Impact of SiC and RC-IGBT on Drive and Power Supplyconfig.peac-conf.org/ckfinder/userfiles/files/P7.pdf · Impact of SiC and RC-IGBT on Drive and Power Supply ... Source: International

© Fuji Electric Co., Ltd. All rights reserved. 1

Impact of SiC and RC-IGBT

on Drive and Power Supply

5 November, 2018

Dr. T. Fujihira （藤平龍彦）

Fuji Electric Co., Ltd（富士電機）

PEAC 2018, Shenzhen

IEEE PEAC 2018 No Reprint Without Authorization


Introduction

SiC

RC-IGBT for xEV

Conclusions

Outline



Past, Future, and Today

the universe-13.8 billion years

the sun-4.6 billion years

the earth-4.6 billion years

>+100 trillion years

+12.3 billion years

+1.75 billion years

life-3.8 billion years +? billion years

multicellular organisms-1 billion years

vertebrate-400 million years

primates-65 million years

human race-6 to -7 million years

character-6 thousand years

industrial revolution-1 hundred years

0 years (today)

+? billion years

+? billion years

+? billion years

+? billion years

+? billion years

+? billion yearsIEEE PEAC 2018 No Reprint Without Authorization


12 Risks that Threaten Human Civilization

Source: 12 Risks that threaten human civilization

Global Challenges Foundation, Feb. 2015

Extreme Climate Change

Nuclear War

Global Pandemic

・・・



Resolution of UNs 70th General Assembly



Wo

rld P

op

ula

tion (

Bill

ions)

Wo

rld G

DP

(B

illio

ns 2

00

5 U

SD

)Year Year

Source: World Population Prospects: The 2012 Revision

Population Division of the Department of Economic

and Social Affairs of the United Nations Secretariat

Source: International Energy Outlook 2014, Reference case,

U.S. Energy Information Administration

Red line: IEO2014 history & projection

Dashed line: linear fitting

What will come in this century?

Population grows 1.5 times GDP more than 4.5 times



Wo

rld P

rim

ary

En

erg

y C

on

sum

ption

(Qu

ad

rilli

on B

tu)

Year

Red line: IEO2013 history & projection

Dashed line: linear fitting

Source: International Energy Outlook 2013, Reference case,

U.S. Energy Information Administration

Source: IPCC 5th Assessment Report

Climate Change 2014 Synthesis Report, 2015

Figure SPM.6.

Energy, CO2 Emission, Climate Change

Energy consumption 2.5 times Temperature rise 1-4 degree

Sea level rise 0.4-0.8 meter



Widespread Impacts of Climate Change

Source:

IPCC 5th Assessment Report

Climate Change 2014 Synthesis

Report, 2015.

Figure SPM.4.IEEE PEAC 2018 No Reprint Without Authorization


COP21 and Paris Agreement



Switch from fossil to renewable energies

Shift from car, jet and combustion engines

to xEV and electric transportations

Increase efficiency of power conversion

Reduce consumption, increase reuse and recycle

of limited natural resources

including Cu and Iron in power electronic systems

to establish a sustainable society

What we should conduct

as power electronic R&D or Industries are



Introduction

SiC

RC-IGBT for xEV

Conclusions



Advantage of SiC Trench MOSFET Module

2.5xPout or 4xfc and 1.5xPoutVcc=600V, Io=vari., fc=vari., cosφ=0.9, λ=1, Tj=175℃Si : Vge=+15V/-15V, Rg=12Ω All SiC: Vge=+20V/-5V, Rg=27Ω

[Module]

Si-IGBT : 1200V-50A X-Series IGBT

All-SiC : 1200V-50A 1G SiC Trench MOS

・Under the drive condition of the 7.5 kW inverter, the All-SiC module can reduce the dissipation loss to 59% against the Si module.

