0B EE235 Engineering Electronic Circuits

1BFundamentals: Analog Electronic Circuits

2B..

ii

--

(vacuum tube) .. 1947 (John Bardeen) (Walter Brattain) (William Shockley)

(solid state electronics)

(discrete device) 1958 (fabrication)(chip) (Jack Kilby) (germanium) (Texas Instrument) (Robert Noyce) (silicon) (Fairchild Semiconductor) 1960

(op-amp) (applica-tion-specific integrated circuit, ASIC)

MOSFET(metal-oxide-semiconductor field-effect transistor)

MOSFET MOSFET 1970

iii

(very-large-scale integrated circuit, VLSI) (digital signal processing)

1 (microprocessor)

(desktop computer) (laptop computer)

(nanotechnology)

(electromagnetics)(electric circuits) (electronic devices)

(deple-tion layer) pn (pn junction)

2 (analog) (frequency characteristics)

(on)(off) (inverter) MOSFET (RAM)(ROM) A/D D/A (A/D and D/A converters) (implement)(logic function)

()

2 EE235:Engineering Electronic Circuits EE331:Digital Electronic Circuits and Systems

iv

30

(lecture notes)

PSpice (circuit simulation)

2549

v

1 1 1.1 1 1.2 1 1.3 1 1.4 1 1.5 2 1 1.6 2 1.7 4 1.8 RC 7 1.8.1 7 1.8.2 15 1.8.3 RC 18 2 28 2.1 28 2.1.1 28 2.1.2 28 2.1.3 28 2.1.4 pn 28 2.2 28 2.3 28 2.3.1 28 2.3.2 28 2.3.3 34 2.4 FET 35 2.4.2 FET 35 2.4.2 MOSFET 38 2.5 43 2.5.1 43 2.5.2 44 2.5.3 FET 57

vi

3 59 3.1 59 3.2 61 3.2.1 2 62 3.2.2 1 65 3.2.3 70 3.2.4 72 3.2.5 74 3.3 75 3.3.1 75 3.3.2 77 3.4 FET 78 3.4.1 JFET MOSFET 78 3.4.2 MOSFET 81 3.5 85 3.6 86 3.6.1 86 3.6.2 90 3.6.3 94 3.6.4 96 3.6.5 3 98 3.7 FET 98 3.7.1 98 3.7.2 101 3.7.3 103 3.8 106 3.9 110

4 112 4.1 112 4.1.1 112 4.1.2 FET 115 4.2 116

vii

4.3 117 4.4 127 4.4.1 127 4.4.2 130 4.5 132 4.5.1 132 4.5.2 fch 134 4.6 PSpice 143

5 152 5.1 152 5.2 154 5.2.1 154 5.2.2 155 5.3 156 5.3.1 - 156 5.3.2 - 159 5.3.3 - 161 5.3.4 - 164 5.4 / 167 5.5 168 5.5.1 - 168 5.5.2 - 171 5.6 174

6 180 6.1 180 6.2 184 6.2.1 184 6.2.2 188 6.2.3 CMRR 188 6.2.4 189 6.2.5 195 6.3 196

viii

6.4 199 6.5 203 6.5.1 203 6.5.2 203 6.5.3 208 6.5.4 PSpice 211 6.6 214 6.6.1 214 6.6.2 216 6.6.3 217

7 222 7.1 223 7.1.1 223 7.1.2 224 7.2 225 7.2.1 225 7.2.2 227 7.3 A 228 7.4 A - 232 7.5 B - 234

8 239 8.1 239 8.1.1 239 8.1.2 241 8.2 242 8.2.1 242 8.2.2 243 8.2.3 245 8.2.4 245 8.2.5 246 8.2.6 248 8.2.7 248

ix

8.3 249 8.3.1 249 8.3.2 GB 250 8.3.3 254 8.4 258 8.4.1 258 8.4.2 A741 259

9 262 9.1 262 9.2 RC 263 9.2.1 263 9.2.2 RC 265 9.3 LC 267 9.3.1 267 9.3.2 268 9.3.3 270 9.4 271 9.5 273 9.5.1 273 9.5.2 LC 274

275

287

1

1.1 (impedance and admittance)

-- Electric Circuits

1.2 (voltage and current sources) -- Electric Circuits

1.3 (dependent sources, controlled sources) -- Electric Circuits

1.4 -- Electric Circuits

1.5 2 (2-port parameters) -- Electric Circuits

1

1 2

1.1

1.2

1.6 (amplifier) (audio system) (television) (CD player) (mobile telephone)

1.1 1~1 2~2 (voltage gain) Av (input im-pedance) Zin (output impedance) Zout

1.2 Av Zin 1~1 v1 Avv1 Zout 1.2 v1 1~1 v1 Av Avv1 Avv1 2~2 (load) 2~2( 2~2 )

2 1

Zout

Zout

+

Av Zin

Avv1 v1 v1Zin

1

1

2

v2

2

2

v2 = Avv1 (1-)

1.3

1

Avvv1

Zout

Zin +

2

1.4

1.3 1~1 2~2 RL v0 (internal impedance) 1.4

R

2

1

2

v = 0in

in

ZvZ+ (1-

2)

v2 = 1vLout

L vARZ

R+ (1-

3)

1

1

2

RL v0 +

Avvv1

Zout

Zin +

1

1 2

2

RL

v0 + v1 v2

3

(1-2)(1-3)

v2 = 0vin

in

Lout

L

ZvAZ

RZR

++ (1-4)

Av v

1.5

A0 = 0

2

vv =

))(Z( LoutinLinv

RZRZA

++ (1-5)

(1-5) Zin Zout A0 = Av RL Zin Zout 1.5

1 2

R

Av A0 (1-5)

10 [V] 10/(1103) = 10,000

2

(effective gain) Av

1.7 (decibel, dB) (transfer property) 1 [mV] 10,000 (decibel, dB)

1 +

1 2

v2

4

12

PP Ap = (1-6)

dBp

A = 10log101

2

PP [dB] (1-

7)

100,000 50 [dB]

P2

P1 =

Zout i

1.6

50 [dB] 100,000

1.6 P1

inR

21 = (1-8)

P2 =

v 21iniR

L

22

Rv = (1-9)

(1-8)(1-9)

Ap =

22LiR

1

2

PP =

L

in21

22

RR

vv =

in

L21

22

RR

ii (1-10)

(1-7) (1-10)

dBp

A = 1

2log10 P P

= 2

1

2log10

vv +

L

inlog10RR =

2

1

2log10

ii +

in

Llog10RR

= 1

2log20vv +

L

inlog10RR =

1

2log20ii +

in

Llog10RR (1-11)

(1-11)

Avvv1Rin

+

1

1 2

2

RL v1 v2

i 21

5

= 1

2log20vv =

1

2log20ii dBvA dBiA (1-12)

P2/P1, v2/v1 i2/i1 1 1 1 1

1

Av1 Av3Av2

1.7

1 v2 = 800 [mV] v1 = 1 [V] v2/v1 = 0.8

= 1

2log20vv = 20log

1000800

dBvA

1.938 [dB] (logarithm)

v1/v2

dBvA = 2

1log20vv = 20log

8001000

1.938 [dB]

