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A 60-GHz Efficiency-Enhanced On-Chip
Dipole Antenna Using Helium-3 Ion
Implantation Process
Rui Wu, Wei Deng, Shinji Sato, Takuichi
Hirano, Ning Li, Takeshi Inoue, Hitoshi
Sakane, Kenichi Okada, and Akira Matsuzawa
Tokyo Institute of Technology, Japan
1
• 60-GHz Application and CMOS On-Chip Antenna • Conventional Solutions • Proposed On-Chip Antenna using Helium-3 Ion Irradiation • Performance Comparison and Conclusions
Outline
2014-10-1 WU Rui, Tokyo Tech
2 Motivation
2014-10-1 WU Rui, Tokyo Tech
1980 1985 1990 1995 2000 2005 2010 2015
101
102
103
104
105
106
WDM
OC-192
2λ 4λ
8λ 32λ
160λ
300Gbps
Ca
pa
cit
y [
Mb
ps
]
OC-48
OC-24
OC-12
OC-3
Wireline
802.11 802.11b 802.11a
802.11g 802.11n
UWB
100 Bluetooth
PHS PDC
Millimeter-Wave
10Mbps
Wireless (PAN~WAN)
10Gbps
Contents
3 60-GHz CMOS On-Chip Antenna
2014-10-1 WU Rui, Tokyo Tech
60-GHz TX chip
Chip package
Bonding wire
Metal plate 60-GHz TX chip
Off-chip antenna:
High radiation gain
parasitic components
and loss for connection
Degrade system
performance and
design flexibility
CMOS On-chip antenna:
Much less parasitic and
connection loss
flexible design and
monolithic integration
Poor radiation gain due
to lossy substrate
4 Conventional Solutions (1/2)
• Artificial Magnetic Conductor (AMC)
2014-10-1 WU Rui, Tokyo Tech
[1] X.-Y. Bao et al., ITAP 2012
High-Z surface to prevent EM field induced in the lossy substrate Large area for AMC pattern
AM
C p
lan
e
A
A’
Antenna component(Top metal)
AMC plane(Metal 1)
SiO2
Lossy substrate
AA’
5 Conventional Solutions (2/2)
• Proton implantation
2014-10-1 WU Rui, Tokyo Tech
[2] K.-T. Chan et al., IEDM 2001
Increase substrate resistivity to prevent induced EM field
High dose amount and process cost
A
Antenna component
(Top metal)
Proton implantation
region
Lossy
sub.
A’
AA’
6 Proposed Gain-Enhanced Antenna
2014-10-1 WU Rui, Tokyo Tech
Increase substrate
resistivity (≈103Ω•cm)
Less dose amount
and process cost
Less lateral scattering
and higher reliability
Helium-3 ion irradiation
7 Helium-3 Bombardment Procedure
2014-10-1 WU Rui, Tokyo Tech
Set wafer in plate
Max 4
Wafers/Plate
Wafer Chamber
Wafer Transport Equipment
Max 139
Plates/Batch
Auto-Transport Wafers
irradiated one by one
Move plate into
chamber
Vacuum pumping
Ion irradiation
Air pumping
Move plate out of
chamber
Wafer Plate Confidential
8 Measured Resistivity versus Dose
2014-10-1 WU Rui, Tokyo Tech
1E+0
1E+1
1E+2
1E+3
1E+4
1E+12 1E+13 1E+14 1E+15
Dose (cm-2)
Resis
tivit
y (
Ω•c
m)
Helium-3
Proton
100
101
102
103
104
1012 1013 1014 1015
[3] N. Li et al., VLSI Technology 2014 [4] L.-S. Lee et al., ITED 2001
N-type substrate
9 Measured Resistivity versus Depth
2014-10-1 WU Rui, Tokyo Tech
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
0 50 100 150 200 250 300 350
Depth (μm)
Resis
tivit
y (
Ω•c
m)
w/ ion irradiation
w/o ion irradiation
100
101
102
103
104
105
10 On-Chip Antenna Configuration
2014-10-1 WU Rui, Tokyo Tech
1000 mm
A A’
30 mm
MSL
Dipole antenna element
10 mm
270 mm1
80
mm
2100 mm
21
00
mm
40 mm
SiO2
Si sub.
Al (1 μm)
40 mm 160 mm 320 mm
Ion irradiated region
11 Die Micro-photograph
2014-10-1 WU Rui, Tokyo Tech
Dip
ole
an
ten
na e
lem
en
ts
He
liu
m-3
io
n irr
ad
iate
d r
eg
ion
460 μm
12
00
μm
65 nm CMOS technology
12 Measurement Setup
2014-10-1 WU Rui, Tokyo Tech
Vector Network Analyzer
Agilent N5247A PNA-X
(10 MHz-67 GHz)
Probe Probe
Chip Tray
h=
4.0
mm
Probe Station Metal Plate
Chip Tray
R=2.5 cm
Chip
Probe Station Metal Plate
13 Measured Antenna Gain
2014-10-1 WU Rui, Tokyo Tech
-8
-6
-4
-2
0
57 59 61 63 65 67
w/o ion irradiation
w/ ion irradiation
An
ten
na G
ain
(d
Bi)
Frequency (GHz)
Depth 40μm
Depth 160μm
Depth 320μm
14 Measured S11
2014-10-1 WU Rui, Tokyo Tech
-15
-10
-5
0
57 59 61 63 65 67
w/o ion irradiation
w/ ion irradiation
S11
(d
B)
Frequency (GHz)
Depth 40μm
Depth 160μm
Depth 320μm
15 Performance Comparison
2014-10-1 WU Rui, Tokyo Tech
Ref. CMOS
Process
Type of on-chip
antenna Freq.
Antenna
gain Core area
This
work 65 nm
Dipole with helium-
3 ion irradiation 60 GHz -2.0 dBi 0.48 mm2
[1] 180 nm Circularly polarized
with AMC 65 GHz -4.4 dBi 3.24 mm2
[5] 180 nm Yagi 60 GHz -10.0 dBi 0.74 mm2*
[6] 90 nm Yagi with AMC 60 GHz -7.2 dBi 1.04 mm2
[7] 65 nm Slot loop 60 GHz -5.0 dBi* 0.64 mm2*
[8]
Post-back-
end-of-line
(10 Ω•cm)
Inverted-F 61 GHz -19.0 dBi 0.20 mm2*
Quasi-Yagi 65 GHz -12.5 dBi 0.59 mm2*
*Estimated from literature
[5] H.-R. Chuang et al., ITED 2011
[1] X.-Y. Bao et al., ITAP 2012
[6] H.-C. Kuo et al., ITMTT 2013
[7] L. Kong et al., ISSCC 2013 [8] Y.-P. Zhang et al., ITED 2005
16 Conclusions
2014-10-1 WU Rui, Tokyo Tech
• 60-GHz on-chip dipole antenna with
helium-3 ion implantation technique
• Small dose amount (3x1013 cm-2)
• Average 3-dB gain improvement across
57 GHz~67 GHz
• Peak gain of -2.0 dBi @ 60 GHz
with 0.48 mm2 area
17
Thank you very much for your attention
Q & A
2014-10-1 WU Rui, Tokyo Tech
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