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2018 2020 Research Day
Nirel Bernstein*, Bharat Grover, Binoy Hazra, Stuart Parkin, Amir Capua*[email protected]
2
Anomalous Hall effect5
1 STT-MRAM: Gen 2
* Picture from Chappert, C., Fert, A (2007)
3
4 Extrinsic: Intrinsic:Spin Hall effect
6
Spin Berry curvature
Spin Hall conductivity
Berry curvature
Hall conductivity
7Non-collinear magnetic structure
Optical FMR
8
Time
mz
PLL
-10 -5 0 5 1019
20
21
22
23
24
25
H
(O
e)
I (mA)
Positive Field
Negative Field
9Optical FMR Responses Summary
The
Hebrew
University
of
Jerusalem
הָעִבְרִית
Department of Engineering and Applied Physics
Nature, 527, pp. 212 (2015)
Pt (typical)Mn3Sn
0.1470.0028Damping
0.20.13Spin Hall angle
•Large SHE in light elements (SOC free!)
•CMOS compatible!
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•No geometrical restriction of charge current and spin currents!
•Technologically relevantly sputtering deposition
• Novel low dampingmaterial system.
Low damping materials for STT-MRAM
Electron system
of reference
Spin currentsSTT-MRAM: Gen 3
* Picture from Zhao W. (2015)Low Power