3 1.7

Avt = Av1Av2Av3 dBvtA = 20logAv1 + 20logA + 20logA v2 v3

6

= dB3vdB2v AA ++ dB1vA (1-13)

dBm 1 [mW] 10 [dBm] 10 [mW] 20 [dBm] 100 [m

()

1.1

W]

0.00316* 50 10540 10 4 1/100 30 10 3 0.0316 *20 1/100 1/10 10 1/10 0 .316*

0 1 1

10 10 3.16*

20 100 10

30 103 31.6*

40 104 100

50 105 316*

* 1.1

1.8 RC (passive basic circuit element)(resistor) (capacitor) (inductor)

(ac-

ve)

(phase) RC

(integrated circuit, IC) ti (semiconductor) (amplitude)

7

8

1.8.1 (first-order lowpass characteristics) 1.8 Z CRhR RRiR

Z =

ih

11

RCj +

= ih

i

1 RCjR+ (1-14)

Rs

1.8

Gh vs vi

Gh = s

i

vv =

ih

is

ih

i

1

1

RCjRR

RCjR

++

+

= ishis

i

RRCjRRR++

=

is

ish

is

i

1

1

RRRRCjRR

R

+++

(1-15)

G0 = is

i

RRR+ (1-16)

ch = is

ish

1

RRRRC +

(1-17)

(1-15)

Gh ch

01

1

j

G+

(1-18)

Ch Ch j Ch (infinity, ) Ch = Ch

(1-18)

Ri vs vi + Ch

Z

8

Gh = G0 = is

i

RRR+

G0 (dc gain) (1-18) f = /2 Gh =

ch

01

1

ffj

G+

(1-19)

fch =

is

ish2

1

RRRRC +

(1-20)

hG = 2

ch

0

1

+

ff

G (1-21)

argGh = Gh = ch

1tanff (1-22)

(1-21) f 0 G0 f = 0 f

hG

hG

Gh (1-19) f Gh f 0 (1-21)(1-22) Gh 1.9()() 1.9() f G0 f = 0 f = fch (1-21) ( 0.707) fch = (cutoff frequency) Gh 1.9() 0 90 0 f = fch 45 1.10()() Gh 10( 10) 1.9

hG

hG

hG

hG 20G

21 hG 20G

hG

9

0 0.5fch fch 1.5fch

2fch f

0

0.5G0

20G

|Gh| G0

()

0

()

1.9

2 fch 1.10 100 fch 10( 10) 1.10 Gh 90 hG (1-21)

0

h

GG

= 2

ch1

1

+

ff

(1-23)

0 0.5fch fch 1.5fch 2fch

30

60

90

45

Gh

f

10

G

()

()

1.10

dB0

h

GG

= 2

ch1log20

+

ff [dB] (1-24)

(1-24) 10 1.11

1.11 (1-24)

- f 0 [Hz] = 0 dB0h

GG

- f = fch

102fch 101fch fch 10fch 102fch 0

0

0.5G0

f

|Gh|

20G

0

102fch 101fch fch 10fch 102fch

90

60

45

30

Gh

f

11

1.11

dB0h

GG = 2

ch

ch1log20

+

ff = 2log20 3 [dB] (1-25)

(1-25) 3 [dB] 21

- f > 3fch f >> fch

>> 1 (1-24)

dB0hGG

( 2chff )

dB0

h

GG

ch

log20ff [dB] (1-26)

A(f)

A(f) = ch

log20ff [dB] (1-27)

f >> fch dB0h GG

- (1-27) A(f)

f = fch : A(f) = 0 [dB]

f = 2fch : A(f) 6 [dB] f = 4fch : A(f) 12 [dB] f = 8fch : A(f) 18 [dB]

102fch 101fch fch 10fch 102fch 40

30

20

10

30

0

hG

[dB]

G

f

12

f fch 2fch, 4fch, 8fch,. 2 A(f) 0 [dB] 6, 12, 18, . [dB] A(f) 6 [dB] f 2 (at-tenuation) 6 dB/oct ( 6 dB per octave) - A(f) f 10

f = fch : A(f) = 0 [dB]

f = 10fch : A(f) = 20 [dB] f = 100fch : A(f) = 40 [dB] f = 1000fch : A(f) = 60 [dB] A(f) 20 [dB] f 10 20 dB/dec ( 20 dB per decade)

dB0hGG

- 0 [dB]

- f = fch 3 [dB]

- f > fch 6 dB/oct 20 dB/dec RC ( 4)

1.8 Ri = (1-16)(1-20) G0 = 1

fch = sRCh2

1 (1-28)

(1-24) dBhG

dBhG = 2

ch1log20

+

ff [dB] (1-29)

fch = 1 [kHz] (1-29) Gh (1-22) 10 1 [Hz] ~ 1 [MHz] 1.12

dBhG

13

0

()

()

1.12

10 1.12 (Bode plot)

1 10 100 1k 10k 100k 1M 60

50

40

30

20

10 3

f [Hz]

hG [dB]

6 dB/oct 20 dB/dec

0

1 10 100 1k 10k 100k 1M 90

60

45

30

Gh

f [Hz]

14

1.13

1.8.2 (first-order highpass characteristics) C C 1.13 A B Ri Cl C C (C-coupling)

1.13 vs vi

Gl = s

i

vv =

il

s

i1 RCj

R

R

++

= )(

11

1

isl

is

i

RRCjRR

R

+++

= jff

Gcl

0

1+ (1-30)

G0 = is

i

RRR+ (1-31)

fcl = )(21

isl RRC + (1-32)

(1-30)

lG = 2cl

0

1

+ff

G (1-33)

Rs

Ri vs vi

Cl

B

+

A

15

Gl = ffcl1tan (1-34)

(1-33) vs C vi f = fcl f = G0 (1-31) Gl (1-34) f 0 ~ 90 ~ 0 f = fcl Gl = 45

lG

lG

20G

Gl Rs = 0 (1-31)(1-32)

lG

G0 = 1 0 [dB]

fcl = il2

1RC (1-35)

(1-33) |Gl|

dBlG = 2

cl1log20

+ff (1-36)

fcl = 1 [kHz] Gl 10 1.14

dBlG

1.14()(1-36)

- f > fcl = 1 [kHz] G0 0 [dB] dBlG

- f = fcl = 1 [kHz]

dBlG = 2

cl

cl1log20

+

ff = 2log20 = 3 [dB] (1-37)

(1-37) 3 [dB]

- f < 0.4fcl = 400 [Hz] f > 1 (1-36)

dBlG

dBlG ffcllog20 (1-38)

16

lG

()

()

1.14

B(f ) = ffcllog20 (1-39)

f

f = 10 [Hz] : B(f ) = 40 [dB] f = 20 [Hz] : B(f ) 34 [dB] f = 40 [Hz] : B(f ) 28 [dB] f = 80 [Hz] : B(f ) 22 [dB] 10, 20, 40, 80,.[Hz] 2 B(f ) 6 [dB] B(f ) 6 dB/oct f

