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1
IGBT
1 2017129
2
1. 2. 3. 4. 5. SOASafe Operating Area6. 7. 8. 9. 10. IGBT
11. 802008324
B. Jayant Baliga, Fundamentals of Power Semiconductor Devices, Springer Science + Business Media, 2008.
3
IGBT
MOSFET200V
IGBTMOSFET
4
IGBT
P-
+P
MOSFET
N
+P
+N
1d
5
IGBT
MOS
SOA/300V
MOSFET
6
IGBT PiN
VG VDSVT MOSFET MOSFET PNP Tr PNP Tr
GV
CEI
CEV
MOSFET
7
IGBTRsP-
RS 0.7V NPN
RS
NPN Tr
IGBT PNP Tr PNP TrMOSFET
( )
( )NPNPNPRSNPN
E
RSEECB
ENPNCEPNPB
II
IIIIIIIII
+=
+====
1
,,1
1
2121
2211
NMOSFETNPN
PNP
RS
1CI
2EI
PNP
NPN
21 CB II =
2BI
RSI
1EI
1EI
8
=BVCEOP+N-P-
N-d1LP
V
PD
m LqN
Vd += 21
9
N-P-J2P-
MOSFETP-N+
DMOSDMOS
P+N-J1J2J1
AC DC
N1.52Ex. NDB10161017cm-31015m
10
IGBT
IGBT
)cm(103.1 2122
=
=qENdD CSBB
2J
1J
2J
1J
3J
3J
+P
P+N
N
2d
1d
1d
+P
P+N
NN
DB DB P+
11
PiNMOSFET PNPMOSFET
102103
12
IGBT PiNMOSFET
P-
+P
MOSFET
N
+P
+N
PiNCI
13
PiN MOSFET
( ) ( )
( ) ( )( )
( )
=
=
=
+
=
aLd
aa
M
kTqV
a
aa
a
TGOXns
CHC
aia
CF
LdeqkT
LdLd
qkT
V
eLd
LdLdLdF
VVZCLI
LdFnqWZDdI
qkTV
a
M
for 8
3
for 3
tanh25.01tanh
2ln2
2
2
4
PiN MOSFET
dd1/2WIGBTZMOSFET
14
Fd/LaPiN
1.E-03
1.E-02
1.E-01
1.E+00
0.1 1 10
d/La
Fd/
La
F
d/La1
15
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0.0 0.5 1.0 1.5 2.0 2.5
V F V)
J
C
A/cm
2
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
Ron,s
pm
cm
2
Jc(IGBT)
Jc(max)
Ron,sp(IGBT)
Ron,sp(ideal DMOS)
IGBTI-VPiNMOSFET
600V
IGBTTj =200Ron,sp MOSFET IGBT
16
IGBT MOSFET
ePNP
PNPh II
=
1
ePNP
ehE
I
III
=
+=
11
( )a
TPNP
Llcosh1
=
::aL
l
MOSFET
PNP
P-
+P
N
+P
+N
hI
eI
EI
CI
17
MOSFET
( )( )
( )TGOXnsCHCPNP
aia
CF VVZC
LILdFnqWZD
dIqkTV
+
=
1
2ln2
PiN MOSFET
NPiN
MOSFET
VFMOSFET VFPiNMOSFET
MOSFET IC MOSFETPiNMOSFET IC MOSFET
( ) CPNP I1
18
MOSFET2
MOSFETIeMOSFET:
( )2, 211
TGCH
oxns
PNPsatC VVL
ZCI
=
( )TGCH
oxns
PNPms VVL
ZCg
=
11
( )22 TGCH
oxnse VVL
ZCI =
msIGBT msMOSFET PNP0.5
19
MOSFETPNPPNP
N
( ) DCS
Da
TPNP qNVdWdl
Ll 2 ,
cosh1
11 ===
( )( )[ ] eCaD
S
a
a
PNP
e
CC
C
C
IVLqNLl
LlIdV
ddVdI
r 22 21coshsinh
11
=
==
l
20
