IGBT 器件技术发展近况与展望

  • Upload
    virote

  • View
    275

  • Download
    11

Embed Size (px)

DESCRIPTION

IGBT 器件技术发展近况与展望. 沈征 湖南大学超大功率半导体中心 [email protected] 2012 年 10 月 27 日. 提纲. 功率半导体的应用与市场 IGBT 器件技术的发展历程 IGBT 电导调制效应的不断改善 高压特大容量 IGBT 的发展动态 IGBT 器件技术的未来展望 结束语. 硅材料极限. 功率半导体的应用与市场. 100M. 10M. 1M. 晶闸管. 功率水平 [VA]. 宽禁带半导体. 100k. IGBT. BJT. 10k. 1k. MOSFET. 100. 功率集成电路. 1k. 1M. - PowerPoint PPT Presentation

Citation preview

  • IGBT

    [email protected]

    20121027

    2012

    2012

  • IGBTIGBTIGBTIGBT

    *

    2012

  • * [Hz]100M10M1M100k10k1k1001001k10k100k1M [VA]BJT10MMOSFET100MIGBT

    2012

  • *MOSFETIGBT 2010141(YanoIMS20102008 (iSupply

    2012

  • *

    2012

    2012

  • *

    2012

  • IGBTIGBTIGBTIGBT

    *

    2012

  • IGBT

    *1980199020002010GERCAPT-IGBTLatch-UpPT-IGBTNPT-IGBTIGBTIEGTIGBTIGBTField-StopIGBTCS-IGBTIGBTIGBTIGBTIGBTIGBTMCT

    2012

  • IGBT

    *IGBTIGBT

    2012

  • IGBT

    *Shen & Omura, Proceedings of the IEEE, April 2007

    2012

  • (Field Stop)

    *Shen & Omura, Proceedings of the IEEE, April 2007

    2012

  • 1200V

    *1995300 m2008100 m1999185 m2001128 mJ. Vobecky, ISPSd2008

    2012

  • IGBT

    *RDS(ON)=/RDS(ON) (m-cm2)EOFF ~ 0.1mJ/A , Vcc= 600V1200V IGBT @125oC

    2012

    Chart1

    19801980198019801980198019801980

    6550198519851985198519851985

    198919891989751989198919891989

    1990199042199019907519901990

    199519953619951995199519951995

    19961996199630.71996199619961996

    199719971997199750199719971997

    199822199819981998199819981998

    2000200013.6200020002000200019.7

    20032003200320032003200333.82003

    20052005200520052005200520052005

    20062006200620062006200626.32006

    200720072007200720072007200715.4

    2008200811.320082008200820082008

    20102010201020102010201020102010

    20152015201520152015201520152015

    GE

    InfineonSiemens

    ONSEMI (Motorola)

    STMicroelectronics

    Fairchild (Samsung)

    Sheet1

    Column1GEInfineonSiemensONSEMI (Motorola)STMicroelectronicsFairchild (Samsung)

    1980

    19856550

    198975

    19904275

    199536

    199630.7

    199750

    199822

    200013.619.7

    200333.8

    2005

    200626.3

    200715.4

    200811.3

    2010

    2015

    To resize chart data range, drag lower right corner of range.

  • IGBT

    *

    2012

  • IGBTIGBTIGBTIGBT

    *

    2012

  • IGBT

    *N-N+P+N-PiNP+N-P+IGBTIGBT

    2012

  • IGBTIGBTIGBTIGBT

    *

    2012

  • IGBT3300/4500/6500500-5000GTOIGCT

    * 2012

    2012

  • IGBTHNPCIGBT

    *

    2012

  • IGBT

    *

    SPEED2012ABB

    2012

  • IGBT

    * [Hz]100M10M1M100k10k1k1001001k10k100k1M [VA]BJT10MMOSFET100MIGBTIGBT

    2012

  • IGBTIGBT
  • IGBT

    *201154IGBT

    2012

  • IGBT

    *

    2012

  • IGBTIGBTIGBTIGBT

    *

    2012

  • IGBTIGBTIGBTIGBTIGBTIGBTIGBT

    *

    2012

  • IGBT

    *A. Nakagawa 2006

    2012

  • IGBT

    *M. Sumitomo, 2012

    2012

  • IGBT

    *K. Oh et al 20061200V IGBT

    2012

  • IGBT

    *N-P+

    2012

  • IGBTIGBTIGBT

    *

    SPEED2012

    2012

  • IGBT15000V24 m-cm2 4H-SiC P-IGBT12500V5.3 m-cm2 4H-SiC N-IGBT

    *

    SPEED2012Cree 2012

    2012

  • IGBT1+1>2)//

    *

    2012

  • 150250

    *

    2012

    *