Z1

Z2 v2

1.15

1.16

() v2 Z2 C

RC

(1) (high-boost circuit)

1.16 R C () G =

1

2

vv =

211

1

2

1R

RCjR

R

++

= 21121

112 )1(RRCjRR

RCjR

+++

=

21

211

11

21

2

1

1

RRRRCj

RCjRR

R

++++

(1-41)

2

10

1

1

ffj

ffj

G+

+ (1-42)

v1

v2 R2 Cl

R1

v1

19

G0 = 21

2

RRR+ (1-43)

f1 = 112

1RC (1-44)

f2 =

21

2112

1

RRRRC +

(1-45)

R1 > R1R2/(R1+ R2) f1 < f2

2

1

ff =

21

2

RRR+ = G0 (1-46)

(1-42)

G = 2

2

2

10

1

1

+

+

ff

ff

G (1-47)

dBG = 20logG0 +

+

2

11log10

ff

+

2

21log10

ff (1-48)

(1-48) f1 = 100 [Hz] f2 = 10 [kHz] (1-46)

G0 = 10000100 =

1001

= 20logG0 = 40 [dB] (1-49) dB0G 1.17 40 [dB] f1 = 100 [Hz] 20 dB/dec 0 [dB] f2 = 10 [kHz]

dBG

20

1.17

dBG dBG

G [dB]

1 10 100 1k 10k 100k 1M

40

30

20

10

0

6 dB/oct 20 dB/dec

f [Hz]

1.17

3 f < f1 f1 < f < f2 f > f2 f1 = 100 [Hz] f2 = 10 [kHz]

- f < f1 :

(1-48) f > 1 (f/f2)2 >> 1

21

dBG 20logG0 + 1

2log20ff = 0 [dB] (1-52)

0 [dB] R1

1.18

3 (1-50), (1-51) (1-52) RC (asymptotic plot) 100 [Hz] 40 [dB] 3 [dB] 10 [kHz] 0 [dB] 3 [dB]

dBG

dBG dBG

dBG

(2) (low-boost circuit)

1.18 R C ()

G = 1

2

vv =

221

22

1

1

CjRR

CjR

++

+

= )(1

1

212

22

RRCjRCj++

+

1

2

1

1

ffj

ffj

+

+ (1-53)

f1 = (1-54) )(21

212 RRC + f2 =

2221

RC (1-55)

v2

R2

v1 C2

22

(1-54)(1-55) f1 < f2

2

1

ff =

21

2

RRR+ (1-56)

(1-53)

G = 2

1

2

2

1

1

+

+

ff

ff

(1-57)

dBG =

+

2

21log10

ff

+

2

11log10

ff (1-58)

(1-58) 3 f < f1 f1 < f < f2 f > f2

- f < f1 :

(1-58) f > 1 (f/f2)2 >> 1

dBG 2

1log20ff (1-61)

20log(f1/f2) [dB]

23

(1-58) f1 = 100 [Hz] f2 = 10 [kHz]

0

1.19

2

1

ff =

21

2

RRR+ = 100

1 (1-62)

1.19

1.19 0 [dB] 100 [Hz] 0 [dB] 100 [Hz] 20 dB/dec 10 [kHz] 40 [dB] f f2 100 [Hz] 0 [dB] 3 [dB] 10 [kHz] 40 [dB] 3 [dB]

dBG dBG

dBG

(3) (bandpass circuit)

1.20

1 10 100 1k 10k 100k 1M

40

30

20

G [dB]

6 dB/oct 20 dB/dec

10

f [Hz]

24

G = 1

2

vv =

22

11

22

111

11

CjR

CjR

CjR

+++

+

1.20

= 1)1)(1(

1

221

1 +++ CjRCjR

= 12

211

2

2

1 11

1

RCjRCjC

CRR ++++

(1-63)

3 (low cutoff frequency) (high cutoff frequency) (passband) (stopband)

1.20 f1 f2 f1 > C2 (1-63) C2/C1

G 12

212

1 11

1

RCjRCjR

R +++

v2 R2 v1 C2

R1 C1

25

=

21

212

211

21

2

)(11

1

RRRRCj

RRCjRR

R

+++++

=

2

1

0

1ffj

jffG

++ (1-64)

G0 = (1-65) 21

2

RRR+

f1 = )(21

211 RRC + (1-66)

f2 =

21

2122

1

RRRRC +

(1-67)

(1-64) G =

21

2

0

1

+

ff

ff

G (1-68)

dBG = 20logG0

+

21

21log10

ff

ff (1-69)

(1-68) 0

G

ff

ff 12 = 0

f = f0 = 21 ff (1-70)

G0 f0 (center frequency) G

f1 > f/f2 , 1 (1-69)

dBG = 20logG0 + 1

log20ff (1-71)

26

20logG0 f1 20 dB/dec

- f1 < f < f2 :

f f1 f1/f , 1 (1-69)

dBG = 20logG0 2

log20ff (1-73)

20logG0 f2 20 dB/dec (1-69) f1

1.21

6 [dB] f1 = 10 [Hz] f2 = 100 [kHz] 3 [dB] f0 1 [kHz] (1-70)

dBG

dBG

28

28

2

2.1 (semiconductor) 2.1.1 (intrinsic semiconductor)

-- Electronic Devices 2.1.2 (extrinsic semiconductor) -- Electronic Devices 2.1.3 -- Electronic Devices 2.1.4 pn (depletion layer) -- Electronic Devices

2.2 (diode) -- Electronic Devices

2.3 (bipolar transistor) 2.3.1 -- Electronic Devices

2.3.2 (1) (active) (bias)(power supply) npn pnp 2.1 3 E (emitter) B (base) C (collector)

29

() npn () pnp

2.1

() npn () pnp

2.2

(2) (quiescent state) (direct current, dc) 2.2 (common base) npn pnp (forward bias) (reverse bias) npn pnp npn pnp 3

IE = IB + IC (2-1)

IC = 0IE (2-2) IB = (10)IE (2-3) 0 (common-base current gain) 1 0.98, 0.99 0.995 (2-2)

E C

B

VBE VCB

IB

IE IC E C

B

VCB VBE

IB

IE IC

E C

B

E C

B

30

() IEVBE () ICVCB

2.3

2.3 2.3() IE VBE -(forward) IE VBE

IE = IS )1( BE VkTq

e (2-4)

q : = 1.610-19 [C]

k : (Boltzmans constant) = 1.3810-23 [J/K]

T : [K]

IS : (saturation current)

q/kT VT = kT/q VT (thermal voltage) 27C(300 [K]) VT 26 [mV] 2.3() IC VCB IE

- VCB > 0 IC IE () VCB IC IE

- VCB = 0 IC barrier potential 0 IC = 0 VCB < 0

0.2 0.4 0.6 0.8 0

2

4

6

8

10

VBE [V]

IE [mA]

