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5%831& *El E A % fi$ P. K. Chu
Wei Ronghua
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(City University of Hong Kong) [9 S] (SWRI) [8.2-8-6 R]
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T$E%k!E%jf$~&T67~&5~4 7 f 7 7 9 7 . l- 7 7 ZT C V D + & ~ E ~ ' ~ X T L ~ ~
473"6 '$~h;kT1.16 . H$$ ( Z t T C r f : & t ~ Si 3 r - j \ ) tz RFZE+EPBUL,
2&$$t7°7X.~BBFjt~tF3&?Pkl b-~X:Ej%ZE&ifJnk,b t t $+ l JMLT4 $2
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6 Z 2 6 ' 9 ( , 4 zf2mZ$26>h&fiCf&t:4 z f> m E & l $ + ~ j q x y 9$hR+@ #kLT1.16.
&fi, d; Y)?,~@B~CZ~;~~%%HT~W@~~'>&H$?&V->->;~,B. ~ ; k I r f : ~ T
z7 4 % >&A (Plasma-Based Ion Implantation, PBII) S+ KMT 6 b m T ,
SO1 (Silicon On Insulator) +7"7 x-;l F - I5 2 Y (Plasma Doping), l- k 2
4 b+- Y 2 3" 3 7: C;I%%.E/J HO&fF$IJ!JIC: k b &3%%-& (shallow junction) Q
Y-mi i$ rHf~~qQ&Th kl. PBII Irf:&3RO Y-A 7 4 > Z3C: d: 6 -&A&fl?C:~c trf:
Q L . $ ~ $ + b 6, 4%%OGS25kf l j t LTfy l$+&A3 1.1. $STCrf:, P B I I S m
+~@-mj&MLz-?LaT&<&. 3 7:, +%@-.O&Hp*,?, qqQO$&$+&FJ!
K & T 6 iB3t7'7 X . 7 4 % 2S.A (DC-PBII) &I: M E T 6 b $EfiT6.
7 O 7 4 $2 &A (PBII) &IAgz@&flf@g ?& & : 2 , ,&A b+- Xs
jS'&l.lt t , B $ $ O k 3 ILiMi%Q ( & B T 3 QQYO$+&+&L, &;$t L T
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) (4 TKZE Ikvl
B9.1 PBII 8 + l J H L f i ~ 2 ~ 2 ~ ~ ~ @ f i H f ~ @ ~ a 6 4 7 3 ' ~ s \ ( F - X g - 1 T 4 7 x t R )
h a . I Z ~ ~ L T , t i ~ ~ 7 " ~ + x + m 3 2 9 : (mg) p g i f 6 e h 7 + i g @ 7 0 ~ + z t : % b ~ T F E S E j Z f l & Z h 2 b 3 k < K7°u+?,S%@m$7j'Ht L . T Z % +
7 / ~ : - 9 ~ \ t ' i f b Z t b 4 G T h 6 . +2$$4i%faPtz;h'tf5 P B I I 7 ' u + z @ P -7:s-.&A~.$-/kF-mM($t L T B 9.17)x8) t~ 3 @,~.$-~ky-$j&!it: %If67"7K: '3 P-Y23't;t-tf-7': 3~ ;/mR$2D&A&k.G$,8>1/ 3 > r f r -)\+&3$LI:'), 7 7 . 7 I-74 ~ 7 ~ 1 / 4 ) * $ - / / ~ m f z h m R B S f ~ Y ~ S X ~ J
(Thin Film Transister, TFT) m%El: t 7 T&S!-Ch 6. Z D % b , 7'7 X' ~ - ~ . , ~ t r f . P-X'B ~ ~ h . 8 b . L ..- t;S"EX2tL5bT5', . & A % & ~ 7 ' ~ 7 7 4 /kt:
7b3Tkk?tLiTYZETkk2b3. L fz f l 7 -2 , L34b332{a@Lm482??%-&, @ - ~ x . + / L Y - ~ ~ Y & A ~ S ~ > ~ L ~ P B I I ~ & ~ Z t 77% itL2-t>!33Y+m&
83d2+!3~$~T;b i 6. Iz t 2. If , V 7 " 100 nm 3 3 x m p+/n $$F&~irt-kfl 9 t *6t:i2&&j&m7=-]/ > Y'&B;S"k '1 ZZTh 7 T , & 3 $ ' d ~ ~ ~ & D ~ F $ ~ ~ ( P-)+ i- m w ; t j ~ ~ + m 7 ~ n 7 7 4 /LIZ 12 + A Z ~ T L 2 b 3 9 ) , 1 0 ) . 707
X3?R1:$?3 f :63Fi%fi~%Th 6 7 Y XiE3-+7k%E3-m k i 2&!3%l2&A?&
tz47htL6 7-- 11 2 T~t:%b>T$$*4mTs*b>t:+k%L, s ~ m * r>%k*&D
T , ERBqC: I2B6lBIt S r, QLl. +%,esm> I / 3 ~ * ~ # $ ~ D I Z ~ ~ E $ X " P ~ S ~ T ? " & 6 > I / V 4 P-m P-)q> l- m&Cih++,&&> I / 3 Y TFT +mA%%Bum-& A 7 " u 7 7 4 /kt2?tLbT F & E T h 54 ,Z I28b3 .
P- XB$B&?"t2, SOI")-17), Si-Ge-C &&la) D k < 2$4-$$&&B:'3 4 9
&E@fLq!J+Sif& (MOS) b ~ > Y X ~ L Z % L $ ~ @ ~ ~ O Y - X / F P - > ~ &
(<lo0 nm) C&@%a% ( a+F&l: b: Y) && 2 h7 ba b. pi/n ;f&bC&i&r ;i. /I/
Y- ( 5 5 k e V ) , 7% F-X'E (210'9atoms/m2) n B F z i 2 & A L 7 % & 2 h
b. t m * 3 6 , 5 T 2 a - f - v $ ]I 2 Y g T 3 b1fG$/J\I < Tb1:hC:%ET;k,b
& $ $ 2 h h i P L h 7 3 / b 7 7 X f L T b . L h > L , @%OY-L- \75 > i z b : b 5 T
2 .&h~~⇔s mEL: b: bkZRa5 T 2 Y-AO!k&CkT3 2 b 1 1 : h 7 k g L a 3 % E 9 '1 3 ?Ed') hQbaC&> ]I V 5 FEL: I;'-)<> b 2I&,%L, %PcB(J4+HC: b:
'3 ~ $ $ i + J l ~ i E ~ ? " b ~ Q ~ ~ ' - ~ " . 3 1;, @ % a Y-A 7 5 > ~ $ $ ~ ~ k ~ q @ F- L=D> (molecular layer doping) t L 7 b JH ba h h-L-11.a b 28)-30). I. 3 9 T P -Y
PBII (GILD) 9 1/ -V F- tO > 7 (P-GILD) 32)-34) 1; b: Q + x & &m 3 h7b.b .
