IRFP260NHEXFET® Power MOSFET

10/11/00

Parameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 AIDM Pulsed Drain Current � 200PD @TC = 25°C Power Dissipation 300 W

Linear Derating Factor 2.0 W/°CVGS Gate-to-Source Voltage ±20 VEAS Single Pulse Avalanche Energy� 560 mJIAR Avalanche Current� 50 AEAR Repetitive Avalanche Energy� 30 mJdv/dt Peak Diode Recovery dv/dt � 10 V/nsTJ Operating Junction and -55 to +175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 0.50RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/WRθJA Junction-to-Ambient ––– 40

Thermal Resistance

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Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut superior to the earlier TO-218 package because of its isolated mounting hole.

Description

VDSS = 200V

RDS(on) = 0.04Ω

ID = 50AS

D

G

� Advanced Process Technology� Dynamic dv/dt Rating� 175°C Operating Temperature� Fast Switching� Fully Avalanche Rated� Ease of Paralleling� Simple Drive Requirements

TO-247AC

PD - 94004A

IRFP260N

2 www.irf.com

S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing theISM Pulsed Source Current integral reverse

(Body Diode)� ––– ––– p-n junction diode.VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V �trr Reverse Recovery Time ––– 268 402 ns TJ = 25°C, IF = 28AQrr Reverse Recovery Charge ––– 1.9 2.8 μC di/dt = 100A/μs �ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

50

200A

� Starting TJ = 25°C, L = 1.5mH RG = 25Ω, IAS = 28A.

� Repetitive rating; pulse width limited by max. junction temperature.

Notes:� ISD ≤ 28A, di/dt ≤ 486A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C� Pulse width ≤ 400μs; duty cycle ≤ 2%.

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250μAΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mARDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.04 Ω VGS = 10V, ID = 28A��VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250μAgfs Forward Transconductance 27 ––– ––– S VDS = 50V, ID = 28A �

––– ––– 25 μA VDS = 200V, VGS = 0V––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20VGate-to-Source Reverse Leakage ––– ––– -100

nAVGS = -20V

Qg Total Gate Charge ––– ––– 234 ID = 28AQgs Gate-to-Source Charge ––– ––– 38 nC VDS = 160VQgd Gate-to-Drain ("Miller") Charge ––– ––– 110 VGS = 10V �td(on) Turn-On Delay Time ––– 17 ––– VDD = 100Vtr Rise Time ––– 60 ––– ID = 28Atd(off) Turn-Off Delay Time ––– 55 ––– RG = 1.8Ωtf Fall Time ––– 48 ––– VGS = 10V��

Between lead,––– –––

6mm (0.25in.)from packageand center of die contact

Ciss Input Capacitance ––– 4057 ––– VGS = 0VCoss Output Capacitance ––– 603 ––– pF VDS = 25VCrss Reverse Transfer Capacitance ––– 161 ––– ƒ = 1.0MHz

nH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance ––– –––S

D

G

IGSS

ns

5.0

13

IDSS Drain-to-Source Leakage Current

IRFP260N

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0.1

1

10

100

1000

0.1 1 10 100

�

20μs PULSE WIDTHT = 25 CJ °

�

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I ,

Dra

in-to

-Sou

rce

Cur

rent

(A)

DS

D

4.5V

0.1

1

10

100

1000

0.1 1 10 100

�

20μs PULSE WIDTHT = 175 CJ °

�

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)I

, D

rain

-to-S

ourc

e C

urre

nt (A

)

DS

D

4.5V

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

�

V = 50V20μs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I ,

Dra

in-to

-Sou

rce

Cur

rent

(A)

GS

D

�

T = 175 CJ °

�

T = 25 CJ °

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Junction Temperature( C)

R

, D

rain

-to-S

ourc

e O

n R

esis

tanc

e(N

orm

aliz

ed)

J

DS

(on)

°

�

�

V =

I =

GS

D

10V

50A

Fig 4. Normalized On-ResistanceVs. Temperature

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Fig 7. Typical Source-Drain DiodeForward Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

1

10

100

1000

1 10 100 1000

�

OPERATION IN THIS AREA LIMITEDBY RDS(on)

� Single Pulse T T

= 175 C= 25 C°

°JC

V , Drain-to-Source Voltage (V)

I ,

Dra

in C

urre

nt (A

)I

, D

rain

Cur

rent

(A)

DS

D

�10us

�100us

�1ms

�10ms

Fig 7. Typical Source-Drain DiodeForward Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0

