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Phase Control Thyristors VRRM
= 800-1200 V
IT(RMS)
= 25 AIT(AV)M
= 16 A
VRSM
VRRM
TypeV
DSMV
DRM
V V
900 800 CS 8-08io21300 1200 CS 8-12io2
Symbol Test Conditions Maximum Ratings
IT(RMS)
TVJ
= TVJM
25 AIT(AV)M
Tcase
= 85C; 180 sine 16 A
ITSM
TVJ
= 45C; t = 10 ms (50 Hz), sine 250 AV
R = 0 t = 8.3 ms (60 Hz), sine 270 A
TVJ
= TVJM
t = 10 ms (50 Hz), sine 200 AV
R = 0 t = 8.3 ms (60 Hz), sine 220 A
I2t TVJ
= 45C t = 10 ms (50 Hz), sine 310 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 306 A2sT
VJ = T
VJMt = 10 ms (50 Hz), sine 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 200 A2s
(di/dt)cr
TVJ
= TVJM
repetitive, IT = 48 A 150 A/ s
f = 50 Hz, tP =200 s
VD = 2/3 V
DRM
IG = 0.2 A non repetitive, I
T = I
T(AV)M500 A/ s
diG /dt = 0.2 A/ s
(dv/dt)cr
TVJ
= TVJM
; VDR
= 2/3 VDRM
1000 V/ sR
GK = ; method 1 (linear voltage rise)
PGM
TVJ
= TVJM
tP = 30 s 10 W
IT = IT(AV)M tP = 300 s 5 WP
G(AV)0.5 W
VRGM
10 V
TVJ
-40...+125 CT
VJM125 C
Tstg
-40...+125 C
Md
Mounting torque 2.5 Nm22 lb.in.
Weight 6 g
Features Thyristor for line frequencies International standard package
JEDEC TO-64 Planar glassivated chip Long-term stability of blocking
currents and voltages
Applications Motor control Power converter AC power controller
Advantages Space and weight savings Simple mounting Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747IXYS reserves the right to change limits, test conditions and dimensions
CS 8
1 2
3
1 = Anode, 2 = Cathode, 3 = Gate
TO-64 2
3
M51
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CS 8
0.0 0.5 1.0 1.5 2.00
10
20
30
40
50
10-2 10-1 100 101
10-1
100
101
102
0 25 50 750
1
2
3
4
ITtgdV
G
V
IG
t VT
A s
mA A V
Symbol Test Conditions Characteristic Values
IR, I
DT
VJ= T
VJM; V
R = V
RRM; V
D = V
DRM 3 mA
VT
IT
= 33 A; TVJ
= 25C 1.6 V
VT0
For power-loss calculations only (TVJ
= 125C) 1.0 V
rT 18 m
VGT
VD = 6 V; T
VJ = 25C 2.5 V
TVJ
= -40C 3.5 VIGT
VD = 6 V; T
VJ = 25C 30 mA
TVJ
= -40C 50 mA
VGD
TVJ
= TVJM
; VD = 2/3 V
DRM 0.2 V
IGD
1 mA
IL
TVJ
= 25C; tP = 10 s 100 mA
IG = 0.09 A; di
G /dt = 0.09 A/ s
IH
TVJ
= 25C; VD = 6 V; R
GK = 80 mA
tgd
TVJ
= 25C; VD = 1/2 V
DRM 2 s
IG = 0.09 A; diG /dt = 0.09 A/ s
tq
TVJ
= TVJM
; IT = 16 A, t
P = 300 s; di/dt = -20 A/ s typ. 60 s
VR = 100 V; dv/dt = 20 V/ s; V
D = 2/3 V
DRM
RthJC
DC current 1.5 K/WR
thJHDC current 2.5 K/W
dS
Creepage distance on surface 1.55 mmd
AStrike distance through air 1.55 mm
a Max. acceleration, 50 Hz 50 m/s2
Accessories:Nut M5 DIN 439/SW8Lock washer A5 DIN 128
Fig. 1 Gate voltage and gate currentTriggering:A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time tgd
Fig. 3 On-state characteristics
B
B C
B
lim.
typ.
typ. lim.
TVJ
= 125°CT
VJ= 25°C
IGD
: TVJ
= 25°CIGD
: TVJ
=125°C
A
I G T : T
V J = 2 5 ° C
I G T : T
V J = 0 ° C
I G T : T
V J =
- 4 0 ° C
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0 50 100 1500
5
10
15
20
2 3 4 5 6 7 8 91 10
200
400
600
800
100
1000
10-3 10-2 10-1 100 101
0
50
100
150
200
250
300
0 5 10 15 20 25 300
10
20
30
40
50 100 1500
10-3 10-2 10-1 100 101 102 103
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT(AV)M
I2tITSM
A
t t Tc
PT
W
IT(AV)M
ATamb
t
s
ZthJH
K/W
AA2s
s
°C
ms °C
CS 8
Fig. 7 Power dissipation versus on-state current and ambient temperature
Fig. 4 Surge overload current
ITSM: crest value, t: duration
Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at
case temperature 180 sine
Fig. 8 Transient thermal impedance junction to heatsink
RthJH
for various conduction angles d:
d RthJH
(K/W)
DC 2.5180 2.79120 2.95
60 3.1730 3.32
Constants for ZthJH
calculation:
i Rthi
(K/W) ti (s)
1 0.252 0.0052 0.333 0.02253 0.5 0.1454 0.833 0.435 0.416 2.756 0.166 23
50Hz, 80%VRRM
TVJ = 45°CT
VJ= 125°C
VR
= 0 V
DC180°sin
120°60°30°
d = DC
d = 180°
d = 120°d = 60°
d = 30°
TVJ
= 45°C
TVJ
= 125°C
RthJA
:
2.8 K/W
3.2 K/W
3.6 K/W
3.6 K/W
5.2 K/W
7 K/W
ase