9.2.1 PBII i& lZ & QI33ZS-f; PBII &I: b: b@j3%61: I&k3 2%?$;5'%-@ h h 7 b a b. ft7" 100 nm a p+/
n 9 n'/p a;f&&R$&h*(&~$ /by- PBII &h: b: -3 7qTh h1z35)-37). & A S E
@i&baZ 2 ( < I kV), &%a5 T 2 & h t B 2 Y) Y - L - \ a g % h f ( & ~ % J ~ Y -
L T BF2 7'7 X'? %H b a I z k ! & a @ & % 2 12 SIMS (Secondary Ion Mass
Spectroscopy, 1x4 iS yBB9tFi&) C: L b 7RllllZa%R, ? h FR, 9 .2
& 3) dislocation loop Fd--bx v ) EkCz o> 7 f:SdRa>&8. ,K%j#,9!%a>--%. ~& 4) stacking fault E!ika>jp%f-kB&a>-S. g55) y d f - p a > = mE~%%,l?kLi-%? I: I = I ~ { e x p ( e V / n k T ) -1) ( V : ZE, I : EEE, I0 : X ~ ~ ~ ~ t I ~ E ~ ~ E , T : YEE, e : EEf-az$7, k : jK-lLY-?>~&) T"5 S & 8 . &+a) njSsT4 A-- Pl%BL-aelfn, 3% 1 tr z a>r~ya>!$% tr 8.
130nmd2LSSB2B (4*4%@,E) 1 : k ~ T F $ 3 r l = I h B I E k v) &k3~ , . t&C2
& A 4 % 7 ~ 7 l B 4 T , @ t B "knock on" 7"n+zC:kBlzM>?"&B. & j z , S o
70%4iC2@3ka SUPREM > S 3 1/-5 3 738' ?"?#[=I hlz IE* & bTh.1:
Y h B t t I:&&hfd%?T&B. t hC2, PBII 7 'o+;i1:%b>T~2'/( %77Y7'
7x?>-;i+C:gLlT+Jl*$39tggL, 4 % > 0 s . * j b ~ - 3 ? 4 i h ~ . ~ 7 Y B l z
M>?"&B t%k&hb39 ' . @Xmat%- , l4d23F%Iik~- l t t &/T;I&l:. B F 2 7
~ X ? C : % ~ ; L T ) P / I ~ ; ~ Z E - - ~ . ~ ~ V , P - ~ ~ 2 ~ 1 0 ~ ~ a t o m s / r n ~ ~ ~ 1 + 7 ; ? "
@B!Llz~&&, 5- 1. d2 140n/sq. ?"&I 9 , ? a # Z @ G S C 2 2.4% ?"&
7 l:.
PMOS 7 " ~ +;i-a7"7 X? P- Y 7 l"aijj$&J143,@C2 10 +uk & Kl:;iTk,
hlz4O). p M O S 7 ° 0 + ; i C ; t & / l \ a 7 Y 4 7 ? f & 2 , u m , Y- 1. @?/[L@a@=I
6 5 n r n T h B . BF3-PBII&C2, p + ' / - ; i / P 1 / - i & k P p + 3 % ~ > I ) 2 7
Y- 1. t i P-7"$Bl:M>G:H~l&hlz. * & 2 h l z 1. 7 2 Y ; i Y a - t f 7 ; i 1 / . y 5
3 J b P ; i 4 2?"7'C266rnV/decade?"&~lz. f l ; i % k k B @ 7 " 7 X ? P-Y
2 ? % H b l T , p M O S 4 7 ) . ; ' - Y % k k p M O S NORHIE$%l+&L, Y J & ~ ~ L
1: 0.17pm pMOSFET 7 ) < 4 ; i a ~ ~ B ~ $ ~ ' l & t : ~ b ~ T @ ~ $ ~ & j z ~ ~ ) . 7 ' 7 K . 3
p- Y - 1 ?"?"C2, 7JcX9- 1) rf A t \ k k i $ % i Z % & h', B4B t 2 B
%2Ri2&B42 f i T L l 2 b l . 7': t L l f , 7-7 X?%&% L v@%nX&1: k B%&
913d233IU093f .; ;r\ I L P ~ R " ~ ' %/T; L, 0 .17pm a PMOS o> L 3 b l I E E E I 2
-0 .3V T & B .
9-2.2 BF3/SiF4 1: & 5 PBII $%
p'/n%&% PBII&C:k v)Lk&$B%$&, S m 7 ? E t LTBF3?f ; i7Yk < $ll H 2 h B . t h C 2 ~ Z L W T S ' I ! ~ ~ Y / J \ ~ ~ll:M>?"hB. L f i L 2 7 Y & BF3 %
kkSiF47"7x?+l i&G$BEE@alzM,Y- ' I '~~ 1. ~ 1 ~ . 3 ~ 4 7 ? t B $ $ k
?"aiB$,%hr&A770+xaBdC:ms$li@t 6. 7 ° ~ + ; i C i E L T C 2 t h & a E j Z
i:&s$Bd,%7Y&I 6. = % Y 47 Y~t#$,%ams7Y&G$ B % & a s R a R 2 %
& 6) 9- b IEK iETfR5BWa-iL!+ t>jtrl.iB $ ?+azz$&K. & 7) subthreshold swing F k 4 2 zjz%-fi&jbj- 6 a b:&,Ee y.- ) z % . &8) %4-r<, i .~3bR Y - ) ~ % ~ i . ( 6 t t - ) ~ ~ h c O V a I : ~ ~ & y - ; : t Pk-2aB~7czz$%hP%%~+j-< j d Q Z t .
1 0 2 3 b ~ , ~ ~ , ~ . , ~ , ~ ~ ~ , ~ ~ ' 20 40 60
b$f%i@+rjDi%2 Inm!
H9-4 SIMSTiRU81;kfi%3%%2 7 ~~%~'lZhf f%
&, TRIM 1: 1 '1 zg 2 k~f:F%Ja>%42 R, Ci 0.01 ,urn (0=0.005 /Im) T h Q44),45). ~ t ~ a > ~ 7 ~ ~ 7 ~ ~ C i O . O l n r n T h '1, So' / F - X ~ I ~ - & A B % I ? ' ~ ~ %
C: 2 j'\.. -il 2 .1 x 10'' atoms-m-2 T%$U$Q. E t~Cijlq?!Z!$I t 1 < --a$&. .kg 2 7 , 9 3 ~ ~ ~ 1 ' 1 2 - ' - B $ ? % Z $ . t t
Tdi , &A7-o 7 7 4 1bdi+'@kMBB(1Th Q t t jS%hiSl Q . 'EYibC: 1 Q ZtgCL
&$a$ QigI6l P%$,a'dig,%1B%1 { %N$Q jS', %B$Ba?a>&AB$B~'lI~gbl-ilCi
%,%lEt h & '1 kj'\..--&@&2b>.
