SiC Power Device Introduction and expected Application

Hiroshi Horibe* *KURITA Manufacturing Corporation

(Ujitawara Town Kyoto Japan)

Content

1.Introduction2.Want is SiC like?  3.Si power devices  are now on going.4.Diffence between SiC to IGBT5.SiC test in KURITA (my company)6.Summary

Introduction1.SiC power device is expected future semiconductor .

Low switching resistance , superior performance at high frequency, no problem over 200 degree C.

2.These performance will change our society.3.Reducing electric power loss – that’s it.

We have used so many converter and inverter in our life which means motor control equipment.

They say over 50% power consuming is for Motor control which is driven by high frequency inverter.Now Si power device IGBT are used most populary.

4.Not so far but not distance future – replacing the device Si to SiC can save electric power a lot.Only in Japan ,, same power saving as same as 4 electric atomic power plant.

Really ? I doubt it. But,, Listen and find out.

<my weakness and excuse>I am not expertize in this filed(SiC itself). But I am electronics engineer. I will try to introduce “SiC” power device that means expected future generation semiconductor”.

SiC ManufacturerSiC is very attractive power device.So many company now have started developing this field.I am not sure exactly but I pick up several companies.

<U.S>Cree 2-6(two six) Dow Cornig <Japan>Rohm Mitsubishi Fuji Toshiba Hoya New Japan steel <Germany>SiC crystal<China>TankeBlue Semiconductor

<note>In my presentation I mainly pick up pictures and graph from “Rohm” catalog.

What is SiC Power Device like?

Looks like similar to other Power Devices ---IGBT or MOSFETBut There are big difference.

Si IGBT1200V 200A

SiC 1200V 120A

Si MOSFET1500V 8A

SiC1200V 35A

Future of SiC : Compared with Si power device

1,Wide band gap 2,Delectric withstand voltage is high 3,Heat conductivity is high

1,Low ON resistance ------reduce power loss2,No problem at over 200 degree C ------ Cooling system can be made smaller3,High frequency running is available ------ Additional components can be smaller

Inverter PowerLoss

Expected Performance

Si IGBT SiC Power Device

Under 0.5

Power loss reduce drastically?

I talk detail about it in later slide.

Switching power loss comparison

Power device is now on going these fieldSi IGBT have being used now.

Power Plant Train Car

FactorySolar Panel

Air conditionerIce Box Washing machine

PCServer

Reducing Power Loss InverterSmaller and Lighter

Inverter Lighter Cooling system smaller

Less Power loss and smaller

Power ConditionerHigh efficiency

High efficiency Save the power

AC adapter become smaller It can be set inside the PC

So much power and heatLess loss and Save the power

To save the power or increasing the performance these devices have to be improved As written in red sentences.

So many inverter and converter in our life.All are now Silicon power device so far.Car solar panel train washing machine ICE box Air conditioner elevator light factory production line you name it

Factory Production Line

InverterConverter

Battery

MOSFETIGBT

DIODE

MotorMotor

Car Train

Solar Panel

Power ConditionerDC to AC sine wave

Chopper Inverter

Sine waveTo House use

Control is very smooth by changing frequency or pulse width. Imagine “the lift” speed upor down – our feeling without any notice. That ‘s why power devices for.

But we can not ignore there are still much power loss and hear when it switches.

Semiconductor switch is not ideal one. It produces so much heat loss when it switches.

Mechanical switch ; push button switch , breaker , relay , conductor

Almost 0 ohm

No loss no heat upCan’t operate at high frequency. 1 time / sec

ON voltage about 2 to 3V

Turn on lossV*I*1/6*pulse width*f

Turn off lossV*I*1/6*pulse width *f

Recovering current lossAt 100A switching 8mJ/pulse -- IGBT0.1mJ/pulse -- SiC

Device ON period (30kH 100kHz or so)

IGBT MOSFET SiC also Diode

Semiconductor power device

Every pulse switch power loss , energy loss are occured .5-10% power loss at Si IGBT inverter.

Voltage fall down Current rise up when it switches

ON

OFF

Conversion is needed at middle position between source to load.Converter , Inverter , Chopper and so on. =Real world so far.

