Outgas Testing Update on EUV Light vs. Electron beamieuvi.org/TWG/Resist/2012/021212/2-20120212_IEUVI_Resist-TWG_Takahashi... · 2012/2/12 · IEUVI Resist TWG, San Jose, CA Feb

IEUVI Resist TWG, San Jose, CA Feb. 12, 2012

Outgas Testing Update on EUV Light vs. Electron beam

Toshiya Takahashi, Norihiko Sugie, Kazuhiro Katayama, Isamu Takagi Yukiko Kikuchi, Eishi Shiobara, Hiroyuki Tanaka, Soichi Inoue

EUVL Infrastructure Development Center, Inc.


Outline

2

1. Introduction : EIDEC Resist Outgassing Program

2. Exposure Tools : EUV Light and Electron beam

3. Current Status of Resist Qualification System

4. Schedule

5. First Results

IEUVI Resist TWG, San Jose, CA Feb. 12, 2012 3

EIDEC Resist Outgassing Control Program

Mission

To function as resist outgas qualification center.

To check the reliability of resist outgas qualification system by comparing EUV light and Electron beam(EB), as method.

To propose guidelines for resist material designs.

Member : FUJIFILM, JSR, SanDisk, Shin-Etsu, TOK, TOSHIBA


Tool 1: High Power EUV Exposure Tool (located in Hyogo)

4

Witness Sample

（Ru/Multilayer)

Undulater light

Resist sample

ΘーX Stages

27°

Witness Sample

（Ru/Multilayer)

Undulater light

Resist sample

ΘーX StagesΘーX Stages

27°

New SUBARU Storage Ring

Long Undulator

Undulator

Light

BL09

◆Base Pressure 2~4 E-6 Pa ◆Exposure Pressure 1~2 E-5 Pa

267mW/cm2

85mW/cm2

Exposed Wafer (200mmφ）

HERC analysis tool (High power EUV Resist Contamination)

25mmφ Exposed Area


Tool 2: EB based Tool EUVOM-9000 (located in Tsukuba)

5

EB

Resist Witness Sample

EB

Exposed Wafer (300mmφ）

Contamination Growth Measured by SE on WS

◆Base Pressure 2~4 E-6 Pa ◆Exposure Pressure 1~2 E-5 Pa


Current Status of Resist Qualification System

We are planning to start resist qualification test in Q2 2012.

6

3/b


Process Flow & Infrastructure

Contamination Growth Exposure @EUVOM-9000

Non-cleanable Film Analysis

@XPS

Contamination Film Thickness Measurement

@SE

Pre-cleaning @ #1 or #2 Cleaner

Contamination Film Cleaning

@ #1 or #2 Cleaner

Resist Coating @ ACT12

Resist Thickness Measurement

@SE

E0 Thickness Measurement

@SE

E0 Exposure @ EUVOM-9000

E0 Development & Resist Coating

@ACT12

Wafer Process WS Process

XPS

EUVOM-9000 (LTJ) with Cleaner #1

Stand Alone Cleaner #2 (EUV Technology)

SE M-2000X (J.A.Woollam)

7

Estimated throughput for qualification : 30~40 samples/month


FY 2011 2012 2013

Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4

EB based

outgas

evaluation

Correlation

EUV vs. EB

EUV based

outgas

evaluation

Tool installation

Clarifying issues for 11nmhp

Preliminary Evaluation

Procedure Fix

Tool enhancement

Non-cleanable component analysis

Collaboration

with Univ. of Hyogo

Program Schedule

1st Correlation EUV vs. EB

2nd Correlation EUV vs. EB

Criteria for 20~16nmhp

Resist Outgas Qualification

8


First Results

9


Hybrid-1

Hybrid-3

Methacrylate

PHS

0.0

2.0

4.0

6.0

8.0

10.0

5.0 6.0 7.0 8.0 9.0 10.0

Hig

h P

ow

er

EUV

(m

J/cm

2)

Low Power EUV (mJ/cm2)

Dose to Clear (E0)Low Power EUV vs. High Power EUV

Dose to Clear Comparison

10

・ Linear correlation between High Power EUV and Low Power EUV was observed.

HER

C w

ith

Un

du

rato

r

Energetiq source (10W / 2πsr)

Hybrid-1

Hybrid-3

Methacrylate

PHS

0.0

2.0

4.0

6.0

8.0

10.0

0.0 1.0 2.0 3.0 4.0 5.0

Hig

h P

ow

er

EUV

(m

J/cm

2)

EB-gun (uC/cm2)

Dose to Clear (E0)EB vs. High Power EUV

EUVOM-9000

・ Clear correlation between High Power EUV and EB was not observed. In this study, we used the resist E0 measured for each tools, respectively.

EB (uC/cm2)


Hybrid-1 Hybrid-1 (Large PAG)

Hybrid-3

Methacrylate

PHS

0

0.5

1

1.5

2

2.5

3

0 0.5 1 1.5 2 2.5 3

Hig

h P

ow

er

EUV

(n

m)

EB (nm)

Cleanable Contamination Comparison

11

Based on the obtained resist E0, linear correlation of cleanable contamination was confirmed between High Power EUV and EB.

Measured with Spectroscopic ellipsometer

High Power EUV

Electron Beam

Do

se=2

.5xE

0, A

rea=

12

inch

Dose=E0, Area=12inch

Correlation of Contamination Thickness


Non-cleanable Contamination Comparison on exposed area

12

The presences of Sulfur and Silicon were confirmed on both High Power EUV and EB samples.

Correlation of non-cleanable contamination was acceptable on exposed area.

Non-cleanable contaminations were investigated with XPS analysis.

0.0

2.0

4.0

6.0

8.0

S Si Zn F P W

6.0

1.8 <0.1 <0.1 <0.1 <0.1

0.02.04.06.08.0

S Si Zn F P W

7.1

0.9 0.2 <0.1 <0.1 <0.1

■ non-cleanable contamination

Methacrylate resist High Power EUV

Electron Beam

Res

idu

al E

lem

en

t

(ato

mic

%)

Res

idu

al E

lem

en

t

(ato

mic

%)


Non-cleanable Contamination Comparison on un-exposed area

13

A large amount of Fluorine was detected only on un-exposed area of High Power EUV sample. The presence of Fluorine was not clearly observed on un-exposed area of EB sample, in this study.

On un-exposed area, non-cleanable contaminations were also investigated.

Exposed Area

Un-exposed Area

0.0

2.0

4.0

6.0

8.0

S Si Zn F P W

6.0

1.8

<0.1 <0.1 <0.1 <0.1

5.8

2.0

<0.1

4.6

<0.1 <0.1

Exposed AreaUn-exposed Area

0.0

2.0

4.0

6.0

8.0

S Si Zn F P W

7.1

0.9 0.2 <0.1 <0.1 <0.1

7.2

0.8 0.2 <0.1 <0.1 <0.1

Res

idu

al E

lem

ent

(a

tom

ic %

)

High Power EUV

Electron Beam

Res

idu

al E

lem

ent

(a

tom

ic %

)

Methacrylate resist


Acknowledgement

This work was supported by NEDO (New Energy and Industrial Technology Development Organization).


Thank You

Documents

Outgas Testing Update on EUV Light vs. Electron beamieuvi.org/TWG/Resist/2012/021212/2-20120212_IEUVI_Resist-TWG_Takahashi... · 2012/2/12 · IEUVI Resist TWG, San Jose, CA Feb