S I M S I Z ~ Q S D ' / + & ~ > ~ ~ B ~ @ R % ~ ~ - ~ C Z Z $ . 1 1 ~ X , F a > S ~ > d i
5 nm L.-Fa>i3\.lR2 Cz Y- 5' % G 6, 10 nm $ZEa>$EBC:!3&$b. t W3&
C ~ L ~ : , ~ ~ Y ~ " ~ + X I : @ ~ $ Q ~ C ~ ~ J & ~ S ~ T ~ B . F-iT;'Sa$,*g@di7°~+
x@BB'JC:$$L~&#BB(~TC~~ { , %$Ua>!#I?kBZ$. %%&h7: F-X.~-B$BB?~>
f%i%Ci, -@8(11~, & A 7 " ~ 7 7 4 ibjScflrfZ%&% L-ilb.6 t L - i l M b l b t t &'T3 6.
9 I1 3 >%ma>= >:, 9-2 ?~Ii@i3%6a>89&IZ33& L b l % R B G 7: &$ G a> t z ~ ~ 2 h a - h ~ ~ ~i121.1. ~ h i ~ l ~ ~ j s s b , F V - ' / + B ~ C ~ ~ ~ J A > I ~ I Y ~ > Y - -
ba>4@,a>722Cz8%&2k~, ?a>%3bifi8(12R2II-r~:,42PR2 t&A-@2a>$Uk
L 7 % 2 h Q . ta>.LjZc%;$k '1, @ ~ ~ @ & C Z S ~ ~ ~ B , H ~ ~ > L ~ Z ~ R & % G 7: & 2 2 b . 7 Y . x %83blQ t t j ~ ~ f i $ & h ~ i G i F ~ h ~ h Q .
9.2-3 ;rk%W#!i &H L\ b F - t=" 2 Y 7kX%+hr BzH6, PH3, A S H ~ ~ J ' X % J + ~ \ . \ I ~ ) < / L ~ > 1) 3 2 , iKl) > 1) 3 2 ,
& 4 L > l ) 3 2 a 7 k % I : k & x * y # 2 7 k - l-;Sq$$z$2fiIz46)-48). BEE,<)bZ %EPfJ~L2\ . . i&+lzCr t+~7a$$R' t tz~\ .~7x~r 4 2 7 k - l- I r t O.5nm/minU
T T & '1, S$$a?EElz%M1%T& b. L;S. L, S$$l :BZE)~)b~ 9 EpfJu L Iz
i&&ax~r#27k-l-Crt@EPfJUa%+k '1&< 2 ' 1 , 3 2 , ? E E a % D U t t G
I ~ h 3 < 2 6 (H 9.5). 7kXagSIrt/J\2 \..a?, Z ) < b y 9 1) 2 T;SSx %y 42 T a + R m T I r t 2 < , 7k%7Yfi )bI :kaEE1K4L%x>?#77t%2hf ia . + 2 b G ,
Si + 4 H - SiH4(gas)
Si02 + 4 H - SiH4 (gas) + Oz
Th a. 7 k S K k h x ~ y # 2 7 ~ h r t @ j % ~ + a @ ~ t & A p - x s g @ k &Ff1%9 &T.
p-Z- " E D ( t ) Irt*&k42) l i k ' 1 > S x k - - > 3 2 2 f i 7 \ . . & .
D ( t ) = ( k+ l )Nd- sZ (k- n + l ) N [ns] (9.1)
Z Z T , k=vt/s, v : x s r # 2 7 k - l-, t : B$Fa7, s : j#$$aZ;i~r7"E,
Nd p-x27?h 6. ?f i?f iaB%%qI~&3\. .774? 5 %r 3 >-Z €?)bhz k
'1Zt$$2 hb49'-53'. N h s I h r t x ~ 4 2 T 9 % $ 3 L I z t 3 a f J ' 3 ~ ? 2 a & A 7 ~ u
7 7 4 ) b T & 23. El 9.6 hrt7kS F - X ' S ~ B $ F ~ ~ @ ~ L % Z ~ ~ Z , % % T ~ 23. 7k%
PBII qa7kX F - X ' E ~ $ , ~ S ~ E I ~ ~ B $ F = ~ I Z ~ $ L ~ ~ # ~ $ ~ % T & '1, D$Fa7a@i&t t G
I I I
20 40 60 80
?%A% W Iminl
H 9.6 PBII @ ~ ~ @ ~ 7 b ~ ~ T Q 7 f c % F-~~a>4!f@lk
77.7 2 7 " ~ 4 . \ " ; r \ ~ L h ~ & h ' \ . 3 7 I k , J € 1 1 / 7 ~ X ' i 1 J a > (amor-
phous silicon, a-Si) T F T & & a f z M > a ' l - ~ / P L - - > ~ p - Y > T & L ( 12
L 3 \.lli&a%iEG: PBII .&;-jSsH b l b it 6. PBII & a E F ! C k & b l ~ 1b-7"y b t y- b mh%I:33Tb S/D$BWaEl;I12S&-@Thb. % R t L - C 7 ° 0 t 2 2 & a
]&$t&bl4 ~ - Y & ~ g ~ ~ b f z h a Y ~ t ~ ~ ~ ~ ~ : $ $ T b Y - \ a & & g j y <
t 1:75'T3b.
%,EE 'i IJ 2 2 (polycrystalline silicon, poly-Si) TFT 1 k 7 / $ 4 2$.f-.l%a 3:
3 2. b 7 7 :, b .\"S 1b?%s8, 7 4 2 7'1/ 4 (AMLCD) a 3 9 7 T H & it b a-Si
1 ~ 1 Y b b 7 / $ 4 2 t L75,Ljd;-jSCh, poly-Si T F T T l k
$&&$$Fh: 6 %F b 7 .y 7-1: b 7 .:, 7°aj%F& I: 3: "I 11%$jkj5s$9(L-;5 b EdZ.hC&
b. 2 , p o ~ - S i h : 4 : b b $ , & k l L b . b 7 . 7
7-j&&afzM>h~7k%i: d: & / q y 34-9 3 > f l & $ h Q + f g ~ h 6 : t j~hi$j??