ICO

IE = 10

IE = 8

IE = 6

IE = 4

IC [mA]

IE = 2 mA

10

0 2 4 6 8 10 12 VCB [V]

1

8

6

4

2

31

() npn () pnp

2.4

barrier potential

- IE = 0 IC ICO IC VCB (reverse bias) (leakage current) ICO ICO ICO ICO

(3)

2.4 (common emitter) npn pnp IB IC (2-2)(2-3)

B

C

II =

0

0

1

IC = 0

0

1 IB = 0IB (2-5)

0 = 0

0

1 (2-6)

0 (common-emitter current gain)

C

E

B VBE

VCEIB

IC

IE

E

C

B

VBE

VCE IB

IE

IC

32

2.5

2.5 IC VCE IB 3 (saturation region) (active region) (cutoff region) (breakdown region) VCE > VBR VBR (breakdown vol-tage) ICVCE IB2>IB1 VK(knee voltage) (saturation region)(active region) VBR(breakdown voltage) VCE VCE > VBR ICVCE IB VK VBR IB1> 0 VK VBR ( VK < VCE < VBR) IB0 (cutoff)(off) (Digital Electronics)

2.6 2.6() IB VBE IEVBE 2.3() 2.6()

IB0=0

VCE

IB1>0

IB2>IB1

IC

VK VBR

active region

saturation region

cutoff region

breakdown region

33

() IBVBE () ICVCE

2.6

2.7

ICVCE IB (depletion layer) 0 0 0 (2-6) IC VCE

ICVCE 2.7

0.2 0.4 0.6 0.8 0

20

40

60

80

100

VBE [V]

IB [A]

IC [mA]

0 4 8 12 16 200

IB=20 A 4

8

12

16

VCE [V]

IB=40

IB=60

IB=80

IB=100

IB=120

IB=140

VA 0 VCE

IC

IB1

IB4

IB3

IB2

IB6 IB5

34

() ()

2.8

VA VCE VA (Early voltage) (Early effect) (2-2)(2-4) IC VA

IC = 0IS

+

A

CE11BEVVe

VkTq

(2-7)

VA 50~100 [V]

2.3.3 2.8 B-E VBE = 0.6 [V] B-C VCC = 20 [V] 2.8() IE = 1.5 [mA] 0 1 IC = 0IE IE = 1.5 [mA] V2 = RCIC = 5k 1.5mA = 7.5 [V] VBE V1 = 0.01 [V] VBE VBE + V1 2.8() V1 VBE IE IE IE + IE IE = 0.5 [mA] IC IE IC + IC = 1.5 + 0.5 = 2.0 [mA] IC RC V2 + V2 = RC(IC + IC) = 5k(1.5mA + 0.5mA) = 7.5 + 2.5 = 10 [V]

V1 = 0.01 [V] V2 V2 + V2 V2 = 2.5 [V] 2

Av = 1

2

VV

=

01.05.2 = 250 (2-8)

E C

B

VBE 0.6V

VCC 20V

IE IC

RC5k

V2

E C

B

VBE

VCC 20V

IE+IE

RC 5k V2+V2

V1

IC+IC

35

2.9

VBE = 0.6 [V] VCC = 20 [V] (operating point) VBE = 0.6 [V] (quiescent state) V1, IE, IC V2 (alternating current, ac) (small signal) v1, ie, ic v2 (2-8)

Av = 1

2

vv = 250 (2-9)

3

2.4 FET(field-effect transistor) 2.4.1 FET (junction FET, JFET) 2.9 JFET S (source) G (gate) D (drain) (channel) ID JFET 2.9 n JFET n (n channel) n p pn pn (depletion layer) n barrier potential 0 p n

JFET n G S (VGS0)

p+

p+

nS D

G

VGS VDS

ID

depletion layer channel

36

() n () p

2.10 JFET

VGS ID

JFET n VGS VGS 0 VGS ID VGS ID VGS VGS = VP ID VP (pinchoff voltage) JFET n VGS 0 > VGS > VP VGS JFET p n p ID VGS, VP, VDS JFET n

2.10() () JFET n p VGS VGS ID

ID = IDSS2

1

P

GS

VV (2-10)

IDSS (saturation current) VGS = 0 VDS 2.11() ID VGS (2-10) n VP = 3 [V], IDSS = 4.5 [mA] VDS = 10 [V] 2.11()

G

D

S

VDS

VGS

ID

G

D

S

VDS

VGS

ID

37

() ID-VGS () ID-VDS

2.11

2.12

ID-VDS VGS VGS ID 2.12 ID-VDS VGS = 0 JFET 3 0 < VDS < VSAT (ohmic region) VSAT < VDS < VBR (saturation region) VDS > VBR (breakdown region) VSAT

VSAT = VGS VP (2-11) ID VGS VDS ID-VDS 2.11() VDS

VGS = 0 IDSS

0 VSAT VDS [V] VBR

ID [mA]

ohmic region

saturation region

3 2 1 0 0 1

1

2

3

4

5

VGS [V]

VDS = 10 [V] 5

ID [mA]

2.5 2.0

VGS = 0 V

0.5

1.0

1.5

0 2 4 6 8 10 12 VDS

0

4

3

2

1

38

2.13

ID VDS channel length modulation

ID = IDSS(1 2P

GS )VV (1 + VDS) (2-12)

channel length modulation parameter [V-1] VA

2.4.2 MOSFET (metal-oxide-semiconductor FET) MOSFET 2 (enhancement) (depletion)

(1) MOSFET

2.13 MOSFET n G1 (metal) (SO2, sili-con oxide) p (substrate) -- (metal-oxide-semiconductor, MOS) (well) n 2 n n-p-n VGS = 0 ID VGS VGS > 0 (minority carrier)p VGS VGS VT (threshold voltage) n p n electron inversion layer

p

n+

S DG1VGS

VDS

ID

electron inversion layer (n channel)

n+

G2(substrate)

metal SiO2

depletion layer

39

() () 2.14

VGS>VT n-n-n

G2 n (isolation) n p

2.14() ID-VGS 0 VT ID

ID = Kn(VGS VT 2) (2-13) Kn conduction parameter [A/V2] G1

Kn = LtW

ox

oxn

2 (2-14)

n : (mobility) inversion layer ox : (permittivity) tox : W : L :

2.14() ID-VDS VGS

VGS5 > VGS4

VGS5 > VGS4

VGS4 > VGS3

VGS3 > VGS2

VGS2 > VGS1

VGS1 > VT = 0

0 VDS

ID

VSAT

ohmic region

saturation region

0 VT

VDS : ID

VGS

40

() ()

2.15

VGS5>VGS4 VDS = VSAT VDS>VSAT VSAT

VSAT = VGS VT (2-15) VSAT VGS VT (2-15) VGS VSAT VGS VSAT VSAT ID-VDS ID-VDS

ID-VDS 2.14() VDS channel modulation (1-12) (2-13)

ID = Kn(VGS VT 2) (1 + VDS) (2-16) channel-length modulation parameter MOSFET p n p VSG VSD VT

