GaN
TRC LIBRARY
212014 ( ) ( ) ( University of Carifornia Santa Barbara) 3 LED GaN-LED GaN GaN GaN2013 NEDO ( ) GaN 2020 49 kWh/ 1 )CO2 269 t/ 103 k/ 2030 89kWh/2020 50 kWh/ 2030 90 kWh/ GaN GaN GaN GaN GaN SiC GaN
2015 2
1
1GaN 11.1GaN 11.2GaN 31.2.1GaN 31.2.2GaN 5(1) 5(2) 5(3) 61.2.3GaN 7(1) GaN 7(2) (GaN-HEMT) 71.2.4GaN 8(1) LED 8(2) 9(3) n p GaN 10(4) 101.2.5GaN 11(1) 11(2) 14(a) 14(b) 151.3GaN 181.4SiC 191.4.1 191.4.2 191.4.3GaN 201.4.4GaN SiC 20
2GaN 222.1Si,SiC 222.1.1MOSFET 222.1.2 IGBT 222.1.3SiC 232.2GaN 242.2.1GaN-HEMT(HFET) 24(1) 24(2) 25(3) 26(4) 262.2.2GaN-HEMT 27
2
(1) GaN-HEMT 27(2) GaN-HEMT 30(3) MMIC GaN-HEMT 33(4) GaN MIS HEMT 37(5) SiCN MIS HEMT 39(6) GaN-HFET 43(7) GaN-HEMT 45(8) AlGaN/GaN-HFET 47(9) AlGaN/GaN-HEMT 49(10) AlGaN/GaN-HEMT 52(11) AlGaN/GaN-HEMT 54(12) GaN-HEMT 562.2.3GaN 59(1) NiOx/Ni/Au 59(2) Pt/GaN-SBD CO 62(3) ALD Al2O3 GaNMIS 63(4) GaN 65(5) GaN 66(6) GaN-p+n 672.2.4GaN 69(1) FP GaN SBD 69(2) GaN 72(3) GaNGaN 75(4) GaN 77
3GaN 823.1GaN 823.1.1 83(1) 84(2) GaN-HFET 863.1.2SiC 88(1) 89(a) 89(b) SiC 90(c) SiC 90(2) SiC 913.1.3 94(1) Si GaN 94(a) GaN 95(b) 96(2) MOVPE GaN on Si 97
3
(3) Si GaN 99(a) Si GaN 100(b) Si GaN-HFET 100(c) GaN 1023.1.4 102(1) AlN Al AlGaN-HEMT 103(2) (AlN) 105(a) AlN 106(b) AlN 106(c) AlN 106(3) GaNMOCVD 1083.2GaN 1113.2.1GaN 111(1) GaN 111(2) GaN 112(a) GaN 112(b) GaN 112(c) GaN 1133.2.2 113(1) 113(2) FIELO 115(3) DEEP 118(4) 121(5) HVPE 1233.2.3Na 126(1) GaN 126(2) GaN 1273.2.4 128(1) 128(2) 129(3) 132
4GaN 1354.1GaN 1354.2 1364.2.1GaN-HEMT 1364.2.2AlGaN/GaN-HEMT 138(1) Si AlGaN/GaN-HEMT FP 138(2) AlGaN/GaN-HEMT FP 1394.3 1424.3.1GaN 142(1) (MOVPE) 142
4
(2) (MBE) 1434.3.2GaN 145(1) GaN CMP 145(2) SiCGaN 1484.3.3 152(1) GaN 152(2) 154(a) SiO2/GaN 154(b) SiN/(Al)GaN 154(c) Al2O3/GaN 155(d) High-k/(Al)GaN 1554.3.4 155(1) GaN-HEMT Si 156(2) Si GaN/AlGaN/GaN-HEMT 1564.4 1614.4.1Na GaN 1614.4.2MOCVD 162(1) MOCVD 163(2) Si 163(3) MOCVD 163(4) MOCVD 1644.4.3GaNSiC 1664.4.4MOCVD 1674.5 1704.5.1 1704.5.2GaN-HEMT 170
5GaN 1735.1 1735.1.1Si DC-DC 1735.1.2GaN 1745.2 1775.2.1 GaN-HEMT 1775.2.2 GaN-HEMT 1805.3 1845.3.1 1845.3.2GaN 185(1) 185(2) 186(3) GaN 186(a) 187(b) 187
5
5.4 1895.4.1 3kV GaN 1895.4.2 6kV GaN 191
6GaN 1956.1GaN 1956.1.1 1986.1.2 198(1) 199(2) 2026.2 2056.2.1 2056.2.2GaN 2076.2.3GaN 2106.2.4 GaN 211(1) GaN (LEDLD) GaN 211(2) GaN 2126.2.5GaN 2156.3GaN 2186.3.1 219(1) GaN 219(2) 2306.3.2 237(1) GaN 237(2) GaN 240(3) GaN 254(4) GaN 258(5) 2676.3.3 270(1) 270(2) GaN 272(3) 279(4) 284(5) 286(6) 289
7
1.2.3GaN
GaN GaN LED 6)
GaN 7) (HEMT)
(1) GaN 1969 RCA Maruska & Tietjen (HVPE)950GaN 3.39eV 6) GaAsP LED GaP:N LED LED1971 Pankove GaN p Znn Zn metal-insulator-n-type semiconductor(min) LED LED GaN p GaN pn 6)1974 ( ) (MBE) LED MBE HVPE 1981 min LED 6)(Metalorganic Beam Epitaxy;MOVPE) 1984 1986 AlN GaN 6) 1989 Mg p GaN pn LED pMg 6)
(2)(GaN-HEMT) 2GaN GaN p 1991 1980 2 ( ) 2HEMT(Heterojunction Electron
43
(6)GaN-HFET 0.1 10THz X 11 GaN-HEFT AlGaN/GaN 2DEG 11 2DEG ( ) 1 2.2-19 HFET VDS
(1)
0 eff 0 eff
(2)
(3)
LG eVGS Vth m* d 10 100nm GaN-HFET 1THz 80nm
111
3.2GaN
GaN GaN GaN GaN GaN
3.2.1GaN
GaN 1
(1) GaN1969 LED GaN LED 1971 GaAs InP III GaAs1238As1GaN 2500 45000 GaN GaN (Halogen transport vapor phase epitaxyHVPE Hydride vapor phase epitaxy ) 1 GaN LED GaN Blu-ray Disc LD SiC HEMT Si AlGaN/GaN-HFET (2013 ) GaN 4 1HVPE HVPE GaN Saint-Gobain( )Kyma( )Samsung Corning( ) (High Pressure Solution GrowthHPSG) HVPE GaN Ga GaN 12008000 1 m/ 150016000 1 10 m/ 102cm-2 GaN
170
4.5
4.5.1
( )JIS ( ) t FIT(Failure In Time: ) 1FIT=10-9/h=1ppm/1000h( / )(MTTFMean Time To Failure) MTTF( ) MTTF=1/
4.5.2GaN-HEMT
1SiC GaN-HEMT 4.5-1 1 GAN-HEMT SiC GaN-HEMT MOCVD Ti/AlNi/Au
201
(d) 4
6.1-3
(FAX 077-533-8626GaN
520-0842TEL077-533-8625([email protected]
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TRCLIBRARY RX-237411
GaN
21GaNSiC GaNGaN