・Loss reduction of 46% is possible even if the carrier frequency is set to 20 kHz (x 4).・Even if the inverter has a higher output, 7.5 kW → 11 kW,

the dissipation loss is lower than that of the Si module.IEEE PEAC 2018 No Reprint Without Authorization


Application Examples of SiC Devices

CY2012 2013 2014 2015 2016 2017 2018 2019★ Power Supply

650V SiC-SBD

★ EV charger1200V SiC-SBD

★ General purpose INV

600V,1200V SiCHybrid Module

★ Mega solar PCS1200VAll-SiC Module

★ IP6x INV1200V TrenchAll-SiC Module

★ PCS1200VAll-SiC Module

★ Traction propulsion

3300V SiCHybrid Module

☆ Premium INV☆ APS and Inverter

for traction1200V TrenchAll-SiC Module

★ UPS1200V SiCHybrid Module

★ Servo, Robot1200V SiCHybrid Module

SiC-SBDHybridModule

DiscreteSiC-SBD

All-SiCModule

★ HEV Racing Car1200V SiCHybrid Module


http://www.google.co.jp/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&cad=rja&uact=8&ved=0ahUKEwiS6New94rNAhVBmpQKHdMRBYEQjRwIBw&url=http://www.fujielectric.co.jp/about/news/09102901/&bvm=bv.123664746,d.dGo&psig=AFQjCNEENfgQ8LNoT9u629KlVba6mijGuw&ust=1465010036476896

http://www.google.co.jp/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&cad=rja&uact=8&ved=0ahUKEwiS6New94rNAhVBmpQKHdMRBYEQjRwIBw&url=http://www.fujielectric.co.jp/about/news/09102901/&bvm=bv.123664746,d.dGo&psig=AFQjCNEENfgQ8LNoT9u629KlVba6mijGuw&ust=1465010036476896

http://www.google.co.jp/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&cad=rja&uact=8&ved=0ahUKEwix1OqM7YrNAhWFjZQKHexHAm8QjRwIBw&url=http://www.logi-today.com/30844&bvm=bv.123664746,d.dGo&psig=AFQjCNFLAZM1FuV57FDgvUU8LOtrHTNN2A&ust=1465008758434913

http://www.google.co.jp/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&cad=rja&uact=8&ved=0ahUKEwix1OqM7YrNAhWFjZQKHexHAm8QjRwIBw&url=http://www.logi-today.com/30844&bvm=bv.123664746,d.dGo&psig=AFQjCNFLAZM1FuV57FDgvUU8LOtrHTNN2A&ust=1465008758434913


Photograph by Central Japan

Railway Company

Rectifiers and inverters in N700S propulsion systems utilize SiC-Hybrid modules.

Trial operation started in April, 2018

AC25kV , 1φ , 60Hz

Transformer

Induction MotorConverter Inverter

IM

IM

IM

IM

Inverter

N700S Test Train Driving System for Trains

Converter Inverter

Comparison with

conventional N700A

Volume：▲10％

Weight：▲13％

SiC-Hybrid

SiC-Hybrid Module

3.3kV-1.8kA Rated

190×140mm

Converter

Next Gen. Shinkansen Use Hy-SiC Module



Inverter Loss:

▲20% Reduction

Speed Sensor is not

necessary. Simplified

interconnects, high reliability

Speed Sensorless

Control

Running Wind

Cooling

No need for heat pipe in

cooling body, simple brazing

type, unit with small size and

light weight

■Design based on wind‐tunnel tests

using fluid analysis and miniature

model for train

■Confirmation of targeted

performance by stationary evaluation

◆Downsize: ▲64%, reduction of weight: ▲45%

◆Test run in test lanes since April 2018, pre-evaluation of control tuning and inductive interference

tests completed.

■Ratings：3.3kV／1.2kA

■Structure：SiC Hybrid Module

IGBT(7G)＋SiC-SBD

■Torque error: ±５％Ride quality improved

Use of SiC Devices

New Technology

New TechnologyNew Technology

VVVF Inverter

◆720kW Rated Inverter

（2-inverter unit, 4-motor drive）

- Downsize:▲64%，- reduction of weight: ▲45%

（comparison with Fuji conventional products）

Inverter1 Inverter2

New VVVF Inv. Use Hy-SiC Module


© Fuji Electric Co., Ltd. All rights reserved.