Power Plant

ConversionConversion

Cnversion

Conversion

Coversion

V Changing plantTransformer

Home

Several hundreds Volt

Motor

InverterEV/HEV

Wind

Solar

DC

DC to AC AC to DC to AC

(Converter and Inverter)

Home

Air Conditioner ICE box Washing machine

Inverter

What is Conversion?

Change the voltage up or down

Change AC wave frequencyChange AC to DC orDC to AC

Can’t avoid any loss when it converts

Change to heat loss*waste of Energy*Heat spreading panel is needed*Can’ t make equipment smaller

Using SiC power device instead of Si Device , we expect reducing power drastically

Power Loss Difference between SiC to IGBTTry calculation under one condition.

Suppose one 200V 100A 3phase motor driving

200V 100A

Power device like this

Switching frequency 100kHz

At 50kHz sine wave 2000 pulses / 1 cycle

ON partPulse rise partPulse fall part

Reverse recovering part

Converter Inverter

3phaseAC power

6 devices inverter section

Difference between SiC to IGBTTurn ON lossTurn OFF lossRecovering loss

Watch out big switching time difference between SiC to IGBT.

One example of CalculationF: 100kHz Current : 100A Switching duty 0.5

Motor Power √3*200V* 100A*cosθ(0.7)=24kW

IGBT CM100DY-24NFSiC BSM1200D12P2COOS

On R loss Off F loss Recoverloss ONloss

(4.7mJ+10mJ+8mJ)*100kHz=2.2kW + 0.2kW =2.4kW--- IGBT

(2.7mJ+1.7mJ+0.1mJ)*100kHz=0.45kW + 0.35kW =0.8kW ---- SiC

1,This example is rough one. But you can see SiC switching loss is much smaller than Si IGBT. (10% is power loss : IGBT )So you see we normally can’t use IGBT at that high frequency. Normally under 30kHz.

2,High frequency using ,components related with frequency “size” and “weight”become small and light . Capacitor , inductor, transformer .

3,We also need bigger heat think when we use IGBT at normal frequency.We always say “Using power device is the same as struggling against heat which is produced from it”

Thank you to SiC much less heat loss than Si power device IGBT.

SiC Expecting performance

Practical Circuit to Motor ControlCar Train washing machine you name it

SiC Device SiC diode

DevicePower Loss

SiIGBT

Si IGBT+

SiC diode

SiC device+

SiC diode

Under 0.5

Size and Weight

4kW InverterSi device

(0.1w/cm2)

3kW InverterSiC device

(7w/cm2)

5.5kW InverterSi device(0.4w/cm2)

Power Loss decrease

Under Half size or 1/3 size must be expected.

Billion US $

To HEV SiC

The other

SiC to industry production line

SiC to UPS

SBD to Improving P.F

SBD to HEV

SBD to industry production line

SBD to UPS

It looks like so many different object .SiC will be used in near future.

Future quantities expecting data

Inverter Block diagram : our pulse modulator

Now it consist of IGBT.But We have tested SiCAs watching gate wave form.

SiC IGBT

fast slowfast slowCatalog specificationOf D-S performance

SiC IGBT

GateRise time

GateFall time

35ns 256ns

40ns 250ns

D-S performance

D-S performance

Gate rise time and fall time

SiC is faster (including delay time) than IGBT which make less switching power loss.

Transformer wish to become smaller

Heat think for device cooling

Inverter (IGBT)On heat think

Inverter

After replacing power device ------*We hope we can run high frequency running up

to 100kHz.*That makes size of this modulator smaller and

light.half size and now 19kg to under 10kg.

*We can do it in one or two years.

Summary1.Low resistance , superior performance at high frequency and high temperature SiC power device is expected reducing the power loss  that means much saving electric power.

2. There is one bad news so far.SiC device is very expensive so far. 2 years ago ten times more expensive than same Si specification device. But these day becomes lower price. But still high   price.

3.If it became 1.5 times more expensive that Si device ,,, SiC must be used spreadwidely. But not yet. May be several years later. So that means  still  Si IGBT have being  dominant .4. Again I say  same as first talking.

In  Japan  over half of electric power was consumed in Motor control  system.      Increasing efficiency this field (Inverter Converter ) by using SiC device 

‐‐‐ Only in Japanese case   4 atomic power plant energy might be saved ,, believe or not.

Thank you for attention!