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半半 半半半半 Semiconductor Materials and Device Charact erization Topic 7: time-of-flight technique and carrier mobi lity Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University

半導體量測技術 Semiconductor Materials and Device Characterization

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半導體量測技術 Semiconductor Materials and Device Characterization Topic 7: time-of-flight technique and carrier mobility Instructor: Dr. Yi-Mu Lee Department of Electronic Engineering National United University. Review and new topics:. Charge pumping method (p. 379) - PowerPoint PPT Presentation

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Page 1: 半導體量測技術 Semiconductor Materials and Device Characterization

半導體量測技術Semiconductor Materials and Device Characterization

Topic 7: time-of-flight technique and carrier mobility

Instructor: Dr. Yi-Mu Lee

Department of Electronic Engineering

National United University

Page 2: 半導體量測技術 Semiconductor Materials and Device Characterization

Review and new topics:

• Charge pumping method (p. 379)• Haynes-Shockley experiment (time of flight)• Photoelectric effect (time of flight)• Introduction to mobility• Presentation: 12/29 = 3 students

01/05 = 5 students

• Final exam: (3:00pm~5:30pm)

Page 3: 半導體量測技術 Semiconductor Materials and Device Characterization

Time-of-flight (drift mobility)

Page 4: 半導體量測技術 Semiconductor Materials and Device Characterization

QA

Page 5: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 6: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 7: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 8: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 9: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 10: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 11: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 12: 半導體量測技術 Semiconductor Materials and Device Characterization

Mobility

• MOSFET mobility

• Effective mobility

• Field-effect mobility

• Time-of-flight or drift mobility– Mobility and carrier velocity at high E-field

Page 13: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 540

Page 14: 半導體量測技術 Semiconductor Materials and Device Characterization
Page 15: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 541

Page 16: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 541

Page 17: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 541

Page 18: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 542~543

Page 19: 半導體量測技術 Semiconductor Materials and Device Characterization

Continue to study p. 545

D. K. Schroder, p. 541

Page 20: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 547

Page 21: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 548

Page 22: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 549

Page 23: 半導體量測技術 Semiconductor Materials and Device Characterization

D. K. Schroder, p. 549

Page 24: 半導體量測技術 Semiconductor Materials and Device Characterization

Continue to study p. 551

D. K. Schroder, p. 550

Page 25: 半導體量測技術 Semiconductor Materials and Device Characterization

Review suggested

• 8.4 8.5• 8.6 8.8• (in D. K. Schroder)

*You are welcome to submit the above homework to get extra bonus for your semester grade!!

**These questions are still in the range of final exam!!