ID = Kp(VSG + VT 2) (2-17)

VSAT = VSG + VT (2-18)

ID (2-17)

D

p

n+

S G1 VGS

VDS

ID

n-channel

n+

G2

metal SiO2

depletion layer

IDSS

VT

VDS :

ID

VGS 0

41

2.1

channel length modulation

ID = Kp(VSG + VT 2) (1 + VSD) (2) MOSFET

MOSFET n VGS = 0 n-p-n ID MOSFET n 2.15() n n-n-n VDS ID VGS = 0 VGS ID VGS VT ID 2.15() ID-VGS

(3) MOSFET

2.1 MOSFET G2 G2 (isolation)

MOSFET

G1 G2

D

S

n

p G1

G2

D

S

G1G2

D

S

G1G2

D

S

G1

D

S

G1

D

S

G1

D

S

G1

D

S

42

() ()

2.16

MOSFET n G2 MOSFET p G2

MOSFET MOSFET n VGS VDS n n p (hole) n MOSFET NMOS PMOS n p

(4) CMOS

CMOS complementary MOS NMOS PMOS 2.16() (inverter) 2.16() VDD= 5 [V] vi 0~5 [V] vi = 0 NMOS (off) PMOS (on) vo = VDD = 5 [V] 0 5 [V] vi = 5 [V] NMOS PMOS vo = 0 vo vi 2.5 [V] 2.16()

vo [V]

vi [V]

5

2.5

2.5 5 0

D

S

S

vi vo

+VDD

NMOS

PMOS

43

() npn () pnp

2.17 () npn () pnp

2.18

2.5 2.5.1 (1) 2.17()() npn pnp pn 2 0 npn pnp 2.18()() B rb B rb rb rb 50~500 [] D1 D2 0IE IE ICO (2) 2.3.2

(2) FET

FET

n n p

B

E C p p n

B

E C

E C

B

D1 D2

IE IC

IB

ICO

0IE

rb

B E C

B

D1 D2

IE IC

IB

ICO

0IE

rb

B

44

2.5.2 (compact disc, CD) (audio amplifier) (CD player) (speaker) (play)

(composite signal) (small signal) 3 (small-signal equivalent circuit)

(1)

2.19() D V0 (forward) V0 D (V0>0.6~0.7 [V]) IDQ VDQ

V0 = VDQ + RIDQ (2-19)

V0 V0 IDQ + ID VDQ + VD 2.19()

V0 + V0 = VDQ + VD + R(IDQ + ID) (2-20) (2-19)(2-20)

V0 = VD + RID (2-21) (2-21) (2-19) 2.19() (principle of super- position)

45

() ()

() ()

2.19

(2-19)(2-21) V0, VD, ID

(2-21)

V0 = D

D

IV ID + RID (2-22)

VD/ID rD

V0 = rDID + RID (2-23) 19() V0, VD, ID v0, vD, iD (2-23)

v0 = rDiD + RiD (2-24)

19() v0, vD, iD

D

VDQ IDQ

V0 R

D

VDQ+VD IDQ+ID

V0

RV0

VD IDrD

RV0

iD vD

rD

Rv0 +

46

2.20

V0, VDQ, IDQ v0, vD, iD 19() 19()

rD IDVD 20

ID = IS( DV

kTq

e 1) (2-25)

D

D

VI

= DS

VkTq

eIkTq (2-26)

(2-15) VD = VDQ DQV

kTq

e >> 1

IDQ = IS QDV

kTq

e (2-27)

(2-26)(2-27)

D

D

VI

= DQIkT

q (2-28)

IDVD 2.20 V0 VDQ IDQ V0 V0 + V0 VD ID VD/ID rD (VD, ID 0)

D

1r

= D

D

VI

(2-29)

(2-28)(2-29)

rD = DQ

1Iq

kT (2-30)

0 VDQ

ID

VD

IDQ

VD

IDQ

P

ID=IDQ

ID=IDQ

47

() ()

2.21

27C(T = 300 [K]) kT/q 0.026 [V] (2-30)

rD = DQ

026.0I

[] (2-31)

rD = [mA]26

DQI [] (2-32)

(2-31)(2-32) IDQ = 1 [mA] rD = 26 [] IDQ = 2 [mA] rD = 13 [] (2)

2.21() pnp pn 2.18() D1 IE D2 D1 D2 re rc D1 D2 re (2-30)

re = E

1Iq

kT (2-33)

re = E

026.0I

[]

= [mA]26

EI [] (2-34)

27C rc D2 5~10 [M]

E C

B

re

ic

ib

rc

ie

rb

B ie

E C

B

ie ic

ib

48

() ()

2.22

2.21() (dependent current source) ie ie 0 ie, ib ic T npn pnp

RL 2.22() rc>>RL, rb rc RL rb rc rc 2.22()

(3)

2.23() npn 2.21() 2.23() ie ib ib

2.23() B C 2.24()

ie = ib + ic (2-35)

E C

B

re

ie ic

ib

rc

ie

rb

B

RL

E C

B

re

ie ic

ib

ie

rb

B

49

() ()

2.23

() ()

() ()

2.24

ie ie 2.24()(2-35) 2.24() vBC vBC = rc(ib+ic) + rcic = (1)rcic rcib (2-36) (2-36) vBC 2.24() 2.24() 2.24() 2.24() rcib 2.24() =

1 (2-37)

2.24() B C

C

E

B ib

ic

ie

B C

E

rb

ic

ie

rc

ie

re

B ib

C

ic

rc

ie

vBC

B C ic

rc

(ib+ic)

vBC

B

C

ic (1)rc rcib

vBC

B + C ic

(1)rc

ib

vBC

B

50

() ()

2.25

() ()

2.26

2.25() ib ib (1)rc re (1)rc (1)rc 2.25()

2.25()() T (1)rc 2.25() (1)rc 2.25() 2.26() (hybrid-) 2.25() r gm

2.25() rb ib ib ib (1+)ib re re (1+) rb

B C

E

rb ic

ie

(1)rc

ib

re

B ib B C

E

rb ic

ie

ib

re

B ib

B rb

v gmv

ib

r

C

E

ic B

v gmv

ib

r

C

E

ic

51

rb+(1+)re 2.26() rb+r r = (1+)re (2-38) v = (1+)reib (2-39) ic = gmv = gm(1+)reib (2-40) 2.25() 2.26() ic (2-40) 2.25() gm(1+)reib = ib gm =

e

11 r

+ =

er (2-41)

gmr = er (1+)re = (1+)

= 1 = (2-42)

r = (1+)re >> rb rb 2.26() rb 2.26()

2.6() IC-VCE IB ( VK

52

() ()

2.27

2.3.2 (3) IC (2-7) (2-7)

CE

C

VI

=

AS0

1)1( BEV

eIV

kTq

(2-44)

