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INCHANGE Semiconductor isc Product Specification

isc websitewww.iscsemi.cn isc & iscsemi is registered trademark1

isc N-Channel MOSFET Transistor 2SK1171

DESCRIPTIONDrain Current ID=4A@ TC=25!Drain Source Voltage-

: VDSS=800V(Min)

APPLICATIONSDesigned for high voltage, high speed power switching

ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 800 V

VGS Gate-Source Voltage "30 V

ID Drain Current-continuous@ TC=25! 4 A

Ptot Total Dissipation@TC=25! 80 W

Tj Max. Operating Junction Temperature 150 !

Tstg Storage Temperature Range -55~150 !

THERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.0 !/W

Rth j-a Thermal Resistance,Junction to Ambient 35 !/W

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7/25/2019 2SK1171

2/2

INCHANGE Semiconductor isc Product Specification

isc websitewww.iscsemi.cn isc & iscsemi is registered trademark2

isc N-Channel Mosfet Transistor 2SK1171

ELECTRICAL CHARACTERISTICS (TC=25)

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 800 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V

RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A 4.5 !

IGSS Gate Source Leakage Current VGS= "30V;VDS= 0 "100 nA

IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 500 uA

VSD Forward On-Voltage IS=4A; VGS=0 1.5 V

ton Turn-on timeVGS=10V;ID=4A;

RL=25#

95 ns

toff Turn-off time 170 ns

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