Iz. ? Oi&4?, TFT ?? AC I: 3: 6 T%ST*fiZ@C: 3: Y) && 2 it b 7"? X T ~ ~ ' - ~ ~ )
~ ~ , Q \ . ~ C ~ E C R ~ " ? X T + ~ : ~ E ( t t 1 : ~ 9 . * ~ 7 > < - > s ; . g j 7 < j?;-jS<T$
663'-65'. L + L Q f l h , AC 7O-f X ~ T t k 4 f2EEfllff; ( 7k$lLhzCk+ (
94.5 86.3
135.4 8.3 --
TFT --
0.88 0.31
56.1
-109.1 -36.8 1 5 . 8
p-channel
p~7h'&3??hb. --3, E C R 7 ' 7 ' X ~ ? i ; f ; > - i : ~ ~ ' / > ?/b;hfE[EIk;tb-sT
9--Si'%r l--m7k%4 ifiS%;5'1&( 2 ' 1 , 7"u-ki:l$P~7jSfE( 26. U - k m d 6 h ' & % L T b ~ ~ ~ b z E G $ E l l B n j - b PBIISiL&bl F - X k - b $%
T b 7 ~ ~ h Z c & ~ , m 7 ~ 7 ' X T $ H b ~ 7 ' : / ' ~ ~ ><-9 3 >mfi@&j$ik L T g g ? h b66',67'. n 3 . c + / b % k V p fk-~ ;T: /bm7/ '4 i:+S1I&l;f; 3 0 9 n PBII 7 " u - k ~
t:k '1 L@P&6. @*a, A C 7 " 7 7 : ~ m ~ ~ & h : I A O % m + ~ I % $ f S b m t ~ 8 @;;7
$ZL7\ .17z . 5 9 . 1 t;f; nfk.c;T:/b%Ldrpfk~S~bTFTmTj;iF*EAC7"7 (8 D$BB~), ECR 7" -5. X T (80 53) % h' d: PBII (30 9 , 4 kHz, - 6 kV)
3 ~ ~ f s r & P R ! ? , L 7 ~ 7 / ' l ' Z (50pmX50 ,urn) mZi?%f39$4.I'% (%@i~E,u~ff ,
%&z% IL, if ; -if 7 B$n%?RkL Ion/Ioff, L baI'ElEE Kt,, % k V V 7 - z b
kr > 3 / b ~ 2 ~ - 7 " ~ ) ) ~ $ ~ [ ] ~ , $ & & . s 9 - 1 k 54-93
; t :kb$$'I '%a>Zk%hrf lAr>6~fhbZkh%h~b. Lh 'L , PBII&Tl;l:7"u-k
i:@B,'lmk$Efb%G&%-hlk3 jbY+&f2k)Q. PBII t ~ % i ? b / P , ~ 94-5 3 i f l $ p ~ 7 i&7°-5. X T $ ~ 4 if > @ B m s k @ ( - 2 . 5 ~ 1 0 ~ ~ ~ r - ~ ) 2 ~ ~ ~ / f / b + f - - ~ ~
i$%fJk q & & b . ~ ' / b V - - l ~ % h - ~ b @ ' 1 & L ~ ~ f i ~ ~ 1 5 k H z ~ ~ & ~ , 7"u-k
x%VB71& 5 5 ? h '1, b+--i='Zt;f; 2 . 0 ~ 1 0 ' ~ a t ~ r n s - r n ~ ~ s e c - ~ ?"h b. F - X Z a
& 9) subthreshold slope b 7 7 2 2 3'0% 7/% 7 m.M 9 @,?o)%EE2%-6R@E.
3 3 ~ 4 & i I 9 - ~ % 7 f- EJETm4 fym+,Ei*I~k '1&3 b6'). 3 f:, 6 % S $ $ O k
< 2 @ & @ k T T ) S 4 7. ??&&$b$%&, Z!zfim%$,BCIT)~,', xm+G!iB?? b 7: &
-f. Zaki2BdlBQB&$Q--9~Z&GI)p/b~Oi??B<-fb~rErThb.
PBII &1z k b7lkXIL1: % L.7, Bk#3 r .:, 7'E$jS1& S r % 1b-a>+E%-F)*II/
~ , ~ E P ~ J D ~ z # < ~ 7 3 ~ ~ @ i C ; t ~ * / b V - ~ ~ j J ~ E 1 ~ k 7 T&%!$? kL b EiFTh '1, > . " / b x a L '1 2% L,R~&%Cf fXII%h'2~1. t;kTl&*XILC:E-f b B%Bdl;t 30
3 3 2 ~ b 5/;j-C~ 3 TBiB2 kLT% 9 , PBII &jSS?%%$A > IJ Y 2 TFT $$#m7"n
-ki:l:k ' 1L l7?<%'52OF@t L T B 4 3 2 k L b k < CzO77I .xb .
PBII&C:k 6 ) < > 7 > 4 - > 3 >I&., @ 5 + 5 + & k i ; t ~ 2 6 % h = X . & ~ O k < T
h b6". +E%1: k '1 %f%lLS r ;j, 1bjSS&&2 h b , 6 i ; t @ % F & T h 6 AC 7'7 X~
T, E C R 7 " 7 X ~ h Q ~ ~ C ; t P B 1 1 7 " n + i : T & f l L T h b . l O k e V m r + / b + "
-?? b ? H f 4 ~ ' / j S ~ ~ i 0 ~ 1 : @ ' . 2 ~ h ~ & ~ ~ ~ ~ 2 ~ & 1 5 0 n m ~ ~ ~ T h b6". 700nm cOB2 2 b 9 SiOz 3 r ) 9 > 9 Y - I- &fL@, +,%& > 11 2 2 Y-
f - 3 r ~ 7 ' T - f-@IL@1:$$LT, -6kVaEPjJ~TG;t4f>mE%i2h'1 22 ~ 1 . LjS'LOjSf&, PBII&l:kQ7lk%t&@%+&kft;~-ilk'1+<+E%-fb.
r kLi;t+$%jsr@EEc~ k '1&& 6 7 z & j ~ h 6.
9 h '1 , SO1 (Silicon On Insulator) $$&GIE%m > 11 7 7 &$$CZ GI 2 <
--
& lo) latch-up CMOS I- 7 ;. P 9 a> 3 -rjb, Si &+E, n+ +E%J$$, pf +ERE C Z dr 9 %f&S it 6 npn, pnp @& ( 3 & ) ( 4 rf;"- 7 l- 7 7 Y i: 9) fl, ~ j ~ + J . $ ! f ~ ~ T h ' h a>%E?CZ L !I % 7:K% 2 2 9 , ZYE 2 @i&a>r~7bZAZEflj%h6%&. 7 ,y 97 >y 7" fl%.Lkt 6 2, Si S-B2#22 YjS'BCf ~ L, XTjS'B@S h6. & 11) short-channel effect Y- l- 56fB ( 2 6 2 Y -- I- ZEflo V T & - i: 1: FI/->a>r~7CzzRh~$%fi+t < 26 z 2 . ?& 12) punch-through Y- l- Ti%l)@lT3 Q~a&+f iZZ?%f lAg~z$%, f~ -~ L 3 $ j& T, Y- l- EjS'B < 2 6 12 ?EB%hZ 2 6.