VCE/VA

53

2.28

(4) h

2 (input port)(output port) 2 (2-port network) 2 2.28 1-1 2-2 v1, v2 i1, i2 2 (2-port parameters) h (hybrid parameters) 2 v1 i2 i1 v2

v1 = h11i1 + h12v2 (2-47)

i2 = h21i1 + h22v2 (2-48)

h11 h12 h21 h22

h11 = 01

1

2 =viv : (2-49)

h21 = 01

2

2 =vii : (2-50)

h12 = 02

1

1=ivv : (2-51)

h22 = 02

2

1=ivi : (2-52)

(specification) h h

i1 1

1

2

2 v1 v2

i2

54

() () 2.29

2.30

2.29() 2 h (2-47)(2-48)

vbe = hieib + hrevce (2-53)

ic = hfeib + hoevce (2-54)

2.29()

h 2.29() h (2-49)~(2-52) h 2.27() 2 vbe, ib vce, ic 2.30

hie hfe (2-53)(2-54) vce = 0 hie hfe 2.30 vbe 2.31 ro vbe = (rb + r//rc)ib

C

E

B ib

ic

vbe vce hfeib hrevce

E

B

ib

vbe

C

ic

oe

1h

+ vce

hie

B

gmv

ib

r v

C

E

ic

ro

rc rb

vce vbe

55

2.31

hie = 0b

be

ce =viv = rb + r//rc

= rb + c

c

rrrr+ (2-55)

rc>>r

hie rb + r (2-56) hfe 2.31 vce

v = c

c

rrrr+ ib (2-57)

irc = c

rrr+ ib (2-58)

ic = gmv irc (2-59) (2-57)(2-58)(2-59)

ic = gmc

c

rrrr+ ib c

rrr+ ib

= c

rrr+ (gmrc 1)ib

hfe = 0b

c

ce =vii =

c

rrr+ (gmrc 1) (2-60)

rc>>r gmrc>>1

hfe gmr = (2-61) hre hoe ib = 0 2.30 vce 2.32

B

gmv

ib

r v

C

E

ic

ro

rc rb

+ vbe vce= 0

irc

56

2.32

vbe = v = c

rrr+ vce

hre = 0ce

be

b =ivv =

c

rrr+ (2-62)

rc>>r

hre c

rr (2-63)

ic

ic = o

ce

rv +

c

ce

rrv+ + gmv

= o

ce

rv +

c

ce

rrv+ + gm c

rrr+ vce

= (o

1r

+ c

1rr + + c

m

rrrg+ )vce

= (o

1r

+ c

1rr +

+ )vce

hoe = 0ce

c

b =ivi =

o

1r

+ c

1rr +

+ (2-64)

(r+rc)>>(1+) hoe

o

1r

(2-65)

h T 2.23()

re = oe

re

hh (2-66)

rb = hie oe

re

hh (1 + hfe) (2-67)

B

gmv

ib= 0

r v

C

E

ic

ro

rc rb

+ vce

vbe

57

rc = oe

fe1h

h+ (2-68)

= fe

fere

1 hhh

++ (2-69)

2.5.3 FET 2.5.1 (2) FET

ID VGS VDS ID VGS VDS

ID = f(VGS, VDS) (2-70)

dID ID VGS VDS VGS VDS dVGS dVDS (2-70) dID

dID = DSDS

DGS

GS

D dVVIdV

VI

+ (2-71)

gm = GS

D

VI

,

d

1r

= DS

D

VI

(2-72)

(2-72)(2-71)

id = gmvgs + d

1r

vds (2-73)

ig = 0 (2-73) 2.33() 2.33()

A = gmrd (2-74)

gm, rd A (mutual conductance) (drain resistance) (voltage gain)

gm rd FET JFET n 2.4.1 (2-10)

58

() ()

2.33

gm = GS

D

VI

= 2IDSS(1

P

GS

VV )(

P

1V

)

= )(

2P

DSS

VI (1 P

GS

VV ) (2-75)

VGS VP gm

gm = P

DSS2VI (1

P

GS

VV ) (2-76)

n p (2-12) VGS

rd = 1

DS

D

VI =

2

P

GSDSS )1(

1

VVI

= D

1I (2-77)

MOSFET n (2-13)(2-16)

gm = GS

D

VI

= 2Kn(VGS VT) (2-78)

rd = 1

DS

D

VI =

D

1I (2-79)

MOSFET p (2-17)

gm = GS

D

VI

= 2Kp(VSG + VT) (2-80)

rd (2-79)

G

gmvgs vgs

D

S

id

rd vds

ig G

Avgs vgs

D

S

id rd

vds

ig

+

59

3

3.1 3.1() a1(t) a2(t)

a1(t) = AQ (3-1)

a2(t) = Amsint (3-2) a1 AQ a2 Am AQ a1 + a2 a2 AQ 3.1() Am AQ AQ Am AQ + a2 AQ a2

60

() ()

3.1

() () ()

3.2

AQ + a2 AQ a2

3.2() V1 D (conduct)(on) I1 V1 I1 3.3() Q0 V1 I1 Q0 (operating point)

v1 V1 I1+i1 3.2() v1 V1 3.3() v1 V1

Am 0 t

AQ

a(t)

a1(t)

a2(t)

0 t

AQ

a(t) a1(t)+a2(t)

AQ+Am

AQAm

D

I1

V1 D

I1+i1

V1

v1 + rD

i1

v1 +

61

() ()

3.3

i1 I1 Q1 Q2 3.2() 3.2()

i1 = D

1

rv (3-3)

rD 3.3() (2-30) 2

rD = 1

1Iq

kT (3-4)

3.2() (small-signal equivalent circuit) 3.2()

3.2

V

I

V1

I1 Q0

I

V V1

I1 Q0

Q1

Q2

V1+ v1

I1+ i1

62

() ()

3.4

3.2.1 2 () 3.4() VEE VCC RE VEE IE RC (load) 3.4() () 3.4()

E-B-B VEE = REIE + VBE + rbIB = REIE + VBE + rb{(1 0)IE ICO} IE =

b0E

CObBEEE

)1( rRIrVV

++ (3-5)

ICO (1 0)rb

63

3.5

VEE VCC VBE ( 0.6~0.7 [V]) IE (3-6) RE IE IC = 0IE IE VCB (3-8) RC IE, IC VCB

3.5 IC-VCB 2 (3-8)

VCB = VCC RCIC (3-10) IC-VCB (3-10) VCB= 0 IC = VCC/RC A IC= 0 VCB= VCC B A B A-B 3.5 (load

0 VCC VCB

C

CC

RV

VCC/2

A

B

Q

Q

IE6

IE5

IE4

IE3

IE2

IE1

load line

(a)

(a)

(b)

(b)

ic

vcb

VCBIC

IC

64

line) 1/RC IE IC VCB (3-7)(3-9) IC VCB A-B (loci)(VCB, IC) IE

IE IE3 Q VCB= VCC/2 ie () 3.4() ic vcb Q ic vcb ie ie ic vcb (a) 3.5 (a) ic vcb IE RE (3-6) RE IE Q A RE IE Q B

