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Regarding the change of names mentioned in the document, such as HitachiElectric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, andthese changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

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Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriatemeasures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas

Technology Corporation product best suited to the customer's application; they do not convey any

license under any intellectual property rights, or any other rights, belonging to Renesas Technology

Corporation or a third party.

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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

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subject to change by Renesas Technology Corporation without notice due to product improvements or

other reasons. It is therefore recommended that customers contact Renesas Technology Corporation

or an authorized Renesas Technology Corporation product distributor for the latest product information

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The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss

rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various

means, including the Renesas Technology Corporation Semiconductor home page

(http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams,

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making a final decision on the applicability of the information and products. Renesas Technology

Corporation assumes no responsibility for any damage, liability or other loss resulting from the

information contained herein.

5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device

or system that is used under circumstances in which human life is potentially at stake. Please contact

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2SK1153, 2SK1154

Silicon N-Channel MOS FET

ADE-208-1246 (Z)1st. EditionMar. 2001

Application

High speed power switching

Features

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator and DC-DC converter

Outline

12 3

TO-220AB

1. Gate

2. Drain

(Flange)

3. Source

D

G

S

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Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1153 VDSS 450 V

2SK1154 500

Gate to source voltage VGSS

30 V

Drain current ID 3 A

Drain peak current ID(pulse)*1 12 A

Body to drain diode reverse drain current IDR 3 A

Channel dissipation Pch*2 30 W

Channel temperature Tch 150 C

Storage temperature Tstg 55 to +150 C

Notes: 1. PW 10 s, duty cycle 1%

2. Value at TC= 25C

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Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1153 V(BR)DSS 450 V ID= 10 mA, VGS= 0

breakdown voltage 2SK1154 500

Gate to source breakdown

voltage

V(BR)GSS

30 V IG

= 100 A, VDS

= 0

Gate to source leak current IGSS 10 A VGS= 25 V, VDS= 0

Zero gate voltage 2SK1153 IDSS 250 A VDS= 360 V, VGS= 0

drain current 2SK1154 VDS= 400 V, VGS= 0

Gate to source cutoff voltage VGS(off) 2.0 3.0 V ID= 1 mA, VDS= 10 V

Static Drain to source 2SK1153 RDS(on) 2.0 2.8 ID= 2 A, VGS= 10 V *1

on stateresistance 2SK1154 2.2 3.0

Forward transfer admittance |yfs| 1.5 2.5 S ID= 2 A, VDS= 10 V *

1

Input capacitance Ciss 330 pF VDS= 10 V, VGS= 0,

Output capacitance Coss 90 pF f = 1 MHz

Reverse transfer capacitance Crss 15 pF

Turn-on delay time td(on) 7 ns ID= 2 A, VGS= 10 V,

Rise time t r 20 ns RL= 15

Turn-off delay time td(off) 30 ns

Fall time t f 20 ns

Body to drain diode forwardvoltage

VDF 0.9 V IF= 3 A, VGS= 0

Body to drain diode reverse

recovery time

t rr 300 ns IF= 3 A, VGS= 0,

diF/dt = 100 A/s

Note: 1. Pulse test

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Power vs. Temperature Derating60

40

20

0

ChannelDissipationPch(W)

50 100 150

Case Temperature TC (C)

Maximum Safe Operation Area

50

1 10 1,000

Drain to Source Voltage VDS (V)

20

0.5

0.01

100

DrainCurren

tID(A)

0.05

0.1

10

3 30 300

5

2

0.2

1ms

Ta = 25C

DCO

peration(TC =25

C)

PW=10m

s(1shot)

2SK11542SK1153

Operatio

nin

this

areai

slim

ited

byR

DS(o

n)

10s100s

Typical Output Characteristics

5

4

3

2

0 4 8 12 16 20

Pulse Test

1DrainCurrentID(A)

VGS = 4 V

6 V

Drain to Source Voltage VDS (V)

4.5 V

10 V

5.5 V8 V

5 V

Typical Transfer Characteristics

4

3

2

1

0 2 4 6 8 10

Gate to Source Voltage VGS (V)

5

DrainCurrentID(A)

VDS = 10 VPulse Test

25C

TC = 25C

75C

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20

16

12

8

4

0 4 8 12 16 20

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltagevs. Gate to Source Voltage

2 A

ID = 1 ADraintoSourceSatura

tionVoltage

VDS(on)(V

)

Pulse Test

3 A

50

20

10

5

0.50.2 0.5 1.0 2 10

Drain Current ID (A)

0.1

Static Drain to Source on StateResistance vs. Drain Current

Pulse Test

15 V

VGS

= 10 V

5

2

1.0

StaticDraintoSourceonS

tateResistance

RDS(on)()