9-4-1 SO1 IC 9 L \ T s o 1 9 r - / \%tFB t%@jC~ 12 9 < aB&Eu&hch 6. +<7a s o 1 %ziC~?kSl
L 7 $ & f> kLB *2fft@jC;t SIMOX (Separation by IMplantation of Oxygen),
9 r --/\a S y 7'4 7 3"h 6 b l CL BESOI (Back-Etched SOI) , Smart-CutTM
Th 6. SIMOX C k 4 & 3 2 1 hT&bl. L&Ck > 1) 3 7 9 ~ - - / \ ( ; + + 2 * . -X
3o>&XB&A+Bfz&t,~Eblfl$~sEJjS'G~STh B Z t CZBHTQ. + a R R f 7 & aL/,l;t= ~&$~~+~ak$bl4$2&Agg%HblB~tThQ@, **!EL Z~~ZI-752
$ b & 5 7 8 b l Z tjS'pD7BThB73)374). + Z T , d&I-$.lbY-, {I5 I---xa SIMOX hi'-E%3 ; k f ~ ~ ~ ' . t ;kl;t, FDFET (Fully Depleted Field Effect Tran-
sistor) tZ&DH#$'kjS 'h 9 , i & Z A r k 5' I- ~ = . ~ Z ~ ~ H I Z ~ Z ! T ~ B .
3 fz, PBII &TtL 9 r --/ \nk$St~ Mi% 8 < SIMOX t @+ SO1 6 16 3 Z 1- CZ 7 *&+ 6 L t 7F-T $ 6 11)-17).
904.2 SPIMOX SPIMOX (Separation by Plasma IMplantation of Oxygen) 7'o -k 2 TC;t
@%h'> 'I 3 > 9 r - / \ m C ~ PBII&CZ k 9 & A S & & . 3r--/\C;t@X-P7X ?+CzZjS>;k, $3/<4 7 z h 2 h ' t f f>kLB. E E S % l 3 a E h % i & < L 7 4 $ > a
T f 9 B & % 7 $ 2 % 4 $ 2 > - Z E k "IG< T B 2 , l f i a 4 $ y a % & , EPBuZE @+a 3 3 4 $ ~ ~ & A L + ) L Y - t 26 . ++Q&A~,; k "I @gj~ '33%+n*~~)
(PBII) 9 x - I \ -\ (~~~ 5, 7 ) 3 2 )
6 i,a 1 1 1 o a ad a r a a o o * o b a , &%P*% 0% 0 0 Oa.daQ &"ad d o
- v
9.7 SPIMOX 7 " ~ +X a)%ll
(buried oxide layer) ;3'%& 2 k~ b 76'-78'. SPIMOX 7'0 + 2 a&,g + IZj 9.7 12
P~i@%h72 &b!RlT&j 25. 9 =-/\a P- X f : 1 x loz2 atoms/m2
9 4 x 7 F k 3 < 2 Q C z 9 h - C PBII + Ji3L.Q k-&As$B~qh'@j?tr 1kT-C L '7%&72tLb. ZtLIL9=-/\Qfibz 5 - 4 ; 5 2 7 F l d @ C z $ k A 2 h Q I ~ M , T & j 20
'7, @ j ? O F - ~ 7 4 > z 3 t a k < 2 2 2 + . ( . = . 2 3 " a @ ~ + @ j b b ~ I : M , T $ j
b . @% F- 2s + 2 x 10'' atorns/mz
k T a a c = G z 2 1 1 $ r ~ 7 c L & 3 5 T h
9, P B I I & C L / ~ * Y + @ B T C L ~ ~ ~ @ 6 8 12 3r-1\. t f4 X [inch)
i % % ~ - Z & G h 3F% t z B f 7 8 5 T & j H 9 -8 1 x loz2 atoms/m2 O*X P- K
6. k:+3Z&?$AB+tidDkB
SPIMOX rf~--/\G:fF$&? tLhfi@4b@c~@357"~ 7 7 4 /be7-- 1 ) '/?a Tjijf&Ti#lZ L 1~RSfid e 9.9 I:%$. -&Am& eqT-r, 1: rf 1 - - / \ ~ l & Ozf 1:
W 6 $ 6 Y- 3 l L - - ~ ~ f i C Q & T & 6. 1325°C T 3 @ ~ B Y C Q ~ - - - / L ~ ~ T ; ~ i 2 1: k u) BOXBflfF3&2;k, { b ~ ~ ~ & I $ C L r f ~ - / \ ~ ~ l ~ f F 3 & 2 f i & / < ~ ~ 94-3
9-10 SPIMOX 7'~ T%& ;kf< SO1 XTEM @%$%5g
3>@fL@af&&tmL?i .#56 . 7 ~ - 1 l / T 6 L t C ~ k 9 r f r - ) \ I ~ d k & b l > ' I
7 > / @ ~ L % Q I % % ~ S ~ R R ~ . 7---1L$&a SPIMOX a XTEM b%Eil&+!Xi 9-
1 0 1 z Z T . &%b9?'TB2BOXRfl%%ESiEaT;gBl:%&Sh, E F k d I ~ T Si ~ / @ f L @ ~ ~ F j @ 2 % % f l ~ ~ @ ~ P , TEM %BIZ k 9 Zgh h h 6. L a t L 12 SPIMOX hi PBII &I: k 9 $ 3 < Tih h f z Z L + ST.
904.3 S P I M O X X 7 - bi9.y b T M / 4 $ > i 9 - y b 4 if > A .Y b (ion cut) &flJC2 X7- b fi s b TM t % U+Cfh, 8% SO1 rf ;L
-)\jsi?k&S dz.679',80'. 4 ;jf > & %y \ + Aa.&A?,7 ~y 7OIk S O I @ & B l
$Fa> I/ 7 >1:t$-QE&.2%2, &fk@a$&ftg&g"'4' t rf ~ - - ) \ r f ; > - f " d > 7.I: k 7 T & & ! I ~ T - @ ' ~ ? ~ ~ ~ ~ ~ ~ L ~ < BOX @ 9 &*. 7 ' ~ + A I 2 R 9-11 I: - XKT k $ I: 2 9 a ) q I l / 9 11 3 >-a$&@lLEQlR9&h~ h $63 6 ( H (a) ) . 9
b l T 7 k 3 2 > l I x > r f r - ) \ ~ - x I ~ & A $ 6 ( B (b)). . & A S R f z r f L - ) \
2 % $--9a>lI ~ > r f r - ) \ L @ % L , 4 0 0 - 6 0 O " C ~ ~ E ~ I ; k 9 7---)i/T 6 ( B (c)). 7=-ll/qI~19a9 r-) \Ck7k3js i&AS dz.I:<$j4&1~%7 71
91:9%!!3h7 - 3 a 9 r - ) \ h i S O I % 9 k $ I:26 ( H (d)) .
