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FDC658APS

ingleP-ChannelLogicLevelPowerTrench

MOSFET

2011Fairchild Semiconductor CorporationFDC658AP Rev. 1.3

www.fairchildsemi.com1

FDC658APSingle P-Channel Logic Level PowerTrenchMOSFET

-30V, -4A, 50m

General Description

This P-Channel Logic Level MOSFET is produced usingFairchild's advanced PowerTrench process. It has beenoptimized for battery power management applications.

Applications

Battery management

Load switch

Battery protection

DC/DC conversion

Features

Max rDS(on) = 50 m @ VGS= -10 V, ID= -4A

Max rDS(on) = 75 m @ VGS= -4.5 V, ID= -3.4A

Low Gate Charge

High performance trench technology for extremely low

rDS(on)

RoHS Compliant

Absolute Maximum Ratings TA = 25C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain-Source Voltage -30 V

VGS Gate-Source Voltage 25 V

IDDrain Current - Continuous -4

A-20

PDMaximum Power dissipation 1.6

W0.8

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C

RJA Thermal Resistance, Junction-to-Ambient 78 C/W

RJC Thermal Resistance, Junction-to-Case 30 C/W

Device Marking Device Reel Size Tape Width Quantity

.58A FDC658AP 7inch 8mm 3000 units

PIN 1 SuperSOTTM-6

SD

D

GD

D

5

1 6

2

3 4

(Note 1a)

(Note 1a)

(Note 1b)

(Note 1)

(Note 1a)

- Pulsed

August 2015

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FDC658APS


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FDC658AP Rev. 1.3 www.fairchildsemi.com2

Electrical Characteristics TJ= 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage ID= -250A, VGS= 0V -30 V

BVDSSTJ

Breakdown Voltage Temperature

Coefficient

ID= -250A,

Referenced to 25C -22 mV/C

IDSS Zero Gate Voltage Drain Current VGS= 0V, VDS= -24V -1 A

IGSS Gate-Body Leakage VGS= 25V, VDS= 0V 100 nA

On Characteristics

VGS(TH) Gate Threshold Voltage VDS= VGS, ID= -250A -1 -1.8 -3 V

VGS(TH)TJ

Gate Threshold Voltage

Temperature Coefficient

ID= -250A,

Referenced to 25C4 mV/C

rDS(on) Static Drain-Source On-Resistance

ID= -4A, VGS= -10V 44 50

mID= -3.4A, VGS= -4.5V 67 75

ID= -4A, VGS= -10V,

TJ = 125C60 70

ID(ON) On-State Drain Current VGS= -10V, VDS= -5V -20 A

gFS Forward Transconductance ID= -4A, VDS= -5V 8.4 S

(Note 2)

Dynamic Characteristics

Ciss Input CapacitanceVDS= -15V, VGS= 0V,

f = 1MHz

470 680 pF

Coss Output Capacitance 126 180 pF

Crss Reverse Transfer Capacitance 61 90 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time

VDD= -15V, ID= -1A

VGS= -10V, RGEN= 6

7 14 ns

tr Turn-On Rise Time 12 22 ns

td(off) Turn-Off Delay Time 16 29 ns

tf Turn-Off Fall Time 6 12 ns

Qg Total Gate ChargeV

DS

= -15V, ID

= -4A,

VGS= -5V

6 8.1 nC

Qgs Gate-Source Charge 2.1 nCQgd Gate-Drain Charge 2 nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A

VSD Drain-Source Diode Forward Voltage VGS= 0V, IS = -1.3 A (Note 2) -0.77 -1.2 V

Notes:1: RJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RJCis guaranteed by design while RCAis determined by the user's board design.

Scale 1: 1 on letter size paper

2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

a) 78oC/W when mounted on a 1 in2pad of 2 oz copper

b) 156oC/W whe mounted on a minimum pad of 2 oz copper

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Typical Characteristics

Figure 1.

0

5

10

15

20

0 1 2 3 4 5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-ID,DRAINCURRENT(A)

VGS= -10V

-3.5V

-3.0V

-4.5V

-4.0V

-5.0V

-6.0V

On-Region Characteristics Figure 2.

0.8

1

1.2

1.4

1.6

1.8

2

0 4 8 12 16 20

-ID, DRAIN CURRENT (A)

NORMALIZED

DRAINT

OS

OURCE

ON-RESISTANCE

VGS= -4.5V

-6.0V

-5.0V

-8.0V-7.0V

-10V

Normalized On-Resistance vs DrainCurrent and Gate Voltage

Figure 3.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED

DRAINT

OS

OURCE

ON-RESISTANCE ID= -4.0A

VGS= -10V

Normalized On-Resistance vs JunctionTemperature

Figure 4.

0.02

0.06

0.1

0.14

0.18

0.22

2 4 6 8 10

-VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on),DRAINT

OS

OURCE

ONR

ESISTANCE

(OHM)

ID= -2.0A

TJ= 125oC

TJ= 25oC

On-Resistance vs Gate to SourceVoltage

Figure 5. Transfer Characteristics

0

3

6

9

12

15

1 2 3 4 5

-VGS, GATE TO SOURCE VOLTAGE (V)

-ID,D

RAINCURRENT(A)

TJ= -55oC

25oC

125oC

VDS= -5V

Figure 6.

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-IS,REVER

SEDRAINCURRENT(A) VGS= 0V

TJ= 125oC

25oC

-55oC

Source to Drain Diode Forward Voltagevs Source Current

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FDC658APS


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Figure 7.

0

2

4

6

8

10

0 2 4 6 8 10

Qg, GATE CHARGE (nC)

-VGS,GATE-SOURCEVOL

TAGE(V)

ID= -4A VDS= -5V-10V

-15V

Gate Charge Characteristics Figure 8.

0

150

300

450

600

0 6 12 18 24 30


CAPACITANCE(p

F)

Ciss

Coss

Crss

f = 1 MHz

VGS= 0 V

Capacitance vs Drain to Source Voltage

Figure 9.

0.01

0.1

1

10

100

0.1 1 10 100


-ID,DRAINCURRENT(A)

DC

1s

100ms

100usrDS(on)LIMIT

VGS= -10V

SINGLE PULSE

RJA= 156oC/W

TA= 25oC

10ms

1ms

Forward Bias Safe Operating Area Figure 10.

0

2

4

6

8

10

0.01 0.1 1 10 100

t, PULSE WIDTH (s)

P(pk),PEAKTRANSIENTPOWER(W) SINGLE PULSE

RJA= 156C/W

TA= 25C

Single Pulse Maximum PowerDissipation

Figure 11.

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, RECTANGULAR PULSE DURATION

r(t)

,NORMALIZED

EFFECTIVE

TRANSIENTTHERMALRESISTANCE

RJA(t) = r(t) x RJA

RJA= 156oC/W

TJ- TA= P x RJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

Typical Characteristics

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notintended to be an exhaustive list of all such trademarks.

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*

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Saving our world, 1mW/W/kW at a time

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SuperFET

SuperSOT-3

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* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OURWEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM.FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OFOTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THEWARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

AUTHORIZED USE

Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinarylevels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotiveor other transportation, (2) military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild productreasonably would be expected to result in personal injury, death or property damage. Customers use of this product is subject to agreement of this Authorized Usepolicy. In the event of an unauthorized use of Fairchilds product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall besubject to Fairchilds Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,under Terms of Use

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributorsare genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicaland product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this globalproblem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specifications may changein any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. FairchildSemiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the r ight to makechanges at any time without notice to improve the design.

Obsolete Not In ProductionDatasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.The datasheet is for reference information only.

Rev. I76

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FDC658AP-103298