IE Q B Q (VCB, IC) VCB VCC VCB VCC VCCVCB IC ie ic vcb IC VCCVCB ic vcb (clip) ic vcb (b) (signal distortion) Q

VBE IEVBE 2.3() VBE > 0.6 [V] IE VBE > 0.6 [V] IE VBE VBE VBE = 0.6 ~ 0.7 [V] (Si)

65

() ()

3.6

3.1 3.4() VCC = 10 [V],VEE = 5 [V], RC = 5 [k], 0 = 0.99 VBE = 0.7 [V] RE VCB = VCC/2 VCB = VCC/2 VCC = 10 [V] RC = 5 [k] (3-8)

2CCV = VCC RCIC

IC = C

CC

2RV =

k5210 = 1 [mA]

IE = 0

C

I =

99.0mA1 1 [mA]

VEE = 5 [V], VBE = 0.7 [V] (3-6)

RE = E

BEEE

IVV =

mA17.05 = 4.3 [k]

3.2.2 1 () 3.6() VCC R1 R2 VCC 3.6() +VCC (ground) VCC, R1 R2 3.7() 3.7() VBB RB 3.7() VBB RB

R1

Q

R2

RC

RE

VCC IB

IE

IC

VC

R1

Q

R2

RC

RE

+VCC

IB

IE

IC

VC

66

() () ()

3.7

VBB = CC21

2 VRR

R+ (3-11)

RB = R1//R2 = 21

21

RRRR+ (3-12)

3.7() 3.6() 3.8 2 ICO ICO

IC = 0IE + ICO 0IE (3-13) IB = IE IC = IE (0IE + ICO) = (1 0)IE ICO (1 0)IE (3-14) (2-2)(2-3) 2

VBB VBB = RBIB + VBE + REIE IB (3-14) IE

IE = B0E

BEBB

)1( RRVV+

(3-15)

IE (3-15) IC IB (3-13)(3-14)

R1

R2

+VCC

VBB

R1

R2VCC VBB

RB

VBB

67

3.8

VE = REIE (3-16)

VB = VBE + REIE (3-17)

VC = VCC RCIC (3-18) VCB = VCC RCIC VB (3-19) VCE = VCC (RE + 0RC)IE (3-20) VBE IB-VBE 2.6() 2 0.6~0.7 [V]

3.2 3.9 VBE = 0.6 [V], 0 = 0.99

(3.11)(3.12) VBB RB

VBB = 10k10k40k10 + = 2 [V]

RB = k10k40k10k40

+ = 8 [k]

(3-15) IE

IE = k8)99.01(k5.16.02

+ = 0.886 [mA]

IC = 0.990.886 = 0.877 [mA] IB = (1 0.99)0.886 = 8.86 [A]

+VCC

RB

VCB

IE

IC

IB

ICO 0IE rb B

VBE VBB

RC

RE

VCE

VC

VB VE

68

3.9

VE = REIE = 1.5k0.886mA = 1.33 [V] VB = VBE + VE = 0.6 + 1.33 = 1.93 [V]

VC = VCC RCIC = 10 5k0.877mA = 5.62 [V] VCB = VC VB = 5.62 1.93 = 3.69 [V] VCE = VC VE = 5.62 1.33 = 4.29 [V] PSpice Spice Simulation Program with Integrated Circuit Emphasis (University of California, Berkeley)

3.2 3.9

R1 1 4 40K R2 1 0 10K RE 3 0 1.5K RC 2 4 5K Q 2 1 3 MOD1 VCC 4 0 DC 10V .MODEL MOD1 NPN (IS=0.8E-13 VA=100 RB=400 BF=99) .OP .END

IB Q

2

RE 1.5k

1

0 IE

IC

VC

RC 5k R1 40k

R2 10k

3

4 +VCC 10V

VCB

VBEVCE

VE VB

69

**** BJT MODEL PARAMETERS ****************************************************************************** MOD1 NPN IS 80.000000E-15 BF 99 NF 1 VAF 100 BR 1 NR 1 RB 400 ******************************************************************************

NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE NODE VOLTAGE ( 1) 1.9315 ( 2) 5.6060 ( 3) 1.3310 ( 4) 10.0000 VOLTAGE SOURCE CURRENTS NAME CURRENT VCC -1.081E-03 TOTAL POWER DISSIPATION 1.08E-02 WATTS ****************************************************************************** **** OPERATING POINT INFORMATION TEMPERATURE = 27.000 DEG C **** BIPOLAR JUNCTION TRANSISTORS NAME Q MODEL MOD1 IB 8.56E-06 IC 8.79E-04 VBE 6.00E-01 VBC -3.67E+00 VCE 4.28E+00 BETADC 1.03E+02 GM 3.40E-02 RPI 3.02E+03 RX 4.00E+02 RO 1.18E+05 CBE 0.00E+00 CBC 0.00E+00 CJS 0.00E+00 BETAAC 1.03E+02 CBX 0.00E+00 FT 5.41E+17 ****************************************************************************** JOB CONCLUDED TOTAL JOB TIME .03 ******************************************************************************

70

3.10 3.11

7 .MODEL IS VA RB rb BF 3.9 (1) (2) (3) VB, VC VE

3.2.3 (1) (base bias) 3.10 RB VCC IB

IB = B

BECC

RVV (3-21)

IC = 0IB (3-22)

VCE = VCC RCIC (3-23) (stable) (switching)

(2) (emitter bias)

3.11 IB VB 0

IE = E

BEEE

RVV (3-24)

IC = 0IE (3-25)

RB

Q

RC

+VCC

IB

IE

IC

VCE VBE

Q

RB

RC

RE

+VCC

IB

IE

IC

VCE VBE

VB

VEE

71

3.12 3.13

VCE = VCC + VEE (RE + 0RC)IE (3-26) 2

(3) (collector-feedback bias)

RC RB VCB 3.12 VCC = RC(IB + IC) + RBIB + VBE = (1 + 0)RCIB + RBIB + VBE IB =

C0B

BECC

)1( RRVV++

(3-27)

VCE = VCC RC(IB + IC) = VCC RCIE (3-28) VCB = RBIB =

C0B

BECCB

)1()(

RRVVR++ (3-29)

VCB VRC RB = (1 + 0)RC RB VCB

(4) (emitter-feedback bias)

(1) 3.10 RE 3.13 VCC = RBIB + VBE + REIE

IB

RB

Q

RC

+VCC

IE

IC

VCE

VCB

VRC

VBE

IB

RB

Q

RC

+VCC

IE

IC

VCE

RE

VBE

72

= RBIB + VBE + (1 + 0)REIB IB =

E0B

BECC

)1( RRVV++

(3-30)

IC = 0IB (3-31) VCE VCC (RC + RE)IC (3-32)

3.2.4 (bias stability) 3.2.1 (sensitivity) (shift) VBE 2.2 [mV/C] ICO 0.1~ 10 [nA] 2 10C VBE ICO

(stability index) ICO VBE

SI = CO

C

II

(3-33)

SV = BE

C

VV

(3-34)