. f r - ) \ a % t % " 1 5 ' 1 2 4 ; j f ~ & ~ ~ ~ ~ ~ + Z A + ~ ~ & ~ ~ ~ ~ A \ k ~ 2 5 2 6 k
( a 1 @4L@Bi ( c ) ? ~ - / \ $ > y - , f 77
( b ) lfcX PBII ( d ) 4 ; 5 7 f i r F
& 14) $6&F%@-> 7z&Ei@fL@Ba> t t %%'if. $E 15) cleavage EFPm7a>%6b%lb"/J\I 1.1 t t jS.1;Y k 6, %8esa>%ZZ@1Cz%-> fz %on.
7z&, W b$Zb&5%-S6 t S@;fr3$%LT$&T-$b. &%t L 7 , E%h'gIz/J\P.
Q%rlkLEl2*b. 7k% PBII 4 f 2 7 O ~ -k7-,TIk Ht, Hzt, H3+ @ldB$I~'&h? kL, R Q 6 R ?
Cz%b~-C%M;fr1+6fij~G LkLkb\hi, ;ikXflxkA, 77X-5'1'4RZL1, @&XU) 3%C~d: 9 , Hz+ bbb-)/kH3+ + + 2 ~ i i : 7 \ ~ t - 5 b 7 k ~ 7 7 Y 7 x ~ ~ ; f r & & - b b L 2 eT?. b. ~ B + I Z , 31-/\o>i%E2 250°C UTk$b k&AA%4 f 2 S D
+fi%@fQk bkL, &AU)BH?, Wo>%3&@G 7: b ?f ib .
H9-14 &%PBII/4;5;/75 .r/ bC:b; d%bkS?Lfi Si/SiOa/Si #SO Si O XTEM Ef%&%%B
50 kV T-&Afl dz7:V27'/bO SIMS 07.0 7 7 4 ~beo 9-13 I:%$. Z Z
T I 2 7 k S F-X.- 95% DkjSsHz+ T h 9 , H + I2 5% U T T h 6. & 7:)
Hs+ C2CS t A, P&$!fl flab>. SIMS 7 7 4 /b1:&blT7kSfi Y-? 1 2 1 9
BM,&dz, T R I M 9 2 1 ~ k 6 > : 1 1 / - > s ? O $ % A t k <-$2+k . TRIM92
> I 1/ - > 3 2 T i 2 50 kV njJu&~S /bF--T&A L 7: Hz+ 2 H+ OjWE12,
+fL?dz296nm t 493nm tZt$$fldzl:. 7 k % P B I I 4 f 2 f ~ y ? d 23"7"0 t7 . b: k I) 9 < &I fl7: Si/Si02/Si @&??B 9-14 C:f?+. Hz+ jS'*&gT& 67'
7 X ? + H b l T 35kV O ~ Q & L S I ~ F - - T ; ~ ~ X ? ? ~ ~ P O > 1) 1 ' / r f r - ) \ 1 ~ &
A L 7:. %O%&OGjM; F- XEC2 1 x1OZ1 atoms/m2 6. 9 r -)\O.h?gl]
h & ? f 2 7 " 1 b O ~ m T ~ $ l - T & 9 , H+ 6 6 bl12 H3+ O&A$gi&h:&bl-C > 1) 12
W P ~ I + a z t 12 2is. T 7:. ~ 3 7 5 : 1 2 m ; f & & m ~ i 5 6 e i t ; j = g - g i t ; ~ ~ ~ m a
??/T;+. 900°C, 60 %OT~- /b@BC: k Q % % @ T h 6&ik@TO%F@jI2Bg
M,&kLtbbl.
9-4-4 SO1 $3 Ft SO1 ?? k S A IC 2 P-K$E!Hi:BM L k i t + 6 %!&, Si02 @ O%1ZW@iS'
9 '1 7 2 k I) 100 1 g Z < /I+ bit t C: k 9 Ti& 3 6 Q Z ~ U & % J A ~ ~ ~ B D ~ W 2 2 &a3'. f l & i ; 7 ~ ~ 4 ~ j S ' f ~ # E i k L , Z$%@EO'+-TQ{ @&32T5 '927 .@@
A + & ? , E Y J U % $ ~ A G ~ ~ 1)~~%1:26. ; 5 ‘ / + ~ : , 7 ' ~ f 7 - 7 ~ ~ 4 zSi6' ?? b 9 IC BBOM%1: I2%1ZS@O k I) S b ~ f i # & % ? ? M%T 6 t t PZE3F-Th 6 84).
[ 1 ) Silicon on Aluminum nitride 4 ;5 2 ;5 %:, ? 4 2 T7"0 t 2 C2 Sili-
~ o n - o n - ~ l a s s ~ ' ~ ) ' ~ ~ ) , Y/b?= rf l-\, Sic, 7 4 + 3 2 FSEf l6) 2 P , dqgeflj
t L - C % ? ? ~ 6 B C : + 6 + $ 3 T h 6. fl & 42, ZX?EO%%?? b 97
)<4 7 . 2 0 3 j m GViB-Th Qf17). 4 $227 $7 =j 4 2 1"7°~ t;i 2Hbl-C SiO, a>
j t @ E ~ t L-CGb~%12&$?? G 9,%~+5?4&OM%jSc$?i7fLTbl 6. ? O $ T , AlN
I&%lZgq@ Si02 o 100 I g M k T h I ) , %%Crka Si t El$gBOI&e G 9. fl &I
I:, AlN C2%Bt~bz%XTh I ) , Z%+&% G A 3 < , %B",%I%BI2 9 '1 2 2 t H $ g E T h 6 . Z O k i C Z A l N ? ? S O I b ~ & ~ ~ 6 ~ & ~ # 2 4 & ~ ' ~ ) t L - C H b l b Z 2
:rZ 16) on-chip power device L 11 3 2 ;f %y 7"1:bBh& 3 h b Zf;l%EF. $E 17) silicon-on-glass $7 z&$E.kC: rf;" 'J L '1 3 2 $ R E 3 -tt 7: b o>. TFT T k < 42bhEJ.
G=k'1E;IEfiU%o)Pu7BCI@&IkLbt%LbkLb. 2b1=A?!\.l?'a'!&Ef72&9
%3-a&H b%R &fib .
