DCBD Bai Tap on Thi AY1112 S1

DCBDBTOTAY1112-S1trang 1/6

HBK TpHCMKhoa TBMT GVPT: H Trung M

Bi tp n thi mn Dng c bn dn AY1112-S1 (Ngoi cc bi tp cc chng BJT, JFET v MOSFET, SV lm thm cc BT sau)

1. Vi cc trng hp sau BJT hot ng min no?

a) NPN: VCB = 0.7V, VCE = 0.2V b) NPN: VBE = 0.7V, VCE = 0.3V c) NPN: VCB = 1.4V, VCE = 2.1V

d) PNP: VEB = 0.6V, VCE = 4V e) PNP: VCB = 0.6V, VCE = 5.4V f) PNP: VCB = 0.9V, VCE=0.4V

2. Vi hnh 1 cho trc VCC = 12V v BJT c = 100, hy tm RB v RC cho BJT min tch cc thun c im hot ng DC (im tnh Q) l ICQ = 3mA v VCEQ = 6V. Gi s gi RB vi gi tr va tm c, hy tm gi tr RC mch vn min tch cc thun.

Hnh 1 Hnh 2 Hnh 3 Hnh 4

3. Vi hnh 2, hy tm RB, RC v RE cho BJT min tch cc thun c im hot ng DC (im tnh Q) l ICQ = 4 mA v VCEQ = 4V. Bit VCC = 12V, VE = 4V v BJT c = 100. 4. Vi hnh 3, hy tm RB v RC cho BJT min tch cc thun c im hot ng DC (im tnh Q) l ICQ = 2 mA v VCEQ = 4V. Bit VCC = 10V v BJT c = 100. 5. Vi hnh 4, hy tm cc gi tr ca RC v RE cho BJT ch tch cc thun (bit =100) vi IC = 2mA v VC = 4.3 V. 6. Hy tm im lm vic DC (ICQ v VCEQ) ca BJT trong cc mch sau v cho bit n ang ch no. Gi s cc BJT c = 50 v bit BJT nu ch tch cc thun c |VBE| = 0.7 V..

Hnh 5

7. Xt BJT loi NPN ch tch cc thun. a) Hy xc nh IE, v cho BJT c IB = 5 A v IC =0.62 mA b) Hy xc nh IB, IC, v cho BJT c IE = 1.2 mA v =0.9915

8. Hy xc nh min lm vic ca BJT loi NPN c = 100 cho cc trng hp sau: a) IB = 50 A v IC = 3 mA. b) IB = 50 A v VCE = 5 V. c) VBE = 2 V v VCE = 1 V.


9. Hy tm hiu sut pht e, h s vn chuyn min nn B v ca BJT NPN vi cc tham s sau: NDE = 1x1017cm3, NAB = 1x1015cm3, Dn = Dp, WB = 120nm, v Lp= Ln = 2m.

(a)

(b) Hnh 6 Hnh 7 Hnh 8

10. Cho mch hnh 6 vi BJT c =100, ngi ta mun LED tt khi VI = 0V v LED sng vi ILED = 20mA v VLED = 2 V khi VI=5V. Hy tnh cc gi tr linh kin RB1 v R1 cho LED sng vi BJT ch bo ha. 11. Cho mch hnh 7 vi BJT c =100, hy xc nh VI c VCEQ = 6V. 12. Cho mch hnh 8.(a) vi BJT c IS = 5 x 1016A v >> 1 ( c IE IC), hy tm VX trong trng hp: a) khng dng xp x VBE ; b) dng xp x VBE =0.7V. 13. Cho mch hnh 8.(b) vi BJT c IS = 5 x 1017A , hy tm VX trong trng hp: a) VA = ; b) VA =5V.

Hnh 9 Hnh 10

14. Cho mch hnh 9 vi VCC = 5V, RE = 600, RC = 5.6K, R1 = 250K, R2 = 75K, = 120 v VA =. Cc t CC v CE ng vai tr ghp v bypass tn hiu AC, ngha l khi v m hnh tn hiu nh ta s nt tt chng v khi phn tch DC s h mch chng.

a) Tnh im tnh Q ca BJT (ICQ v VCEQ). b) Tnh cc tham s h ca m hnh tn hiu nh. c) Tnh h dn gm v li p AC AV = Vout/Vin d) in tr vo nhn cc nn ca BJT.