(3-33)(3-34) IC VC ICO VBE

3.8 ICO (3-13)(3-14)

73

3.14

IC = 0IE + ICO (3-35) IB = (1 0)IE ICO (3-36) VBB

VBB = RBIB + VBE + REIE (3-37)

(3-36)(3-37) IE

IE = B0E

COBBEBB

)1( RRIRVV

++ (3-38)

(3-38)(3-35)

IC = B0E

COBEBEBB0

)1()()(

RRIRRVV

+++ (3-39)

VC (3-39)(3-18)

VC = VCC RCB0E

COBEBEBB0

)1()()(

RRIRRVV

+++ (3-40)

(3-33),(3-34) (3-39),(3-40)

SI = B0E

BE

)1( RRRR+

+ E

BE

RRR + =

E

B1RR+ (3-41)

SV = B0E

C0

)1( RRR

+ E

C

RR (3-42)

SI SV (3-41)(3-42) ICO VBE IC VC ()

R1

Q

R2

RC

RE

+VCC

IB

IE

IC VRC

VCE

VRE

74

3.15

() RE 3.14 RE VRE VRC, VCE VRE

VRC : VCE : VRE = 1 : 1 : 0.1 ~ 0.5 (3-43) SI SV 5 ~ 20

3.2.5 ICO VBE (integrated circuit, IC) ICO ICO VBE

3.15 Q2 R2 Q2 Q1 Q2 VBE1 = VBE2 = VBE

VB = BEBECC21

2 )( VVVRR

R ++ (3-44)

IE = E

BEB

RVV

Q1

RE

IE

IC

RC R1

+VCC

VBE1

VE VBE2

R2

VC Q2

VB

75

=

++ BEBEBECC21

2

E)(1 VVVV

RRR

R

= )()( BECC21E

2 VVRRR

R + (3-45)

IC = 0IE = )()( BECC21E20 VVRRR

R + (3-46)

VC = VCC RCIC = VCC )()( BECC21E

2C0 VVRRR

RR + (3-47)

(3-34) SV (3-47)

BE

C

VV

=

)( 21E2C0

RRRRR+

21

2

E

C

RRR

RR

+ (3-48)

(3-48) (3-42) SV R2/(R1 + R2) VC

(zenor diode)

3.3 3.3.1 3.2.2 3.6()

() ICO = 0

() 0 = 1.0 ()

VBE B ICO 0.1 ~ 10 [nA] IC ICO = 0 0 0.99 ~ 0.997

76

() ()

3.16

() ()

3.17

1.0 VBE 3.16() 0 = 1.0 IC = 0IE = IE (3-49) IB = IE IC = 0 (3-50) VBB = rbIB = 0 (3-51) VBE = rbIB + VBE = VBE (3-52) VBE 0.6 ~ 0.7 [V]

3.16()(3-50),(3-51) B-B B-B (nullator) 3.17() C-B IC IE VCB IC VCB VCB C-B (norator)

C

IE

IC

IB 0IE

rb B

VBE

VCB

VBB

E

B

VBE

Q IB

IE

IC

B

C

E

I

V

V = I = 0

I

V

V I

77

() npn () pnp

3.18

3.17()

3.18 () npn () pnp (nullor model)

3.3.2 3.19() VB, VE, IE VC 3.19()

VB = CC21

2 VRR

R+ (3-53)

VE = VB VBE (3-54)

IE = E

E

RV = IC (3-55)

VC = VCC RCIC (3-56) 3.2.2 (3-53)~(3-56) 3.2.2

3.3 3.2

B VBE

B

C

E

B B

VBE

C

E

78

() ()

3.19

(3-53)~(3-56)

VB = 10k10k40k10 + = 2 [V]

VE = 2 0.6 = 1.4 [V]

IE = IC = k5.14.1 = 0.933 [mA]

VC = 10 5k0.933mA = 5.34 [V] 3.2 IC IC IC 3.2 6.4% VC VC VC 3.2 5%

3.4 FET FET 2 FET FET

3.4.1 JFET MOSFET 2 JFET MOSFET n-n-n n p-p-p p JFET MOSFET JFET n MOSFET

R1

Q

R2

RC

RE

+VCC

IE

IC

VC

B

C

E

VE VB

R1

R2

RC

RE

+VCC

IE

IC

VC

B

C

E

VE VB

B VBE

79

3.20 3.21

2 VP JFET n VGS 0 VP 0 > VGS > VP VGS ID VGS

ID = 2

P

GSDSS 1

VVI (3-57)

3.20 FET 2 VGS VDD

VDS = VDD RDID (3-58) VDS = VDD/2 (3-58)

RDID = 2DDV (3-59)

RD = D

DD

2IV (3-60)

(3-57) VGS

VGS = PDSS

D1 VII

(3-61)

RG RG RG RG RG 1 [M]

G

D

S

ID RD

VDD

VGS

RG VDS

G

D

S

VDS

ID RD

VDD

RSRG

VGSVRS

80

3.4 3.20 JFET IDSS = 5 [mA] VP = 3.8 [V] VDD = 10 [V] ID = 1 [mA] RD VGS VDS = VDD/2 = 5 [V] (3-58)

RD = D

DSDD

IVV =

mA1510 = 5 [k]

(3-61) VGS

VGS = )8.3(mA5mA11

= 2.10 [V]

JFET JFET

VDS > VSAT = VGS VP (3-62) 3.4 VDS = 5 [V] VSAT = 1.7 [V] VDS > VSAT JFET 3.20

2 3.21 JFET VDD RS VRS

VGS = VRS = RSID (3-63) VDS

VDS = VDD (RD + RS)ID (3-64) ID (3-61) VGS (3-63)

RS = D

GS

IV (3-65)

3.5 3.21 IDSS VP JFET 5 [mA] 3.8 [V] VDD = 10 [V] ID = 1 [mA] VGS, RS, VDS RD

JFET JFET 3.4 10 [V]

81

3.22 3.23

1 [mA] VGS 3.4 2.10 [V] (3-63) RS

RS = D

GS

IV =

mA1)10.2( = 2.10 [k]

VDS = 2RSDD VV =

210.210 = 3.95 [V]

(3-64)

RD = D

RSDSDD

IVVV =

mA110.295.310 = 3.95 [k]

3.4.2 MOSFET 3.22 MOSFET n R1 R2 VDD 2 R2 VGS 2 VT VGS>VT ID VGS

ID = Kn(VGS VT)2 (3-66) ID VGS

VGS = Tn

D VKI + (3-67)

VGS = DD21

2 VRR

R+ (3-68)

VDS = VDD RDID (3-69)

R1

M

R2

RD

+VDD

ID

VDS

G

D

S

VGS

R1

M

R2

RD

+VDD

ID

VDS G

D

S VGS

RSVG

82

3.5 3.22 MOSFET Kn = 0.51 [mA/V2] VT = 1 [V] VDD = 6 [V] R1 = 30 [k], R2 = 20 [k] VGS ID VDS = VDD/2 RD (3-68)(3-66)

VGS = 6k20k30k20 + = 2.4 [V]

ID