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmaxTc=25°CTc=100°C
IC 12.06.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A
Turn off safe operating areaVCE≤600V,Tvj≤175°C,tp=1µs - 18.0 A
Diodeforwardcurrent,limitedbyTvjmaxTc=25°CTc=100°C
IF 12.06.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand timeVGE=15.0V,VCC≤400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=150°C
tSC
5
µs
PowerdissipationTc=25°C Ptot 100.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Valuemin. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,1)
junction - case Rth(j-c) - - 1.50 K/W
Diode thermal resistance,2)
junction - case Rth(j-c) - - 3.60 K/W
Thermal resistance, min. footprintjunction - ambient Rth(j-a) - - 75 K/W
Thermal resistance, 6cm² Cu onPCBjunction - ambient
Rth(j-a) - - 50 K/W
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet 5 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=6.0ATvj=25°CTvj=175°C
--
2.202.30
2.50-
V
Diode forward voltage VF
VGE=0V,IF=6.0ATvj=25°CTvj=175°C
--
2.102.00
2.40-
V
Gate-emitter threshold voltage VGE(th) IC=0.11mA,VCE=VGE 4.3 5.0 5.7 V
Zero gate voltage collector current1) ICESVCE=600V,VGE=0VTvj=25°CTvj=175°C
--
--
401000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=6.0A - 2.9 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 470 -
Output capacitance Coes - 24 -
Reverse transfer capacitance Cres - 14 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=6.0A,VGE=15V - 48.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 7.0 - nH
Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s
IC(SC)VGE=15.0V,VCC≤400V,tSC≤5µsTvj=25°C
- 46 - A
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 7 - ns
Rise time tr - 8 - ns
Turn-off delay time td(off) - 106 - ns
Fall time tf - 22 - ns
Turn-on energy Eon - 0.09 - mJ
Turn-off energy Eoff - 0.09 - mJ
Total switching energy Ets - 0.18 - mJ
Tvj=25°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=23.0Ω,RG(off)=23.0Ω,Lσ=50nH,Cσ=30pFLσ,CσfromFig.E
1) Not subject to production test - verified by design/characterization
Datasheet 6 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 48 - ns
Diode reverse recovery charge Qrr - 0.16 - µC
Diode peak reverse recovery current Irrm - 7.4 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -195 - A/µs
Tvj=25°C,VR=400V,IF=6.0A,diF/dt=770A/µs
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 8 - ns
Rise time tr - 8 - ns
Turn-off delay time td(off) - 115 - ns
Fall time tf - 35 - ns
Turn-on energy Eon - 0.15 - mJ
Turn-off energy Eoff - 0.13 - mJ
Total switching energy Ets - 0.28 - mJ
Tvj=175°C,VCC=400V,IC=6.0A,VGE=0.0/15.0V,RG(on)=23.0Ω,RG(off)=23.0Ω,Lσ=50nH,Cσ=30pFLσ,CσfromFig.E
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 74 - ns
Diode reverse recovery charge Qrr - 0.34 - µC
Diode peak reverse recovery current Irrm - 10.3 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -177 - A/µs
Tvj=175°C,VR=400V,IF=6.0A,diF/dt=770A/µs
Datasheet 7 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,VGE=15/0V,rG=23Ω,PCBmounting,6cm2Cu,Ptot=2,4W)
f,SWITCHINGFREQUENCY[kHz]
IC,C
OLLEC
TORCURREN
T[A]
0.1 1 10 1000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
1 10 100 10000.1
1
10
tp=10µs
20µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,PO
WER
DISSIPA
TION[W
]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
100
Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLEC
TORCURREN
T[A]
0 25 50 75 100 125 150 1750
2
4
6
8
10
12
14
Datasheet 8 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 5. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00
2
4
6
8
10
12
14
16
18
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 6. Typicaloutputcharacteristic(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00
2
4
6
8
10
12
14
16
18
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 7. Typicaltransfercharacteristic(VCE=10V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
4 5 6 7 8 9 10 11 120
2
4
6
8
10
12
14
16
18Tj=25°CTj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,C
OLLEC
TOR-EMITTE
RSAT
URAT
ION[V
]
0 25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0IC=0.5AIC=3AIC=6AIC=12A
Datasheet 9 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,rG=23Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
t,SW
ITCHINGTIMES
[ns]
3 4 5 6 7 8 9 10 11 121
10
100
td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,IC=6A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
t,SW
ITCHINGTIMES
[ns]
10 20 30 40 50 60 70 801
10
100
td(off)
tftd(on)
tr
Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SW
ITCHINGTIMES
[ns]
25 50 75 100 125 150 1751
10
100td(off)
tftd(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0,11mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GAT
E-EM
ITTE
RTHRES
HOLD
VOLTAG
E[V]
25 50 75 100 125 150 1752.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0typ.min.max.