15. Mch gng dng in hnh 10 vi VCC = VEE = 6V v cc BJT c cng VBEQ = 0.7V, VA= , = 100. Gi s c 2 BJT c cng c tnh.

a) Mun c dng in chun IR = 1mA th R = ? b) Nu IR = 2 mA th in tr ti RL phi tha iu kin g mch trn vn l ngun dng? c) Mun c dng ra IOUT c sai s so vi IR khng vt qu 4% (ngha l (IRIOUT)/IR 4%) th ca

BJT phi tha iu kin g? d) Trng hp 2 BJT khng c cng c tnh th IOUT = ? Nu IR = 1mA v din tch min pht ca Q2

gp 2 ln din tch min pht ca Q1.


16. N-JFET c IDSS = 10mA v VTH = 4V. Hy cho bit min hot ng ca JFET ny nu ngi ta o c cc in th ti D, G v S so vi t trong cc trng hp sau:

a) VD = 5V, VG = 3.5V, v VS = 4V. b) VD = 4V, VG = 1V, v VS = 5V. c) VD = 5.5V, VG = 1V, v VS = 5V.

17. P-JFET c IDSS = 10mA v VTH = 4V. Hy cho bit min hot ng ca JFET ny nu ngi ta o c cc in th ti D, G v S so vi t trong cc trng hp sau:

a) VD = 4V, VG = 3V, v VS = 2V. b) VD = 4V, VG = 2V, v VS = 1V. c) VD = 5V, VG = 1V, v VS = 2V.

18. N-JFET c VTH = 4 V, IDSS = 10 mA v VA = . a) Vi VGS = 2 V, hy tm VDS ti thiu dng c hot ng min bo ha. Tnh ID vi VGS = 2 V

v VDS = 3 V. b) Cho VDS = 3 V, hy tm s thay i trong ID tng ng vi s thay i VGS t 2 n 1.6V. c) Vi VDS nh, tnh gi tr ca rds VGS = 0 V v VGS = 3 V. d) Nu VA = 100 V, hy tm in tr ra ro ca JFET khi hot ng trong min bo ha vi dng in ID l

1 mA, 2.5 mA, v 10 mA.

Hnh 11 Hnh 12 Hnh 13 Hnh 14 19. JFET trong mch hnh 11 c VTH = 3 V, IDSS = 9 mA, v VA = V. Hy tm tt c cc gi tr in tr VG = 5V, ID = 4 mA, v VD = 11V. Gi s chn dng 0.05 mA chy qua mch chia p v VDD = 15V. 20. Mch hnh 12 c VTH = 5 V v IDSS = 10 mA.

a) Nu RD = 1 K, hy tm gi tr VDD cho JFET vn ch bo ha? b) Nu RD = 1 K, hy tm gi tr VDD cho JFET vn ch triode? c) Nu VDD =12V, hy tm gi tr RD cho JFET vn ch bo ha? d) Nu VDD=12V, hy tm gi tr RD cho JFET vn ch triode?

21. JFET trong hnh 13 c IDSS = 1mA v VTH = 4V. Cho trc VDD = VSS = 5V v RD= 0, hy tm ID v VS vi: a) IQ = 0.5mA; b) IQ = 2mA 22. JFET trong hnh 14 c IDSS = 0.25 mA v VTH = 2V. Bit VDD = VSS = 6V, hy tm im tnh Q cho JFET vi: a) RD = 0 v RS = 100 K; b) .RD = 0 v RS = 10 K; c) RD = 22 K v RS = 100 K. 23. Vi mch hnh 14, JFET c cc tham s VTH= 3.5 V, IDSS = 18 mA, v VA = V. Cho trc VDD = VSS = 15V, IQ = 8mA v RD= 0.8K, hy tm VDS. 24. Vi mch hnh 14, JFET c cc tham s VTH = 3 V, IDSS = 10 mA, v VA = V. Cho trc VDD = 12V v VSS = 0, ta mun mch hot ng nh ngun dng 5 mA th phi chn RS = ?. Khi c yu cu g vi RD? 25. Vi mch hnh 11 c R1=150K, R2=50K, RD=RS=2K, IDSS =4mA, VTH = 2V v VDD=12V. Hy tm

a) im tnh (VGSQ, IDQ) v h dn gm ca n. b) Tn s fT nu JFET c Cgs = 20pF v Cgd =5pF.