Reduced Inverter Loss

IGBT All-SiC

▲40%◆Best use of low loss and high temperature operation in SiC devices

・All closed self-cooling structure, as well as downsizing

・Outdoor installation, application for environment with corrosive gases

Features

All-SiC Module

Downsize

Volume

1/3

IP55 Inverter PanelEnvironment-

resistant Inverter

【Outdoor Pumps】【Ventilation Fans】

・Factory production for outdoor harsh environment

Application

【Vehicles, Tires】

400V/37kW

■ Loss reduction removes cooling fans, and thus realizes environment-resistant,

maintenance-free inverters.Performance Comparison

Power Supply / Capacity

3 phase, 400V/3.7～37kW (Sales start soon）

Corrosive gas

（H2S、N02、SO2)

Salt damage、Direct sunlight

16

Environment-Resistant Inv. Use All-SiC Module



1200V SiC 1G Trench MOSFET

T. Tsuji, et al. FUJI ELECTRIC REVIEW. 2016, vol. 62, no. 4, pp. 218-221.

Trench bottom p+ reduces gate oxide e-field for high gate reliability.

High channel mobility and high density channel design reduce RonA.

RonA is reduced with keeping BVdss high by optimization of JFET.

n-drift layer

P basen+

Drain

Source Metal

n+ substrate

SourceGate

n+ p+p+

P base

p+ p+p+

SiO2G

ate

JFET

MOS Channel

JFET

Cross-sectional Structure Chip Photograph

1200V Device



Extremely Low RonA and High Vth

Temperature Dependences of RonA and Vth

RonA is as low as 3.5 (mWcm2) at Tj=25℃.

Vth is as high as 5.0 (V) at Tj=25℃ and 3.5 (V) at 200℃.


Vth

RonA

Ron

A(mW

cm

2)

1200V Device



Low Crss, Low Qg, and Low Qsw

Capacitance characteristics

Crss and Qsw of the 1G trench MOSFET are smaller than those of planar

MOSFET due to the trench bottom p+ region. It indicates that the trench

MOSFET enables fast switching.

Gate charge characteristics

Ciss

Coss

Crss

f=100kHz

Trench MOS

Planar MOS

25nC

Qsw=30nC

Vds

Vgs

1200V Device



Low Switching Loss

Turn-on Loss

The 1G Trench SiC-MOSFET shows better switching loss than planar SiC-

MOSFET, by 47% for turn-on and 48% for turn-off, respectively, at Rg=22Ω

and Tj=25℃ under an inductive load.

Turn-off Loss


1200V Device



SBD-Integrated SiC Trench MOSFET

Y. Kobayashi, et. al., Tech. Digest of IEDM 2017, pp. 211-214, Dec. 2017.IEEE PEAC 2018 No Reprint Without Authorization


SBD-Integrated SiC Trench MOSFET

Y. Kobayashi, et. al., Tech. Digest of IEDM 2017, pp. 211-214, Dec. 2017.

No degradation of Ron or Vf up to 1500A/cm2 reverse current conduction

1200V Device



The halo implanted high acceptor concentration region behind the channel blocks the penetration of the

depletion region into the p-base. Since the short channel effect is suppressed without increasing the acceptor

concentration in the channel, high channel mobility is maintained by low acceptor concentration.

Low RonA of 2.0 mWcm2 with high Vth of 4V achieved on the 1.2kV MOSFET.

Y.Kobayashi et.al, FR.D2.1, ICSCRM 2017, Washington, DC, USA, Fri. Sep. 22, 2017

This work has been implemented under a joint research project of Tsukuba Power Electronics Constellations (TPEC)

Low On-Resistance SiC Trench MOSFET



S.Y. Ji et.al, MO.02.03, ECSCRM 2018, Birmingham, UK, Mon. Sep. 3, 2018

This work was supported by SIP and a collaboration with AIST, Fuji Electric, Mitsubishi Electric, and Hitachi Ltd.