1000

2000

3000

4000

5000

6000

7000

8000

C, C

apac

itanc

e(pF

)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = CgdCoss = Cds+ Cgd

0 50 100 150 2000

4

8

12

16

Q , Total Gate Charge (nC)

V

, G

ate-

to-S

ourc

e V

olta

ge (V

)

G

GS

�

I =D 28A

�V = 40VDSV = 100VDSV = 160VDS

0.1

1

10

100

1000

0.2 0.6 1.0 1.4 1.8 2.2V ,Source-to-Drain Voltage (V)

I

, Rev

erse

Dra

in C

urre

nt (A

)

SD

SD

�

V = 0 V GS

�

T = 25 CJ °

�

T = 175 CJ °

IRFP260N

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RD

Fig 9. Maximum Drain Current Vs.Case Temperature

Fig 10a. Switching Time Test Circuit

VDS90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Pulse Width ≤ 1 μsDuty Factor ≤ 0.1 %

VGS

RG

D.U.T.

10V

+-

25 50 75 100 125 150 1750

10

20

30

40

50

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (A

)

°C

D

Fig 9. Maximum Drain Current Vs.Case Temperature

Fig 10a. Switching Time Test Circuit

VDS90%

10%VGS

td(on) tr td(off) tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Pulse Width ≤ 1 μsDuty Factor ≤ 0.1 %

VGS

RG

D.U.T.

10V

VDD

25 50 75 100 125 150 1750

10

20

30

40

50

T , Case Temperature ( C)

I ,

Dra

in C

urre

nt (A

)

°C

D

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

�

Notes:1. Duty factor D = t / t2. Peak T =P x Z + T

1 2J DM thJC C

�

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Ther

mal

Res

pons

e(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

�

SINGLE PULSE(THERMAL RESPONSE)

IRFP260N

6 www.irf.com

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3μF

50KΩ

.2μF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+-

10 V

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (B R )D S S

IA S

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

R G

IA S

0 .01Ωtp

D .U .T

LV D S

+- VD D

D R IV E R

A

15V

20V

25 50 75 100 125 150 1750

500

1000

1500

Starting T , Junction Temperature ( C)

E

, S

ingl

e P

ulse

Ava

lanc

he E

nerg

y (m

J)

J

AS

°

�

IDTOP

BOTTOM

11A20A28A

IRFP260N

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P.W.Period

di/dt

Diode Recoverydv/dt

Ripple ≤ 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

Fig 14. For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

�

��

RGVDD

• dv/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by Duty Factor "D"• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations • Low Stray Inductance

• Ground Plane • Low Leakage Inductance

Current Transformer

�

*

IRFP260N

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Part Marking InformationTO-247AC

Package OutlineTO-247AC OutlineDimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 10/00

IN TE R N ATIO N AL R ECTIF IE R LOG O

A S S E M B LY L OT COD E

E XAM P LE : TH IS IS A N IR F PE 30 W ITH A S S E M B LY L O T C O D E 3 A1 Q

P A R T N U M B ER

D A TE C O D E(YYW W )YY = YE A RW W W EE K

3A 1 Q 9 302

IR FP E 30

A

LE A D A S S IG N M E N TS

NO TE S :

- D -5 .30 (.209 )4 .70 (.185 )

2 .50 (.089)1 .50 (.059)

4

3X0 .80 (.031)0 .40 (.016)

2.60 (.102)2.20 (.087)3 .40 (.133 )

3 .00 (.118 )

3X

0 .25 (.010 ) M C A S

4.30 (.170 )3 .70 (.145 )

- C -

2X 5.50 (.217)4.50 (.177)

5 .50 (.217)

0.25 (.010)

1 .40 (.056 )1 .00 (.039 )

3.65 (.143 )3.55 (.140 )

DM MB- A -

15.90 (.626)15.30 (.602)

- B -

1 2 3

20 .30 (.800)19 .70 (.775)

14.80 (.583 )14.20 (.559 )

2 .40 (.094)2 .00 (.079)

2X

2X5.45 (.215)

1 D IM E N S IO NING & TO LE R A N CING P E R A N S I Y 14.5M , 1982.2 CO N TR O LLIN G D IM E N S IO N : IN CH .3 CO N F O RM S TO JE D E C O U TLINE TO -247-A C .

1 - G A TE2 - DR A IN3 - S O UR C E4 - DR A IN