26. Cho trc N-JFET c IDSS = 10 mA v VTH = 4V v gi s in p vo VIN c ln < 0.1V. Thit k mch chia p (cc D c ni vi in tr 1K ln VIN v cc S c ni xung t) chnh c bng in p VGS v in ra VOUT = VDS.

a) Hy tm biu thc VOUT/VIN. b) C th chnh c VOUT/VIN = 0.5 khng? Gii thch.


27. Hy cho bit min hot ng ca N-EMOS c VTN = 0.4V nu ngi ta o c cc in th ti D, G v S so vi t trong cc trng hp sau:

a) VD = 2 V, VG = 0.7 V, v VS = 0.5 V b) VD = 0.5 V, VG = 1 V, v VS = 0.5 V c) VD = 2 V, VG = 1.5 V, v VS = 0.5 V

28. Hy cho bit min hot ng ca P-EMOS c VTP = 0.4V nu ngi ta o c cc in th ti D, G v S so vi t trong cc trng hp sau:

a) VD = 0 V, VG = 2 V, v VS = 2 V b) VD = 0.3 V, VG = 0 V, v VS = 1 V c) VD = 3 V, VG = 0.6 V, v VS = 2 V

29. Tnh ID v VDS ca N-EMOS trong hnh 15. Bit MOS c VTN = 1V v n ox WC L = 0.5 mA/V2.

Hnh 15 Hnh 16 Hnh 17 30. Tnh ID v VDS ca N-EMOS trong hnh 16. Khi EMOS c

a) VTN = 4 V v n oxWCL

= 2 mA/V2; b) VTN = 2 V v n ox WC L = 4 mA/V2.

31. Tnh ID v VDS ca N-EMOS trong hnh 17. Bit EMOS c VTN = 1V v n ox WC L = 0.5 mA/V2.

32. Tnh ID v VDS ca N-EMOS trong hnh 18. Bit EMOS c VTN = 1V v n ox WC L = 0.5 mA/V2.

Hnh 18 Hnh 19 Hnh 20 33. Mch hnh 19 c VDD = 10V, R1 = 800K, R2 = 500K, RD = 4K, RS = 1K v dng N-EMOS c VTN=1V, n ox

WCL

=100 A/V2 , v VA = 200V. Hy tnh im tnh Q (ID, VDS) v VGS ca N-EMOS ny (khi tnh IDQ ta tnh gn ng vi =1/VA=0) v tm cc tham s gm v in tr ra ro. 34. Xt mch hnh 20 vi vi=0, N-EMOS c VTN = 2V, n ox WC L = 0.5mA/V

2, ta mun c ID = 0.4mA khi phi phn cc VGG bng bao nhiu? Hy tm gii hn in tr ti ca mch ny cho MOSFET vn min bo ho vi VGG va c tm ra?


TD mt s cu hi trc nghim Cu 35: Hnh 21 vi N-EMOS c n ox WC L =1000A/V

2, VTN=0.7V, VG=5V v VD=0.2V. Mch cho dng in a) I = 840 A b) I = 800 A c) I = 760 A d) I = 720 A e) 4 S trn u sai Cu 36: Vi mch hnh 22, gi s =0, VTN=0.5V, n oxC = 2mA/V2, M1 vn min bo ha khi W/L c tr s a) > 4.5 b) 1.3 c) 5.2 d) 4.8 e) 4 S trn u sai Cu 37: Hnh 23 l mch gng dng in vi M1 v M2 c cc tham s: 1 22n ox n oxM MC C ; VTN,M1=VTN,M2; M1=M2=0. Mun c Ix=3Ibias th (W/L)M2/(W/L)M1 bng a) 4 b) 6 c) 3/2 d) 2/3 e) 4 S trn u sai Cu 38: Mch hnh 24 c R1=800K, R2=500K, RD=4K, RS=1K v dng N-EMOS c VTN=1V,

n oxWCL

=2mA/V2 , v VA=150V. MOSFET ny c gm (khi tnh IDQ cho =0) v in tr ra ro l (gm; ro) a) (3.5mS;94.3K) b) (3.2mS;80K) c) (2.85mS;53K) d) (2.52mS;94.34K) e) 4 S trn u sai