SiC-SJ is thought to offer great advantages (a significant reduction of RonA) to devices with high blocking voltage,

such as 3.3 and 6.6 kV class, using p/n columns in a depth of 25 and 50 μm.

using the process condition of HCl=2slm, H2=40slm, pressure of P=70kPa, and C/Si=0.6, a complete fill of deep

trench was successfully achieved at a filling rate of 6.2 μm/h.

50μm-Thick SJ Region for 6.6kV MOSFET



p anode 1 x 1017 cm-3, 1.7 mm

3 x 1020 cm-3, 0.3 mmp contact

n- drift2 x 1014 cm-3

239 mm

n+ buffer

n+ substrate

p anode 1 x 1017 cm-3, 1.7 mm

3 x 1020 cm-3, 0.3 mm

Carrier lifetime

long t

short tElectroninjectioncontrol

n- drift2 x 1014 cm-3

239 mm

n+ buffer

n+ substrate

170 mm

p contact

D

Conventional 4H-SiC PiN diodeW/O carrier injection control

Proposed 4H-SiC PiN diodeW/ carrier injection control

Carrier injection control:

Carbon implantation has been used to increase the carrier lifetime of 4H-SiC. By controlling

annealing temperature and time, the carrier lifetime of the anode side in a drift layer is

increased while the carrier lifetime close to the cathode layer is maintained at a low level.

K.Nakayama et.al, WE.02a.04, ECSCRM 2018, Birmingham, UK, Wed. Sep. 5, 2018

This work was supported by SIP and a collaboration with AIST, Fuji Electric, New Japan Radio, Mitsubishi Electric, and Kyoto Univ.

27.5kV PiN Diode with Low Vf



27.5kV PiN Diode with Low Vf

Forward Characteristics of Fabricated PiN Diodes

Reverse Characteristics of Fabricated PiN Diode

OCVD waveforms offabricated PIN diodes

OCVD:Open Circuit Voltage Decay

The low-level carrier lifetimes (tLL) of the PiN diodes were calculated from the OCVD waveform slopes at 2.55 V,

being 4.32 and 1.19 μs for the diodes fabricated with and without carrier injection control, respectively

By introducing carrier injection control, the Vf of fabricated PiN diode decreased from 15.5 to 11.5 V.

The VB of the fabricated PiN diode was 27.5 kV, which is the highest yet reported for 20-A 4H-SiC PiN diode.

K.Nakayama et.al, WE.02a.04, ECSCRM 2018, Birmingham, UK, Wed. Sep. 5, 2018

This work was supported by SIP and a collaboration with AIST, Fuji Electric, New Japan Radio, Mitsubishi Electric, and Kyoto Univ.

Vf: ▲4VVr=27.5kV



Introduction

SiC

RC-IGBT for xEV

Conclusions



Fuji Electric Contributions to xEV

2 in 1 IPM

Production

Buck boost converter

Production

2 Inverterswith buck boostconverter

Company H：HEV/PHEV

Company T：HEV

14 in 1 IPM

ProductionPower chip by Fuji

Power chip for double side cooling system

Company D：HEV

ModuleProduction

Inverter

IPM



IGBT Module Power Density Trend

0

500

1000

1500

2000

1995 2000 2005 2010 2015 2020 2025 2030

Outp

ut

Pow

er

densi

ty [

kVA/L

]

◆

◆

◆

◆

◆

◆

＊Output Power density [kVA/L] = Max output power [kVA] / Module volume [L] in continuous

Industry

4thGen6thGen

Automotive

Company A

Company B

SiC (xEV grade)

4G-DWC

*DWC : Direct Water Cooling

3G-DWC

2G-DWC

1G-DWC

2G pin-fin

1G Cu-base

Higher power density challenge with the best integration in chip-package-thermal management engineering.



