Cost-Effective Fully Tested Die with High-Frequency and ... · High-Frequency and High-Throughput Wafer-Test Solution Masahide Ozawa Elpida Memory, Inc. ... Project Members

2004年6月29日Southwest Test Workshop 2004

Cost-Effective Fully Tested Die with High-Frequency and High-Throughput

Wafer-Test Solution

Masahide Ozawa Elpida Memory, Inc. Nobuhiro Kawamata FormFactor Inc., Asia

Southwest Test Workshop 2004

p. 2

Southwest Test Workshop 20042004年6月29日 Elpida / FFI

Presentation Outline• Mobile RAM introduction• Mobile RAM wafer-level-final-sort tests objectives

and goals• High performance probing technology solution• New probing technology internal qualification • Customer qualification• Follow on work • Summary and conclusion

p. 3


Elpida DRAM Plant

300mm Fabrication in Japan

p. 4


Lowest IDD6, Low Voltage (1.8V), and JEDEC Mobile Functions

* Low Power ModePASR: Partial Array Self RefreshTCSR: Temperature Compensated Self Refresh

Function

Synchronous Synchronous

Read / WriteRead / Write

SDRAM Mobile RAM

I/O Driver Control

Control Self Refresh by Temperature

Control min memory size For refresh

Synchronous

Read / Write

Low PowerSDRAM

Self RefreshCurrent

3.3VStandard

2.9V, 3.3VLow Power

1.8VLow Power

Driver Strength

TCSR*

PASR*

Deep PowerDown

ex) 128Mb Density

Additional

Mobile Functions

Regular SDRAM based Low Power

2.0mA 0.6mA 0.25mA

Mobile RAM Introduction

p. 5


Required Density in Cellular Phone

Base Band AVG

Application AVG

(Mbit/unit)

(Source : Elpida)0

100

200

300

400

500

600

1H 2H 1H 2H 1H 2H 1H 2H

2003 2004 2005 2006

Application memory is higher than Baseband memory.

p. 6


Bandwidth (Speed) for Cellular Phone

(Source : Elpida)

MB/sec

(MByte/sec)

0

200

400

600

800

1H 2H 1H 2H 1H 2H 1H 2H

2003 2004 2005 2006

DDR x16 I/O

DDR X32 I/O

SDR x16 I/O

Due to advanced application, required bandwith is rapidly growing.

p. 7


Japanese 3G Market Penetration Plan and SIP demand projection

0

500

1000

1500

2000

2500

3000

April

May

June Ju

ly

Aug Sep Oct

Nov Dec Jan

Feb Mar

Japanese 3G Users

Japanese 3G with SIP

Year 2003 Year 2004

(K Users)

MCP Demand Increase due to Space limitation

Real TimeOS

File Size Increasing

HTML Mail Receiving

SIP is re

ally l

aunch

ingActual

(Source： Elpida)

p. 8


Mobile Memory TAM Trend

SDRAM

PSRAM

SRAM

1G SD

512M SD

256M SD

128M SD

64M SD

32M SD

Mobile SDRAM TAM

Memory TAM for Mobile Phone

2003 2004 2005 2006 2007

2003 2004 2005 2006 2007

p. 9


Advanced Mobile RAM KGD Flow• Conventional Wafer Sale Flow

• Elpida Mobile RAM Wafer Sale Flow (Under Evaluation)

Wafer Level BI TestHigh Speed and High Throughput Wafer Level Final TestsHigh, Ambient, Cold Test Temperature Tests

Prelaser Tests Redunduncy Post Laser Test

CP-1 CP-1Mid Speed Mid SpeedHigh Temp Ambient

L/RCP-2

Mid SpeedHigh Temp

TestedWafer Sale

Prelaser Tests Redunduncy

Wafer BI CP-1 CP-1 CP-2 CP-2Low Speed Mid Speed Mid Speed High Speed High Speed

128// 128// 128// 128// 128//BI Temp High Temp Ambient High Temp Low Temp

Mobile RAMWafer SaleL/R

Wafer Level Final Tests

Due to Due to Probe Card Probe Card LimitationLimitation

p. 10


High Performance Probing Solution

Wafer-Level Final-Sort-at-Probe Objectives

• On-spec Mobile RAM testing– Low-voltage– High-frequency– Wide temperature

• Low TCOO

High performance probing solution enables “Value-Added Mobile RAM Wafer-Sale Business”

p. 11


High Performance Probing Solution

TRETM probing technology HFTAPTM probing technologyFFI S200TM probing technology

128 Multi DUT testing, 66MHz 500MHz, High signal integrity

200MHz High signal integrity 128 Multi DUT

p. 12


2 4 6 8 10 12 14 16 180 20

0

1

2

-1

3

time, ns ec

S20

0_V

out_

with

_xta

lk_p

hase

180

Sta

ndar

d_V

out_

with

_xta

lk_p

hase

18

FFI Internal QualificationSignal Integrity: Cross-talk simulation*

S200 probing technologyFFI TRE probing technology

3V

0V

(V)