IGBT
PNP
l
DW
l
P-
+P
N
+N
+P
21
IGBT
1d
P-
+P
N
+N
N
2d J1
J2
+P
N
PNP
J1
La
22
HLaaHLHL
DLLLp
dxpd === ,022
2
( )[ ]( )a
a
p
a
LdLxd
qDJLxp
1
1
coshsinh
2)( =
0
01
0)0( ,)0()()0( ,0)(
pJJJxpppdp
np
====
( )ap
a
xp
LdqDJLp
dxdpqDJ
10
0
tanh2
2
=
==
23
( )
== 1cosh
12 1
2
0
1
ap
ad
S LdDJLpdxqQ
P-
+P
N
+N
+PIGBT
0p
x
PiN
0x=00x=0
pn
pn
1d
p
24
pn
pn
=
=
=
+
+
ai
D
p
aNP
D
iN
NNP
Ld
nN
qDJL
qkTV
Nnp
pp
qkTV
12
2
00
0
tanh2
ln
,ln
V 8.0+NPV
ACCJFETCHMOSFET
MOSFETMNPIGBT
VVVVVVVV
++=++= +
,
25
N
0d1
( )( )( ) dx
dppq
kTqp
JxEpn
pn
pn
1)(
+
+
=
)()( xpxn =
( )( )( )
+
+
+
=apn
pn
aapn
pM L
dLd
Ld
qkTV 111 sinhln
2tanhlncosh
2
np JJJ +=
:V 1.0MV
26
MOSFET
MOSFET
JFET
( )( )TGoxns
CellCHPNPCH VVC
WJLV
=
1
( ) ( )( )0
0
221
WXLWWXJV
PG
CellPPNPJFETJFET
+=
( ) ( )( )TACCGoxnA
CellPGPNPACC VVC
WXLJKV
= 21
IGBT::
P:0
Cell
P
WWX
JFET VJFET
JFET W0
VJFET JFET
27
P-
+P
N
+N
+P
2hI eI1hI
SR
1J
3J
2J
Ie MOSFET Ih1J1J2
Rs J3
Rs Vbi
NPN
PNPNPN = 1
28
PNP
PNP TrT
NPNP Tr
J1N NDB
/ N
( )aT Llcosh1
=
Ih1 Rs
=
DB
AE
N
nE
nE
pBE N
NWL
DD
N
N
29
NPN
NPN Tr
P+P-J3
P+P-P+N+P-N+
N+MOSFET N+
MOSFETP+
IGBT
30
P+
( )21 ESPESBPNPCellbi
CL LRLRWVJ
++=
( )
( )
Cell
CLCL
ESPESBPNP
bi
SPNP
biCL
hPNPhC
biSh
ESPESBS
ZWIJ
LRLRZV
RVI
IIIVRI
ZLRLRR
=
+==
==
+=
+
+
21
21
1
21
::
P-
+P
N
+P
2EL 1EL
EL
+N
CellW
SBR
1hI
+SPR
1ESB LR
31
P+
P-
+P
N
+P+N
N
P-
+N
+P
+P
P+N+P-
32
P-
N
+P+N +N
+P
+P
1hI2hIeI
2
1/2
33
N VT
P-
N
+P+N
+P
P- VT
34
0
200
400
600
800
1,000
1,200
1,400
0 200 400 600 800 1,000 1,200 1,400
tox
JC
L
(A/cm
2)
4
APoxT NtV
( )TGoxnsoxCH
CH VVZtLR
=
35
IGBT
+
=WG
GPNPCh LL
LII 1GLWL
P-
1hI1hI
+=
G
WG
ESBPNP
bi
LINCL
LLL
LRZV
I
1
,
ZLRR ESBS 1=
( ) GESBPNPbi
WG
LINCLLINCL LLR
VLLZ
IJ
1
,,
=+
=
36
IGBT
( )[ ] ( )[ ]122, ln42
EWWWWGSBPNP
biCIRCL LLLLLLR
VJ+
=
GL
P-
1hI
1hI
WL
( )( )2
22
1 44
WG
WWGPNPCh LL
LLLIJ+
+=
== 1
ln221 EW
WSBL
LLSB
S LLLRdr
rRR W
EW
( )( )[ ] ( )[ ]122
2
,
ln48
EWWWWG
WG
SBPNP
biCIRCL
LLLLLLLL
RVI
++
=
37
IGBT
CIRCLSQCL JJ ,, 21 CDCD II
49
/
1CI
21.0 CI
1t
2CI
2t11.0 CI tt
PNP
2121 ttII CC >