Direct water cooling (DWC) aluminum fin

to reduce Rth, pressure loss, weight, and thickness

RC-IGBT from 3G DWC

to reduce die, DCB, module area and Rth

Lead-Frame wiring from 4G DWC

to reduce size, Ls, Rth, Tjpeak, and I2t

Important Tech. for Auto. IGBT Modules



3G DWC: Cooling Performance Improved

Coolant flow speed was optimized to flow it near chip area,

resulting in Rth reduction by 30%.

Coolant flows peed

Upper Down

No clearance

Flow speed 0.05m/sec 0.1m/sec

1st generation 3rd generation

High

Low Clearance

Heat Sink

Water jacket

Cooler

Cooler

IGBT FWDRCーIGBT



RC-IGBT from 3G DWC

Cathode

Anode

IGBT FWD RC-IGBT

Collector

EmitterEmitter

Gate

p+

Collector

電流

n+

電流

p+ n+

Gate

Monolithic integration of IGBT/FWD, Additional die shrink available; Rthj-c↓↓, compact, reduce $$$



RC-IGBT from 3G DWC

Inlet

Reduction of DCB area by 25%Reduction of parasitic inductance of emitter-to-DCB wiring by 22%



MP of 3G DWC 6in1 RC-IGBT Mod Started

Flange

Inlet

Outlet

Item Value

Collector-Emitter voltage 750 V

Implemented Collector current 800 A

Saturation voltage at 175oC 1.65 V

Thermal resistance at 10L/min 0.141 oC/W

Continuous operating junction temperature 175 oC

Size 162×117×24 mm

Weight 570 g

Target to motor output power to be applied 100-150 kW

M653 is high power, light-weight, small size and ultra-thin.

Cooler

Thinner than one RMBcoin diameter !!

Cooler

24 mm



Lead-Frame Wiring from 4G DWC

Inlet

Support for large currentReduction of parasitic inductance of emitter-to-DCB

Lead-frame wiringAluminum-wire-bond wiringIEEE PEAC 2018 No Reprint Without Authorization


Lead-Frame Wiring from 4G DWC

Inlet

Reduction of Rth by 4.3%Reduction of peak chip-surface temperature



RC-IGBT + Lead-Frame Wiring from 4G DWC

Inlet

Enhancement of I2t capability by 3 times



Introduction

SiC

RC-IGBT for xEV

Conclusions



Power Density: Power Rating (Voltage x Current) / Total Chip Area

Loss: Estimated Total Power Dissipation in 400VAC General Purpose Inverter

Trend and Forecast of Power Density and Loss

of Power Device Chips

1200V chip or chip set



Thank you!

Acknowledgment

Some part of this work has been implemented under a joint research project

of Tsukuba Power Electronics Constellations (TPEC).IEEE PEAC 2018 No Reprint Without Authorization


Line-up Plan of All-SiC Modules

Package Type1B Type2B Type3LB

size 60 x 20 x 12 mm 68 x 26 x 13 mm 126 x 45 x 13 mm

Ratedvoltage

MOSGeneration

1200V1G Trench 25, 50A 75, 100A 200, 300, 400A

2G Trench Not decided Not decided ~480A *

1700V 1G Trench N/A N/A 130, 200, 260A

All-SiC modules (2in1 half bridge)

3 different packages development is proceeding. 1200V: 1G & 2G Trench MOS applied. 1700V: 1GTrench MOS applied Increase of current rating over 400A or 480A / 1200V & 260A / 1700V can

be realized by paralleling Type3LB modules.

* Current rating for 2G trench MOS is limited by terminal current capacity and may be changed.IEEE PEAC 2018 No Reprint Without Authorization


1MW Inverter: Io=1443A, VDC=800V, pf=1, m=1, Tvj=125oC

Si Module:

450A/1200V x 6 parallel

Hybrid SiC:


Full-SiC:


The Full-SiC Inverter achieves η=98.9%. Efficiency doesn‘t decrease even if the Full-SiC operates at higher frequencies,

because filter losses decrease at higher frequencies.