Time (ns)

*180°out-of-phase cross-talk effects super-imposed

p. 13


m6freq=200.0MHzFar_end_Cross_Talk=-27.557

50 100 150 200 250 300 350 400 4500 500

-50

-40

-30

-20

-10

-60

0

freq, MHz

Far_

end_

Cro

ss_T

alk

m6

Far_

end_

Cro

ss_T

alk1

m4freq=200.0MHzNear_end_Cross_Talk=-29.501

50 100 150 200 250 300 350 400 4500 500

-50

-40

-30

-20

-10

-60

0

freq, MHz

Nea

r_en

d_C

ross

_Tal

k

m4

Nea

r_en

d_C

ross

_Tal

k2

Far End Cross-talk Near End Cross-talk(dB) (dB)

FFI Internal Qualification Signal Integrity: cross-talk simulation

%2.31032.0log2030 , %10

11.0log2020

21log20)(

1010

10

∴

=−∴

=−

=

dBdB

VVdBNEXT volts in Power Reference :V2

volts in Power Measured:V1

FFI TRES200

FFI TRES200

p. 14


FFI Internal Qualification Signal Integrity: Tr/Tf Measurement

54 5652 58

0.2

0.3

0.1

0.4

time, nsec

U43

_A04

_V..C

HA

NN

EL2

m1

m2

$C_U

43_A

04_V

..CH

AN

NEL

2

m3

m4

t m1-m2 = 0.35nst m3-m4 = 0.45nsS200 Probing TechnologyFFI TRE Probing Technology

(V)

Time (ns)

S200 probing technology

FFI TRE probing technology

p. 15


S200 Internal Qualification Results

S200 Results-1 dB Bandwidth 225MHz

-3 dB Bandwidth 850MHz

Rise/Fall Time 20%-80% Tr/Tfl 350 pSSkew Channel to Channel +/- 70 pS

Temperature Operation Range -40 to 125℃Driver Sharing Level x2// per Station 128//

Internal Qualification

Attenuation

Parallelism

p. 16


• 143MHz tester + 100MHz Mobile RAM– Output pin waveform – DQ signal skew – Input and output voltage margins– Vcc margin– Timing margin – Wafer-to-wafer high-speed binning correlation

Wafer-Level Final-Sort Test Customer Qualification

p. 17


0

5

10

15

20

25

30

0 25 50 75 100 125 150 175 200 225DUT to DUT Signal Skew [ps]

Freq

uenc

y S200

TRE

Customer qualification: DUT to DUT Skew

S200 Probing Technology

FFI TRE Probing Technology

p. 18


Customer qualification: VIH/VIL Margin Shmoo

0

1.8

2.5

Vcc(V)

1.0 1.2 1.4 1.6 1.8 VIH(V) 0 0.2 0.4 0.6 0.8 VIL(V)


FFI TRE Probing Technology


p. 19


Customer qualification: tHOLD-Control / tHOLD-Address Margin Shmoo

0

1.8

2.5

Vcc(V)

0 100 200 300 400 (ps) 100 200 400 600 800 (ps)tHOLD-Control tHOLD-Address

S200 Probing Technology S200 Probing Technology

FFI TRE Probing TechnologyFFI TRE Probing Technology

p. 20


0

2000

0 4

Time (ns)

VO

H (m

V)

S200FFI TRE

S200 Probing Technology: 0.6ns

TRE Probing Technology: 1.6ns

90%

10%

Customer Qualification: DQ SMHOO Plot

p. 21


Summary and Conclusion

Low-to-high temperature testing throughout the test process

Wide temperature

To be applied to133MHz Mobile RAM at device speed testing

On-spec testing

1.1x throughput

compared with low-frequency testing

1.5x throughput

compared with non-TRE probing

128 parallel per stationLow TCOO

100MHz beta evaluationHigh-frequency testing

ResultsObjectives

p. 22


Follow-on Work• Elpida Memory Inc.

– 100MHz Mobile RAM production using S200 – Evaluation of 133MHz Mobile RAM at-device-speed testing

with S200

• FormFactor, Inc.– Customer qualification for 133MHz and beyond– Beta site evaluation of multi-bit FLASH memory 100MHz

and beyond

p. 23


• Elpida– Masahide Ozawa– Yozo Saiki– Koji Mine– Katsuji Hoshi– Yosuke Kawamata– Hajime Sasamoto– Satoshi Gomi– Tomoharu Yamaguchi

• FormFactor– Norishige Kawashimo– Mark Brandemuhel– Chuck Miller – Jim Tseng– Ken Matsubayashi– Nobuhiro Kawamata

Project Members

The names of the companies and products described in this document are the trademarks or registered trademarks of each company.

Documents

Cost-Effective Fully Tested Die with High-Frequency and ... · High-Frequency and High-Throughput Wafer-Test Solution Masahide Ozawa Elpida Memory, Inc. ... Project Members