E;I ZfiU%a@$D1~->\.l7o)B%m%&4?if?h7\.l bm). $7 \j '/z$%&t z3- *--Il.Z%7!ZEL: M$- bB%& t H e a t Flow o)&'19) 2$AA&b-+.? t t 1: k '1 SOAN (Silicon-On A1N) k T # & 2 kLI: MOSFET aZ%B9@1%+19E%
?dijSf$h b &I:. %RCI)c)l. 7 h L k SO1 &$$a%& t kL;E 2 kLI:. SOAN 7 /<4 7.12 -5"#j'I$h;' v-ff-?i: I/ .:, 9 3 11. Pq$'ig"20) C;{@kL& t 2 ;Ss/TC2;kj:.
3 12, SOI 7 4 x , S O A N % L V / ~ ; ' I ~ ~ ~ / ~ ~ X ~ ) ? E E ~ ; ~ ~ ' > 5 I
V - 9 3 >o)%%, &%a So1 TCL5!%$$no)?EglL 300K t~&\.~#&2/TC$-jS~,
;f? %Il.O?EEhL E;I EfiII%o)I:M, 540 K 3 TkWT b L t jSfZ2 &I:. SOAN
h k 7J~)'Il. 7 7.q1' 7. ClL ;f ? 4 )l.jk?&jS:jS',$$ 315 K 2 2 9 , SO1 7/'4 7. o) 540
K l i l kxb tA$EC:j&+L, ~ ~ $ ~ E ~ C Z L L ~ ~ ~ ~ ~ S ~ ~ : ~ L ~ { ~ C ; ~ ~ ~ ~ ~ Z t
E& AIN FS
91) 2 2&$f
(i$3H&) & 18) buried insulator 3 r -/\C:EM>& 3 hfi%fL@. SO1 D @ ~ L , @ fl+? a{<%. & 19) Heat Flow equation % q B Z ~ bj%b d l b%$i%DS. %a()) yL b s EEJXC $$$b F b - 2 Zj%DWI%.
t, 6'Cz I flIz. SO1 Cz Si? 6 El ;1B~%~$3%kt SOAN +/-;'% 9 9 11 3 > o, %&CzfL<-irk ~ I S E ~ B D ~ E E T & ~ . 2 & C Z SOAN 7/-; '4 z F ~ ~ J C ~ + + ; ~ \ I ~ / ~ E E
S k IF NDR (Negative Differencial Resistance) tLl& ( 2 -s 7:. t a L tr 12 El Zf.lln*>A%@@$D 2 &LIZ L tr 2 S?.
AlN BflgCL MePBIID (Metal Plasma-Based Ion Implantation and Deposi-
tion, f%@,4%-2~EA-@@&) bzk 9 Y 1 1 3 2 k C : & & ? b L k @ T 3 , SEi tf5XkS k V#,WF4L:iIkL b t t @/;I;- I kLIz. 7kX&AC: k b %& %k%77d +Z
2 f f l b>'5= SOAN ~ ~ & ~ f ~ b k L I z 8 9 ) 2 9 0 ) . HR (High-Resolution) -TEM, XPS,
SRP (Spreading Resistance Probe) 2 f f l b > IZ%@@% k 9 AlN @@%,%& > 11 3 >j@jaTl:~~-C;5!?EM>&~):b b LtriS'71;I;kIz. 9.15 h ~ t , @ k g a a > > 1)
3 > B , E A A l N B , % k I F > I l ~ > S ~ $ ~ P B ~ ~ % S L L ? B & ~ > T , > T - ~ ~ T
66 b t r @ h + b . I t,bz.LL@BOEb>AlN R2B&3&hrL t T S O I QIiSjkE,
%ZjJ T a s H @Fr;IBE t 2 6.
)Z-nt 9 +&%%-&'") 2 9-16 C:%?. SO1 @ % a Z 9 a w ( s k g a a 9 11 3
)@, E & A l N @ % k I F > I l 3>St8) a%FiLtL-s .3 9 L T S V , R@b:E
%l?hc?"3b. 1 2 4 O n r n T a R S k = ! ~ S b - . - C E ~ 9 6 a > ~ J 3>Btr5LE&AlNBT
G @ 9 +&+x-nT%\N&h:@fL L, z fit, aFs7@$&~>%Ftr 2 9 7 b > 6. )Z@9 +&%iF
& 21) spreading resistance profile +$$+?S&??%4M,R@ LR@El: ?k -;, TI$+-? + & % ? ? ~ ~ U Z L T ~ + ~ ~ & R s ~ ~ a > + & % ~ - & .
G , s_tsaa>> 11 32gj~- > * 9 - 2 ~ 3 + & 5 + 5 G, @%~a& t ~ f : AIN E I L ~ S ~ L fz,%Rl*iE+St Q r t + Z t .
( 2 ) Silicon-on Diamond-Like Carbon SO1 I: % b l 7 X G B W 1: L 7B&
&& hf: SiOz Of&a>RS$$HC;f. DLC (Diamond-Like Carbon) ~i b. T 4 +* 2 F%&C2%!Z3@73'--2 000 W/m K f $I '1, SiOz a>%iZ3@ 1 . 4 W/mK
k '1 G 1 0 O O i ~ H ! c B b ~ . T4++'/ Fa>SOI-a>&HC&@%jS.G~2%SP7
3 fzf l? 3$68BY4 +*'/ Fa>%@h2$d < 7 9 '1 2 7 ~ - ' \ a % m b ~ @ % ? b
fzhL:, $$$%2RB1:%B&B+j7<4~Zfl&Q. D L C i 2 T 4 + * 2 F1:%i3fU
a>&{ZS*+*L, E % t & E f i h 3 L~%@+ 5 9 . zhGa>19af%hfz+*P&a>
f z h , DLCa>BhiL&5.iCfSOIC:%df Q S i O z k G @ h f z ! P & i E + 5 9 l: 3 2 t, h Q . 2ZE 7' * ;k-7 7 ;i 75 - iK '/ (tetrahedral amorphous carbon,
ta-C) WRa> SO1 -a&HWlljSr$fi$!?2 h7 3 f; flg2), $%a> SOC (Silicon-On
Carbon) @&iCf@%2 tLT, %I: 75-$>%Ea>$+I&a&+ZL7blfz. sfi Silicon-On DLC (SOD) ;;5 > 75 .:, ;i- 4 '/ 7% k V 9 11 3 > 1:
DLCaE@a>%%lzk Y ) & & 2 t L h b 1 : t$f iE2hfzg3) . B$,Ga&a>kkE1zb;
b~7%maAFMd:[email protected]%%, Sm$d2CCfRMS{&f0 .38 lnmfh '1 ,
jF%C:?GG*7359%--C$I 9 7:. Lf:59 7, E@a>%%fiV*ET& 7 , @ % 2
7 .:, Y 7 71: 4K@&B+t b442fl2b1. % ~ l A % a > k 2 ~ z I . ~ D u L7S%t&%h'
h3 < , S O I @ ; $ ~ ~ ~ T ~ : ~ / ~ ~ ; ~ ~ S ~ E % C : B I $ ~ Q L tCf$%%tzif i tb .
