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Power MOSFET
PTR1N60
PTD1N60
PTU1N60
PTR1N60PTD1N60PTU1N60
N-CHANNEL 600V - 8 Ω - 1A DPAK / IPAK / TO-92
TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES
(SMPS) LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
TYPE VDSS RDS(on) ID Pw
600 V600 V600 V
< 8.5 Ω< 8.5 Ω< 8.5 Ω
1 A1 A
0.4 A
30 W30 W3 W
SALES TYPE MARKING PACKAGE PACKAGING
IPAK
32
1
TO-92TO-92 (Ammopack)
1
3
DPAK
INTERNAL SCHEMATIC DIAGRAM
1N60
1N60
1N60
DPAK
IPAK
TO-92
TAPE
TUBE
BULK
2012-6-25- 1 -
PTU1N60 / PTD1N60 / PTR1N60
PTR1N60PTD1N60PTU1N60
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 1.0 0.4 A
ID Drain Current (continuous) at TC = 100°C 0.63 0.45 A
IDM () Drain Current (pulsed) 4 2.5 A
PTOT Total Dissipation at TC = 25°C 30 8 W
Derating Factor 0.24 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
TjTstg
Operating Junction TemperatureStorage Temperature -55 to 150 °C
DPAK / IPAK TO-92
Rthj-case Thermal Resistance Junction-case Max 4.16 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W
Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W
Tl Maximum Lead Temperature For SolderingPurpose
275 260 °C
Symbol Parameter Max Value Unit
DPAK / IPAK TO-92
IAR Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)
1 A
EAS Single Pulse Avalanche Energy(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
25 mJ
2012-6-25- 2 -
PTU1N60 / PTD1N60 / PTR1N60
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-sourceBreakdown Voltage
ID = 1 mA, VGS = 0 600 V
IDSS Zero Gate VoltageDrain Current (VGS = 0)
VDS = Max RatingVDS = Max Rating, TC = 125 °C
150
µAµA
IGSS Gate-body LeakageCurrent (VDS = 0)
VGS = ± 30V ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.25 3 3.7 V
RDS(on) Static Drain-source OnResistance
VGS = 10V, ID = 0.5 A 8 8.5 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max,ID = 0.5 A
1 S
CissCossCrss
Input CapacitanceOutput CapacitanceReverse TransferCapacitance
VDS = 25V, f = 1 MHz, VGS = 0 15623.53.8
pFpFpF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)tr
Turn-on Delay TimeRise Time
VDD = 300 V, ID = 0.5 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)
6.55
nsns
QgQgsQgd
Total Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 480V, ID = 1.0 A,VGS = 10V, RG = 4.7Ω
71.13.4
10 nCnCnC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)tf
Turn-off Delay TimeFall Time
VDD = 300 V, ID = 0.5 ARG = 4.7Ω VGS = 10 V(Resistive Load see, Figure 3)
1925
nsns
tr(Voff)tftc
Off-voltage Rise TimeFall TimeCross-over Time
VDD = 480V, ID = 1.0 A,RG = 4.7Ω, VGS = 10V(Inductive Load see, Figure 5)
242544
nsnsns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISDISDM (2)
Source-drain CurrentSource-drain Current (pulsed)
14
AA
VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V
trrQrr
IRRM
Reverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 1.0 A, di/dt = 100A/µsVDD = 25V, Tj = 150°C(see test circuit, Figure 5)
2293773.3
nsµCA
2012-6-25- 3 -
PTU1N60 / PTD1N60 / PTR1N60
Thermal Impedance For TO-92
Thermal Impedance For DPAK/IPAKSafe Operating Area For DPAK/IPAK
Safe Operating Area For TO-92
Output Characteristics Transfer Characteristics
2012-6-25- 4 -
PTU1N60 / PTD1N60 / PTR1N60
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Static Drain-source On ResistanceTransconductance
Gate Charge vs Gate-source Voltage Capacitance Variations
2012-6-25- 5 -
PTU1N60 / PTD1N60 / PTR1N60
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Max Id Current vs Tc Maximum Avalanche Energy vs Temperature
2012-6-25- 6 -
PTU1N60 / PTD1N60 / PTR1N60
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit ForResistive Load
2012-6-25- 7 -
PTU1N60 / PTD1N60 / PTR1N60