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Hoja de datos para STA509
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0 2 4 10 126 8 14
ID — VDS Characteristics
0
5
4
I D (
A)
VDS (V)
3
2
1
6
0.01
1
0.1
20
10
0 1 2 3 4 5 6
ID — VGS Characteristics
I D (
A)
VGS (V)
0 1 2 3 64 5
RDS (on) — ID Characteristics
0
0.2R
DS (o
n) (
Ω)
ID (A)
0.8
0.6
0.4
–50 0 50 100 150
RDS (on) — TC Characteristics
0
0.1
0.3
0.2
0.4
RD
S (o
n) (
Ω)
Tc (ºC)
0.5
0.5 1 5 10 50
Safe Operating Area (single pulse)
0.5
0.1
1
5
I D (
A)
VDS (V)
10(Tc = 25ºC)
0.05 0.1 0.5 1 6
Re (yfs) — ID Characteristics
0.2
0.5
1
5
10
Re
(yfs
) (S
)
ID (A)
VGS = 3V
VGS = 4V
VGS = 5VVGS = 10V
VGS = 4Vtyp.
ID = 1A
VGS = 10Vtyp.
VDS = 10V
VDS = 10V
VGS = 4V
0 0.40.2 0.6 0.8 1.41.21.0
IDR — VSD Characteristics
0
8
6
4
2
I DR (
A)
VSD (V)
10
Ta = –55ºC25ºC75ºC
150ºC
10ms
1ms
100µsID (pulse) max
RDS (on)
LIM
ITED
Ta = –55ºC25ºC
150ºC
Ta = 150ºC75ºC25ºC
–55ºC
25ºC
Ta = 150ºC
75ºC
–55ºC
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 52±5Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 1mA, VGS = 0V 47 52 57
min typ max
IGSS µAµA
VGS = ±20V ±1.0
IDSS
S
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.0Re (yfs) VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A1.0
RDS (ON)ΩΩ
V
µsµsµsµsV
VGS = 4V, ID = 1.0A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 1AVDD 12VRL = 12ΩVGS = 5V
RG1 = 50Ω, RG2 = 10Ω
tr
td (off)
tf
VSD ISD = 6A, VGS = 0V
0.2 0.25
0.250.3
pFpFpF
200120 202.07.43.34.21.0 1.5
VGSS VV
±20 ±3 ±6
ID AID (pulse) *1 A
4 (Ta = 25ºC)20 (Tc = 25ºC)
PT
EAS *2
Tch
WW
150 40
Tstg ºCºCmJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω
Electrical CharacteristicsAbsolute Maximum Ratings
2
1
3
4
5
6
7
8
9
10
MOS FET Array STA509A
80
Equivalent Circuit Diagram
External Dimensions STA
a) Type No.b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.15
0±0.31.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4S G D G
5 6 7 10D G D S
8 9G D
0±0.3