I I I / , l l I I l I
R.T. 600 800 1 000 7 =- I b g E I"C1
DLC 73'777 7 7 4 \ IL-b b t , tE5t&+512&3$b~4&T-b 6. S?ET?"o>7=
-1b$IZ 57-77 7 7 4 t- -.m@ILhfBz 6. %Rm%$8@g$*l%e%n b 7:tb1:, iik
$,S2 il7z 3 3 mV27'1bt 7 = - 1 b 2 i 'L7zV~7~1bTm%@@@@mZFa$32
(@@EEF t L. -j ) 1~9~1-icRX l, i'L7:. @@tEF12, &E/DLC/Si (MIS) B &mEG-Eb%$+11!4h5 l, i'L 6. 9.17 12 7=-1b&E t 6EiBZF t QM% e5-b. f %2 i'L7: 3 3 a ~ % T m @ ~ $ % B 1 2 4 . 2 MV/cm Th 9 , W%hl bP61 E2 h-ic 3 I:,%% t %BlQ-b b "'. 900°C M T T m 7 =- 1bjZET12@iBEF1Z @
ILl2E l, i'L2bahP, 7=-lb?ZEhl ' 900PC l:&-bb t , 6I5iBEFi2h$h>G:@,T
$6. j s ~ h ~ i o o o - c ~ B L B t , @ ~ z ~ i ; t ; ~ , ~ ~ ~ i a ~ - b b . u l a g g k
11, @@~F~+B2~21~1%77:tbb:1~7=-1b?ZE12 900°CMT1Z-bbL t h s ' S z T h b t ba 2 6. &~i%%SiJ 1 -IL (Rapid Thermal Annealing, RTA)
( H B ~ a $ h ) b : 1 2 9 0 0 - 1 O O O ~ C 1 ~ ~ ~ I t b @ R ~ ~ ~ b : ~ ~ ~ - i : b % L b a
?77774 ~ - I L C ; ~ ; Z ~ M , ~ ~ L ~ ~ S > ~ I : . u l a % % e & t c z - b a I:, PBII&D&
1 ~ k 7 - i : 7 < l ,hf:DLCi27=-1b?ZEfE: 9 0 0 ° " C M T t L- i :%+k%hb~aC2
RTA @E-b 6 t t 1: k 11, T F T + @ % a CMOS 7 " ~ + z t +9L: Z @ # m h
bW%t 8.
S O D @ B a % % F E T 0 7 % 1 1 % ~ R ~ b 7ztbb: TEM i: k b&iRUhcjThi'L7:.
( a ) TEMi@B& ( b ) HRTEMBB&
H 9-18 SOD @ E D TEM 2 Si-DLC $$t52.$%%D HRTEM @if&
Q 9*18(a) l;f; SOD af$&2Zt@&+Eiia@iE3ET2k, 9. kg69 '1 I 2E 2 P2
&DLCEaB3d;f;?-kLTi'L, 550-600nm, 1 0 0 n m T h b . Y/"--Y%%C?Iz
sEi i@l ; f ; I .~ : ,42Tczk Y)gF%lz@Y)%< L t7!JTT3, 32RC;f; F34 I.,:,# 27l:d: Y ) F ~ ~ B ~ E = I I z ~ B L t W T 3 b. WE4 (b) hi, k % b > I ) 12
B ~ @ ~ & & D L C R ~ B B ' J ~ % @ ~ ~ . S % L I Z S @ ~ % ~ ~ T E M 4 /"--?Thb.
DLCBi i - -@Ti jY) , 7'+1b77Xn*%L:hb. -3, L 1 ) 3 2 E F C 2 @ &
% P ~ 2 % 3 T - - ~ ~ I z ~ ~ T b ~ & a f l b ~ b . %%E L 1) 1242 Si-DLC a%% L , 2 F 2 3 bM>Td29 3 Y) L-Cbxb. L i k a ~ 5 R 4 2
~ 3 ? M L I Z 7 ° 0 + ~ f l * - i $ 3 s 8 s L I ) I 2 2 D L C k l = * & T 3 b L t ~ W @ L $ C ; Z L - C
I..&.
9 1) I 2 2 K- X t L Izt%+a ULSI (Ultra-Large-Scale Integration) W@J tz#lP!kai j b*WditTl=i%R~-xT!!&Zt I i 'L-Cbl&. L 1) I 2 24.-;c 2 LIz%?Ea6JHI;f; LAN l:%C?&P--5'6%, %yfi$JjbE%L:k b&i$39X-f
h a @ % , #5 b bll21&3 X i- %53@$E74 X7OV 4 2 L-+-.BH 3 h b K r ~ E I E W h
b. t L 3 f l , / c ~ b 9 $ k E a 9 3 242 3 b&~1&b~~ZETt%552$&ba%fi$8 2 % % t b a & T h b . LkLd;f;B~7@/"2 F F ~ r ~ : , 7 ~ ' ~ ~ ' j S g $ % b ~ L t ~ ' E i , m T ; k , b .
~ $ R % ~ f $ & I ~ b l ~ k k / ~ ~ FFy %:, 7 ° 2 ~ l ] ~ $ b ~ ~ ~ ~ 2 k , 21. Lf i l3 . /<2 F*? *y 7'1 2 9 17' IJ 2 Y (bandgap engineering) t & % 3 h 6. ?-a €I 09 Ci 9 1)
I F Y y >y 7 O 2 j Z { $ a L 2 , ij 8 baI2%%+~L\2f$& Z t T $ & .
7kSPBIIl:k Y)E&=IhI~- f /%zrY"f4 I2Pt l%b6?~2&bI :K, &h=IkL
I : V ~ - / \ 2 7 9 + 7 " 9 9 ~ - ~ \ L z ~ ~ - J - b Z t f l T 3 k L l % , - f / % z r Y 7 4 2 r f r - ~ \ + C ~ & I : & $ L t f l T 3 b . B ~ A & ~ L I z - ~ / % Y Y ~ ~ I ~ P ~ L E . ~ I I 1 2 (Porous Silicon, PS) "23' a k j jb b )b < -t? 2 (Photo - Lumines-
& 22) indirect band gap /<2 F -r .r Yo@, k ,Qklz 2 bli&&$, pB7@F .y
7- k b2 -j . z a%++, 4rnEE+%oIBk (1%) aZTL-2, %+f?V TL2, 4 z % % a E T ( l i 5 Z F % a k % k L 2 % 2 6 k , 6 k L z & 6 ) L:B@-?32b1. B%'-j-b7z&Lzl2,
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