5

4

3

2

1

00 40 80 120 160

Case Temperature TC (C)

40

Static Drain to Source on StateResistance vs. Temperature

VGS = 10 VPulse Test

StaticDraintoSourc

eonStateResistance

RDS

(on)() 3 A

ID = 1 A

2 A

Forward Transfer Admittancevs. Drain Current

5

2

1.0

0.5

0.05 0.1 0.2 1.0 2 5


0.1

0.2

0.5

VDS = 10 VPulse Test

75C

25C

ForwardTransferAdmittance

yfs

(S)

TC = 25C

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Body to Drain Diode ReverseRecovery Time

Reverse Drain Current IDR (A)

ReverseRecoveryTim

etrr

(ns)

1,000

500

100

50

20

10

200

0.05 0.1 0.2 0.5 1.0 2 5

di/dt = 100 A/s, Ta = 25CVGS = 0Pulse Test

Typical Capacitancevs. Drain to Source Voltage

1,000

100

10

10 10 20 30 40 50

Drain to Source Voltage VDS(V)

CapacitanceC

(pF)

Coss

Ciss

Crss

VGS = 0f = 1 MHz

Dynamic Input Characteristics500

400

300

200

100

0 4 8 12 16 20

Gate Charge Qg (nc)

DraintoSourc

eVoltageVDS

(V)

20

16

12

8

4

0

GatetoSourc

eVoltageVGS

(V)

400 VVDS

ID = 3 A

VGS

250 V

VDD = 400 V

250 V100 V

VDD = 100 V

Switching Characteristics

500

100

50

20

10

5

200

SwitchingTimet(ns)

0.05 0.1 0.2 0.5 1.0 2 5


tf

VGS = 10 V VDD= 30 VPW = 2s, duty < 1%

td (on)

tr

td (off)

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Reverse Drain Current vs.Source to Drain Voltage

5

4

3

2

1

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

ReverseDrainCurren

tIDR

(A) Pulse Test

5 V, 10 V

VGS=0, 10 V

3

1.0

0.1

0.03

0.01

0.3

10 100 1 m 10 m 100 m 1 10

Pulse Width PW (s)

chc(t) = S (t) chcchc = 4.17C/W, TC= 25C

PDM

PWT

D =T

PW

Normalized Transient Thermal Impedance vs. Pulse Width

NormalizedTransientTh

ermalImpedanceS

(t)

TC= 25C

0.05

0.02

0.2

0.1

0.5

D = 1

1Sho

tPuls

e0.0

1

Vin Monitor

Vout Monitor

RL

50

Vin = 10 V

D.U.T

.VDD= 30 V .

Switching Time Test Circuit

Vin 10 %

90 %

90 %90 %

10 %

td (on) td (off)tr tf

Vout 10 %

Wavewforms

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Package Dimensions

0.5 0.12.54 0.5

0.76 0.114.0

0.5

15.0

0.3

2.7

90.2

18.5

0.5

7.8

0.5

10.16 0.2

2.54 0.5

1.26 0.15

4.44 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1.2

7 6.4

+0.2

0.1

3.6+0.1

-0.08

Hitachi CodeJEDECEIAJMass (reference value)

TO-220ABConformsConforms1.8 g

As of January, 2001Unit: mm

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Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third partys rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachis sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductorproducts.

Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, JapanTel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Hitachi Asia Ltd.Hitachi Tower16 Collyer Quay #20-00,Singapore 049318Tel : -538-6533/538-8577Fax : -538-6933/538-3877URL : http://www.hitachi.com.sg

URL NorthAmerica : http://semiconductor.hitachi.com/Europe : http://www.hitachi-eu.com/hel/ecgAsia : http://sicapac.hitachi-asia.comJapan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.(Taipei Branch Office)4/F, No. 167, Tun Hwa North Road,Hung-Kuo Building,Taipei (105), TaiwanTel : -(2)-2718-3666

Fax : -(2)-2718-8180Telex : 23222 HAS-TPURL : http://www.hitachi.com.tw

Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower,World Finance Centre,Harbour City, Canton RoadTsim Sha Tsui, Kowloon,Hong KongTel : -(2)-735-9218Fax : -(2)-730-0281URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham RoadMaidenheadBerkshire SL6 8YA, United KingdomTel: (1628) 585000Fax: (1628) 585160

Hitachi Europe GmbHElectronic Components GroupDornacher Strae 3D-85622 Feldkirchen, MunichGermanyTel: (89) 9 9180-0Fax: (89) 9 29 30 00

Hitachi Semiconductor(America) Inc.179 East Tasman Drive,San Jose,CA 95134Tel: (408) 433-1990Fax: (408) 433-0223

For further information write to:

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