Datasheet 10 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,rG=23Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
3 4 5 6 7 8 9 10 11 120.0
0.1
0.2
0.3
0.4
0.5
0.6Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=175°C,VCE=400V,VGE=15/0V,IC=6A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
10 20 30 40 50 60 70 800.0
0.1
0.2
0.3
0.4
0.5Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
25 50 75 100 125 150 1750.00
0.05
0.10
0.15
0.20
0.25
0.30Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=175°C,VGE=15/0V,IC=6A,rG=23Ω,DynamictestcircuitinFigure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
300 325 350 375 400 425 4500.0
0.1
0.2
0.3
0.4Eoff
Eon
Ets
Datasheet 11 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 17. Typicalgatecharge(IC=6A)
QGE,GATECHARGE[nC]
VGE ,GAT
E-EM
ITTE
RVOLTAG
E[V]
0 10 20 30 40 50 600
2
4
6
8
10
12
14
16120V480V
Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APAC
ITAN
CE[pF]
0 5 10 15 20 25 301
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤400V,startatTvj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC) ,SH
ORTCIRCUITCOLLEC
TORCURREN
T[A]
12 14 16 18 200
10
20
30
40
50
60
70
80
90
Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤400V,startatTvj=150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,S
HORTCIRCUITW
ITHST
ANDTIME[µs]
10 11 12 13 14 15 16 17 18 190
2
4
6
8
10
12
Datasheet 12 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 21. IGBTtransientthermalimpedanceasafunctionofpulsewidth1)(seepage4)(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.10327.9E-5
20.72994.0E-4
30.56821.8E-3
40.06380.0307
Figure 22. Diodetransientthermalimpedanceasafunctionofpulsewidth2)(seepage4)(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01
0.1
1 D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
11.09587.9E-5
21.66432.8E-4
30.74611.7E-3
40.08270.02494
Figure 23. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVER
SEREC
OVE
RYTIME[ns]
500 600 700 800 9000
20
40
60
80
100
120Tj=25°C, IF = 6ATj=175°C, IF = 6A
Figure 24. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr ,REV
ERSE
REC
OVE
RYCHAR
GE[µC]
500 600 700 800 9000.0
0.1
0.2
0.3
0.4
0.5
0.6
Tj=25°C, IF = 6ATj=175°C, IF = 6A
Datasheet 13 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Figure 25. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVER
SEREC
OVE
RYCURREN
T[A]
500 600 700 800 9004
5
6
7
8
9
10
11
12Tj=25°C, IF = 6ATj=175°C, IF = 6A
Figure 26. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr /dt,diodepeakrateoffallofI
rr [A/µs]
500 600 700 800 900-300
-250
-200
-150
-100
-50
0Tj=25°C, IF = 6ATj=175°C, IF = 6A
Figure 27. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWAR
DCURREN
T[A]
0 1 2 3 40
2
4
6
8
10
12
14
16
18Tj=25°C, VGE=0V
Tj=175°C, VGE=0V
Figure 28. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWAR
DVOLTAG
E[V]
0 25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0
IF=0.5AIF=3AIF=6AIF=12A
Datasheet 14 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
2.5
REVISION
06
05-02-2016ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
0
2.5
DOCUMENT NO.
Z8B00003328MILLIMETERS
4.57 (BSC)2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3
1.18
0.51
0.89
5.02
9.40
6.354.32
5.97
3
b3
A
DIM
b2
c
b
c2
A1
4,95
MIN2.16
0.64
0.46
0.65
0.40
0.00
1.78
1.02
5.21
5.846.22
6.73
1.27
10.48
5.50
MAX2.41
0.15
1.15
0.61
0.89
0.98
L
Package Drawing PG-TO252-3
Datasheet 15 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
Datasheet 16 V2.42014-03-12
IKD06N60RF
TRENCHSTOPTMRC-DrivesFastSeries
RevisionHistory
IKD06N60RF
Revision:2014-03-12,Rev.2.4Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2012-02-24 Final data sheet
2.2 2013-12-10 New value ICES max limit at 175°C
2.3 2014-02-26 Without PB free logo
2.4 2014-03-12 Storage temp -55...+150°C
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2018.AllRightsReserved.
ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesoffice(www.infineon.com).
PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotiveElectronicsCouncil.
WarningsDuetotechnicalrequirementsproductsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.