Efficiency of 1MW PV-PCS – 2 Level Circuit



1MW Inverter: Io=1443A, VDC=800V(400V+400V), pf=1, m=1, Tvj=125oC

Si Module:

900A/1200V(main)

900A/900V(RB-IGBT)

x 3 parallel

Hybrid SiC:

600A/1200V

x 5 parallel

Full-SiC:

400A/1200V

x 7 parallel

RB-IGBT

SiC-SBD

SiC-MOSFET/

SiC-SBD The 3 level inverter using Full-SiC achieves η=99.1%.

Efficiency of 1MW PV-PCS – 3 Level Circuit




2-level Circuit 3-level Circuit

2.6%2.3%

Efficiency of Full-SiC 2 level and 3 level inverters are improved by 2.6% and 2.3%, respectively, which higher

than those inverters using Si power devices.

Efficiency doesn‘t decrease even if Full-SiC operates at higher frequencies, because filter losses decrease

even at higher frequencies.

98.7%99.0%

Efficiency Comparison for 1MW PV-PCS




2.6%

2.3%98.7%

99.0%

Efficiency of Full-SiC 2 level and 3 level are improved by 2.6% and 2.3%, respectively, which is higher than

those inverters using Si power devices.

Efficiency of 3 level Full-SiC achieves 99.0% at 20kHz.

Future trend is expected to be 3 level topologies with Full-SiC.

Efficiency Comparison for 1MW PV-PCS



[Calc. condition]

fc=2 ~16kHz,Vcc=600V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-19%

-61%-48%-33%

Decreasing rate of

All-SiC against Si

Loss Comparison IGBT/Hybrid-SiC/All-SiC

1200V Device



[Calc. condition]

fc=2 ~16kHz, Vcc=900V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-48%

-73%-68%

-59%

Decreasing rate of

All-SiC against Si


1700V Device



[Calc. condition]

fc=2 ~16kHz, Vcc=1800V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-73%

-84%

-82%-79%

Decreasing rate of

All-SiC against Si


3300V Device



RB-IGBTs in Multi-Level Inv.

T-type 3-levelRB-IGBT AC-switch

η↗ ↗ ↗ ↗

2x1200V IGBTs

2x1200V Diodes

2x 600V RB-IGBTs

loss: 100% 85-80% 80-70% 70-60%

LC: 1 1/2 1/2 1/2

Enables high efficiency and small-size power conversion system



Dicing Surface

Carrier generationDepletion region

Negative bias

GND

N-

P+P+

P+

Active Scribe

※Carrier generation at dicing surface

Conventional IGBT

Structure of Conventional IGBT and RB-IGBT

JunctionIsolation region

Dicing

Surface

Depletion region

GND

Negative bias

P+

P+P+

N-

Active Scribe

RB-IGBT

50



Efficiency Vs Output

Item Specification

Capacity 1MW

DC Voltage 450~1000V

MPPT 460~850V

Maximum Input

Current2440A

AC Voltage 260V(-12~+10%)

Output Frequency 50/60Hz

Power Factor 0.99

THD 5%

Maximum Efficiency * 98.5%

Europe Efficiency * 98.2%

Inner Power Supply

Capacity<2000W

Standby Dissipation <200W

* According to IEC-61683, including Inner Power Supply

Application Example:Fuji PCS Product with AT-NPC Module



AT-NPC UPS Product 500kVA

Classic 2-level T-Type

With RB-IGBT installed

FUJI UPS 7000HX-T3

500kVA

η=97.1%η=95.1%

Peak efficiency improved by 2 point

Volume and weight cut down to 2/3 of 2-level

S. Takizawa et al., Proceedings of PCIM Europe 2012 pp. 296-302

52


Documents

Impact of SiC and RC-IGBT on Drive and Power Supplyconfig.peac-conf.org/ckfinder/userfiles/files/P7.pdf · Impact of SiC and RC-IGBT on Drive and Power Supply ... Source: International