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IGBT 器件技术发展近况与展望. 沈征 湖南大学超大功率半导体中心 [email protected] 2012 年 10 月 27 日. 提纲. 功率半导体的应用与市场 IGBT 器件技术的发展历程 IGBT 电导调制效应的不断改善 高压特大容量 IGBT 的发展动态 IGBT 器件技术的未来展望 结束语. 硅材料极限. 功率半导体的应用与市场. 100M. 10M. 1M. 晶闸管. 功率水平 [VA]. 宽禁带半导体. 100k. IGBT. BJT. 10k. 1k. MOSFET. 100. 功率集成电路. 1k. 1M. - PowerPoint PPT Presentation
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IGBT
20121027
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IGBTIGBTIGBTIGBT
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* [Hz]100M10M1M100k10k1k1001001k10k100k1M [VA]BJT10MMOSFET100MIGBT
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*MOSFETIGBT 2010141(YanoIMS20102008 (iSupply
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*Shen & Omura, Proceedings of the IEEE, April 2007
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(Field Stop)
*Shen & Omura, Proceedings of the IEEE, April 2007
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1200V
*1995300 m2008100 m1999185 m2001128 mJ. Vobecky, ISPSd2008
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IGBT
*RDS(ON)=/RDS(ON) (m-cm2)EOFF ~ 0.1mJ/A , Vcc= 600V1200V IGBT @125oC
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6550198519851985198519851985
198919891989751989198919891989
1990199042199019907519901990
199519953619951995199519951995
19961996199630.71996199619961996
199719971997199750199719971997
199822199819981998199819981998
2000200013.6200020002000200019.7
20032003200320032003200333.82003
20052005200520052005200520052005
20062006200620062006200626.32006
200720072007200720072007200715.4
2008200811.320082008200820082008
20102010201020102010201020102010
20152015201520152015201520152015
GE
InfineonSiemens
ONSEMI (Motorola)
STMicroelectronics
Fairchild (Samsung)
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Column1GEInfineonSiemensONSEMI (Motorola)STMicroelectronicsFairchild (Samsung)
1980
19856550
198975
19904275
199536
199630.7
199750
199822
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200333.8
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200626.3
200715.4
200811.3
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IGBT
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*M. Sumitomo, 2012
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*K. Oh et al 20061200V IGBT
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