Hnh 21 Hnh 22 Hnh 23 Hnh 24 Cu 39: Mch gng dng in hnh 25 vi cc BJT c cng VBEQ = 0.7V, VA= , = 100 v c im cu to ging nhau, ch khc v din tch min pht ca Q2 gp 2 ln din tch min pht ca Q1. Gi s gi tr RL vn lm cho Q2 ch tch cc thun, VCC =3V v RREF =2.3K, khi dng qua RL l a) 1.91mA b) 1.96mA c) 2.01mA d) 2.06mA e) 4 S trn u sai Cu 40: Vi hnh 26, ngi ta o c cc in th VB = 4.3V v VC = 1V. T suy ra BJT ny c l a) 49 b) 50 c) 66 d) 70 e) 4 S trn u sai Cu 41: Hnh 27 vi R1=10K, R2=5K, RC =RE=1K, =100, VCC=15V v VBE=0.7V. BJT c tr s hie l a) 601 b) 621 c) 646 d) 692 e) 4 S trn u sai Cu 42: Hnh 27 vi R1=10K,R2=5K,RE=1K,=100,VCC=15V v VBE=0.7V. BJT vn tch cc thun khi RC: a) < 2255 b) < 2352 c) < 2453 d) < 2557 e) 4 S trn u sai Cu 43: Mch hnh 27 vi R1=10K, R2=5K, RC =RE=1K, =100, VCC=15V v VBE=0.7V. Nu BJT c Cbe=20pF v Cbc=5pF th tn s ct fT c tr s l a) 32.71MHz b) 30.15MHz c) 28.54MHz d) 26.49MHz e) 4 S trn u sai Cu 44: BJT trong hnh 28 c phn cc ch a) Tt b) Tch cc ngc c) Tch cc thun d) Bo ha e) 4 S trn u sai Cu 45: Mch khuch i hnh 29 dng BJT c VBEQ=0.7V. Ngi ta chn tr s R1 v R2 sao cho VCE=3V v IC=1.5mA khi =150. Nu =200 th im tnh DC mi l (VCE; IC) a) (1V; 2.5mA) b) (2.5V; 2mA) c) (2V; 2mA) d) (2V; 2.5mA) e) 4 S trn u sai


Hnh 25 Hnh 26 Hnh 27 Hnh 28 Hnh 29

Cu 46: Vi hnh 30 c RL = 2K, JFET c phn cc min bo ha th VDD ti thiu bng a) 11 V b) 9 V c) 7 V d) 5 V e) 4 S trn u sai Cu 47: Vi hnh 31 c R1=140K, R2=60K, RD=2.7K, RS=2K, IDSS=8mA, VTH = 4V v VDD=20V; JFET ny lm vic vi im tnh (VGSQ, IDQ) c tr xp x l a) (-0.8V; 2.65mA) b) (-1.30V; 3.65mA) c) (-1.70V; 4.7mA) d) (-1.5V; 3.68mA) e) 4 S trn u sai Cu 48: Cng s liu vi cu trn th JFET trong mch ny c tn s ct fT l (bit Cgs=20pF v Cgd=2pF) a) 25.08MHz b) 22.17MHz c) 21.34MHz d) 19.54MHz e) 4 S trn u sai Cu 49: Xt hnh 32, JFET c cc tham s VTH = 3.5 V, IDSS = 18 mA, v VA = V. Khi VDS c gi tr l a) 7.43 V b) 8.6 V c) 1.17 V d) 1.17 V e) 4 S trn u sai Cu 50: JFET trong hnh 33 (c R= 1K, IDSS=20mA v VTH = 4V) c dng lm in tr c iu khin bng p, ta mun c t l chia p Vout/Vin = 1/5 th phi phn cc JFET vi VGS l a) 1.2 V b) 1.6 V c) 2.0 V d) 2.4 V e) 4 S trn u sai

IDSS = 2mA VTH = 3V

Hnh 30 Hnh 31 Hnh 32 Hnh 33

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DCBD Bai Tap on Thi AY1112 S1